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1. 发明授权

US08343827B2 Semiconductor device and manufacturing method of the same 有权
标题翻译：半导体器件及其制造方法相同
公开(公告)号：US08343827B2
公开(公告)日：2013-01-01
申请号：US13182750
申请日：2011-07-14
申请人： Tadashi Yamaguchi , Keiichiro Kashihara , Yoji Kawasaki
发明人： Tadashi Yamaguchi , Keiichiro Kashihara , Yoji Kawasaki
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823814 , H01L29/7848
摘要： In a CMIS device, to improve the operating characteristics of an n-channel electric field transistor that is formed by using a strained silicon technique, without degrading the operating characteristics of a p-channel field effect transistor. After forming a source/drain (an n-type extension region and an n-type diffusion region) of an nMIS and a source/drain (a p-type extension region and a p-type diffusion region) of a pMIS, the each source/drain having a desired concentration profile and resistance, a Si:C layer having a desired amount of strain is formed in the n-type diffusion region, and thus the optimum parasitic resistance and the optimum amount of strain in the Si:C layer are obtained in the source/drain of the nMIS. Moreover, by performing a heat treatment in forming the Si:C layer in a short time equal to or shorter than 1 millisecond, a change in the concentration profile of the respective p-type impurities of the already-formed p-type extension region and p-type diffusion region is suppressed.
摘要翻译：在CMIS器件中，为了改善通过使用应变硅技术形成的n沟道电场晶体管的工作特性，而不降低p沟道场效应晶体管的工作特性。在形成pISIS的nMIS和源极/漏极（p型延伸区域和p型扩散区域）的源极/漏极（n型延伸区域和n型扩散区域）之后，源极/漏极具有所需的浓度分布和电阻，在n型扩散区域中形成具有所需量的应变的Si：C层，因此Si：C层中的最佳寄生电阻和最佳应变量在nMIS的源/漏中获得。此外，通过在等于或短于1毫秒的短时间内形成Si：C层进行热处理，已经形成的p型延伸区域的各个p型杂质的浓度分布的变化和 p型扩散区被抑制。

2. 发明申请

US20120106127A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20120106127A1
公开(公告)日：2012-05-03
申请号：US13285686
申请日：2011-10-31
申请人： Yasushi HATTORI , Masaki TOHYAMA , Junichi KINOSHITA , Yoji KAWASAKI , Yuji TAKEDA , Misaki UENO
发明人： Yasushi HATTORI , Masaki TOHYAMA , Junichi KINOSHITA , Yoji KAWASAKI , Yuji TAKEDA , Misaki UENO
IPC分类号： F21V8/00 , F21V9/16
CPC分类号： G02B6/001 , F21K9/232 , F21K9/61 , F21K9/68 , F21V3/00 , F21V7/005 , F21V7/22 , F21V9/30 , F21W2131/103 , F21Y2115/10 , F21Y2115/30 , G02B6/005
摘要： A light emitting device includes a light source capable of emitting emission light, a first phosphor layer and an optical waveguide. A first phosphor layer has at least a first surface and a second surface on an opposite side of the first surface, extends in a light guiding direction, and is capable of absorbing the emission light and emitting first wavelength converted light having a longer wavelength than the emission light. The optical waveguide has a reflector. And the optical waveguide has an input surface of the emission light, a reflection surface being in contact with the first surface of the first phosphor layer and provided on a surface of the reflector, and an output surface spaced from the first phosphor layer. The reflection surface and the output surface extend in the light guiding direction.
摘要翻译：发光器件包括能够发射发射光的光源，第一荧光体层和光波导。第一荧光体层具有在第一表面的相对侧上的至少第一表面和第二表面，在导光方向上延伸，并且能够吸收发光并发射波长比第一波长长的波长的第一波长转换光发射光。光波导具有反射器。并且光波导具有发射光的输入表面，反射表面与第一荧光体层的第一表面接触并设置在反射器的表面上，以及与第一荧光体层间隔开的输出表面。反射面和输出面在导光方向上延伸。

