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1. 发明授权

US4136436A Light energy conversion 失效
标题翻译：光能转换
公开(公告)号：US4136436A
公开(公告)日：1979-01-30
申请号：US747031
申请日：1976-12-02
申请人： Jack S. Kilby , Jay W. Lathrop , Wilbur A. Porter
发明人： Jack S. Kilby , Jay W. Lathrop , Wilbur A. Porter
IPC分类号： F24J2/04 , C25B1/00 , H01G9/20 , H01L31/00 , H01L31/042 , H01M8/18 , H01M14/00 , B01J17/00
CPC分类号： C25B1/003 , H01G9/20 , H01L24/24 , H01L31/042 , H01L31/062 , H01M14/005 , H01M8/186 , H01L2924/12032 , Y02E10/52 , Y02E60/528 , Y02P20/134 , Y02P70/56 , Y10S204/03
摘要： A process for the manufacture of a light energy converter involves forming of a plurality of photovoltaic sources wherein first bodies of a first conductivity type semiconductor material each has a surface layer of a second conductivity type material and second bodies of said second conductivity type semiconductor material each has a surface layer of said first conductivity type material. The first and second bodies are intermingled in a one level layer in an insulating support. A conductive layer is applied to interconnect the first conductivity type material of all said first bodies with the second conductivity type material of all said second bodies. An electrolyte may wet such sources where, upon exposure to light, the sources cause a current to flow in the electrolyte producing an electrochemical reaction. The products of this reaction where the electrolyte is a solution such as aqueous hydrogen iodide, and the hydrogen produced by the electrochemical reaction may be stored, burned as a fuel or used in a fuel cell to produce electrical energy.
摘要翻译：一种用于制造光能转换器的方法包括形成多个光伏源，其中第一导电类型半导体材料的第一主体各自具有第二导电类型材料的表面层和所述第二导电类型半导体材料的第二主体具有所述第一导电类型材料的表面层。第一和第二物体混合在绝缘支撑体中的一层中。施加导电层以将所有所述第一主体的第一导电类型材料与所有所述第二主体的第二导电类型材料互连。电解质可以润湿这样的源，其中当暴露于光时，源引起电流在电解质中流动，产生电化学反应。电解质是诸如碘化氢水溶液和通过电化学反应产生的氢的反应的产物可以作为燃料储存，燃烧或用于燃料电池中以产生电能。

2. 发明授权

US4333035A Areal array of tubular electron sources 失效
标题翻译：管状电子源的面阵列
公开(公告)号：US4333035A
公开(公告)日：1982-06-01
申请号：US34984
申请日：1979-05-01
申请人： Donald L. Parker , Wilbur A. Porter , Robert C. Rogers
发明人： Donald L. Parker , Wilbur A. Porter , Robert C. Rogers
IPC分类号： H01J1/13 , H01J29/46 , H01J31/12 , H01J37/06 , H01J29/70
CPC分类号： H01J1/13 , B82Y10/00 , B82Y40/00 , H01J29/46 , H01J31/128 , H01J37/06 , H01J37/3177 , H01J2237/31774
摘要： An areal array of tubular electron sources is disclosed for producing multiple directed electron beams. Sources (10) are located in a parallel array between a conductive back plate (12) at a closed end of the tubes and a conductive face plate (14) having holes therein aligned with the second open end of each of the electrode tubes (10). An electrical current source (30) is connected between the back plate (12) and face plate (14) to resistively heat each of the sources (10) to a temperature high enough for thermionic electron emission. Electron beams (34) are produced from within each of the tubular electrodes (10). Extraction means which may include a magnetic field from a coil (29) and an extraction lens (18) tends to withdraw the electrons from within the sources (10) in an intense, collimated beam (34). Beams (34) are accelerated toward a target (28) through a beam deflection unit (22) having holes (24) associated with each of the electron beams (34 ). Beam deflection plates (26) within each of the holes (24) deflect the electron beams (34) to impact selected points on a target (28).
摘要翻译：公开了一种用于产生多个定向电子束的管状电子源的面阵列。源（10）位于管的封闭端的导电背板（12）和导电面板（14）之间的平行阵列中，导电面板（14）具有与每个电极管（10）的第二开口端对准的孔）。电流源（30）连接在背板（12）和面板（14）之间，以将每个源（10）电阻加热到足够高的热电子发射温度。从每个管状电极（10）内产生电子束（34）。可以包括来自线圈（29）和提取透镜（18）的磁场的提取装置倾向于在强烈的准直光束（34）中从源（10）内撤出电子。光束（34）通过具有与每个电子束（34）相关联的孔（24）的光束偏转单元（22）朝向目标（28）加速。每个孔（24）内的光束偏转板（26）使电子束（34）偏转以冲击目标（28）上的选定点。

