专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060192247A1 Nitride semiconductor light-emitting device and method for fabrication thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20060192247A1
公开(公告)日：2006-08-31
申请号：US11352336
申请日：2006-02-13
申请人： Yasuhito Urashima , Katsuki Kusunoki
发明人： Yasuhito Urashima , Katsuki Kusunoki
IPC分类号： H01L29/792
CPC分类号： H01L33/20
摘要： A nitride semiconductor light-emitting device includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate, wherein a normal line relative to a lateral face of the nitride semiconductor layer is not perpendicular to a normal line relative to a principal plane of the substrate. A method for the production of a nitride semiconductor light-emitting device that includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate includes the steps of covering a first surface of the nitride semiconductor layer with a mask provided with a prescribed pattern, removing the nitride semiconductor layer in regions to be divided into component devices till the substrate, subjecting the nitride semiconductor layer to wet-etching treatment and dividing the nitride semiconductor layer into the component devices.
摘要翻译：氮化物半导体发光器件包括衬底和包括堆叠在衬底上的发光层的氮化物半导体层，其中相对于氮化物半导体层的侧面的法线不垂直于法线基板的主平面。一种生产氮化物半导体发光器件的方法，该氮化物半导体发光器件包括衬底和包括堆叠在衬底上的发光层的氮化物半导体层，包括以下步骤：用设置有掩模的掩模覆盖氮化物半导体层的第一表面规定的图案，将要分割成分量器件的区域中的氮化物半导体层除去直到基板，对氮化物半导体层进行湿蚀刻处理并将氮化物半导体层分割成部件器件。

2. 发明授权

US07935955B2 Group III nitride semiconductor multilayer structure 有权
标题翻译： III族氮化物半导体多层结构
公开(公告)号：US07935955B2
公开(公告)日：2011-05-03
申请号：US10586543
申请日：2005-01-25
申请人： Yasuhito Urashima
发明人： Yasuhito Urashima
IPC分类号： H01L29/04 , H01L29/06 , H01L31/102
CPC分类号： H01L21/02458 , H01L21/0237 , H01L21/02378 , H01L21/0243 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： An object of the present invention is to provide a Group III nitride semiconductor multilayer structure having a smooth surface and exhibiting excellent crystallinity, which multilayer structure employs a low-cost substrate that can be easily processed. Another object is to provide a Group III nitride semiconductor light-emitting device comprising the multilayer structure.The inventive Group III nitride semiconductor multilayer structure comprises a substrate; an AlxGa1-xN (0≦x≦1) buffer layer which is provided on the substrate and has a columnar or island-like crystal structure; and an AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) single-crystal layer provided on the buffer layer, wherein the substrate has, on its surface, non-periodically distributed grooves having an average depth of 0.01 to 5 μm.
摘要翻译：本发明的目的是提供一种具有光滑表面并具有优异结晶度的III族氮化物半导体多层结构，该多层结构采用易于加工的低成本基板。另一个目的是提供一种包括多层结构的III族氮化物半导体发光器件。本发明的III族氮化物半导体多层结构包括基底; Al x Ga 1-x N（0＆nlE; x＆nlE; 1）缓冲层，其设置在基板上并具有柱状或岛状晶体结构; 以及设置在缓冲层上的单晶层，其中所述衬底在其表面上具有非周期性的（例如，平均深度为0.01〜5μm的分布槽。

