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1. 发明申请

US20100276283A1 Vacuum coating unit for homogeneous PVD coating 审中-公开
标题翻译：用于均匀PVD涂层的真空镀膜单元
公开(公告)号：US20100276283A1
公开(公告)日：2010-11-04
申请号：US12517515
申请日：2007-12-03
申请人： Wolf-Dieter Muenz , Stefan Kunkel
发明人： Wolf-Dieter Muenz , Stefan Kunkel
IPC分类号： H01J37/32 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3405 , H01J37/32055 , H01J37/32559 , H01J37/3408 , H01J37/3438 , H01J2237/3323
摘要： The apparatus includes a coating chamber, two or more cathodes which are arranged peripherally within the coating chamber, substrate carriers for holding the substrate, vacuum pumps and voltage sources wherein an individual anode is arranged centrally between the cathodes in the coating chamber and the substrate is positioned between the anode and the cathode. In each case a gas discharge with a plasma is ignited between the individual anode and the cathodes. The substrates are held fixed in position or are rotated about one or more axes and in the process subjected to the plasma.
摘要翻译：该设备包括一个涂层室，两个或更多个阴极，其外围设置在涂覆室内，用于保持衬底的衬底载体，真空泵和电压源，其中单个阳极位于涂覆室中的阴极和衬底之间的中心位置位于阳极和阴极之间。在每种情况下，在单个阳极和阴极之间点燃具有等离子体的气体放电。基板被保持固定在适当位置或围绕一个或多个轴线旋转，并且在经受等离子体的工艺中。

2. 发明申请

US20090068450A1 Method and Apparatus for Multi-Cathode PVD Coating and Substrate with PVD Coating 审中-公开
标题翻译：多阴极PVD涂层和PVD涂层基板的方法和装置
公开(公告)号：US20090068450A1
公开(公告)日：2009-03-12
申请号：US11995123
申请日：2006-07-11
申请人： Wolf-Dieter Muenz , Dieter Hofmann , Stefan Kunkel , Juergen Mangold , Hans Schuessler
发明人： Wolf-Dieter Muenz , Dieter Hofmann , Stefan Kunkel , Juergen Mangold , Hans Schuessler
IPC分类号： B32B15/04 , C23C14/35 , C23C14/34 , B32B9/00 , C23C14/42 , B32B9/04
CPC分类号： C23C14/352 , C23C14/0641 , H01J37/32779 , H01J37/3405 , H01J37/3426 , H01J37/3467 , Y10T428/265 , Y10T428/31504 , Y10T428/31678
摘要： The invention relates to a method for operating a multi-cathode-PVD-coating system. According to the invention, one part of the cathodes operates after the high power impulse cathodic sputtering which is assisted by magnetic fields and the remainder operates after the direct current magnetic field assisted cathodic sputtering. The high power impulse cathodic sputtering which is assisted by magnetic fields is used as a source of multi-ionised metal ions during the ion-assisted in vacuo pre-treatment of substrates, whilst both types of cathodic sputtering are always used simultaneously during coating and whilst both types of cathodes are connected to different materials.
摘要翻译：本发明涉及一种操作多阴极PVD涂层系统的方法。根据本发明，阴极的一部分在由磁场辅助的高功率脉冲阴极溅射之后操作，其余部分在直流磁场辅助阴极溅射之后进行工作。在离子辅助真空预处理基板期间，由磁场辅助的高功率脉冲阴极溅射被用作多电离金属离子的源，而两种类型的阴极溅射总是在涂覆期间同时使用，同时两种类型的阴极连接到不同的材料。

3. 发明授权

US6033734A Method of coating metallic and ceramic substrates 失效
标题翻译：涂覆金属和陶瓷基材的方法
公开(公告)号：US6033734A
公开(公告)日：2000-03-07
申请号：US767889
申请日：1996-12-17
申请人： Wolf-Dieter Muenz , Iain James Smith , Lee Adrian Donohue , John Stuart Brooks
发明人： Wolf-Dieter Muenz , Iain James Smith , Lee Adrian Donohue , John Stuart Brooks
IPC分类号： C23C14/02 , C23C14/06 , C23C14/24 , C23C14/35 , B05D3/06
CPC分类号： C23C14/0641 , C23C14/022
摘要： The invention is concerned with a reduction of the surface roughness of titanium-aluminum-nitride hard material layers produced by the combined cathodic arc discharge vaporization process and the imbalanced magnetron coating process (ABS method) or by the pure cathodic arc discharge vaporization process.
摘要翻译：本发明涉及通过组合阴极电弧放电汽化工艺和不平衡磁控管涂覆工艺（ABS方法）或通过纯阴极电弧放电蒸发工艺生产的氮化钛 - 氮化铝硬质材料层的表面粗糙度的降低。

