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1. 发明授权

US07459055B2 Bonding structure with buffer layer and method of forming the same 失效
标题翻译：具有缓冲层的结合结构及其形成方法
公开(公告)号：US07459055B2
公开(公告)日：2008-12-02
申请号：US11549655
申请日：2006-10-16
申请人： Su-Tsai Lu , Shu-Ming Chang , Shyh-Ming Chang , Yao-Sheng Lin , Yuan-Chang Huang
发明人： Su-Tsai Lu , Shu-Ming Chang , Shyh-Ming Chang , Yao-Sheng Lin , Yuan-Chang Huang
IPC分类号： B29C65/00 , B32B37/00 , B32B38/00 , B32B7/14 , H01L21/44 , H05K1/03 , H05K1/09 , H05K1/02 , H05K1/16 , H05K1/11 , H01R12/04
CPC分类号： H01L24/13 , H01L21/56 , H01L24/06 , H01L24/11 , H01L24/14 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L25/50 , H01L2224/0401 , H01L2224/0603 , H01L2224/06515 , H01L2224/13099 , H01L2224/131 , H01L2224/1403 , H01L2224/14515 , H01L2224/29036 , H01L2224/73103 , H01L2224/73203 , H01L2224/81193 , H01L2224/81801 , H01L2224/81894 , H01L2224/83894 , H01L2225/06513 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/14 , H01L2924/3011 , Y10T29/49126 , H01L2924/014 , H01L2924/00015 , H01L2924/00012
摘要： A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.
摘要翻译：提供具有缓冲层的接合结构及其形成方法。接合结构包括其上具有金属焊盘的第一衬底，覆盖在衬底表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。第一金属层，电极和接合层被接合以形成接合结构。可以通过表面活化或热压直接粘合。该方法使用较少的步骤并且更可靠。粘结结构所需的温度较低。接触表面之间的结合密度增加到细间距。增加接合点的质量，因为产生了接触表面之间的较少的污染物。

2. 发明授权

US07446421B2 Bonding structure with buffer layer and method of forming the same 失效
公开(公告)号：US07446421B2
公开(公告)日：2008-11-04
申请号：US11619612
申请日：2007-01-04
申请人： Su-Tsai Lu , Shu-Ming Chang , Shyh-Ming Chang , Yao-Sheng Lin , Yuan-Chang Huang
发明人： Su-Tsai Lu , Shu-Ming Chang , Shyh-Ming Chang , Yao-Sheng Lin , Yuan-Chang Huang
IPC分类号： H01L23/48 , H05K1/11
CPC分类号： B32B15/08 , B32B7/12 , B32B9/005 , B32B15/20 , B32B27/281 , B32B27/283 , B32B2457/08 , B32B2457/14 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/136 , H01L2224/16 , H01L2224/81136 , H01L2224/81193 , H01L2224/81201 , H01L2224/8123 , H01L2224/81801 , H01L2224/81894 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/09701 , H01L2924/14 , H01L2924/15787 , H01L2924/3011 , Y10T428/24917 , Y10T428/31667 , H01L2924/00014 , H01L2924/00
摘要： A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.

3. 发明授权

US07988808B2 Bonding structure with buffer layer and method of forming the same 有权
标题翻译：具有缓冲层的结合结构及其形成方法
公开(公告)号：US07988808B2
公开(公告)日：2011-08-02
申请号：US12194529
申请日：2008-08-19
申请人： Su-Tsai Lu , Shu-Ming Chang , Shyh-Ming Chang , Yao-Sheng Lin , Yuan-Chang Huang
发明人： Su-Tsai Lu , Shu-Ming Chang , Shyh-Ming Chang , Yao-Sheng Lin , Yuan-Chang Huang
IPC分类号： B29C65/00 , B32B37/00 , B32B38/00 , B32B7/14 , H01L21/44
CPC分类号： H01L24/13 , H01L21/56 , H01L24/06 , H01L24/11 , H01L24/14 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L25/50 , H01L2224/0401 , H01L2224/0603 , H01L2224/06515 , H01L2224/13099 , H01L2224/131 , H01L2224/1403 , H01L2224/14515 , H01L2224/29036 , H01L2224/73103 , H01L2224/73203 , H01L2224/81193 , H01L2224/81801 , H01L2224/81894 , H01L2224/83894 , H01L2225/06513 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/14 , H01L2924/3011 , Y10T29/49126 , H01L2924/014 , H01L2924/00015 , H01L2924/00012
摘要： A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.
摘要翻译：提供具有缓冲层的接合结构及其形成方法。接合结构包括其上具有金属焊盘的第一衬底，覆盖在衬底表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。第一金属层，电极和接合层被接合以形成接合结构。可以通过表面活化或热压直接粘合。该方法使用较少的步骤并且更可靠。粘结结构所需的温度较低。接触表面之间的结合密度增加到细间距。增加接合点的质量，因为产生了接触表面之间的较少的污染物。

