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1. 发明授权

US08906157B2 Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant 有权
标题翻译：用直径保持恒定的部分拉出由硅组成的单晶的方法
公开(公告)号：US08906157B2
公开(公告)日：2014-12-09
申请号：US12913964
申请日：2010-10-28
申请人： Thomas Schroeck , Wilfried von Ammon , Claus Kropshofer
发明人： Thomas Schroeck , Wilfried von Ammon , Claus Kropshofer
IPC分类号： C30B15/02 , C30B30/04 , C30B15/30 , C30B29/06 , C30B15/22
CPC分类号： C30B29/06 , C30B15/22 , C30B15/305 , C30B30/04
摘要： Single crystal composed of silicon with a section having a diameter that remains constant, are pulled by a method wherein the single crystal is pulled with a predefined pulling rate vp having the units [mm/min]; and the diameter of the single crystal in the section having a diameter that remains constant is regulated to the predefined diameter by regulating the heating power of a first heating source which supplies heat to the single crystal and to a region of the melt that adjoins the single crystal and is arranged above the melt, such that diameter fluctuations are corrected with a period duration T that is not longer than (2·18 mm)/vp.
摘要翻译：由具有保持恒定直径的部分的硅构成的单晶通过其中以具有单位[mm / min]的预定拉伸速率vp拉动单晶的方法被拉伸; 并且具有保持恒定直径的截面中的单晶的直径通过调节向单晶提供热量的第一加热源和与单晶相邻的熔体区域的加热功率而调节到预定直径并且布置在熔体上方，使得直径波动以不长于（2.18mm）/ vp的周期T来校正。

2. 发明授权

US08834627B2 Method for producing a single crystal composed of silicon by remelting granules 有权
标题翻译：通过重熔粒子制造由硅构成的单晶的方法
公开(公告)号：US08834627B2
公开(公告)日：2014-09-16
申请号：US12913970
申请日：2010-10-28
申请人： Wilfried von Ammon , Ludwig Altmannshofer , Martin Wasner
发明人： Wilfried von Ammon , Ludwig Altmannshofer , Martin Wasner
IPC分类号： C30B9/04 , C30B29/06 , C30B13/20
CPC分类号： C30B13/20 , C30B29/06
摘要： Silicon single crystals are grown by a method of remelting silicon granules, by crystallizing a conically extended section of the single crystal with the aid of an induction heating coil arranged below a rotating plate composed of silicon; feeding inductively melted silicon through a conical tube in the plate, the tube enclosing a central opening of the plate and extending below the plate, to a melt situated on the conically extended section of the single crystal in contact with a tube end of the conical tube, wherein by means of the induction heating coil below the plate, sufficient energy is provided to ensure that the external diameter of the tube end is not smaller than 15 mm as long as the conically extended section of the single crystal has a diameter of 15 to 30 mm.
摘要翻译：通过利用设置在由硅组成的旋转板下方的感应加热线圈结晶单晶的锥形延伸部分，通过重新熔化硅颗粒的方法来生长硅单晶; 通过板中的锥形管馈送感应熔融的硅，管包围板的中心开口并在板下方延伸到位于单晶的锥形延伸部分处的熔体，其与锥形管的管端接触其中，通过板下方的感应加热线圈，提供足够的能量以确保管端的外径不小于15mm，只要单晶的锥形延伸部分的直径为15至 30毫米。

3. 发明授权

US08454746B2 Method for producing a single crystal composed of silicon using molten granules 有权
标题翻译：使用熔融颗粒生产由硅组成的单晶的方法
公开(公告)号：US08454746B2
公开(公告)日：2013-06-04
申请号：US13008053
申请日：2011-01-18
申请人： Wilfried von Ammon , Ludwig Altmannshofer
发明人： Wilfried von Ammon , Ludwig Altmannshofer
IPC分类号： C30B13/00 , C30B15/06 , C30B11/00 , C30B15/02 , C30B29/06
CPC分类号： C30B13/00 , C30B11/00 , C30B13/20 , C30B13/26 , C30B13/30 , C30B13/32 , C30B15/02 , C30B15/06 , C30B29/06 , Y10T117/1056
摘要： Silicon single crystals are prepared from molten granules, by producing a first volume of molten silicon between a growing single crystal and the lower end of a silicon conical tube which is closed at its lower end, and encloses a central opening of a rotating silicon plate below which the tube extends, by means of a first induction heating coil arranged below the plate; producing a second volume of molten silicon by a second induction heating coil arranged above the plate; melting the lower end of the tube to form a passage for the second volume of molten silicon, the passage produced at a point in time when the second volume is not yet present or is less than double the volume of the first volume; and crystallizing monocrystalline silicon on the growing single crystal with consumption of molten silicon from the first and the second volume.
摘要翻译：由熔融颗粒制备硅单晶，通过在生长的单晶和在其下端封闭的硅锥形管的下端之间产生第一体积的熔融硅，并且在下面包围旋转硅板的中心开口通过布置在板下方的第一感应加热线圈，管延伸; 通过布置在板上方的第二感应加热线圈产生第二体积的熔融硅; 熔化管的下端以形成用于第二体积的熔融硅的通道，该通道在第二体积不存在的时间点或者小于第一体积的体积的两倍时产生; 并且在生长的单晶上结晶单晶硅，并从第一和第二体积消耗熔融硅。

