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1. 发明授权

US06379574B1 Integrated post-etch treatment for a dielectric etch process 失效
标题翻译：用于电介质蚀刻工艺的集成后蚀刻处理
公开(公告)号：US06379574B1
公开(公告)日：2002-04-30
申请号：US09320251
申请日：1999-05-26
申请人： Hui Ou-Yang , Chih-Ping Yang , Lin Ye , Robert W. Wu , Chih-Pang Chen , You-Neng Cheng , Yang Chan-Lon , Tong-Yu Chen
发明人： Hui Ou-Yang , Chih-Ping Yang , Lin Ye , Robert W. Wu , Chih-Pang Chen , You-Neng Cheng , Yang Chan-Lon , Tong-Yu Chen
IPC分类号： B44C122
CPC分类号： H01L21/02063 , H01L21/31116
摘要： The present disclosure pertains to an integrated post-etch treatment method which is performed after a dielectric etch process. Using the method of the invention, byproducts formed on the sidewalls of contact vias during the dielectric etch process can be removed efficiently. The method of the invention also reduces or eliminates the problem of polymer accumulation on process chamber surfaces. An overlying photoresist layer and anti-reflection layer are removed during the performance of the post-etch treatment method. Typically, after the etch of a dielectric material to define pattern or interconnect filling spaces, a series of post-etch treatment steps is performed to remove residues remaining on the wafer after the dielectric etch process. According to the method of the present invention, a post-etch treatment method including one or more steps is performed after the dielectric etch process, preferably within the same processing chamber in which the dielectric etch process was performed. The post-etch treatment method comprises exposing a semiconductor structure to a plasma generated from a source gas comprising oxygen, a nitrogen-comprising gas, and a reactive gas comprising hydrogen, carbon, and fluorine. Two optional steps, a flushing step prior to the post-etch treatment and a cleaning step subsequent to the post-etch treatment, can be performed for the purpose of enhancing the fluorine and byproduct removal and post-etch chamber cleaning.
摘要翻译：本公开涉及在电介质蚀刻工艺之后执行的集成后蚀刻处理方法。使用本发明的方法，可以有效地去除在电介质蚀刻工艺期间在接触通孔的侧壁上形成的副产物。本发明的方法还减少或消除了聚合物在处理室表面上积聚的问题。在蚀刻后处理方法的执行期间，去除覆盖的光致抗蚀剂层和抗反射层。通常，在蚀刻电介质材料以限定图案或互连填充空间之后，执行一系列后蚀刻处理步骤以在电介质蚀刻工艺之后去除残留在晶片上的残留物。根据本发明的方法，在电介质蚀刻工艺之后，优选在进行电介质蚀刻工艺的相同处理室内执行包括一个或多个步骤的后蚀刻处理方法。蚀刻后处理方法包括将半导体结构暴露于由包含氧，含氮气体和包含氢，碳和氟的反应性气体的源气体产生的等离子体。可以执行两个可选步骤，即在蚀刻后处理之前的冲洗步骤和在蚀刻后处理之后的清洁步骤，以便增强氟和副产物去除以及蚀刻后清洁。

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