会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Array substrate for in-plane switching mode liquid crystal display device
    • 阵列基板用于面内切换模式液晶显示装置
    • US08456600B2
    • 2013-06-04
    • US13087560
    • 2011-04-15
    • Won-Ho Lee
    • Won-Ho Lee
    • G02F1/1343G02F1/1368G02F1/139
    • H01L27/1214G02F1/134363
    • An array substrate for an in-plane switching mode liquid crystal display device includes a gate line on a substrate including a pixel region, the pixel region including a first domain at a lower side with respect to the gate line and a second domain at an upper side with respect to the gate line; a data line crossing the gate line; a thin film transistor in the pixel region and at a crossing portion of the gate and data lines; a plurality of first pixel electrodes in the first domain; a plurality of second pixel electrodes in the second domain, the plurality of first pixel electrodes and plurality of second pixel electrodes sharing the thin film transistor; a plurality of first common electrodes in the first domain and alternately arranged with the plurality of first pixel electrodes; and a plurality of second common electrodes in the second domain and alternately arranged with the plurality of second pixel electrodes.
    • 面内切换模式液晶显示装置的阵列基板包括在包括像素区域的基板上的栅极线,该像素区域包括相对于栅极线在下侧的第一区域和位于上部的第二区域的像素区域 相对于栅极线; 跨越栅极线的数据线; 像素区域中的栅极和数据线的交叉部分处的薄膜晶体管; 第一域中的多个第一像素电极; 所述第二区域中的多个第二像素电极,所述多个第一像素电极和共享所述薄膜晶体管的多个第二像素电极; 多个第一公共电极,并且与多个第一像素电极交替布置; 以及多个第二公共电极,并且与所述多个第二像素电极交替布置。
    • 8. 发明授权
    • CMOS image sensor with wide dynamic range
    • CMOS图像传感器具有宽动态范围
    • US08188524B2
    • 2012-05-29
    • US11646235
    • 2006-12-28
    • Won-Ho Lee
    • Won-Ho Lee
    • H01L31/062H01L31/113
    • H01L27/14609H04N5/341H04N5/3745
    • The present invention relates a CMOS (Complementary Metal Oxide Semiconductor) image sensor capable of improving dynamic range by using an additional driver transistor. The CMOS image sensor according to the present invention has a pixel array which has a plurality of unit pixels each of which includes a photodiode and a fist transistor to act as a source follower buffer amplifier to amplify photogenerated charges accumulated in the photodiode. Also, the CMOS image sensor includes a second transistor for a buffer amplifier to amplify and output a gate input voltage in the unit pixel, wherein an output signal of the first transistor is applied to a gate of the second.
    • 本发明涉及能够通过使用额外的驱动晶体管来改善动态范围的CMOS(互补金属氧化物半导体)图像传感器。 根据本发明的CMOS图像传感器具有像素阵列,其具有多个单位像素,每个像素包括光电二极管和第一晶体管,用作源跟随缓冲放大器,以放大积聚在光电二极管中的光生电荷。 此外,CMOS图像传感器包括用于缓冲放大器的第二晶体管,用于放大并输出单位像素中的栅极输入电压,其中第一晶体管的输出信号施加到第二晶体管的栅极。
    • 10. 发明申请
    • ARRAY SUBSTRATE FOR IN-PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE
    • 用于平面内切换模式液晶显示装置的阵列基板
    • US20110267571A1
    • 2011-11-03
    • US13087560
    • 2011-04-15
    • Won-Ho LEE
    • Won-Ho LEE
    • G02F1/1343H01L33/62
    • H01L27/1214G02F1/134363
    • An array substrate for an in-plane switching mode liquid crystal display device includes a gate line on a substrate including a pixel region, the pixel region including a first domain at a lower side with respect to the gate line and a second domain at an upper side with respect to the gate line; a data line crossing the gate line; a thin film transistor in the pixel region and at a crossing portion of the gate and data lines; a plurality of first pixel electrodes in the first domain; a plurality of second pixel electrodes in the second domain, the plurality of first pixel electrodes and plurality of second pixel electrodes sharing the thin film transistor; a plurality of first common electrodes in the first domain and alternately arranged with the plurality of first pixel electrodes; and a plurality of second common electrodes in the second domain and alternately arranged with the plurality of second pixel electrodes.
    • 面内切换模式液晶显示装置的阵列基板包括在包括像素区域的基板上的栅极线,该像素区域包括相对于栅极线在下侧的第一区域和位于上部的第二区域的像素区域 相对于栅极线; 跨越栅极线的数据线; 像素区域中的栅极和数据线的交叉部分处的薄膜晶体管; 第一域中的多个第一像素电极; 所述第二区域中的多个第二像素电极,所述多个第一像素电极和共享所述薄膜晶体管的多个第二像素电极; 多个第一公共电极,并且与多个第一像素电极交替布置; 以及多个第二公共电极,并且与所述多个第二像素电极交替布置。