4. 发明申请

US20080305624A1 Bonding Structure With Buffer Layer And Method Of Forming The Same 有权
标题翻译：具有缓冲层的结合结构及其形成方法
公开(公告)号：US20080305624A1
公开(公告)日：2008-12-11
申请号：US12194529
申请日：2008-08-19
申请人： Su-Tsai Lu , Shu-Ming Chang , Shyh-Ming Chang , Yao-Sheng Lin , Yuan-Chang Huang
发明人： Su-Tsai Lu , Shu-Ming Chang , Shyh-Ming Chang , Yao-Sheng Lin , Yuan-Chang Huang
IPC分类号： H01L21/44
CPC分类号： H01L24/13 , H01L21/56 , H01L24/06 , H01L24/11 , H01L24/14 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/81 , H01L24/83 , H01L25/50 , H01L2224/0401 , H01L2224/0603 , H01L2224/06515 , H01L2224/13099 , H01L2224/131 , H01L2224/1403 , H01L2224/14515 , H01L2224/29036 , H01L2224/73103 , H01L2224/73203 , H01L2224/81193 , H01L2224/81801 , H01L2224/81894 , H01L2224/83894 , H01L2225/06513 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/14 , H01L2924/3011 , Y10T29/49126 , H01L2924/014 , H01L2924/00015 , H01L2924/00012
摘要： A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.
摘要翻译：提供具有缓冲层的接合结构及其形成方法。接合结构包括其上具有金属焊盘的第一衬底，覆盖在衬底表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。第一金属层，电极和接合层被接合以形成接合结构。可以通过表面活化或热压直接粘合。该方法使用较少的步骤并且更可靠。粘结结构所需的温度较低。接触表面之间的结合密度增加到细间距。增加接合点的质量，因为产生了接触表面之间的较少的污染物。

5. 发明申请

US20070122635A1 Bonding Structure With Buffer Layer And Method Of Forming The Same 失效
标题翻译：具有缓冲层的结合结构及其形成方法
公开(公告)号：US20070122635A1
公开(公告)日：2007-05-31
申请号：US11619612
申请日：2007-01-04
申请人： Su-Tsai Lu , Shu-Ming Chang , Shyh-Ming Chang , Yao-Sheng Lin , Yuan-Chang Huang
发明人： Su-Tsai Lu , Shu-Ming Chang , Shyh-Ming Chang , Yao-Sheng Lin , Yuan-Chang Huang
IPC分类号： B32B13/04
CPC分类号： B32B15/08 , B32B7/12 , B32B9/005 , B32B15/20 , B32B27/281 , B32B27/283 , B32B2457/08 , B32B2457/14 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/136 , H01L2224/16 , H01L2224/81136 , H01L2224/81193 , H01L2224/81201 , H01L2224/8123 , H01L2224/81801 , H01L2224/81894 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/09701 , H01L2924/14 , H01L2924/15787 , H01L2924/3011 , Y10T428/24917 , Y10T428/31667 , H01L2924/00014 , H01L2924/00
摘要： A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.
摘要翻译：提供具有缓冲层的接合结构及其形成方法。接合结构包括其上具有金属焊盘的第一衬底，覆盖在衬底表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。第一金属层，电极和接合层被接合以形成接合结构。可以通过表面活化或热压直接粘合。该方法使用较少的步骤并且更可靠。粘结结构所需的温度较低。接触表面之间的结合密度增加到细间距。增加接合点的质量，因为产生了接触表面之间的较少的污染物。

6. 发明申请

US20060157869A1 Semiconductor substrate with conductive bumps having a stress relief buffer layer formed of an electrically insulating organic material 审中-公开
标题翻译：具有导电凸块的半导体衬底具有由电绝缘的有机材料形成的应力消除缓冲层
公开(公告)号：US20060157869A1
公开(公告)日：2006-07-20
申请号：US11347942
申请日：2006-02-06
申请人： Yuan-Chang Huang , Yao-Sheng Lin
发明人： Yuan-Chang Huang , Yao-Sheng Lin
IPC分类号： H01L23/48
CPC分类号： H01L24/13 , H01L23/48 , H01L23/485 , H01L24/11 , H01L24/29 , H01L24/83 , H01L2224/05001 , H01L2224/05022 , H01L2224/0557 , H01L2224/05571 , H01L2224/13099 , H01L2224/13111 , H01L2224/13124 , H01L2224/13139 , H01L2224/13144 , H01L2224/13147 , H01L2224/13164 , H01L2224/13169 , H01L2224/83192 , H01L2224/838 , H01L2924/0001 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/0781 , H01L2924/14 , H01L2224/05599 , H01L2224/05099
摘要： A microelectronic structure is provided having a semi-conducting substrate comprising circuits therein and a top surface, and at least one first conductive bump situated on the top surface. The conductive bump provides electrical communication to the circuits. The at least one conductive bump has a stress relief buffer layer formed of an electrically insulating organic material. The portions of the at least one conductive bump other than the stress relief buffer layer are a unitary structure. The top surface of the conductive bump is uncovered and directly exposed to its surroundings.
摘要翻译：提供了一种微电子结构，其具有包括其中的电路的半导体衬底和顶表面，以及位于顶表面上的至少一个第一导电凸块。导电凸块提供与电路的电连通。所述至少一个导电凸块具有由电绝缘的有机材料形成的应力消除缓冲层。所述至少一个导电凸块的除应力消除缓冲层以外的部分是整体结构。导电凸块的顶表面未被覆盖并且直接暴露在其周围。