3. 发明申请

US20100208490A1 HOLLOW TYPE PLANAR ILLUMINATNG DEVICE 有权
标题翻译：中空型平面照明装置
公开(公告)号：US20100208490A1
公开(公告)日：2010-08-19
申请号：US12682683
申请日：2008-10-07
申请人： Ryuji Tsuchiya , Yoji Kawasaki
发明人： Ryuji Tsuchiya , Yoji Kawasaki
IPC分类号： F21V7/00
CPC分类号： G02B6/0096 , F21V7/0091 , F21V7/22 , F21V13/04 , F21Y2115/10 , G02B6/003 , G02B6/0046 , G02B6/0051 , G02B6/0055
摘要： Provided is a hollow type planar illuminating device having uniform luminance distribution over the entire light emitting surface. A reflecting surface member (2) is arranged on the bottom side of a hollow unit case (1), a light emitting surface member (3) is arranged on the side facing the reflecting surface member of the unit case, and a space sandwiched between the reflecting surface member and the light emitting surface member of the unit case is permitted to be a hollow light guide space (10). An LED light source unit (5) wherein many LEDs are mounted in a row on a wiring board is arranged adjacent to the both sides or one side of the hollow light guide space so that light is emitted to the hollow light guide space. Between the LED light source unit and an end surface of the hollow light guide space, a light collecting lens (9) is arranged. The light collecting lens reduces the directivity angle of light emitted from the LED light source unit in the device thickness direction. Thus, a hollow type planar illuminating device (30) is formed. The surface roughness (Ra) of the surface of the reflecting surface member (2) facing the hollow light guide space (10) is set to satisfy the inequalities of 1 μm
摘要翻译：提供了一种在整个发光表面上具有均匀亮度分布的中空型平面照明装置。在中空单元壳体（1）的底侧设置有反射面构件（2），在与单元壳体的反射面构件相对的一侧配置有发光面构件（3），夹着单元壳体的反射面构件和发光面构件被允许为中空导光空间（10）。其中许多LED在布线板上一排安装的LED光源单元（5）被布置成与中空导光空间的两侧或一侧相邻，使得光被发射到空心导光空间。在LED光源单元与中空导光空间的端面之间布置有聚光透镜（9）。聚光透镜降低了从LED光源单元在器件厚度方向发射的光的方向角。因此，形成中空型面状照明装置（30）。面向中空导光空间（10）的反射面构件（2）的表面的表面粗糙度（Ra）设定为满足1μm

4. 发明申请

US20130001627A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20130001627A1
公开(公告)日：2013-01-03
申请号：US13634065
申请日：2011-04-14
申请人： Junichi Kinoshita , Yuji Takeda , Naoki Wada , Masami Takagi , Toshiyuki Arai , Hirozumi Nakamura , Naoki Toyoda , Yoji Kawasaki , Misaki Ueno
发明人： Junichi Kinoshita , Yuji Takeda , Naoki Wada , Masami Takagi , Toshiyuki Arai , Hirozumi Nakamura , Naoki Toyoda , Yoji Kawasaki , Misaki Ueno
IPC分类号： H01L33/58
CPC分类号： H01S5/02264 , G02B6/0066 , G02B6/0091 , H01L25/0753 , H01L25/0756 , H01L33/58 , H01L33/62 , H01L33/642 , H01L33/647 , H01L2924/0002 , H01S5/005 , H01S5/02208 , H01S5/02212 , H01S5/0222 , H01S5/02276 , H01S5/0228 , H01S5/02296 , H01S5/4018 , H01S5/4043 , H01S5/4056 , H01L2924/00
摘要： According to one embodiment, a light emitting device includes first and second plate electrodes, a light emitting element and an insulator. The first plate electrode includes first and second major surfaces. The second plate electrode includes third and fourth major surfaces. The light emitting element is placed between the first surface and third major surfaces. The light emitting element includes a semiconductor stacked body having a fifth major surface and a sixth major surface, a first electrode and a second electrode. The semiconductor stacked body includes a light emitting layer. Optical axis is made perpendicular to a side surface of the semiconductor stacked body. The insulator is provided in contact with the first and second plate electrodes and including a window. The light beam is enabled to pass through the window and to be emitted outward.
摘要翻译：根据一个实施例，发光器件包括第一和第二平板电极，发光元件和绝缘体。第一平板电极包括第一和第二主表面。第二平板电极包括第三和第四主表面。发光元件放置在第一表面和第三主表面之间。发光元件包括具有第五主表面和第六主表面的半导体层叠体，第一电极和第二电极。半导体层叠体包括发光层。使光轴垂直于半导体层叠体的侧面。绝缘体设置成与第一和第二平板电极接触并且包括窗口。光束能够通过窗口并向外发射。

