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1. 发明申请

US20110077894A1 Process parameter assessment method for the solid target for gallium (Ga)-68/germanium (Ge)-68 generator 有权
标题翻译：镓（Ga）-68 /锗（Ge）-68发生器的固体靶的工艺参数评估方法
公开(公告)号：US20110077894A1
公开(公告)日：2011-03-31
申请号：US12569908
申请日：2009-09-30
申请人： Ming-Hsin Li , Ting Shien Duh , Wuu-Jyn Lin
发明人： Ming-Hsin Li , Ting Shien Duh , Wuu-Jyn Lin
IPC分类号： G06F15/00
CPC分类号： G21G1/10 , G21G2001/0094
摘要： A process parameter assessment method for the solid target for gallium (Ga)-68/germanium (Ge)-68 generator mainly consists of the procedures: first calculate the thickness d for the electroplated gallium (Ga)-69 on the solid target; and then through a graph of decay curves comprising 69Ga(p, 2n) 68Ge target thickness and incident energy with 5 different incident energy doses (30, 26, 25, 24, 23 MeV), based on electroplating thickness d, derive the corresponding irradiation energy dose Yi for each group after decay; and through the graph comprising 69Ga(p, 2n) 68Ge incident energy and reaction cross-sectional area (containing corrected function graph of incident energy for germanium-68, gallium-68, or zinc-65 and reaction cross-sectional area), based on the defined range by irradiation energy dose Xi and the corresponding irradiation energy dose Yi, derive the nuclear reaction cross-sectional area for each group for germanium (Ge)-68, gallium (Ga)-68, zinc (Zn)-65 and figure out the mean reaction area (MRA) from the reaction cross-sectional area of each group; and select the maximum germanium (Ge)-68 MRA value and the minimum gallium (Ga)-68 and zinc (Zn)-65 MRA values; and generate the required default irradiation energy for the MRA of each group as the optimal reaction energy.
摘要翻译：用于镓（Ga）-68 /锗（Ge）-68发生器的固体靶的工艺参数评估方法主要包括以下步骤：首先计算固体靶上电镀镓（Ga）-69的厚度d; 然后通过基于电镀厚度d的包括69Ga（p，2n）68Ge目标厚度和具有5种不同入射能量剂量（30,26,25,24,23MeV）的入射能）的衰减曲线图导出相应的辐射能量Yi每组后衰变; 并且通过包括69Ga（p，2n）68Ge入射能和反应截面积（包含用于锗-68，镓-68或锌-65的入射能量的校正函数图和反应横截面积）的图，基于通过照射能量剂量Xi和相应的照射能量剂量Yi定义的范围，得出锗（Ge）-68，镓（Ga）-68，锌（Zn）-65和从每组的反应横截面积中求出平均反应面积（MRA）; 并选择最大锗（Ge）-68 MRA值和最小镓（Ga）-68和锌（Zn）-65 MRA值; 并为每组的MRA产生所需的默认照射能量作为最佳反应能量。

