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1. 发明申请

US20140302635A1 N-DOPING OF ORGANIC SEMICONDUCTORS BY BIS-METALLOSANDWICH COMPOUNDS 有权
标题翻译：有机半导体通过双金属化合物进行N掺杂
公开(公告)号：US20140302635A1
公开(公告)日：2014-10-09
申请号：US14126319
申请日：2012-06-13
申请人： Stephen Barlow , Yabing Qi , Antoine Kahn , Seth Marder , Sang Bok Kim , Swagat K. Mohapatra , Song Guo
发明人： Stephen Barlow , Yabing Qi , Antoine Kahn , Seth Marder , Sang Bok Kim , Swagat K. Mohapatra , Song Guo
IPC分类号： H01L51/00
CPC分类号： H01L51/009 , H01L51/0002 , H01L51/002 , H01L51/0083 , H01L51/0084 , H01L51/0085 , H01L51/0086 , Y02E10/549
摘要： The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.
摘要翻译：本文公开，描述和/或要求保护的各种发明涉及具有某些双 - 金属离子化合物的n掺杂有机半导体的方法领域，产生的掺杂组合物以及掺杂组合物在有机电子器件中的用途。金属可以是锰，铼，铁，钌，锇，铑或铱。可以实现稳定高效的掺杂。

2. 发明授权

US09231219B2 N-doping of organic semiconductors by bis-metallosandwich compounds 有权
标题翻译：双金属化合物对有机半导体的N掺杂
公开(公告)号：US09231219B2
公开(公告)日：2016-01-05
申请号：US14126319
申请日：2012-06-13
申请人： Stephen Barlow , Yabing Qi , Antoine Kahn , Seth Marder , Sang Bok Kim , Swagat K. Mohapatra , Song Guo
发明人： Stephen Barlow , Yabing Qi , Antoine Kahn , Seth Marder , Sang Bok Kim , Swagat K. Mohapatra , Song Guo
IPC分类号： H01L51/40 , H01L51/00
CPC分类号： H01L51/009 , H01L51/0002 , H01L51/002 , H01L51/0083 , H01L51/0084 , H01L51/0085 , H01L51/0086 , Y02E10/549
摘要： The various inventions disclosed, described, and/or claimed herein relate to the field of methods for n-doping organic semiconductors with certain bis-metallosandwich compounds, the doped compositions produced, and the uses of the doped compositions in organic electronic devices. Metals can be manganese, rhenium, iron, ruthenium, osmium, rhodium, or iridium. Stable and efficient doping can be achieved.
摘要翻译：本文公开，描述和/或要求保护的各种发明涉及具有某些双金属化合物的n掺杂有机半导体的方法领域，所产生的掺杂组合物以及掺杂组合物在有机电子器件中的用途。金属可以是锰，铼，铁，钌，锇，铑或铱。可以实现稳定高效的掺杂。

3. 发明申请

US20110266529A1 Remote doping of organic thin film transistors 审中-公开
标题翻译：有机薄膜晶体管的远程掺杂
公开(公告)号：US20110266529A1
公开(公告)日：2011-11-03
申请号：US13094608
申请日：2011-04-26
申请人： Wei ZHAO , Yabing QI , Antoine KAHN , Seth MARDER , Stephen BARLOW
发明人： Wei ZHAO , Yabing QI , Antoine KAHN , Seth MARDER , Stephen BARLOW
IPC分类号： H01L51/30
CPC分类号： H01L51/0067 , B82Y10/00 , H01L51/002 , H01L51/0036 , H01L51/0043 , H01L51/0046 , H01L51/0053 , H01L51/0072 , H01L51/0084 , H01L51/0085 , H01L51/0094 , H01L51/0541 , H01L51/0545 , H01L51/0558 , H01L51/0562
摘要： Organic electronic devices comprising “remotely” doped materials comprising a combination of at least three layers. Such devices can include “remotely p-doped” structures comprising: a channel layer comprising at least one organic semiconductor channel material; a dopant layer, which comprises at least one p-dopant material and optionally at least one organic hole transport material; and a spacer layer disposed between and in electrical contact with both the channel layer and the dopant layer, comprising an organic semiconducting spacer material; or alternatively can include “remotely n-doped” structures comprising a combination of at least three layers: a channel layer comprising at least one organic semiconductor channel material; a dopant layer which comprises at least one organic electron transport material doped with an n-dopant material; and a spacer layer disposed between and in electrical contact with the channel layer and the dopant layer, comprising an organic semiconducting spacer material. Such devices include “remotely doped” field effect transistors comprising the doped structures described above.
摘要翻译：包含“远程”掺杂材料的有机电子器件包括至少三层的组合。这样的器件可以包括“远程p掺杂”结构，包括：包含至少一个有机半导体沟道材料的沟道层; 掺杂剂层，其包含至少一种p-掺杂剂材料和任选的至少一种有机空穴传输材料; 以及设置在所述沟道层和所述掺杂剂层之间并与之电接触的间隔层，包括有机半导体间隔物材料; 或者可以包括包括至少三层的组合的“远程n掺杂”结构：包含至少一个有机半导体沟道材料的沟道层; 掺杂剂层，其包含掺杂有n-掺杂剂材料的至少一种有机电子传输材料; 以及间隔层，其设置在所述沟道层和所述掺杂剂层之间并与之电接触，所述间隔层包括有机半导体间隔物材料。这样的器件包括包含上述掺杂结构的“远程掺杂”场效应晶体管。

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