4. 发明授权

US08231725B2 Semiconductor wafers of silicon and method for their production 有权
标题翻译：硅半导体晶圆及其生产方法
公开(公告)号：US08231725B2
公开(公告)日：2012-07-31
申请号：US13225822
申请日：2011-09-06
申请人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
发明人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
IPC分类号： C30B29/06
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译：硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。

5. 发明申请

US20110095018A1 Device For Producing A Single Crystal Composed Of Silicon By Remelting Granules 审中-公开
标题翻译：通过重熔颗粒制造由硅组成的单晶的装置
公开(公告)号：US20110095018A1
公开(公告)日：2011-04-28
申请号：US12910906
申请日：2010-10-25
申请人： Wilfried von Ammon , Ludwig Altmannshofer , Andris Muiznieks
发明人： Wilfried von Ammon , Ludwig Altmannshofer , Andris Muiznieks
IPC分类号： H05B6/10
CPC分类号： C30B13/20 , C30B29/06 , H05B3/36 , H05B6/10
摘要： A device for producing a silicon single crystal by remelting granules has a rotating plate of silicon having a central opening and having a silicon tubular extension which encloses the opening and extends below the plate; a first induction heating coil above the plate for melting granules; and a second induction heating coil below the plate for crystallizing the molten granules, wherein the second induction heating coil has, on its side lying opposite the silicon plate, a lower layer composed of a magnetically permeable material and an upper layer in which there is at least one cooling channel for conducting a coolant.
摘要翻译：通过重熔颗粒制造硅单晶的装置具有一个具有中心开口的硅旋转板，并具有一个包围该开口并延伸到板下方的硅管延伸部; 板上方的第一感应加热线圈用于熔化颗粒; 以及在所述板下面的用于使所述熔融颗粒结晶的第二感应加热线圈，其中所述第二感应加热线圈在与所述硅板相对的一侧上具有由导磁材料和上层组成的下层，至少一个用于传导冷却剂的冷却通道。

6. 发明授权

US07868325B2 Semiconductor wafer of single crystalline silicon and process for its manufacture 有权
标题翻译：单晶硅半导体晶圆及其制造工艺
公开(公告)号：US07868325B2
公开(公告)日：2011-01-11
申请号：US12372783
申请日：2009-02-18
申请人： Wilfried von Ammon
发明人： Wilfried von Ammon
IPC分类号： H01L29/04
CPC分类号： C30B29/06 , C30B15/04
摘要： Semiconductor wafer of monocrystalline silicon contain fluorine, the fluorine concentration being 1·1010 to 1·1016 atoms/cm3, and is free of agglomerated intrinsic point defects whose diameter is greater than or equal to a critical diameter. The semiconductor wafers are produced by providing a melt of silicon which is doped with fluorine, and crystallizing the melt to form a single crystal which contains fluorine within the range of 1·1010 to 1·1016 atoms/cm3, at a growth rate at which agglomerated intrinsic point defects having a critical diameter or larger would arise if fluorine were not present or present in too small an amount, and separating semiconductor wafers from the single crystal.
摘要翻译：单晶硅的半导体晶片含氟，氟浓度为1×10 10至1×10 16原子/ cm 3，并且不存在其直径大于或等于临界直径的附聚固有点缺陷。半导体晶片通过提供掺杂有氟的硅熔体，并使熔体结晶以形成含氟量在1×10 10至1×10 16原子/ cm 3范围内的单晶，其生长速率为如果氟不存在或以太小的量存在，并且将半导体晶片与单晶分离，则会产生具有临界直径或更大的附聚固有点缺陷。

7. 发明申请

US20080187736A1 Semiconductor wafers of silicon and method for their production 有权
标题翻译：硅半导体晶圆及其生产方法
公开(公告)号：US20080187736A1
公开(公告)日：2008-08-07
申请号：US12011713
申请日：2008-01-29
申请人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
发明人： Andreas Sattler , Wilfried von Ammon , Martin Weber , Walter Haeckl , Herbert Schmidt
IPC分类号： B32B9/00 , H01L21/20
CPC分类号： C30B29/06 , C30B15/203
摘要： Semiconductor wafers of silicon are produced by pulling a single crystal growing on a phase boundary from a melt contained in a crucible and cutting of semiconductor wafers therefrom, wherein during pulling of the single crystal, heat is delivered to a center of the phase boundary and a radial profile of a ratio V/G from the center to an edge of the phase boundary is controlled, G being the temperature gradient perpendicular to the phase boundary and V being the pull rate. The radial profile of the ratio V/G is controlled so that the effect of thermomechanical stress in the single crystal adjoining the phase boundary, is compensated with respect to creation of intrinsic point defects. The invention also relates to defect-free semiconductor wafers of silicon, which can be produced economically by this method.
摘要翻译：硅的半导体晶片是通过从包含在坩埚中的熔融物中拉出在相边界上生长的单晶并从其中切割半导体晶片而制造的，其中在单晶拉制期间，热被传递到相边界的中心，并且控制从相位边界的中心到边缘的比率V / G的径向轮廓，G是垂直于相边界的温度梯度，V是牵引速率。控制比率V / G的径向轮廓，使得邻接相位边界的单晶中的热机械应力的影响被补偿以产生固有点缺陷。本发明还涉及硅的无缺陷半导体晶片，其可以通过该方法经济地制造。

