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    • 5. 发明授权
    • Optical communication module
    • 光通信模块
    • US06805495B2
    • 2004-10-19
    • US10230402
    • 2002-08-29
    • Satoshi YoshikawaHiromi KurashimaYasushi Fujimura
    • Satoshi YoshikawaHiromi KurashimaYasushi Fujimura
    • G02B638
    • G02B6/4201G02B6/421G02B6/4233G02B6/4243G02B6/4257G02B6/426G02B6/4265
    • The present invention provides an optical module in which the level of the lead frame coincides with the optical axis of the fiber. The module 1 comprises a container 4, a subassembly 2, a base member 5 and a lead frame 6. The subassembly 2 includes a substrate, on which the semiconductor optical device and the optical fiber are mounted. The container 4 has a pair of surface. One surface is securing the lead frame thereon while the base member is attached to the other surface of the container 4. The base member comprises an island portion and a frame portion. The subassembly 2 is placed on the island and the frame portion is fixed to the container 4. Island support portions connecting the island portion to the frame portion is deformed in the molding process, thus aligning the subassembly 2.
    • 本发明提供了一种光学模块,其中引线框架的高度与光纤的光轴重合。 模块1包括容器4,子组件2,基座构件5和引线框架6.子组件2包括其上安装半导体光学器件和光纤的衬底。 容器4具有一对表面。 一个表面将引线框架固定在其上,同时基座构件附接到容器4的另一个表面。基座构件包括岛部分和框架部分。 子组件2放置在岛上并且框架部分固定到容器4上。在模制过程中将岛部分连接到框架部分的岛状支撑部分变形,从而对准子组件2。
    • 6. 发明授权
    • Light receiving module includes a signal processing semiconductor element
    • 光接收模块包括信号处理半导体元件
    • US06576888B2
    • 2003-06-10
    • US09931164
    • 2001-08-17
    • Yasushi FujimuraYuuji Kida
    • Yasushi FujimuraYuuji Kida
    • G01J104
    • G02B6/4214G02B6/421G02B6/4224G02B6/4228G02B6/423G02B6/4243G02B6/4245G02B6/4248G02B6/4265G02B6/4274G02B6/4285
    • An light receiving module 2 consists of a mount substrate 20, an optical fiber 18, a semiconductor photodetector 22, a mount member 26, and a signal processing semiconductor element 28. The mount member 26 has a pair of arm portions and a joint portion. Each arm portion extends along a first direction. The joint portion extends along a direction perpendicular to the first direction and connects the pair of arm portions. The optical fiber 18 has a first end and a second end. The semiconductor photodetector 22 has a light incidence surface optically coupled to the first end of the optical fiber 18, and a light receiving element part. The mount substrate 20 is placed between the pair of arm portions of the mount member 26 and carries the optical fiber 18 and the semiconductor photodetector 20. The signal processing semiconductor element 28 is placed on the mount member 26 and processes a signal from the semiconductor photodetector 22.
    • 光接收模块2由安装基板20,光纤18,半导体光电检测器22,安装构件26和信号处理半导体元件28组成。安装构件26具有一对臂部和接合部。 每个臂部分沿着第一方向延伸。 接头部分沿垂直于第一方向的方向延伸,并连接一对臂部。 光纤18具有第一端和第二端。 半导体光电检测器22具有光耦合到光纤18的第一端的光入射表面和光接收元件部分。 安装基板20被放置在安装构件26的一对臂部之间,并且承载光纤18和半导体光电检测器20.信号处理半导体元件28被放置在安装构件26上,并处理来自半导体光电检测器 22。
    • 7. 发明授权
    • Semiconductor light-receiving device
    • 半导体光接收装置
    • US06445020B2
    • 2002-09-03
    • US09817355
    • 2001-03-22
    • Yasushi Fujimura
    • Yasushi Fujimura
    • H01L27148
    • H01L31/03046H01L31/105Y02E10/544
    • A semiconductor light-receiving device 1a comprises a first InP layer 12 having a first conductive type region 20a, a second InP layer 16 having a second conductive type, and an InGaAs light-receiving layer 14 disposed between these layers 12, 16. The InP layer 16 of second conductive type has a maximum carrier concentration of 1×1017 cm−3 or higher. Because of this carrier concentration, the depletion layer caused by an applied reverse bias to extend into the InP layer 16 becomes sufficiently small. Therefore, this depletion layer spreads within the light-receiving layer 14 in which electron-hole pairs are generated. Hence, the applied voltage can fully be utilized for drifting generated carriers. Thus provided is a semiconductor light-receiving device in which the occurrence of wave tails is reduced.
    • 半导体光接收装置1a包括具有第一导电类型区域20a的第一InP层12,具有第二导电类型的第二InP层16和设置在这些层12,16之间的InGaAs光接收层14。 第二导电类型的层16具有1×10 17 cm -3以上的最大载流子浓度。 由于这种载流子浓度,由施加的反向偏压引起的延伸到InP层16中的耗尽层变得足够小。 因此,该耗尽层在产生电子 - 空穴对的光接收层14内扩散。 因此,施加的电压可以完全用于漂移所产生的载体。 因此,提供了一种减少波尾发生的半导体光接收装置。