5. 发明授权

US08252651B2 Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US08252651B2
公开(公告)日：2012-08-28
申请号：US13046750
申请日：2011-03-13
申请人： Yoji Kawasaki
发明人： Yoji Kawasaki
IPC分类号： H01L21/336
CPC分类号： H01L21/26586 , H01L21/26513 , H01L21/2652 , H01L29/66803 , H01L29/785
摘要： A semiconductor device having a FIN type transistor including a FIN-shape semiconductor portion improved for reliability by suppressing scattering of the characteristics of the FIN-shape transistor by decreasing a difference between impurity concentration at an upper surface and impurity concentration on a lateral side of the FIN-shape semiconductor portion, in which a pad insulating film at a thickness of about 2 to 5 nm is formed to the upper surface of the FIN-shape semiconductor portion, cluster ions are implanted to one lateral side of the FIN-shape semiconductor portion from an oblique direction at a first implantation angle θ1 and then cluster ions are implanted to another lateral side of the FIN-shape semiconductor portion from an oblique direction at a second implantation angle θ2 in symmetrical with the first implantation angle θ1 and, subsequently, the cluster ions implanted to the FIN-shape semiconductor portion 10 are activated to form a diffusion region that forms a portion of a source region and a drain region.
摘要翻译：一种具有FIN型晶体管的半导体器件，其包括通过减小上表面的杂质浓度与外部侧杂质浓度之间的差异来抑制FIN形状晶体管的特性的散射而提高可靠性的FIN型晶体管在FIN型半导体部的上表面形成厚度约2〜5nm的焊垫绝缘膜的FIN型半导体部，将簇离子注入到FIN型半导体部的一侧面从倾斜方向以第一注入角度＆amp; 1;然后将簇离子从倾斜方向以第一注入角度θ与第一注入角度θ对称地注入到FIN形状半导体部分的另一侧面; 1，并且随后，注入到FIN形状半导体部分10的簇离子被激活以形成扩散区域在其上形成源极区域和漏极区域的一部分。

6. 发明申请

US20120212931A1 LIGHT EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20120212931A1
公开(公告)日：2012-08-23
申请号：US13370385
申请日：2012-02-10
申请人： Junichi KINOSHITA , Yuji TAKEDA , Yoji KAWASAKI , Misaki UENO
发明人： Junichi KINOSHITA , Yuji TAKEDA , Yoji KAWASAKI , Misaki UENO
IPC分类号： F21V9/16
CPC分类号： G02B6/0003 , F21K9/61 , F21K9/64 , F21V2200/30 , F21Y2115/10 , F21Y2115/30 , G02B6/0055 , G02B6/0068 , G02B6/0073
摘要： A light emitting device includes a first light source, an optical waveguide body, a light emitting layer and a first reflection layer. The optical waveguide body includes a first end surface to which light from the first light source is injected, and a second end surface opposed to the first end surface and provided in a light guiding direction of the light. The light emitting layer includes, along the light guiding direction, phosphor particles capable of absorbing the light and emitting wavelength converted light or a light diffusing agent diffusing the light. The first reflection layer is provided on the second end surface and is capable of reflecting part of the light guided in the optical waveguide body. Diffused light from the light emitting layer is emitted to outside of the optical waveguide body.
摘要翻译：发光器件包括第一光源，光波导体，发光层和第一反射层。所述光波导体包括从所述第一光源注入的光的第一端面和与所述第一端面相对设置且沿所述光的导光方向设置的第二端面。发光层沿着导光方向包括能够吸收光并发射波长转换的光的荧光体粒子或漫射光的光漫射剂。第一反射层设置在第二端面上，并且能够反射在光波导体中引导的光的一部分。来自发光层的漫射光被发射到光波导体的外部。