7. 发明申请

US20060030079A1 Wafer level package structure of optical-electronic device and method for making the same 失效
标题翻译：光电子器件的晶圆级封装结构及其制造方法
公开(公告)号：US20060030079A1
公开(公告)日：2006-02-09
申请号：US11082899
申请日：2005-03-18
申请人： Yuan-Chang Huang , Tai-Hung Chen , Yao-Sheng Lin , Su-Tsai Lu
发明人： Yuan-Chang Huang , Tai-Hung Chen , Yao-Sheng Lin , Su-Tsai Lu
IPC分类号： H01L21/44
CPC分类号： H01L27/14683 , H01L27/14618 , H01L27/14687 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/13 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A wafer level package structure of optical-electronic device and method for making the same are disclosed. The wafer level package structure of optical-electronic device is provided by employing a substrate whose surfaces have several optical sensitive areas and divided into individual package devices. The manufacture steps first involve providing a substrate with several chips whose surfaces have an optical sensitive area and bonding pads, and providing transparent layer whose surfaces have conductive circuits and scribe lines. Then the bonding pads bond to conductive circuits and a protection layer is formed on the chip to expose partly conductive circuits. Forming a conductive film on the protection layer and the conductive film contacts with the extending conductive circuits to form the wafer level package structure of optical-electronic device. At last, the transparent layer is diced according to scribe lines to form the individual package devices.
摘要翻译：公开了一种光电子器件的晶片级封装结构及其制造方法。光电子器件的晶片级封装结构通过采用其表面具有多个光敏区域并分成单个封装器件的衬底来提供。制造步骤首先涉及提供具有表面具有光敏区域和接合焊盘的几个芯片的基板，并且提供其表面具有导电电路和划线的透明层。然后，接合焊盘接合到导电电路，并且在芯片上形成保护层以暴露部分导电电路。在保护层上形成导电膜，并且导电膜与延伸的导电电路接触以形成光电子器件的晶片级封装结构。最后，根据划线对透明层进行切割，形成单独的封装装置。

8. 发明申请

US20050045478A1 Manufacturing method for an electrophoretic display 审中-公开
标题翻译：电泳显示器的制造方法
公开(公告)号：US20050045478A1
公开(公告)日：2005-03-03
申请号：US10673270
申请日：2003-09-30
申请人： Chi-Chang Liao , Kang-Hung Liu , Lung-Pin Hsin , Yi-Chun Wong , Yi-An Sha , Ching-Hsiang Chan , Chia-Rong Sheu , Chung-Wen Wu , Yao-Sheng Lin
发明人： Chi-Chang Liao , Kang-Hung Liu , Lung-Pin Hsin , Yi-Chun Wong , Yi-An Sha , Ching-Hsiang Chan , Chia-Rong Sheu , Chung-Wen Wu , Yao-Sheng Lin
IPC分类号： G02F1/167 , B05D5/12 , B05D5/06 , G01L1/20
CPC分类号： G02F1/167
摘要： a manufacturing method for an electrophoretic display applying optical polymer material is provided. The main characteristic is that the charged pigment particles are confined with optical polymer material so as to achieve electrophoretic display. In the manufacturing process, a first layer of optical polymer material is coated on an auxiliary substrate having a buffer layer for performing an optical polymerization manufacturing process. After the polymerization, on the first layer of the optical polymer material layer, the manufacturing process required by the electrophoretic display is further performed. After a second layer of optical polymer material is coated on a substrate required by the electrophoretic display having a plurality of electrode patterns, by using a mask exposure, the optical polymer material is solidified to form a polymer wall, or a molding method is applied with ultraviolet irradiation for solidifying the optical polymer material so as to form the polymer wall. Next, in a hole formed by the polymer wall, the mixture formed by the charged pigment particles and a few amount of optical polymer material is filled, and the auxiliary substrate is aligned with the substrate so as to perform the mask exposure polymerization manufacturing process. Therefore, the auxiliary substrate is combined with the substrate. Finally, the auxiliary substrate is stripped out so as to finish the manufacturing of a single substrate electrophoretic display.
摘要翻译：提供了应用光学聚合物材料的电泳显示器的制造方法。其主要特征是带电颜料颗粒被限制在光学聚合物材料上，从而实现电泳显示。在制造过程中，将第一层光学聚合物材料涂覆在具有用于进行光学聚合制造工艺的缓冲层的辅助基板上。聚合后，在光学聚合物材料层的第一层上进一步进行电泳显示所需的制造过程。在通过使用掩模曝光将第二层光学聚合物材料涂覆在具有多个电极图案的电泳显示器所需的基板上之后，将光学聚合物材料固化以形成聚合物壁，或者使用模制方法用于固化光学聚合物材料的紫外线照射以形成聚合物壁。接下来，在由聚合物壁形成的孔中填充由带电颜料颗粒和少量光学聚合物材料形成的混合物，并将辅助基板与基板对准以进行掩模曝光聚合制造工艺。因此，辅助基板与基板结合。最后，将辅助基板剥离以完成单个基板电泳显示器的制造。

