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1. 发明授权

US08470694B2 Apparatus and method for growing nitride semiconductor crystal film 有权
标题翻译：用于生长氮化物半导体晶体膜的装置和方法
公开(公告)号：US08470694B2
公开(公告)日：2013-06-25
申请号：US13024395
申请日：2011-02-10
申请人： Shinichi Tanaka , Tomoaki Kodama , Mutsumi Morita , Masayuki Kanechika , Masayuki Makishima , Yasuro Kingo , Toshiyuki Sugawara
发明人： Shinichi Tanaka , Tomoaki Kodama , Mutsumi Morita , Masayuki Kanechika , Masayuki Makishima , Yasuro Kingo , Toshiyuki Sugawara
IPC分类号： H01L21/20
CPC分类号： H01L21/0254 , C23C16/303 , C23C16/45502 , C23C16/45517 , C23C16/45519 , C23C16/45591 , C30B25/14 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/02573 , H01L21/0262
摘要： An apparatus for growing a nitride semiconductor crystal film, comprises a chamber that can control inside temperature and air pressure, a susceptor supported by a rotating shaft inside the chamber and on which a growth substrate is placed, a reactant gas supplier that emits reactant gas to the growth substrate in parallel to a surface of the growth substrate, a first subflow gas supplier that emits first subflow gas for pressing the reactant gas down to the surface of the growth substrate at an inclination angle of 45 to 90 degrees in a same in-plane direction as the reactant gas, a second subflow gas supplier that emits second subflow gas for removing the reactant gas from an periphery of the growth substrate to the surface at an inclination angle of 45 to 90 degrees, and an exhaust device that exhausts gas from the chamber.
摘要翻译：用于生长氮化物半导体晶体膜的装置包括可以控制内部温度和空气压力的室，由室内的旋转轴支撑并且其上放置生长衬底的基座，将反应气体发射到所述生长衬底平行于所述生长衬底的表面;第一子流气体供应器，其以相同的方式在45度至90度的倾斜角度处发射用于将所述反应物气体按压到所述生长衬底的表面的第一子流气体，平面方向作为反应气体，第二子流气体供给器，其以45〜90度的倾斜角度发射用于将反应气体从生长基板的周边除去的表面的第二子流气体，以及排出装置，房间。

2. 发明授权

US07023132B2 Organic EL display element 有权
标题翻译：有机EL显示元件
公开(公告)号：US07023132B2
公开(公告)日：2006-04-04
申请号：US10618723
申请日：2003-07-15
申请人： Akio Ogawa , Koichi Takayama , Atsushi Nagasaki , Yasuro Kingo
发明人： Akio Ogawa , Koichi Takayama , Atsushi Nagasaki , Yasuro Kingo
IPC分类号： H05B33/14 , H05B33/22
CPC分类号： H05B33/26 , H01L27/3281 , H01L51/5231 , H01L51/524 , H05B33/22
摘要： In conventional organic EL display elements of this type, unevenness of brightness surely occurs at high temperatures. These conventional organic elements cannot be used in, for example, display devices to be mounted on vehicles, giving rise to the problem of inferior generalities. An organic EL display element 1 according to the present invention comprises a stress relaxation layer on a cathode after the cathode is formed, the stress relaxation layer being a film which exhibits tensile stress when the film stress of the cathode is compressive stress or exhibits compressive stress when the film stress of the cathode is tensile stress. This structure allows the organic EL display element to prevent the occurrence of unevenness of brightness caused by the film stress of the cathode to solve the problem and makes it possible to give generalities to organic EL display elements of this type.
摘要翻译：在这种传统的有机EL显示元件中，在高温下确保亮度不均匀。这些常规有机元件不能用于例如显示装置安装在车辆上，从而导致差的一般性问题。根据本发明的有机EL显示元件1包括在阴极形成之后的阴极上的应力松弛层，应力松弛层是当阴极的膜应力是压应力或呈现压应力时呈现拉伸应力的膜当阴极的膜应力为拉应力时。该结构允许有机EL显示元件防止由于阴极的膜应力而引起的亮度不均匀性，以解决该问题，并且可以给出这种类型的有机EL显示元件的一般性。

3. 发明申请

US20110201181A1 APPARATUS AND METHOD FOR GROWING NITRIDE SEMICONDUCTOR CRYSTAL FILM 有权
标题翻译：用于生长氮化物半导体晶体膜的装置和方法
公开(公告)号：US20110201181A1
公开(公告)日：2011-08-18
申请号：US13024395
申请日：2011-02-10
申请人： Shinichi TANAKA , Tomoaki KODAMA , Mutsumi MORITA , Masayuki KANECHIKA , Masayuki MAKISHIMA , Yasuro KINGO , Toshiyuki SUGAWARA
发明人： Shinichi TANAKA , Tomoaki KODAMA , Mutsumi MORITA , Masayuki KANECHIKA , Masayuki MAKISHIMA , Yasuro KINGO , Toshiyuki SUGAWARA
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L21/0254 , C23C16/303 , C23C16/45502 , C23C16/45517 , C23C16/45519 , C23C16/45591 , C30B25/14 , C30B29/403 , H01L21/0242 , H01L21/02458 , H01L21/02573 , H01L21/0262
摘要： An apparatus for growing a nitride semiconductor crystal film, comprises a chamber that can control inside temperature and air pressure, a susceptor supported by a rotating shaft inside the chamber and on which a growth substrate is placed, a reactant gas supplier that emits reactant gas to the growth substrate in parallel to a surface of the growth substrate, a first subflow gas supplier that emits first subflow gas for pressing the reactant gas down to the surface of the growth substrate at an inclination angle of 45 to 90 degrees in a same in-plane direction as the reactant gas, a second subflow gas supplier that emits second subflow gas for removing the reactant gas from an periphery of the growth substrate to the surface at an inclination angle of 45 to 90 degrees, and an exhaust device that exhausts gas from the chamber.
摘要翻译：用于生长氮化物半导体晶体膜的装置包括可以控制内部温度和空气压力的室，由室内的旋转轴支撑并且其上放置生长衬底的基座，将反应气体发射到所述生长衬底平行于所述生长衬底的表面;第一子流气体供应器，其以相同的方式在45度至90度的倾斜角度处发射用于将所述反应气体按压到所述生长衬底的表面的第一子流气体，平面方向作为反应气体，第二子流气体供给器，其以45〜90度的倾斜角度发射用于将反应气体从生长基板的周边除去的表面的第二子流气体，以及排出装置，房间。

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