7. 发明申请

US20080242066A1 Method Of Manufacturing Semiconductor 审中-公开
标题翻译：半导体制造方法
公开(公告)号：US20080242066A1
公开(公告)日：2008-10-02
申请号：US11577572
申请日：2005-10-07
申请人： Dale C. Jacobson , Yoji Kawasaki
发明人： Dale C. Jacobson , Yoji Kawasaki
IPC分类号： H01L21/265
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/2658 , H01L21/26586 , H01L21/324 , H01L21/823814 , H01L29/1045 , H01L29/1083 , H01L29/4933 , H01L29/665 , H01L29/6659
摘要： A method of producing ultra shallow junctions (104) for PMOS transistors, which eliminates the need for pre-amorphization implants, is disclosed. The method utilizes dopant species, such as cluster ions, e.g., octadecaborane, B18H22. In accordance with the present invention, the pre-amorphizing step may be eliminated, greatly reducing cost per processed wafer. An appropriate process sequence has been suggested to take advantage of cluster ion implantation for PMOS manufacturing. In addition, the novel use of tilted implants for the source/drain extension and for pocket implants has been described.
摘要翻译：公开了一种用于生产用于PMOS晶体管的超浅结（104）的方法，其不需要预非晶化植入物。该方法利用掺杂剂物质，例如簇离子，例如十八硼烷，B 18 H 22。根据本发明，可以消除预非晶化步骤，大大降低每个加工晶片的成本。已经提出了适当的工艺顺序来利用用于PMOS制造的簇离子注入。此外，已经描述了用于源极/漏极延伸部和袋状植入物的倾斜植入物的新颖使用。

8. 发明申请

US20100059767A1 Surface Light-Emitting Device and Display Device Using the Same 审中-公开
标题翻译：表面发光装置及使用其的显示装置
公开(公告)号：US20100059767A1
公开(公告)日：2010-03-11
申请号：US12555856
申请日：2009-09-09
申请人： Yoji KAWASAKI , Ryuji TSUCHIYA
发明人： Yoji KAWASAKI , Ryuji TSUCHIYA
IPC分类号： H01L33/00
CPC分类号： G02F1/133615 , G02B6/0055 , G02B6/0068 , G02B6/0073 , G02B6/0096
摘要： A surface light-emitting device is disclosed, in which a plurality of spot light sources are arranged along the side surface of a housing of the device, and the light emitted from the spot light sources located at the end portions of the spot light source sequence emits a lower light flux than the average light flux of the light emitted from the other spot light sources. The spot light source sequence is, for example, an LED array including an alignment of light-emitting diodes (LEDs). The LED array includes two groups of LED elements arranged in a predetermined repetitive pattern from one and the other ends, respectively, of the LED array, and at least an LED emitting low light flux is arranged at a predetermined position in the vicinity of the center of the array. As a result, the requirement for a reduced thickness and a narrower frame can be met, while at the same time producing the white light of uniform chromaticity over the whole light-emitting surface.
摘要翻译：公开了一种表面发光装置，其中多个点光源沿着装置的壳体的侧表面布置，并且从位于点光源序列的端部的点光源发射的光发射比从其他聚光光源发射的光的平均光通量更低的光通量。点光源序列例如是包括发光二极管（LED）的对准的LED阵列。 LED阵列包括分别从LED阵列的一端和另一端以预定的重复图案布置的两组LED元件，并且至少一个发射低光通量的LED布置在中心附近的预定位置的数组。结果，可以满足减小厚度和较窄框架的要求，同时在整个发光表面上产生均匀色度的白光。