3. 发明授权

US07803648B2 Nitride semiconductor light-emitting device and method for fabrication thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07803648B2
公开(公告)日：2010-09-28
申请号：US11885974
申请日：2006-02-15
申请人： Yasuhito Urashima
发明人： Yasuhito Urashima
IPC分类号： H01L21/00 , H01L21/36 , H01L21/20
CPC分类号： H01L33/20 , H01L33/32 , H01L33/46
摘要： A nitride semiconductor light-emitting device includes a substrate, a nitride semiconductor layer incorporating therein a first electroconductive semiconductor layer, a light-emitting layer and a second electroconductive semiconductor layer, a transparent electrode contiguous to at least part of a first surface of the second electroconductive semiconductor layer, and a second electrode contiguous to the first electroconductive semiconductor layer; wherein the substrate has a first surface thereof provided with a first region exposed by removal of a first part of the nitride semiconductor layer in a peripheral part of the device and a second region exposed by removal of at least a second part of the nitride semiconductor layer contiguous to the transparent electrode except the peripheral part of the device till the substrate. A method for the production of the device includes removing a first part of the nitride semiconductor layer in a peripheral part of the device till the substrate is exposed to form a first exposed region thereof and removing at least a second part of the nitride semiconductor layer contiguous to the transparent electrode except the peripheral part of the device till the substrate is reached to form a second exposed region thereof, wherein the steps are taken by combining the removal with a laser and the removal by wet etching.
摘要翻译：氮化物半导体发光器件包括衬底，其中结合有第一导电半导体层的氮化物半导体层，发光层和第二导电半导体层，与第二导电半导体层的第一表面的至少一部分相邻的透明电极导电半导体层和与第一导电半导体层相邻的第二电极; 其中所述衬底具有第一表面，所述第一表面设置有通过在所述器件的周边部分中去除所述氮化物半导体层的第一部分而暴露的第一区域，以及通过去除所述氮化物半导体层的至少第二部分而暴露的第二区域邻近透明电极，除了器件的周边部分直到基板。一种制造该器件的方法包括去除器件周边部分中的氮化物半导体层的第一部分，直到该衬底暴露以形成其第一暴露区域，并且去除至少第二部分氮化物半导体层的连续到除了设备的周边部分之外的透明电极，直到到达基板以形成其第二暴露区域，其中通过将去除与激光组合并通过湿法蚀刻去除来采取这些步骤。

4. 发明授权

US07479663B2 Gallium nitride-based semiconductor light emitting device and process for its production 有权
标题翻译：氮化镓基半导体发光器件及其制造方法
公开(公告)号：US07479663B2
公开(公告)日：2009-01-20
申请号：US11519148
申请日：2006-09-12
申请人： Yasuhito Urashima
发明人： Yasuhito Urashima
IPC分类号： H01L27/15
CPC分类号： H01L33/405 , H01L33/32
摘要： It is an object of the present invention to inhibit exposure of Ag in Ag-employing reflective electrodes caused by microdefects generated during the manufacturing process, and to prevent reduction in light emission output and deterioration in current-voltage characteristics resulting from shorting of the light emitting device.The semiconductor light emitting device comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer in that order on a substrate, with a negative electrode and positive electrode each formed in contact with the n-type semiconductor layer and p-type semiconductor layer, respectively. The positive electrode comprises at least a contact metal layer composed of at least one type of metal selected from the group consisting of Pt, Ir, Rh, Pd, Ru and Re or their alloy in contact with the p-type semiconductor layer, a reflective layer composed of a metal or alloy containing Ag as the main component on the contact layer, and one or more protective metal layers containing no Ag, covering the top and side surfaces of the reflective layer.
摘要翻译：本发明的目的是抑制由制造过程中产生的微缺陷引起的Ag反射电极中的Ag的暴露，并且防止发光输出的减少和由发光的短路导致的电流 - 电压特性的劣化设备。半导体发光器件在衬底上依次包括n型半导体层，发光层和p型半导体层，其中负极和正极各自形成为与n型半导体层接触， p型半导体层。正极包括至少一种由选自Pt，Ir，Rh，Pd，Ru和Re中的至少一种金属或与p型半导体层接触的合金构成的接触金属层，反射由在接触层上含有Ag作为主要成分的金属或合金构成的层和覆盖反射层的顶面和侧面的不含Ag的一个以上的保护金属层。

