专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06686257B1 Method for transferring epitaxy layer 有权
标题翻译：转移外延层的方法
公开(公告)号：US06686257B1
公开(公告)日：2004-02-03
申请号：US10253575
申请日：2002-10-04
申请人： YewChung Sermon Wu , PeiYan Lin
发明人： YewChung Sermon Wu , PeiYan Lin
IPC分类号： H01L2130
CPC分类号： H01L21/76251 , H01L21/2007
摘要： A method for transferring an epitaxy layer is provided. The method includes steps of (a) providing a first substrate, (b) forming a first epitaxy layer on the first substrate, (c) forming a masking layer having at least a pattern on the first epitaxy layer, (d) forming a second epitaxy layer on the masking layer, (e) bonding a second substrate to the second epitaxy layer, and (f) removing the masking layer and separating the second epitaxy layer from the first epitaxy layer, thereby the second epitaxy layer being transferred to the second substrate.
摘要翻译：提供了一种转移外延层的方法。该方法包括以下步骤：（a）提供第一衬底，（b）在第一衬底上形成第一外延层，（c）在第一外延层上形成至少具有图案的掩模层，（d）掩模层上的外延层，（e）将第二衬底接合到第二外延层，以及（f）去除掩模层并将第二外延层与第一外延层分离，由此将第二外延层转移到第二外延层基质。

2. 发明授权

US07455885B2 Selective area growth carbon nanotubes by metal imprint method 失效
标题翻译：通过金属印迹法选择性生长碳纳米管
公开(公告)号：US07455885B2
公开(公告)日：2008-11-25
申请号：US11402528
申请日：2006-04-11
申请人： YewChung Sermon Wu , Chi Wei Chao , Chih Yuan Hou
发明人： YewChung Sermon Wu , Chi Wei Chao , Chih Yuan Hou
IPC分类号： B05D3/00
CPC分类号： D01F9/12 , B82Y30/00 , Y10S977/742 , Y10S977/842 , Y10S977/888 , Y10T428/2975 , Y10T428/30
摘要： Manufacturing methods of using a metal imprint technique for growing carbon nanotubes on selective areas and the structures formed thereof are provided. One of the manufacturing methods includes steps of forming a first substrate with tapered structures applied with a metal catalyst, imprinting a second substrate on the first substrate for being a growth substrate, and growing carbon nanotubes on the growth substrate. The other manufacturing method includes steps of forming a first substrate with tapered structures, imprinting the first substrate on a second substrate applied with a metal catalyst for forming a second growth substrate, and growing carbon nanotubes on the second grown substrate. And, the formed structures of the present invention include a substrate, plural carbon nanotubes, and plural imprinted vestiges.
摘要翻译：提供了使用金属压印技术在选择性区域上生长碳纳米管的制造方法及其形成的结构。一种制造方法包括以下步骤：形成具有应用金属催化剂的锥形结构的第一衬底，将第二衬底压印在第一衬底上作为生长衬底，以及在生长衬底上生长碳纳米管。另一种制造方法包括以下步骤：形成具有锥形结构的第一衬底，将第一衬底压印在施加有用于形成第二生长衬底的金属催化剂的第二衬底上，以及在第二生长衬底上生长碳纳米管。并且，本发明的形成结构包括基板，多个碳纳米管和多个印迹的痕迹。

3. 发明授权

US08796071B2 Thermal dissipation substrate 有权
标题翻译：散热基板
公开(公告)号：US08796071B2
公开(公告)日：2014-08-05
申请号：US13548477
申请日：2012-07-13
申请人： YewChung Sermon Wu , Tai-Min Chang , Yu Chia Chiu , Jen-Li Hu
发明人： YewChung Sermon Wu , Tai-Min Chang , Yu Chia Chiu , Jen-Li Hu
IPC分类号： H01L21/00
CPC分类号： H01L23/142 , H01L21/4871 , H01L23/147 , H01L23/3732 , H01L33/641 , H01L2924/0002 , H01L2924/00
摘要： The present invention related to a method for manufacturing a thermal dissipation substrate and a thermal dissipation substrate. The method includes steps of: (a) providing a substrate body having a surface; (b) forming a plurality of concave regions on the surface; and (c) filling the plurality of concave regions with a plurality of diamond materials. The thermal dissipation substrate includes: a substrate having a surface at a first horizontal; a plurality of regions formed on the surface at a second horizontal; and a plurality of diamond materials having a relatively high thermal coefficient and disposed on the plurality of regions.
摘要翻译：本发明涉及一种制造散热基板和散热基板的方法。该方法包括以下步骤：（a）提供具有表面的基底主体; （b）在表面上形成多个凹区; 和（c）用多个金刚石材料填充多个凹入区域。散热基板包括：具有在第一水平面的表面的基板; 在第二水平面上形成在表面上的多个区域; 以及多个具有相对高的热系数的金刚石材料，并且设置在多个区域上。