9. 发明申请

US20110269282A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20110269282A1
公开(公告)日：2011-11-03
申请号：US13046750
申请日：2011-03-13
申请人： Yoji KAWASAKI
发明人： Yoji KAWASAKI
IPC分类号： H01L21/336
CPC分类号： H01L21/26586 , H01L21/26513 , H01L21/2652 , H01L29/66803 , H01L29/785
摘要： A semiconductor device having a FIN type transistor including a FIN-shape semiconductor portion improved for reliability by suppressing scattering of the characteristics of the FIN-shape transistor by decreasing a difference between impurity concentration at an upper surface and impurity concentration on a lateral side of the FIN-shape semiconductor portion, in which a pad insulating film at a thickness of about 2 to 5 nm is formed to the upper surface of the FIN-shape semiconductor portion, cluster ions are implanted to one lateral side of the FIN-shape semiconductor portion from an oblique direction at a first implantation angle θ1 and then cluster ions are implanted to another lateral side of the FIN shape semiconductor portion from an oblique direction at a second implantation angle θ2 in symmetrical with the first implantation angle θ1 and, subsequently, the cluster ions implanted to the FIN-shape semiconductor portion 10 are activated to form a diffusion region that forms a portion of a source region and a drain region.
摘要翻译：一种具有FIN型晶体管的半导体器件，其包括通过减小上表面的杂质浓度与外部侧杂质浓度之间的差异来抑制FIN形状晶体管的特性的散射而提高可靠性的FIN型晶体管在FIN型半导体部的上表面形成厚度约2〜5nm的焊垫绝缘膜的FIN型半导体部，将簇离子注入到FIN型半导体部的一侧面从倾斜方向以第一注入角度＆amp; 1;然后将簇离子从倾斜方向以第一注入角度θ与第一注入角度θ对称地注入到FIN形状半导体部分的另一侧面; 1 并且随后，注入到FIN形状半导体部分10的簇离子被激活以形成扩散区在其上形成源极区域和漏极区域的一部分。

10. 发明申请

US20120049201A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120049201A1
公开(公告)日：2012-03-01
申请号：US13182750
申请日：2011-07-14
申请人： Tadashi YAMAGUCHI , Keiichiro Kashihara , Yoji Kawasaki
发明人： Tadashi YAMAGUCHI , Keiichiro Kashihara , Yoji Kawasaki
IPC分类号： H01L27/092 , H01L21/8238
CPC分类号： H01L21/823807 , H01L21/823814 , H01L29/7848
摘要： In a CMIS device, to improve the operating characteristics of an n-channel electric field transistor that is formed by using a strained silicon technique, without degrading the operating characteristics of a p-channel field effect transistor. After forming a source/drain (an n-type extension region and an n-type diffusion region) of an nMIS and a source/drain (a p-type extension region and a p-type diffusion region) of a pMIS, the each source/drain having a desired concentration profile and resistance, a Si:C layer having a desired amount of strain is formed in the n-type diffusion region, and thus the optimum parasitic resistance and the optimum amount of strain in the Si:C layer are obtained in the source/drain of the nMIS. Moreover, by performing a heat treatment in forming the Si:C layer in a short time equal to or shorter than 1 millisecond, a change in the concentration profile of the respective p-type impurities of the already-formed p-type extension region and p-type diffusion region is suppressed.
摘要翻译：在CMIS器件中，为了改善通过使用应变硅技术形成的n沟道电场晶体管的工作特性，而不降低p沟道场效应晶体管的工作特性。在形成pISIS的nMIS和源极/漏极（p型延伸区域和p型扩散区域）的源极/漏极（n型延伸区域和n型扩散区域）之后，源极/漏极具有所需的浓度分布和电阻，在n型扩散区域中形成具有所需量的应变的Si：C层，因此Si：C层中的最佳寄生电阻和最佳应变量在nMIS的源/漏中获得。此外，通过在等于或短于1毫秒的短时间内形成Si：C层进行热处理，已经形成的p型延伸区域的各个p型杂质的浓度分布的变化和 p型扩散区被抑制。

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