5. 发明申请

US20070057272A1 Gallium nitride-based semiconductor light emitting device and process for its production 有权
标题翻译：氮化镓基半导体发光器件及其制造方法
公开(公告)号：US20070057272A1
公开(公告)日：2007-03-15
申请号：US11519148
申请日：2006-09-12
申请人： Yasuhito Urashima
发明人： Yasuhito Urashima
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/32
摘要： It is an object of the present invention to inhibit exposure of Ag in Ag-employing reflective electrodes caused by microdefects generated during the manufacturing process, and to prevent reduction in light emission output and deterioration in current-voltage characteristics resulting from shorting of the light emitting device. The semiconductor light emitting device comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer in that order on a substrate, with a negative electrode and positive electrode each formed in contact with the n-type semiconductor layer and p-type semiconductor layer, respectively. The positive electrode comprises at least a contact metal layer composed of at least one type of metal selected from the group consisting of Pt, Ir, Rh, Pd, Ru and Re or their alloy in contact with the p-type semiconductor layer, a reflective layer composed of a metal or alloy containing Ag as the main component on the contact layer, and one or more protective metal layers containing no Ag, covering the top and side surfaces of the reflective layer.
摘要翻译：本发明的目的是抑制由制造过程中产生的微缺陷引起的Ag反射电极中的Ag的暴露，并且防止发光输出的降低和由发光的短路引起的电流 - 电压特性的劣化设备。半导体发光器件在衬底上依次包括n型半导体层，发光层和p型半导体层，其中负极和正极各自形成为与n型半导体层接触， p型半导体层。正极包括至少一种由选自Pt，Ir，Rh，Pd，Ru和Re中的至少一种金属或与p型半导体层接触的合金构成的接触金属层，反射由在接触层上含有Ag作为主要成分的金属或合金构成的层和覆盖反射层的顶面和侧面的不含Ag的一个以上的保护金属层。

6. 发明申请

US20090170224A1 PROCESS FOR FABRICATION OF NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：氮化物半导体发光器件的制造工艺
公开(公告)号：US20090170224A1
公开(公告)日：2009-07-02
申请号：US12088076
申请日：2006-09-25
申请人： Yasuhito Urashima
发明人： Yasuhito Urashima
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0095 , H01L33/145 , H01L33/22 , H01L33/38
摘要： The present invention relates to a process for fabrication of a nitride semiconductor light emitting device comprising a substrate, a nitride semiconductor layer on the substrate and electrodes on the nitride semiconductor, the process for fabrication of a nitride semiconductor light emitting device being characterized by device working by laser, followed by etching treatment and then electrode formation.
摘要翻译：本发明涉及一种用于制造氮化物半导体发光器件的方法，其包括衬底，衬底上的氮化物半导体层和氮化物半导体上的电极，用于制造氮化物半导体发光器件的工艺，其特征在于器件工作通过激光，然后进行蚀刻处理，然后电极形成。

7. 发明申请

US20080230780A1 Group III Nitride Semiconductor Multilayer Structure 有权
标题翻译： III族氮化物半导体多层结构
公开(公告)号：US20080230780A1
公开(公告)日：2008-09-25
申请号：US10586543
申请日：2005-01-25
申请人： Yasuhito Urashima
发明人： Yasuhito Urashima
IPC分类号： H01L33/00 , H01L21/205 , H01L29/24
CPC分类号： H01L21/02458 , H01L21/0237 , H01L21/02378 , H01L21/0243 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/007
摘要： An object of the present invention is to provide a Group III nitride semiconductor multilayer structure having a smooth surface and exhibiting excellent crystallinity, which multilayer structure employs a low-cost substrate that can be easily processed. Another object is to provide a Group III nitride semiconductor light-emitting device comprising the multilayer structure.The inventive Group III nitride semiconductor multilayer structure comprises a substrate; an AlxGa1-xN (0≦x≦1) buffer layer which is provided on the substrate and has a columnar or island-like crystal structure; and an AlxInyGa1-x-yN (0≦x≦1, 0≦y≦1, 0≦x+y≦1) single-crystal layer provided on the buffer layer, wherein the substrate has, on its surface, non-periodically distributed grooves having an average depth of 0.01 to 5 μm.
摘要翻译：本发明的目的是提供一种具有光滑表面并具有优异结晶度的III族氮化物半导体多层结构，该多层结构采用易于加工的低成本基板。另一个目的是提供一种包括多层结构的III族氮化物半导体发光器件。本发明的III族氮化物半导体多层结构包括基底; 设置在基板上并具有柱状或岛状晶体结构的Al x Ga 1-x N（0 <= x <= 1）缓冲层; 和（1≤y≤1,0≤x≤1,0≤n≤1,0≤x≤1,0≤n≤1,0≤n≤0.0） <= x + y <= 1）设置在缓冲层上的单晶层，其中基板在其表面上具有平均深度为0.01至5μm的非周期性分布的凹槽。