4. 发明申请

US20130001752A1 METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS 审中-公开
标题翻译：半导体制造工艺的方法
公开(公告)号：US20130001752A1
公开(公告)日：2013-01-03
申请号：US13415251
申请日：2012-03-08
申请人： YewChung Sermon Wu , Yu-Chung Chen
发明人： YewChung Sermon Wu , Yu-Chung Chen
IPC分类号： H01L29/06 , H01L21/302 , H01L21/26
CPC分类号： H01L21/0237 , H01L21/02639 , H01L21/0265 , H01L21/02664 , H01L33/0079
摘要： The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming on the growing substrate to have plural grooves; forming a semiconductor element layer on the growing substrate; and changing the temperature of the growing substrate and the semiconductor element layer so as to separate the semiconductor element layer from the growing substrate.
摘要翻译：本发明涉及一种制造半导体的方法，包括以下步骤：提供生长衬底; 在生长基板上形成具有多个凹槽; 在生长衬底上形成半导体元件层; 并且改变生长衬底和半导体元件层的温度，以将半导体元件层与生长衬底分离。

5. 发明申请

US20070087485A1 METHODS FOR FABRICATING POLYSILICON FILM AND THIN FILM TRANSISTORS 有权
标题翻译：制备多晶硅薄膜和薄膜晶体管的方法
公开(公告)号：US20070087485A1
公开(公告)日：2007-04-19
申请号：US11163397
申请日：2005-10-17
申请人： YewChung Sermon Wu , Chih-Yuan Hou , Guo-Ren Hu , Po-Chih Liu
发明人： YewChung Sermon Wu , Chih-Yuan Hou , Guo-Ren Hu , Po-Chih Liu
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L21/2026 , H01L21/02532 , H01L27/1285 , H01L29/66757 , Y10S438/977
摘要： A method for fabricating polysilicon film is disclosed. First, a first substrate is provided, wherein a plurality of sunken patterns has been formed on the front surface of the first substrate. Then, a second substrate is provided and an amorphous polysilicon film is formed on the second substrate. Next, the amorphous polysilicon film formed on the second substrate is in contact with the front surface of the first substrate. The amorphous polysilicon film is transferred into a polysilicon film by performing an annealing process. Then, the first substrate and the second substrate are separated from each other. This method reduces the cost and the time for fabricating polysilicon film.
摘要翻译：公开了制造多晶硅膜的方法。首先，提供第一基板，其中在第一基板的前表面上形成有多个下沉图案。然后，提供第二基板，在第二基板上形成非晶多晶硅膜。接下来，形成在第二基板上的非晶多晶硅膜与第一基板的前表面接触。通过进行退火处理将非晶多晶硅膜转移到多晶硅膜中。然后，第一基板和第二基板彼此分离。该方法降低了制造多晶硅膜的成本和时间。

6. 发明授权

US08906778B2 Method of semiconductor manufacturing process 有权
标题翻译：半导体制造工艺方法
公开(公告)号：US08906778B2
公开(公告)日：2014-12-09
申请号：US13163378
申请日：2011-06-17
申请人： YewChung Sermon Wu , Bau-Ming Wang , Feng-Ching Hsiao
发明人： YewChung Sermon Wu , Bau-Ming Wang , Feng-Ching Hsiao
IPC分类号： H01L21/30 , H01L21/46 , H01L21/02 , H01L21/18 , H01L33/00
CPC分类号： H01L21/02658 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02664 , H01L21/187 , H01L33/0079
摘要： The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.
摘要翻译：本发明涉及一种制造半导体的方法，包括以下步骤：提供生长衬底; 在生长衬底上形成半导体衬底; 形成具有多个凹槽的第一结构，并且在所述生长衬底和所述半导体衬底之间; 并且改变生长衬底和半导体衬底的温度。

7. 发明申请

US20120273803A1 THERMAL DISSIPATION SUBSTRATE 有权
标题翻译：热释放基板
公开(公告)号：US20120273803A1
公开(公告)日：2012-11-01
申请号：US13548477
申请日：2012-07-13
申请人： YewChung Sermon Wu , Tai-Min Chang , Yu Chia Chiu , Jen-Li Hu
发明人： YewChung Sermon Wu , Tai-Min Chang , Yu Chia Chiu , Jen-Li Hu
IPC分类号： H01L29/02 , H01L21/50
CPC分类号： H01L23/142 , H01L21/4871 , H01L23/147 , H01L23/3732 , H01L33/641 , H01L2924/0002 , H01L2924/00
摘要： The present invention related to a method for manufacturing a thermal dissipation substrate and a thermal dissipation substrate. The method includes steps of: (a) providing a substrate body having a surface; (b) forming a plurality of concave regions on the surface; and (c) filling the plurality of concave regions with a plurality of diamond materials. The thermal dissipation substrate includes: a substrate having a surface at a first horizontal; a plurality of regions formed on the surface at a second horizontal; and a plurality of diamond materials having a relatively high thermal coefficient and disposed on the plurality of regions.
摘要翻译：本发明涉及一种制造散热基板和散热基板的方法。该方法包括以下步骤：（a）提供具有表面的基底主体; （b）在表面上形成多个凹区; 和（c）用多个金刚石材料填充多个凹入区域。散热基板包括：具有在第一水平面的表面的基板; 在第二水平面上形成在表面上的多个区域; 以及多个具有相对高的热系数的金刚石材料，并且设置在多个区域上。