3. 发明授权

US4322379A Fabrication process for semiconductor bodies 失效
标题翻译：半导体器件制造工艺
公开(公告)号：US4322379A
公开(公告)日：1982-03-30
申请号：US26289
申请日：1979-04-02
申请人： Jack S. Kilby , William R. McKee , Wilbur A. Porter
发明人： Jack S. Kilby , William R. McKee , Wilbur A. Porter
IPC分类号： B22F9/08 , C30B11/00 , B01J2/02
CPC分类号： C30B29/06 , B22F9/08 , C30B11/00 , C30B29/60
摘要： A system and method is provided for forming semiconductor tear-drop shaped bodies having minimal grain boundaries. Semiconductor material is melted in a capillary tube at the top of a tower, and forced under gas pressure through a nozzle. Separate semiconductor bodies are formed. They are passed through a free fall path over which a predetermined temperature gradient controls solidification of the bodies. The resultant bodies are tear-drop semiconductor bodies of near uniform size with minimal grain boundaries.
摘要翻译：提供一种用于形成具有最小晶界的半导体泪滴形体的系统和方法。半导体材料在塔的顶部的毛细管中熔化，并在气体压力下通过喷嘴被迫。形成分离的半导体体。它们通过自由落体路径，预定的温度梯度控制物体的凝固。所得体是具有最小晶界的近均匀尺寸的泪滴半导体体。

4. 发明授权

US4100051A Light energy conversion 失效
标题翻译：光能转换
公开(公告)号：US4100051A
公开(公告)日：1978-07-11
申请号：US747022
申请日：1976-12-02
申请人： Jack S. Kilby , Jay W. Lathrop , Wilbur A. Porter
发明人： Jack S. Kilby , Jay W. Lathrop , Wilbur A. Porter
IPC分类号： F24J2/04 , C25B1/00 , H01G9/20 , H01L31/00 , H01L31/042 , H01M8/18 , H01M14/00 , C25B9/00 , H01M8/04
CPC分类号： C25B1/003 , H01G9/20 , H01L24/24 , H01L31/042 , H01L31/062 , H01M14/005 , H01M8/186 , H01L2924/12032 , Y02E10/52 , Y02E60/528 , Y02P20/134 , Y02P70/56 , Y10S204/03
摘要： Solar energy conversion is provided by a structure formed of a plurality of photovoltaic sources. An electrolyte wets the sources. Upon exposure to light the photovoltaic sources cause a current to flow in the electrolyte, producing an electrochemical reaction. The products of this reaction are collected and stored. In a preferred embodiment the electrolyte is an aqueous solution of hydrogen iodide, and the hydrogen produced by the electrochemical reaction may be stored, burned as a fuel or used in a fuel cell to produce electrical energy.
摘要翻译：太阳能转换由多个光伏源形成的结构提供。电解液润湿来源。在暴露于光照下，光伏源导致电流在电解质中流动，产生电化学反应。收集并储存该反应的产物。在优选实施方案中，电解质是碘化氢的水溶液，并且通过电化学反应产生的氢可以作为燃料储存，燃烧或用于燃料电池中以产生电能。

