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    • 2. 发明授权
    • Solid-state disconnect device
    • 固态断开装置
    • US08004806B2
    • 2011-08-23
    • US12434880
    • 2009-05-04
    • Xueqing Li
    • Xueqing Li
    • H02H9/00H02H3/08H02H9/02H02H9/08
    • H02H3/087H02H3/06H02H9/025
    • A solid-state disconnect device capable of isolating and protecting circuits and equipment from overloads and undesired transients is presented. The protection device includes at least one depletion mode circuit block having three terminals (drain, gate, and source), which in its simplest form is implemented by a single n-channel depletion mode field-effect transistor, and two enhancement mode circuit blocks each having three terminals (drain, gate and source), each implemented in simplest form by a single n-channel enhancement mode field-effect transistor. The current conducting path of the first enhancement mode circuit block is connected in series with the current conducting path of the depletion mode circuit block. The drain terminal of the second enhancement mode circuit block is connected through a current limiting load to both the gate terminal of the second enhancement mode circuit block and the drain terminal of the first enhancement mode circuit block. The gate terminal of the first enhancement mode circuit block is connected to the drain terminal of the second enhancement mode circuit block. The source terminals of the two enhancement circuit blocks are both connected to the gate terminal of the depletion mode circuit block. Unidirectional and bidirectional embodiments are disclosed.
    • 提出了能够隔离和保护电路和设备免受过载和不期望的瞬变的固态断开装置。 保护装置包括至少一个具有三个端子(漏极,栅极和源极)的耗尽型电路块,其最简单的形式由单个n沟道耗尽型场效应晶体管实现,并且每个具有两个增强模式电路块 具有三个端子(漏极,栅极和源极),每个端子由单个n沟道增强模式场效应晶体管以最简单的形式实现。 第一增强型电路块的电流传导路径与耗尽型电路块的电流传导路径串联连接。 第二增强模式电路块的漏极端子通过限流负载连接到第二增强模式电路块的栅极端子和第一增强模式电路块的漏极端子。 第一增强模式电路块的栅极端子连接到第二增强模式电路块的漏极端子。 两个增强电路块的源极端子都连接到耗尽型电路块的栅极端子。 公开了单向和双向实施例。
    • 6. 发明申请
    • Solid-State Disconnect Device
    • 固态断开设备
    • US20100277847A1
    • 2010-11-04
    • US12434880
    • 2009-05-04
    • Xueqing Li
    • Xueqing Li
    • H02H3/02
    • H02H3/087H02H3/06H02H9/025
    • A solid-state disconnect device capable of isolating and protecting circuits and equipment from overloads and undesired transients is presented. The protection device includes at least one depletion mode circuit block having three terminals (drain, gate, and source), which in its simplest form is implemented by a single n-channel depletion mode field-effect transistor, and two enhancement mode circuit blocks each having three terminals (drain, gate and source), each implemented in simplest form by a single n-channel enhancement mode field-effect transistor. The current conducting path of the first enhancement mode circuit block is connected in series with the current conducting path of the depletion mode circuit block. The drain terminal of the second enhancement mode circuit block is connected through a current limiting load to both the gate terminal of the second enhancement mode circuit block and the drain terminal of the first enhancement mode circuit block. The gate terminal of the first enhancement mode circuit block is connected to the drain terminal of the second enhancement mode circuit block. The source terminals of the two enhancement circuit blocks are both connected to the gate terminal of the depletion mode circuit block. Unidirectional and bidirectional embodiments are disclosed.
    • 提出了能够隔离和保护电路和设备免受过载和不期望的瞬变的固态断开装置。 保护装置包括至少一个具有三个端子(漏极,栅极和源极)的耗尽型电路块,其最简单的形式由单个n沟道耗尽型场效应晶体管实现,并且每个具有两个增强模式电路块 具有三个端子(漏极,栅极和源极),每个端子由单个n沟道增强模式场效应晶体管以最简单的形式实现。 第一增强型电路块的电流传导路径与耗尽型电路块的电流传导路径串联连接。 第二增强模式电路块的漏极端子通过限流负载连接到第二增强模式电路块的栅极端子和第一增强模式电路块的漏极端子。 第一增强模式电路块的栅极端子连接到第二增强模式电路块的漏极端子。 两个增强电路块的源极端子都连接到耗尽型电路块的栅极端子。 公开了单向和双向实施例。