8. 发明授权

US07335256B2 Silicon single crystal, and process for producing it 有权
标题翻译：硅单晶及其制造方法
公开(公告)号：US07335256B2
公开(公告)日：2008-02-26
申请号：US11487669
申请日：2006-07-17
申请人： Martin Weber , Wilfried von Ammon , Herbert Schmidt , Janis Virbulis , Yuri Gelfgat , Leonid Gorbunov
发明人： Martin Weber , Wilfried von Ammon , Herbert Schmidt , Janis Virbulis , Yuri Gelfgat , Leonid Gorbunov
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , C30B15/206 , Y10S117/917 , Y10T117/1068
摘要： A silicon single crystal which, over an ingot length of over 10 percent of the total ingot length, has a uniform defect picture and narrow radial dopant and oxygen variations. The process in accordance with the Czochralski method involves bringing about a temperature distribution in the melt in the region of the solidification interface which deviates from rotational symmetry.
摘要翻译：在单锭长度超过总锭长度的10％以上的硅单晶具有均匀的缺陷图像和窄的径向掺杂剂和氧的变化。根据Czochralski方法的方法涉及在固化界面的偏离旋转对称性的区域中引起熔体中的温度分布。

9. 发明授权

US07052948B2 Film or layer made of semi-conductive material and method for producing said film or layer 有权
标题翻译：由半导体材料制成的薄膜或层及其制造方法
公开(公告)号：US07052948B2
公开(公告)日：2006-05-30
申请号：US10481537
申请日：2002-06-27
申请人： Brian Murphy , Reinhold Wahlich , Rüdiger Schmolke , Wilfried Von Ammon , James Moreland
发明人： Brian Murphy , Reinhold Wahlich , Rüdiger Schmolke , Wilfried Von Ammon , James Moreland
IPC分类号： H01L21/8238
CPC分类号： H01L21/3223 , H01L21/76251
摘要： The invention relates to a film or a layer made of semi-conducting material with low defect density in the thin layer, and a SOI-disk with a thin silicon layer exhibiting low surface roughness, defect density and thickness variations. The invention also relates to a method for producing a film or a layer made of semi-conductive material. Said method comprises the following steps: a) producing structures from a semi-conductive material with periodically repeated recesses which have a given geometrical structure, b) thermally treating the surface structured material until a layer with periodically repeated hollow spaces is formed under a closed layer on the surface of the material, c) separating the closed layer on the surface along the layer of hollow spaces from the remainder of the semi-conductive material.
摘要翻译：本发明涉及在薄层中具有低缺陷密度的半导体材料制成的膜或层，以及具有低表面粗糙度，缺陷密度和厚度变化的薄硅层的SOI-盘。本发明还涉及一种制造薄膜或由半导体材料制成的层的方法。所述方法包括以下步骤：a）从具有给定几何结构的周期性重复凹槽的半导体材料制造结构，b）热处理表面结构材料，直到形成具有周期性重复的中空空间的层，在所述材料的表面上，c）沿着所述中空空间层与所述半导体材料的其余部分分离所述表面上的所述封闭层。

10. 发明授权

US06001170A Process and apparatus for the growth of single crystals 失效
标题翻译：用于生长单晶的方法和装置
公开(公告)号：US06001170A
公开(公告)日：1999-12-14
申请号：US695315
申请日：1996-08-09
申请人： Erich Tomzig , Werner Zulehner , Wilfried Von Ammon , Yu M Gelfgat , Leonid Gorbunov
发明人： Erich Tomzig , Werner Zulehner , Wilfried Von Ammon , Yu M Gelfgat , Leonid Gorbunov
IPC分类号： C30B15/04 , C30B15/30 , C30B29/06 , C30B30/04 , H01L21/208 , C30B15/22
CPC分类号： C30B15/305 , Y10S117/917 , Y10T117/1032
摘要： A process for the growth of a single crystal from semiconductor material by the Czochralski method, in which the melt is subjected to the influence of a magnetic field during the crystal growth and the magnetic field is generated by superposing a static magnetic field and an alternating magnetic field. An apparatus for carrying out the process, has a magnetic means which comprises two coils which are arranged around a crucible, one coil generating a static magnetic field and the other coil generating an alternating magnetic field.
摘要翻译：通过切克劳斯基法从半导体材料生长单晶的方法，其中熔体在晶体生长期间受到磁场的影响，并且磁场通过叠加静态磁场和交变磁场而产生领域。用于执行该过程的装置具有磁性装置，其包括布置在坩埚周围的两个线圈，产生静磁场的一个线圈和产生交变磁场的另一个线圈。

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