9. 发明申请

US20100283159A1 Circuit Substrate and Method for Utilizing Packaging of the Circuit Substrate 有权
标题翻译：电路基板和利用电路基板封装的方法
公开(公告)号：US20100283159A1
公开(公告)日：2010-11-11
申请号：US12843251
申请日：2010-07-26
申请人： Yao-Sheng LIN , Tai-Hong CHEN
发明人： Yao-Sheng LIN , Tai-Hong CHEN
IPC分类号： H01L23/48 , H01L21/50
CPC分类号： H05K3/361 , G02F1/13452 , H01L23/49838 , H01L23/4985 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/81 , H01L24/83 , H01L24/98 , H01L2224/0401 , H01L2224/05599 , H01L2224/13016 , H01L2224/2929 , H01L2224/293 , H01L2224/81136 , H01L2224/81801 , H01L2224/81903 , H01L2224/83101 , H01L2224/83136 , H01L2224/838 , H01L2224/83851 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/0781 , H01L2924/12044 , H01L2924/15788 , H01L2924/351 , H05K1/111 , H05K3/225 , H05K3/323 , H05K3/4092 , H05K2201/09427 , H05K2201/09663 , H05K2203/175 , H01L2924/00
摘要： A circuit substrate and the method for fabricating a packaging of the circuit substrate are provided. A plurality of electrodes are formed on the surface of the circuit substrate, the electrodes are formed with fork structures over an connection section of the circuit substrate, so that when the circuit substrate expands/contracts due to thermal processes, the probability of alignment with electrodes of an external circuit board is increased by easily detaching the fork structure overlapping an electrode of the external circuit board which is not corresponding to the fork structure of the electrode of the circuit substrate, so as to avoid short circuit. Thus, electrode misalignment due to electrode pitch variation of the traditional circuit substrate as a result of thermal deformation can be effectively eliminated.
摘要翻译：提供电路基板和制造电路基板的封装的方法。多个电极形成在电路基板的表面上，电极在电路基板的连接部分上形成有叉结构，使得当电路基板由于热处理而膨胀/收缩时，与电极对准的概率通过容易地分离与外部电路板的与电路基板的电极的叉结构不相对应的电极重叠的叉结构来增加外部电路板，以避免短路。因此，可以有效地消除由于热变形导致的传统电路基板的电极间距变化引起的电极未对准。

10. 发明授权

US07465603B2 Wafer level package structure of optical-electronic device and method for making the same 失效
公开(公告)号：US07465603B2
公开(公告)日：2008-12-16
申请号：US11984014
申请日：2007-11-13
申请人： Yuan-Chang Huang , Tai-Hung Chen , Yao-Sheng Lin , Su-Tsai Lu
发明人： Yuan-Chang Huang , Tai-Hung Chen , Yao-Sheng Lin , Su-Tsai Lu
IPC分类号： H01L21/00
CPC分类号： H01L27/14683 , H01L27/14618 , H01L27/14687 , H01L2224/0554 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/13 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： A wafer level package structure of optical-electronic device and method for making the same are disclosed. The wafer level package structure of optical-electronic device is provided by employing a substrate whose surfaces have several optical sensitive areas and divided into individual package devices. The manufacture steps first involve providing a substrate with several chips whose surfaces have an optical sensitive area and bonding pads, and providing transparent layer whose surfaces have conductive circuits and scribe lines. Then the bonding pads bond to conductive circuits and a protection layer is formed on the chip to expose partly conductive circuits. Forming a conductive film on the protection layer and the conductive film contacts with the extending conductive circuits to form the wafer level package structure of optical-electronic device. At last, the transparent layer is diced according to scribe lines to form the individual package devices.

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