8. 发明授权

US08173461B2 Process for fabrication of nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件的制造方法
公开(公告)号：US08173461B2
公开(公告)日：2012-05-08
申请号：US12088076
申请日：2006-09-25
申请人： Yasuhito Urashima
发明人： Yasuhito Urashima
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/007 , H01L33/0095 , H01L33/145 , H01L33/22 , H01L33/38
摘要： The present invention relates to a process for fabrication of a nitride semiconductor light emitting device comprising a substrate, a nitride semiconductor layer on the substrate and electrodes on the nitride semiconductor, the process for fabrication of a nitride semiconductor light emitting device being characterized by device working by laser, followed by etching treatment and then electrode formation.
摘要翻译：本发明涉及一种用于制造氮化物半导体发光器件的方法，其包括衬底，衬底上的氮化物半导体层和氮化物半导体上的电极，用于制造氮化物半导体发光器件的工艺，其特征在于器件工作通过激光，然后进行蚀刻处理，然后电极形成。

9. 发明授权

US07652299B2 Nitride semiconductor light-emitting device and method for fabrication thereof 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US07652299B2
公开(公告)日：2010-01-26
申请号：US11352336
申请日：2006-02-13
申请人： Yasuhito Urashima , Katsuki Kusunoki
发明人： Yasuhito Urashima , Katsuki Kusunoki
IPC分类号： H01L33/00
CPC分类号： H01L33/20
摘要： A nitride semiconductor light-emitting device includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate, wherein a normal line relative to a lateral face of the nitride semiconductor layer is not perpendicular to a normal line relative to a principal plane of the substrate. A method for the production of a nitride semiconductor light-emitting device that includes a substrate and a nitride semiconductor layer including a light-emitting layer stacked on the substrate includes the steps of covering a first surface of the nitride semiconductor layer with a mask provided with a prescribed pattern, removing the nitride semiconductor layer in regions to be divided into component devices till the substrate, subjecting the nitride semiconductor layer to wet-etching treatment and dividing the nitride semiconductor layer into the component devices.
摘要翻译：氮化物半导体发光器件包括衬底和包括堆叠在衬底上的发光层的氮化物半导体层，其中相对于氮化物半导体层的侧面的法线不垂直于法线基板的主平面。一种生产氮化物半导体发光器件的方法，该氮化物半导体发光器件包括衬底和包括堆叠在衬底上的发光层的氮化物半导体层，包括以下步骤：用设置有掩模的掩模覆盖氮化物半导体层的第一表面规定的图案，将要分割成分量器件的区域中的氮化物半导体层除去直到基板，对氮化物半导体层进行湿蚀刻处理并将氮化物半导体层分割成部件器件。

10. 发明授权

US06852161B2 METHOD OF FABRICATING GROUP-III NITRIDE SEMICONDUCTOR CRYSTAL, METHOD OF FABRICATING GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR, GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LIGHT SOURCE USING THE SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：制备III族氮化物半导体晶体的方法，制备基于氮化镓的化合物半导体的方法，基于氮化镓的化合物半导体，基于氮化镓的化合物半导体发光器件和使用半导体发光器件的光源
公开(公告)号：US06852161B2
公开(公告)日：2005-02-08
申请号：US10110692
申请日：2001-08-17
申请人： Yasuhito Urashima , Mineo Okuyama , Tetsuo Sakurai , Hisayuki Miki
发明人： Yasuhito Urashima , Mineo Okuyama , Tetsuo Sakurai , Hisayuki Miki
IPC分类号： C30B25/02 , H01L21/20 , H01L21/205 , H01L33/00
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/0237 , H01L21/0242 , H01L21/02433 , H01L21/02491 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L33/0075
摘要： A method of fabricating a film of group-III nitride semiconductor crystal includes a step of using metal material to deposit particles of a group III metal on a substrate surface in an atmosphere containing no nitrogen source, a step of nitriding the particles in an atmosphere containing a nitrogen source and no metal material, and a step of growing group-III nitride semiconductor crystal on the substrate surface on which the particles have been deposited.
摘要翻译：制备III族氮化物半导体晶体的膜的方法包括使用金属材料在不含氮源的气氛中在基板表面上沉积第III族金属的颗粒的步骤，在含有氮源且不含金属材料，以及在其上沉积有颗粒的基板表面上生长III族氮化物半导体晶体的步骤。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式