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1. 发明授权

US08063451B2 Self-aligned nano field-effect transistor and its fabrication 有权
标题翻译：自对准纳米场效应晶体管及其制造
公开(公告)号：US08063451B2
公开(公告)日：2011-11-22
申请号：US12571453
申请日：2009-10-01
申请人： Zhiyong Zhang , Lianmao Peng , Sheng Wang , Xuelei Liang , Qing Chen
发明人： Zhiyong Zhang , Lianmao Peng , Sheng Wang , Xuelei Liang , Qing Chen
IPC分类号： H01L29/72
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L51/0048 , H01L51/0541 , Y10S977/938
摘要： Our invention discloses a self-aligned-gate structure for nano FET and its fabrication method. One dimension semiconductor material is used as conductive channel, whose two terminals are source and drain electrodes. Gate dielectric grown by ALD covers the area between source electrode and drain electrode, opposite sidewalls of source electrode and drain electrode, and part of upper source electrode and drain electrode. Gate electrode is deposited on gate dielectric by evaporation or sputtering. Total thickness of gate dielectric and electrode must less than source electrode or drain electrode. Gate electrode between source electrode and drain electrode is electrically separated from source and drain electrode by gate dielectric. The fabrication process of this self-aligned structure is simple, stable, and has high degree of freedom. Nearly the whole conductive channel between source electrode and drain electrode is covered by gate electrode, so the control efficiency of the gate over the conductive channel, described as transconductance, can be greatly enhanced. Additionally, there is no restriction on material of gate dielectric or electrode, so the devices' threshold voltage can be adjusted to satisfy the requirements of large scale integrated circuit.
摘要翻译：我们的发明公开了一种用于纳米FET的自对准栅极结构及其制造方法。一维半导体材料用作导电通道，其两个端子是源极和漏极。由ALD生长的栅极电介质覆盖源极和漏极之间的区域，源极和漏极的相对侧壁以及上部源极和漏极的一部分。栅电极通过蒸发或溅射沉积在栅极电介质上。栅极电介质和电极的总厚度必须小于源电极或漏电极。源电极和漏电极之间的栅极电极通过栅极电介质与源极和漏极电气分离。该自对准结构的制造工艺简单，稳定，具有高自由度。源电极和漏电极之间的几乎整个导电通道被栅电极覆盖，因此可以大大提高导电沟道上栅极的控制效率，如跨导。另外，对栅极电介质或电极的材料没有限制，因此可以调节器件的阈值电压以满足大规模集成电路的要求。

2. 发明授权

US08120008B2 Carbon-nanotube based opto-electric device 有权
标题翻译：基于碳纳米管的光电器件
公开(公告)号：US08120008B2
公开(公告)日：2012-02-21
申请号：US12422074
申请日：2009-04-10
申请人： Lianmao Peng , Xuelei Liang , Zhiyong Zhang , Sheng Wang , Qing Chen
发明人： Lianmao Peng , Xuelei Liang , Zhiyong Zhang , Sheng Wang , Qing Chen
IPC分类号： H01L29/06
CPC分类号： H01L27/15 , B82Y10/00 , H01L33/34 , H01L51/0048 , H01L51/0545 , H01L51/105
摘要： A carbon nano-tube based photoelectric device includes a substrate and a carbon nanotube (CNT) over the substrate. The CNT comprises a first end and a second end, wherein the CNT has a CNT work function. A high work-function electrode over the substrate is in electric contact with the first end of the CNT. The high work-function electrode has a first work function higher than the CNT work function. A low work-function electrode over the substrate is in electric contact with the second end of the CNT. The low work-function electrode has a second work function lower than the CNT work function. The CNT can form a conductive channel between the high work-function electrode and the low work-function electrode. The carbon nano-tube based photoelectric device also includes a dielectric material is in contact with a side surface of the CNT and a conductive material in contact with the dielectric material.
摘要翻译：基于碳纳米管的光电装置包括在基板上的基板和碳纳米管（CNT）。 CNT包括第一端和第二端，其中CNT具有CNT功能。衬底上的高功函电极与CNT的第一端电接触。高功函电极具有高于CNT功能的第一功函数。衬底上的低功函电极与CNT的第二端电接触。低功函电极具有低于CNT功能的第二功能。 CNT可以在高功函电极和低功函电极之间形成导电沟道。基于碳纳米管的光电装置还包括与CNT的侧表面接触的电介质材料和与电介质材料接触的导电材料。