5. 发明授权

US4021323A Solar energy conversion 失效
标题翻译：太阳能转换
公开(公告)号：US4021323A
公开(公告)日：1977-05-03
申请号：US599473
申请日：1975-07-28
申请人： Jack S. Kilby , Jay W. Lathrop , Wilbur A. Porter
发明人： Jack S. Kilby , Jay W. Lathrop , Wilbur A. Porter
IPC分类号： F24J2/04 , C25B1/00 , H01G9/20 , H01L31/00 , H01L31/042 , H01M8/18 , H01M14/00 , C25B1/02 , H01L31/06 , C25B5/00
CPC分类号： C25B1/003 , H01G9/20 , H01L24/24 , H01L31/042 , H01L31/062 , H01M14/005 , H01M8/186 , H01L2924/12032 , Y02E10/52 , Y02E60/528 , Y02P20/134 , Y02P70/56 , Y10S204/03
摘要： Solar energy conversion is provided by a structure formed of a plurality of photovoltaic sources. An electrolyte wets the sources. Upon exposure to light the photovoltaic sources cause a current to flow in the electrolyte producing an electrochemical reaction. The products of this reaction may then be collected and stored. In a preferred embodiment the electrolyte is an aqueous solution of hydrogen iodide, and the hydrogen produced by the electrochemical reaction may be stored, burned as a fuel or used in a fuel cell to produce electrical energy.
摘要翻译：太阳能转换由多个光伏源形成的结构提供。电解液润湿来源。在暴露于光照下，光电源导致电流在电解液中流动，产生电化学反应。然后可以收集和储存该反应的产物。在优选实施方案中，电解质是碘化氢的水溶液，并且通过电化学反应产生的氢可以作为燃料储存，燃烧或用于燃料电池中以产生电能。

6. 发明授权

US4188177A System for fabrication of semiconductor bodies 失效
标题翻译：半导体器件制造系统
公开(公告)号：US4188177A
公开(公告)日：1980-02-12
申请号：US766223
申请日：1977-02-07
申请人： Jack S. Kilby , William R. McKee , Wilbur A. Porter
发明人： Jack S. Kilby , William R. McKee , Wilbur A. Porter
IPC分类号： B22F9/08 , C30B11/00 , C30B29/60 , H01L21/208 , H01L31/04 , B29C23/00
CPC分类号： C30B29/06 , B22F9/08 , C30B11/00 , C30B29/60
摘要： A system and method is provided for forming semiconductor tear-drop shaped bodies having minimal grain boundaries. Semiconductor material is melted in a capillary tube at the top of a tower, and forced under gas pressure through a nozzle. Separate semiconductor bodies are formed. They are passed through a free fall path over which a predetermined temperature gradient controls solidification of the bodies. The resultant bodies are tear-drop semiconductor bodies of near uniform size with minimal grain boundaries.
摘要翻译：提供一种用于形成具有最小晶界的半导体泪滴形体的系统和方法。半导体材料在塔的顶部的毛细管中熔化，并在气体压力下通过喷嘴被迫。形成分离的半导体体。它们通过自由落体路径，预定的温度梯度控制物体的凝固。所得体是具有最小晶界的近均匀尺寸的泪滴半导体体。

