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    • 5. 发明申请
    • Bracket And Lockable Storage Box System Incorporating Same
    • 支架和可锁定存储盒系统相同
    • US20120305729A1
    • 2012-12-06
    • US13150870
    • 2011-06-01
    • Stephen William Huber
    • Stephen William Huber
    • F16M13/00
    • E05G1/005E05Y2600/626
    • Brackets for use in securing portable locking storage boxes and other items are disclosed herein, along with systems that include such brackets. According to one embodiment, a bracket for use in securing a portable locking item includes a pair of proximal portions, an outwardly-extending distal portion between the proximal portions, and a pair of transition portions. Each proximal portion has an interaction face and at least one aperture for passing a fastener therethrough. The proximal portion interaction faces are generally parallel and coplanar with one another. The distal portion has a pair of sidewalls spaced apart from one another. A respective transition portion is between each proximal portion and the distal portion, and each transition portion has an interaction face extending at an angle from a respective proximal portion interaction face to a respective distal portion sidewall.
    • 本文公开了用于确保便携式锁定储物箱和其他物品的支架以及包括这种支架的系统。 根据一个实施例,用于固定便携式锁定物品的支架包括一对近端部分,近端部分之间向外延伸的远侧部分和一对过渡部分。 每个近端部分具有相互作用面和用于使紧固件穿过其中的至少一个孔。 近端部分相互作用面通常彼此平行并且共面。 远侧部分具有彼此间隔开的一对侧壁。 相应的过渡部分在每个近端部分和远端部分之间,并且每个过渡部分具有从相应的近端部分相互作用面向相应的远侧部分侧壁以一定角度延伸的相互作用面。
    • 6. 发明申请
    • Planar gated field emission devices
    • 平面门控场发射装置
    • US20060145582A1
    • 2006-07-06
    • US11029707
    • 2005-01-05
    • William Huber
    • William Huber
    • H01J1/14H01J1/02H01J1/05H01J9/04
    • H01J1/3042H01J3/022H01J9/025H01J2329/00
    • In a field emitter (100) including a substrate (110), the substrate (110) has a substantially non-conductive top substrate surface (112). A conductive cathode member (130) is disposed on the top substrate surface (112) and has a top cathode surface (132). A conductive gate member (120) is disposed on the top substrate surface (112) and is substantially coplanar with the cathode member (130). An emitter structure (140) extends away from the top cathode surface (132). The gate member (120) is spaced apart from the cathode member (130) at a distance so that when a predetermined potential is applied between the cathode member (130) and gate member (120), the emitter structure (140) will emit electrons.
    • 在包括衬底(110)的场发射器(100)中,衬底(110)具有基本不导电的顶部衬底表面(112)。 导电阴极部件(130)设置在顶部基板表面(112)上并具有顶部阴极表面(132)。 导电门构件(120)设置在顶部衬底表面(112)上,并且与阴极构件(130)基本共面。 发射极结构(140)远离顶部阴极表面(132)延伸。 门构件(120)与阴极构件(130)间隔一定距离,使得当在阴极构件(130)和栅极构件(120)之间施加预定电位时,发射极结构(140)将发射电子 。
    • 7. 发明申请
    • Self-aligned gated rod field emission device and associated method of fabrication
    • 自对准门控棒场发射装置及其相关制造方法
    • US20050067935A1
    • 2005-03-31
    • US10670487
    • 2003-09-25
    • Ji LeeReed CordermanWilliam Huber
    • Ji LeeReed CordermanWilliam Huber
    • H01J1/304H01J3/02H01J9/02H01J1/02H01J9/00H01J9/04
    • H01J1/3044H01J3/022H01J9/025
    • A self-aligned gated field emission device and an associated method of fabrication are described. The device includes a substrate and a porous layer disposed adjacent to the surface of the substrate, wherein the porous layer defines a plurality of substantially cylindrical channels, each of the plurality of substantially cylindrical channels aligned substantially parallel to one another and substantially perpendicular to the surface of the substrate. The device also includes a plurality of substantially rod-shaped structures disposed within at least a portion of the plurality of substantially cylindrical channels defined by the porous layer and adjacent to the surface of the substrate, wherein a portion of each of the plurality of substantially rod-shaped structures protrudes above the surface of the porous layer. The device further includes a gate dielectric layer disposed on the surface of the porous layer, wherein the gate dielectric layer is disposed between the plurality of substantially rod-shaped structures. The device still further includes a conductive layer selectively disposed on the surface of the gate dielectric layer, wherein the conductive layer is selectively disposed between the plurality of substantially rod-shaped structures.
