专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

2. 发明授权

US09595685B2 Nanoscale wires, nanoscale wire FET devices, and nanotube-electronic hybrid devices for sensing and other applications 有权
标题翻译：纳米线，纳米级线FET器件，以及用于感应和其他应用的纳米管 - 电子混合器件
公开(公告)号：US09595685B2
公开(公告)日：2017-03-14
申请号：US14124816
申请日：2012-06-07
申请人： Charles M. Lieber , Xiaojie Duan , Ruixuan Gao , Ping Xie , Xiaocheng Jiang
发明人： Charles M. Lieber , Xiaojie Duan , Ruixuan Gao , Ping Xie , Xiaocheng Jiang
IPC分类号： G01R1/02 , H01L51/05 , H01L51/00 , G01N27/414 , B82Y40/00 , B82Y30/00 , B82Y10/00 , H01L29/775 , H01L29/06
CPC分类号： H01L51/0512 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G01N27/4146 , G01R1/02 , H01L29/0676 , H01L29/775 , H01L51/0002
摘要： The present invention generally relates to nanotechnology, including field effect transistors and other devices used as sensors (for example, for electrophysiological studies), nanotube structures, and applications. Certain aspects of the present invention are generally directed to transistors such as field effect transistors, and other similar devices. In one set of embodiments, a field effect transistor is used where a nanoscale wire, for example, a silicon nanowire, acts as a transistor channel connecting a source electrode to a drain electrode. In some cases, a portion of the transistor channel is exposed to an environment that is to be determined, for example, the interior or cytosol of a cell. A nanotube or other suitable fluidic channel may be extended from the transistor channel into a suitable environment, such as a contained environment within a cell, so that the environment is in electrical communication with the transistor channel via the fluidic channel. In some embodiments, the rest of the transistor channel may be coated, e.g., so that the electrical properties of the transistor channel reflect the electrical behavior of the environment that the fluidic channel is in communication with. Other aspects of the invention are generally directed to methods of making such sensors, methods of using such sensors, kits involving such sensors, or the like.
摘要翻译：本发明一般涉及纳米技术，包括场效应晶体管和用作传感器（例如，用于电生理研究），纳米管结构和应用的其它器件。本发明的某些方面通常涉及诸如场效应晶体管和其它类似装置的晶体管。在一组实施例中，使用场效应晶体管，其中纳米线例如硅纳米线用作将源电极连接到漏电极的晶体管沟道。在一些情况下，晶体管沟道的一部分暴露于要被确定的环境，例如，单元的内部或胞质溶胶。纳米管或其它合适的流体通道可以从晶体管通道延伸到合适的环境中，例如电池内的容纳环境，使得环境经由流体通道与晶体管通道电连通。在一些实施例中，晶体管沟道的其余部分可以被涂覆，例如，使得晶体管沟道的电学特性反映了流体通道与之通信的环境的电气行为。本发明的其他方面通常涉及制造这种传感器的方法，使用这种传感器的方法，涉及这种传感器的套件等。

IPRDB

热门服务

关于我们

友情链接

联系方式