7. 发明授权

US4438557A Method of using an areal array of tubular electron sources 失效
标题翻译：使用管状电子源的面阵列的方法
公开(公告)号：US4438557A
公开(公告)日：1984-03-27
申请号：US343023
申请日：1982-01-27
申请人： Donald L. Parker , Wilbur A. Porter , Robert C. Rogers
发明人： Donald L. Parker , Wilbur A. Porter , Robert C. Rogers
IPC分类号： H01J1/13 , H01J29/46 , H01J31/12 , H01J37/06 , G01N23/00 , H01J37/00
CPC分类号： H01J1/13 , B82Y10/00 , B82Y40/00 , H01J29/46 , H01J31/128 , H01J37/06 , H01J37/3177 , H01J2237/061
摘要： An areal array of tubular electron sources is disclosed for producing multiple directed electron beams. Sources (10) are located in a parallel array between a conductive back plate (12) at a closed end of the tubes and a conductive face plate (14) having holes therein aligned with the second open end of each of the electrode tubes (10). An electrical current source (30) is connected between the back plate (12) and face plate (14) to resistively heat each of the sources (10) to a temperature high enough for thermionic electron emission. Electron beams (34) are produced from within each of the tubular electrodes (10). Extraction means which may include a magnetic field from a coil (29) and an extraction lens (18) tends to withdraw the electrons from within the sources (10) in an intense, collimated beam (34). Beams (34) are accelerated toward a target (28) through a beam deflection unit (22) having holes (24) associated with each of the electron beams (34 ). Beam deflection plates (26) within each of the holes (24) deflect the electron beams (34) to impact selected points on a target (28).
摘要翻译：公开了一种用于产生多个定向电子束的管状电子源的面阵列。源（10）位于管的封闭端的导电背板（12）和导电面板（14）之间的平行阵列中，导电面板（14）具有与每个电极管（10）的第二开口端对准的孔）。电流源（30）连接在背板（12）和面板（14）之间，以将每个源（10）电阻加热到足够高的热电子发射温度。从每个管状电极（10）内产生电子束（34）。可以包括来自线圈（29）和提取透镜（18）的磁场的提取装置倾向于在强烈的准直光束（34）中从源（10）内撤出电子。光束（34）通过具有与每个电子束（34）相关联的孔（24）的光束偏转单元（22）朝向目标（28）加速。每个孔（24）内的光束偏转板（26）使电子束（34）偏转以冲击目标（28）上的选定点。

8. 再颁专利

USRE31473E System for fabrication of semiconductor bodies 失效
标题翻译：半导体器件制造系统
公开(公告)号：USRE31473E
公开(公告)日：1983-12-27
申请号：US354015
申请日：1982-03-02
申请人： Jack S. Kilby , William R. McKee , Wilbur A. Porter
发明人： Jack S. Kilby , William R. McKee , Wilbur A. Porter
IPC分类号： B22F9/08 , C30B11/00
CPC分类号： C30B29/06 , B22F9/08 , C30B11/00 , C30B29/60
摘要： A system and method is provided for forming semiconductor tear-drop shaped bodies having minimal grain boundaries. Semiconductor material is melted in a capillary tube at the top of a tower, and forced under gas pressure through a nozzle. Separate semiconductor bodies are formed. They are passed through a free fall path over which a predetermined temperature gradient controls solidification of the bodies. The resultant bodies are tear-drop semiconductor bodies of near uniform size with minimal grain boundaries.

9. 发明授权

US4078175A Apparatus for use in examining the lattice of a semiconductor wafer by X-ray diffraction 失效
$Apparatus for use in examining the lattice of a semiconductor wafer by X-ray diffraction$
标题翻译：用于通过X射线衍射检查半导体晶片的晶格的装置
公开(公告)号：US4078175A
公开(公告)日：1978-03-07
申请号：US724874
申请日：1976-09-20
申请人： James C. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Fletcher , Donald L. Parker , Wilbur A. Porter
发明人： James C. Administrator of the National Aeronautics and Space Administration, with respect to an invention of Fletcher , Donald L. Parker , Wilbur A. Porter
IPC分类号： G01N23/20
CPC分类号： G01N23/20008 , G01N2223/0561 , G01N2223/415 , G01N2223/607 , G01N2223/6116 , G01N2223/646
摘要： An improved apparatus for examining the crystal lattice of a semiconductor wafer utilizing x-ray diffraction techniques. The apparatus is employed in a method which includes the step of recording the image of a wafer supported in a bent configuration conforming to a compound curve, produced through the use of a vaccum chuck provided for an x-ray camera while the entire surface thereof is illuminated simultaneously by a beam of incident x-rays which are projected from a distant point-source and satisfy conditions of the Bragg Law for all points on the surface of the wafer.
摘要翻译：一种改进的利用X射线衍射技术检查半导体晶片的晶格的装置。该装置采用的方法包括以下步骤：记录以与通过使用设置在x射线照相机上的真空吸盘制成的弯曲构型相一致的复合曲线的晶片的图像，其整个表面是通过从远点源投影的入射x射线束同时照射，并满足晶片表面上所有点的布拉格定律条件。

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