4. 发明授权

US3997411A Method for the production of a thin film electric circuit 失效
标题翻译：制造薄膜电路的方法
公开(公告)号：US3997411A
公开(公告)日：1976-12-14
申请号：US543140
申请日：1975-01-22
申请人： Wolf-Dieter Muenz
发明人： Wolf-Dieter Muenz
IPC分类号： H01L21/70 , C25D5/02
CPC分类号： H01L21/707
摘要： Method for the production of an electric thin-film circuit having a conductor path and at least one capacitor and/or one resistor, and comprising a substrate base member and the forming of a first tantalum-aluminum-alloy layer thereupon and etching the tantalum-aluminum-alloy layer to form the outline of the conductor path. A second tantalum-aluminum alloy layer is then laid on the first tantalum-aluminum-alloy layer and has a tantalum content of approximately 2 through 20 atomic percent at least in the area of the capacitor. An oxidation layer is formed upon the second tantalum-aluminum-alloy layer to constitute the capacitor dielectric. The conductor paths and the opposite capacitor electrode are formed of a conductive layer such as a nickel-chromium-gold layer which is applied as a surface layer and serves as a capacitor electrode and as conductor paths.
摘要翻译：制造具有导体路径的电薄膜电路和至少一个电容器和/或一个电阻器的方法，并且包括基底基底和在其上形成第一钽 - 铝合金层并蚀刻钽 - 铝合金层形成导体路径的轮廓。然后将第二钽 - 铝合金层铺设在第一钽 - 铝合金层上，并且至少在电容器的面积中具有大约2至20原子百分比的钽含量。在第二钽 - 铝合金层上形成氧化层以构成电容器电介质。导体路径和相对电容器电极由作为表面层施加并用作电容器电极和导体路径的镍 - 铬 - 金层等导电层形成。

5. 发明授权

US3949275A Electric thin-film circuit and method for its production 失效
标题翻译：电薄膜电路及其制作方法
公开(公告)号：US3949275A
公开(公告)日：1976-04-06
申请号：US480826
申请日：1974-06-19
申请人： Wolf-Dieter Muenz
发明人： Wolf-Dieter Muenz
IPC分类号： H01C17/08 , H01G4/10 , H01G4/40 , H01L21/70 , H01L27/01 , H01L49/02 , H05K1/16 , H05K3/30 , H02B1/04 , B05D5/12 , H01L27/12
CPC分类号： H01L49/02 , H01L21/707 , H05K3/30
摘要： An electric thin-film circuit has a conductor path and at least one capacitor and/or one resistor, and it comprises a substrate base member with a first tantalum-aluminum-alloy layer formed thereupon, and is etched to form the outline of the conductor path. A second tantalum-aluminum-alloy layer with a tantalum content of approximately 2 through 20 atomic percent is disposed thereupon, at least in the area of a capacitor, and an oxidation layer is formed upon this second tantalum-aluminum-alloy layer to constitute the capacitor dielectric. The conductor paths and the opposite capacitor electrode are formed of a conductive layer such as a nickel-chromium-gold layer.
摘要翻译：电薄膜电路具有导体路径和至少一个电容器和/或一个电阻器，并且其包括其上形成有第一钽 - 铝合金层的基底基底，并被蚀刻以形成导体的轮廓路径。至少在电容器的区域中设置钽含量约为2至20原子％的第二钽 - 铝合金层，并且在该第二钽 - 铝合金层上形成氧化层以构成电容电介质。导电路径和相对电容器电极由诸如镍 - 铬 - 金层的导电层形成。

6. 发明授权

US6033768A Hard material coating with yttrium and method for its deposition 失效
标题翻译：用钇硬材料涂层及其沉积方法
公开(公告)号：US6033768A
公开(公告)日：2000-03-07
申请号：US945871
申请日：1997-11-03
申请人： Wolf-Dieter Muenz , Ian Smith , Lee Adrian Donohue , John Stuart Brooks
发明人： Wolf-Dieter Muenz , Ian Smith , Lee Adrian Donohue , John Stuart Brooks
IPC分类号： C23C14/06 , C23C14/14
CPC分类号： C23C14/0641 , Y10T428/24975 , Y10T428/265
摘要： Ternary hard material layers are described to which a small proportion of yttrium is added to increase the resistance to wear at elevated temperatures.
摘要翻译： PCT No.PCT / EP97 / 01234 Sec。 371日期：1997年11月3日 102（e）日期1997年11月3日PCT 1997年3月11日PCT公布。公开号WO97 / 34023 日期1997年9月18日描述了三种硬质材料层，其中加入少量的钇以增加高温下的耐磨性。

7. 发明授权

US4283485A Conductor crossovers for integrated RC-circuits 失效
标题翻译：用于集成RC电路的导体交叉
公开(公告)号：US4283485A
公开(公告)日：1981-08-11
申请号：US40703
申请日：1979-05-21
申请人： Wolf-Dieter Muenz , Hans W. Poetzlberger
发明人： Wolf-Dieter Muenz , Hans W. Poetzlberger
IPC分类号： H01L21/70 , H01L21/768 , H01L23/522 , H01L27/01 , H05K3/46 , C25D11/02 , C25D11/34 , H05K3/06
CPC分类号： H01L21/707 , H05K3/4685 , Y10T29/49156
摘要： A method is disclosed for the manufacture in electric thin film R and RC circuits of a conductor crossover. A first conductor is structured at the crossover from a TaAl double layer. A portion of the top layer of the double layer is converted to a TaAl oxide and an SiO.sub.2 layer is then applied over the TaAl oxide as a double dielectric. A second conductor is then structured over the double dielectric.
摘要翻译：公开了一种用于在导体交叉的电薄膜R和RC电路中制造的方法。第一导体构造在与TaAl双层交叉处。将双层顶层的一部分转化为TaAl氧化物，然后将SiO 2层作为双电介质施加在TaAl氧化物上。然后在双电介质上构造第二导体。

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