8. 发明申请

US20120231614A1 METHOD OF SEMICONDUCTOR MANUFACTURING PROCESS 有权
标题翻译：半导体制造工艺的方法
公开(公告)号：US20120231614A1
公开(公告)日：2012-09-13
申请号：US13163378
申请日：2011-06-17
申请人： YewChung Sermon Wu , Bau-Ming Wang , Feng-Ching Hsiao
发明人： YewChung Sermon Wu , Bau-Ming Wang , Feng-Ching Hsiao
IPC分类号： H01L21/20 , H01L21/26
CPC分类号： H01L21/02658 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/02664 , H01L21/187 , H01L33/0079
摘要： The present invention related to a method for manufacturing a semiconductor, comprising steps of: providing a growing substrate; forming a semiconductor substrate on the growing substrate; forming a first structure with plural grooves and between the growing substrate and the semiconductor substrate; and changing the temperature of the growing substrate and the semiconductor substrate.
摘要翻译：本发明涉及一种制造半导体的方法，包括以下步骤：提供生长衬底; 在生长衬底上形成半导体衬底; 形成具有多个凹槽的第一结构，并且在所述生长衬底和所述半导体衬底之间; 并改变生长衬底和半导体衬底的温度。

9. 发明授权

US07629209B2 Methods for fabricating polysilicon film and thin film transistors 有权
标题翻译：制造多晶硅膜和薄膜晶体管的方法
公开(公告)号：US07629209B2
公开(公告)日：2009-12-08
申请号：US11163397
申请日：2005-10-17
申请人： YewChung Sermon Wu , Chih-Yuan Hou , Guo-Ren Hu , Po-Chih Liu
发明人： YewChung Sermon Wu , Chih-Yuan Hou , Guo-Ren Hu , Po-Chih Liu
IPC分类号： H01L21/84
CPC分类号： H01L21/2026 , H01L21/02532 , H01L27/1285 , H01L29/66757 , Y10S438/977
摘要： A method for fabricating polysilicon film is disclosed. First, a first substrate is provided, wherein a plurality of sunken patterns has been formed on the front surface of the first substrate. Then, a second substrate is provided and an amorphous polysilicon film is formed on the second substrate. Next, the amorphous polysilicon film formed on the second substrate is in contact with the front surface of the first substrate. The amorphous polysilicon film is transferred into a polysilicon film by performing an annealing process. Then, the first substrate and the second substrate are separated from each other. This method reduces the cost and the time for fabricating polysilicon film.
摘要翻译：公开了制造多晶硅膜的方法。首先，提供第一基板，其中在第一基板的前表面上形成有多个下沉图案。然后，提供第二基板，在第二基板上形成非晶多晶硅膜。接下来，形成在第二基板上的非晶多晶硅膜与第一基板的前表面接触。通过进行退火处理将非晶多晶硅膜转移到多晶硅膜中。然后，第一基板和第二基板彼此分离。该方法降低了制造多晶硅膜的成本和时间。

10. 发明申请

US20080116461A1 Semiconductor device and manufacturing method thereof 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20080116461A1
公开(公告)日：2008-05-22
申请号：US11812483
申请日：2007-06-19
申请人： YewChung-Sermon Wu , Chih-Yuan Hou , Chi-Ching Lin , Guo-Ren Hu
发明人： YewChung-Sermon Wu , Chih-Yuan Hou , Chi-Ching Lin , Guo-Ren Hu
IPC分类号： H01L29/06 , H01L21/336
CPC分类号： H01L21/02422 , H01L21/02532 , H01L21/02664 , H01L21/02672 , H01L27/1277
摘要： A manufacturing method of a semiconductor device, includes the following steps: providing a substrate with an insulated surface; forming an amorphous silicon layer on the insulated surface; imposing a catalytic metal element on the amorphous silicon layer; heating and catalyzing the amorphous silicon layer to form a poly-silicon layer; forming a diffusion layer and a gettering material layer on the poly-silicon layer in order; proceeding an annealing process on the gettering material layer and the poly-silicon layer to move the residual metal catalyst element from the poly-silicon layer toward the gettering material layer due to the concentration gradient; and removing the diffusion layer and the gettering material layer.
摘要翻译：半导体器件的制造方法包括以下步骤：向基板提供绝缘表面; 在绝缘表面上形成非晶硅层; 在非晶硅层上施加催化金属元素; 加热和催化非晶硅层以形成多晶硅层; 在多晶硅层上依次形成扩散层和吸杂材料层; 对吸杂材料层和多晶硅层进行退火处理，以使残留的金属催化剂元素从多晶硅层向浓度梯度向吸气材料层移动; 并除去扩散层和吸气材料层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式