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1. 发明授权

US5763904A Non-single crystal semiconductor apparatus thin film transistor and liquid crystal display apparatus 失效
标题翻译：非单晶半导体装置薄膜晶体管和液晶显示装置
公开(公告)号：US5763904A
公开(公告)日：1998-06-09
申请号：US710110
申请日：1996-09-12
申请人： Mitsuo Nakajima , Yasumasa Gotou , Yoshito Kawakyu
发明人： Mitsuo Nakajima , Yasumasa Gotou , Yoshito Kawakyu
IPC分类号： G02F1/1368 , H01L21/285 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L29/76
CPC分类号： H01L29/78618 , H01L21/28512 , H01L27/1214 , H01L29/66757 , G02F1/1368 , H01L29/78603
摘要： A thin film transistor is disclosed, that comprises a first substrate protection film formed on a transparent insulation substrate, a second substrate protection film formed in a predetermined shape on the first substrate protection film, a semiconductor film having a channel region and a contact region formed on the second substrate protection film, the channel region being surrounded by the contact region, a gate insulation film formed above the semiconductor film, the gate insulation film having an opening portion for the contact region of the semiconductor film, a gate electrode formed in a region corresponding to the channel region of the semiconductor film on the gate insulation film, an inter-layer insulation film formed above the gate electrode, the inter-layer insulation film having an opening portion for the contact region of the semiconductor film, and a plurality of electrodes formed on the inter-layer insulation film, the plurality of electrodes being connected to the contact region of the semiconductor film through the opening portion. The edge surfaces of the second substrate protection film may be tapered. A contact state between the gate electrode and the inter-layer insulation film is controlled corresponding to the concentration of hydrogen of the inter-layer insulation film.
摘要翻译：公开了一种薄膜晶体管，其包括形成在透明绝缘基板上的第一基板保护膜，在第一基板保护膜上形成为预定形状的第二基板保护膜，形成有沟道区域和接触区域的半导体膜在所述第二基板保护膜上，所述沟道区域被所述接触区域包围，形成在所述半导体膜上方的栅极绝缘膜，所述栅极绝缘膜具有用于所述半导体膜的接触区域的开口部分，对应于栅极绝缘膜上的半导体膜的沟道区域的区域，形成在栅极电极上方的层间绝缘膜，层间绝缘膜具有用于半导体膜的接触区域的开口部分和多个形成在所述层间绝缘膜上的电极，所述多个电极连接到所述层间绝缘膜通过开口部分的半导体膜的作用区域。第二基板保护膜的边缘表面可以是锥形的。对应于层间绝缘膜的氢浓度来控制栅电极和层间绝缘膜之间的接触状态。

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