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    • 3. 发明授权
    • Electrically reprogrammable nonvolatile floating gate semi-conductor
memory device and method of operation
    • 电可重编程非挥发性浮栅半导体存储器件及其操作方法
    • US4004159A
    • 1977-01-18
    • US628430
    • 1975-11-03
    • Yasuki RaiTerutoshi SasamiYuzuru HasegawaMasaru Okazoe
    • Yasuki RaiTerutoshi SasamiYuzuru HasegawaMasaru Okazoe
    • H01L21/336H01L29/788H03K5/00H01L27/02H01L29/34H01L29/78
    • H01L29/66825H01L29/7886Y10S438/972
    • A semiconductor memory device comprising a composite structure of semiconductor-insulation layer-floating gate-insulation layer-control gate, in which a periphery of said floating gate is formed to extend up to and immediately above at least one of source and drain regions, such that both overlap each other through the insulation layer therebetween of silicon dioxide and of a thickness of 200 to 400A for more than 0.35 microns in length but not exceeding two times the distance between the source and drain regions. In erasing the contents written in the inventive memory device, a voltage is applied between the substrate and at least one of the source and drain regions in a reverse bias direction with respect to a junction therebetween, while the control gate is supplied with the same potential as that of the substrate or grounded, said erasing voltage being selected to a relatively small value sufficient to cause a Fowler-Nordheim tunnel phenomenon through the first insulation layer between the floating gate and at least one of the source and drain regions at said overlapping area.
    • 一种半导体存储器件,包括半导体绝缘层 - 浮置栅极绝缘层控制栅极的复合结构,其中所述浮置栅极的周边形成为在源极和漏极区域中的至少一个上方延伸到其上方, 它们通过二氧化硅之间的绝缘层彼此重叠并且厚度为200至400A,长度大于0.35微米,但不超过源极和漏极区域之间的距离的两倍。 在擦除写入本发明的存储器件中的内容时,在衬底与源极和漏极区域中的至少一个之间相对于它们之间的接合处以反向偏置方向施加电压,同时向控制栅极提供相同的电位 作为衬底或接地的所述擦除电压被选择为相对较小的值,足以导致在所述重叠区域处的浮置栅极和源极和漏极区域中的至少一个之间的第一绝缘层的Fowler-Nordheim隧道现象 。
    • 5. 发明授权
    • Analog storing and reproducing apparatus utilizing non-volatile memory
elements
    • 使用非易失性存储元件的模拟存储和再现装置
    • US4627027A
    • 1986-12-02
    • US525814
    • 1983-08-23
    • Yasuki RaiYuji KitamuraMinoru Hamada
    • Yasuki RaiYuji KitamuraMinoru Hamada
    • G11C16/14G11C27/00G11C7/00
    • G11C16/14G11C27/005
    • An analog value storing apparatus comprises a semiconductor field-effect device, including a substrate, a source and drain formed to define a channel region, a floating gate embedded in an insulating layer on the channel region, a control gate connected to the ground on the insulating layer above the floating gate, a write voltage source coupled to the source to supply a write voltage to charge the floating gate, a resistor having a relatively high resistance value inserted between the write voltage source and the source, and an analog value voltage source connected to the drain. As a result, the floating gate begins to be charged with the write voltage and the analog voltage and stops being charged with the voltage at the source determined as voltage division of the write voltage and the analog voltage by the high resistance value of the resistor and the internal resistance value of the device. Preferably, an array of a plurality of such devices is used and an analog signal is stored in the form of a series of sampled analog values sampled from the analog signal at the timing of addressing while such devices are addressed sequentially. The stored analog values are read out while the devices are addressed, whereby and original analog signal is reproduced.
    • 模拟值存储装置包括半导体场效应器件,包括衬底,形成为限定沟道区的源极和漏极,嵌入在沟道区上的绝缘层中的浮置栅极,在栅极上连接到地的控制栅极 绝缘层,写入电压源,耦合到源极以提供写入电压以对浮置栅极充电;具有插入在写入电压源和源极之间的相对高的电阻值的电阻器和模拟值电压源 连接到排水管。 结果,浮置栅极开始对写入电压和模拟电压进行充电,并且停止对源极上的电压进行充电,该电压被确定为写入电压和模拟电压的分压由电阻器的高电阻值, 器件的内阻值。 优选地,使用多个这样的装置的阵列,并且模拟信号以寻址定时从模拟信号采样的一系列采样的模拟值的形式存储,而这些装置被顺序地寻址。 存储的模拟值在设备寻址时被读出,从而再现原始模拟信号。