    • 描述了自对准的门控场发射器件和相关联的制造方法。 该装置包括衬底和邻近衬底表面设置的多孔层,其中多孔层限定多个基本上圆柱形的通道,多个基本上圆柱形通道中的每一个基本上彼此平行地基本平行并基本上垂直于表面 的基底。 该装置还包括多个基本上棒状的结构,其设置在由多孔层限定并且邻近基底的表面限定的多个基本圆柱形通道的至少一部分内,其中多个基本上棒状物中的每一个的一部分 形状的结构突出在多孔层的表面上方。 该器件还包括设置在多孔层的表面上的栅极电介质层,其中栅极电介质层设置在多个基本上棒状结构之间。 该器件还包括选择性地设置在栅极电介质层的表面上的导电层,其中导电层选择性地设置在多个基本上棒状的结构之间。
    • 10. 发明申请
    • Self-aligned gated carbon nanotube field emitter structures and associated methods of fabrication
    • 自对准门控碳纳米管场发射极结构及相关制造方法
    • US20050067936A1
    • 2005-03-31
    • US10671143
    • 2003-09-25
    • Ji LeeWilliam Huber
    • Ji LeeWilliam Huber
    • H01J3/02H01J9/02H01J1/00H01J1/02H01J9/04H01J9/12
    • B82Y10/00H01J3/022H01J9/025H01J2201/30469
    • A method for fabricating a self-aligned gated carbon nanotube field emitter structure includes providing a substrate, depositing a dielectric material on the surface of the substrate and depositing a conductor layer on the surface of the dielectric material. The method also includes selectively etching the conductor layer to form an opening and selectively etching the dielectric material to form a micro-cavity. The method further includes depositing a base layer structure in the micro-cavity adjacent to the surface of the substrate, wherein the base layer structure has a substantially conical shape, and depositing a catalyst on a portion of the surface of the base layer structure, wherein the catalyst is suitable for growing at least one carbon nanotube. The method still further includes applying an electrical potential to the substrate and the conductor layer, wherein the electrical potential generates a plurality of electrical field lines that are deflected around the surface of the base layer structure, and wherein the plurality of electrical field lines have a strength that is greatest in a direction substantially perpendicular to the surface of the substrate. Finally, the method includes growing at least one carbon nanotube from the catalyst in the presence of the plurality of electrical field lines, wherein the at least one carbon nanotube is grown in a direction substantially perpendicular to the surface of the substrate.
    • 制造自对准门控碳纳米管场致发射体结构的方法包括提供衬底,在衬底的表面上沉积电介质材料并在电介质材料的表面上沉积导体层。 该方法还包括选择性地蚀刻导体层以形成开口并选择性地蚀刻电介质材料以形成微腔。 该方法还包括将基底层结构沉积在与基底表面相邻的微腔中,其中基底层结构具有基本上圆锥形的形状,并且在基底层结构的一部分表面上沉积催化剂,其中 该催化剂适用于生长至少一种碳纳米管。 该方法还包括向基板和导体层施加电势,其中电势产生围绕基层结构的表面偏转的多个电场线,并且其中多个电场线具有 在基本上垂直于基底表面的方向上最大的强度。 最后,该方法包括在多个电场线的存在下从催化剂生长至少一个碳纳米管,其中至少一个碳纳米管在基本上垂直于衬底表面的方向上生长。