3. 发明申请

US20100090293A1 SELF-ALIGNED NANO FIELD-EFFECT TRANSISTOR AND ITS FABRICATION 有权
标题翻译：自对准纳米场效应晶体管及其制造
公开(公告)号：US20100090293A1
公开(公告)日：2010-04-15
申请号：US12571453
申请日：2009-10-01
申请人： Zhiyong ZHANG , Lianmao PENG , Sheng WANG , Xuelei LIANG , Qing CHEN
发明人： Zhiyong ZHANG , Lianmao PENG , Sheng WANG , Xuelei LIANG , Qing CHEN
IPC分类号： H01L29/775 , H01L21/04
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L51/0048 , H01L51/0541 , Y10S977/938
摘要： Our invention discloses a self-aligned-gate structure for nano FET and its fabrication method. One dimension semiconductor material is used as conductive channel, whose two terminals are source and drain electrodes. Gate dielectric grown by ALD covers the area between source electrode and drain electrode, opposite sidewalls of source electrode and drain electrode, and part of upper source electrode and drain electrode. Gate electrode is deposited on gate dielectric by evaporation or sputtering. Total thickness of gate dielectric and electrode must less than source electrode or drain electrode. Gate electrode between source electrode and drain electrode is electrically separated from source and drain electrode by gate dielectric. The fabrication process of this self-aligned structure is simple, stable, and has high degree of freedom. Nearly the whole conductive channel between source electrode and drain electrode is covered by gate electrode, so the control efficiency of the gate over the conductive channel, described as transconductance, can be greatly enhanced. Additionally, there is no restriction on material of gate dielectric or electrode, so the devices' threshold voltage can be adjusted to satisfy the requirements of large scale integrated circuit.
摘要翻译：我们的发明公开了一种用于纳米FET的自对准栅极结构及其制造方法。一维半导体材料用作导电通道，其两个端子是源极和漏极。由ALD生长的栅极电介质覆盖源极和漏极之间的区域，源极和漏极的相对侧壁以及上部源极和漏极的一部分。栅电极通过蒸发或溅射沉积在栅极电介质上。栅极电介质和电极的总厚度必须小于源电极或漏电极。源电极和漏电极之间的栅极电极通过栅极电介质与源极和漏极电气分离。该自对准结构的制造工艺简单，稳定，具有高自由度。源电极和漏电极之间的几乎整个导电通道被栅电极覆盖，因此可以大大提高导电沟道上栅极的控制效率，如跨导。另外，对栅极电介质或电极的材料没有限制，因此可以调节器件的阈值电压以满足大规模集成电路的要求。

4. 发明申请

US20090267053A1 CARBON-NANOTUBE BASED OPTO-ELECTRIC DEVICE 有权
标题翻译：基于碳纳米管的光电设备
公开(公告)号：US20090267053A1
公开(公告)日：2009-10-29
申请号：US12422074
申请日：2009-04-10
申请人： Lianmao Peng , Xuelei Liang , Zhiyong Zhang , Sheng Wang , Qing Chen
发明人： Lianmao Peng , Xuelei Liang , Zhiyong Zhang , Sheng Wang , Qing Chen
IPC分类号： H01L29/66
CPC分类号： H01L27/15 , B82Y10/00 , H01L33/34 , H01L51/0048 , H01L51/0545 , H01L51/105
摘要： A carbon nano-tube based photoelectric device includes a substrate and a carbon nanotube (CNT) over the substrate. The CNT comprises a first end and a second end, wherein the CNT has a CNT work function. A high work-function electrode over the substrate is in electric contact with the first end of the CNT. The high work-function electrode has a first work function higher than the CNT work function. A low work-function electrode over the substrate is in electric contact with the second end of the CNT. The low work-function electrode has a second work function lower than the CNT work function. The CNT can form a conductive channel between the high work-function electrode and the low work-function electrode. The carbon nano-tube based photoelectric device also includes a dielectric material is in contact with a side surface of the CNT and a conductive material in contact with the dielectric material.
摘要翻译：基于碳纳米管的光电装置包括在基板上的基板和碳纳米管（CNT）。 CNT包括第一端和第二端，其中CNT具有CNT功能。衬底上的高功函电极与CNT的第一端电接触。高功函电极具有高于CNT功能的第一功函数。衬底上的低功函电极与CNT的第二端电接触。低功函电极具有低于CNT功能的第二功能。 CNT可以在高功函电极和低功函电极之间形成导电沟道。基于碳纳米管的光电装置还包括与CNT的侧表面接触的电介质材料和与电介质材料接触的导电材料。

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