2. 发明申请

US20110077430A1 Method and precursor for production of no-carrier-added N-(4-[18F] fluorobutyl)-Ethacrynic amide 审中-公开
标题翻译：制备无载体加入的N-（4- [18 F]氟丁基） - 乙酰胺的方法和前体
公开(公告)号：US20110077430A1
公开(公告)日：2011-03-31
申请号：US12569910
申请日：2009-09-30
申请人： Chung-Shan Yu , Li-Wu Chiang , Hao-Lien Huang , Yu-Hsuan Ku , Chia-Jung Chen , Shao Wei Chen , Yean-Hung Tu , Mao-Hsung Chang , Jenn-Tzong Chen , Wuu-Jyn Lin
发明人： Chung-Shan Yu , Li-Wu Chiang , Hao-Lien Huang , Yu-Hsuan Ku , Chia-Jung Chen , Shao Wei Chen , Yean-Hung Tu , Mao-Hsung Chang , Jenn-Tzong Chen , Wuu-Jyn Lin
IPC分类号： C07C233/17
CPC分类号： C07C233/13 , C07C233/18 , C07C309/73 , Y02P20/55 , Y02P20/582
摘要： The present invention is related to a precursor for no-carrier-added fluorine-18 labeled ethacrynic acid, N-(4-[18F]fluorobutyl)-Ethacrynic amide([18F]FBuEA) and the preparation method for HPLC non-radioactive standards. Its chemical structure is shown in the following: In the precursor, R1 represents a protective group for the amide functional group; R2 represents leaving group; or R1 represents carboxyl group, R2 represents p-tosyloxy, methane sulfonyloxy group or trifluoromethane sulfonyloxy group or bromine (Br). For the HPLC non-radioactive standards, R1 represents a protective group for the amide functional group and hydrogen, R2 represents fluorine.
摘要翻译：本发明涉及无载体添加的氟-18标记的乙酰丙酸，N-（4- [18 F]氟丁基） - 乙酰胺（[18F] FBuEA）的前体）和HPLC非放射性标准品的制备方法。其化学结构如下：在前体中，R1表示酰胺官能团的保护基; R2表示离去基团; 或R 1表示羧基，R 2表示对甲苯磺酰氧基，甲磺酰氧基或三氟甲磺酰氧基或溴（Br）。对于HPLC非放射性标准品，R1表示酰胺官能团和氢的保护基，R2表示氟。

3. 发明授权

US08239159B2 Method used to yield irradiation product with minimal impurity for solid target for gallium (Ga)-68/germanium (Ge)-68 generator 有权
标题翻译：用于为镓（Ga）-68 /锗（Ge）-68发生器的固体靶产生最小杂质的辐射产物的方法
公开(公告)号：US08239159B2
公开(公告)日：2012-08-07
申请号：US12569908
申请日：2009-09-30
申请人： Ming-Hsin Li , Ting Shien Duh , Wuu-Jyn Lin
发明人： Ming-Hsin Li , Ting Shien Duh , Wuu-Jyn Lin
IPC分类号： G06F15/00
CPC分类号： G21G1/10 , G21G2001/0094
摘要： A method used to yield irradiation product with minimal impurity for the solid target for gallium (Ga)-68/germanium (Ge)-68 generator mainly consists of the procedures: first calculate the thickness d for the electroplated gallium (Ga)-69 on the solid target; and then through a graph of decay curves including 69Ga(p, 2n) 68Ge target thickness and incident energy with 5 different incident energy doses, derive the corresponding irradiation energy dose Yi for each group after decay; and through the graph including 69Ga(p,2n)68Ge incident energy and reaction cross-sectional area, derive the nuclear reaction cross-sectional area for each group for germanium(Ge)-68, gallium (Ga)-68, zinc (Zn)-65 and figure out the mean reaction area (MRA) from the reaction cross-sectional area of each group; and select the maximum germanium(Ge)-68 MRA value and the minimum gallium (Ga)-68 and zinc (Zn)-65 MRA values; and generate the required default irradiation energy for the MRA of each group.
摘要翻译：用于产生镓（Ga）-68 /锗（Ge）-68发生器的固体靶的杂质最小的辐射产物的方法主要包括以下步骤：首先计算电镀镓（Ga）-69的厚度d 坚实的目标; 然后通过包括69 Ga（p，2n）68Ge目标厚度和入射能量与5个不同入射能量剂量的衰减曲线图，得出每个组在衰变后的相应的照射能量剂量Yi; 通过包括69Ga（p，2n）68Ge入射能和反应截面积的图，得出锗（Ge）-68，镓（Ga）-68，锌（Zn）的每个组的核反应截面积）-65，计算每组反应截面积的平均反应面积（MRA）; 并选择最大锗（Ge）-68 MRA值和最小镓（Ga）-68和锌（Zn）-65 MRA值; 并为每组的MRA产生所需的默认照射能量。

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