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    • 3. 发明授权
    • Process for producing thin film transistor having LDD region
    • 具有LDD区域的薄膜晶体管的制造方法
    • US07678627B2
    • 2010-03-16
    • US11435333
    • 2006-05-16
    • An ShihChao-Yu MengWen Yuan Guo
    • An ShihChao-Yu MengWen Yuan Guo
    • H01L21/00H01L21/84
    • H01L27/1214G02F1/13454H01L27/124H01L27/127H01L29/78621Y10S257/911
    • In a process for producing a TFT display, a polysilicon layer is patterned to define a first and a second TFT regions. A first doping material is implanted into a first exposed portion in the first TFT region to define a first doped region and a first channel region, and implanted into a second exposed portion in the second TFT region to define a second doped region and a second channel region. A second doping material is implanted into a third exposed portion smaller than the first exposed portion to form first source/drain regions and simultaneously define a first LDD region in the first TFT region. A first and a second gate structures are formed over the first and the second channel regions, respectively. In a certain direction, the first gate structure is longer than the first channel, and the second gate structure isn't longer than the second channel region.
    • 在制造TFT显示器的工艺中,对多晶硅层进行构图以限定第一和第二TFT区域。 将第一掺杂材料注入到第一TFT区域中的第一暴露部分中以限定第一掺杂区域和第一沟道区域,并且注入到第二TFT区域中的第二暴露部分中以限定第二掺杂区域和第二沟道 地区。 将第二掺杂材料注入到比第一暴露部分小的第三暴露部分中,以形成第一源极/漏极区域,同时限定第一TFT区域中的第一LDD区域。 第一和第二栅极结构分别形成在第一和第二沟道区上。 在一定方向上,第一栅极结构比第一沟道长,第二栅极结构不比第二沟道区长。
    • 5. 发明授权
    • Thin film transistor having LDD region and process for producing same
    • 具有LDD区域的薄膜晶体管及其制造方法
    • US07098492B2
    • 2006-08-29
    • US10782533
    • 2004-02-19
    • An ShihChao-Yu MengWen Yuan Guo
    • An ShihChao-Yu MengWen Yuan Guo
    • H01L31/062
    • H01L27/1214G02F1/13454H01L27/124H01L27/127H01L29/78621Y10S257/911
    • A thin film transistor display includes a driving circuit and an active matrix. The driving circuit comprises a first thin film transistor structure. The first thin film transistor structure includes a first gate, source and drain regions, a first LDD region, a second LDD region and a first channel region between the first and the second LDD regions. The first gate region is disposed over the first channel region, and partially or completely overlies the first and the second LDD regions. The active matrix is controlled by the driving circuit and comprises a second thin film transistor structure. The second thin film transistor structure includes a second gate, source and drain regions, a third LDD region, a fourth LDD region and a second channel region between the third and the fourth LDD regions. The second gate region is disposed over the second channel region and substantially overlaps with neither of the first and the second LDD regions.
    • 薄膜晶体管显示器包括驱动电路和有源矩阵。 驱动电路包括第一薄膜晶体管结构。 第一薄膜晶体管结构包括第一栅极,源极和漏极区域,第一LDD区域,第二LDD区域和第一和第二LDD区域之间的第一沟道区域。 第一栅极区域设置在第一沟道区域上,并且部分或完全覆盖第一和第二LDD区域。 有源矩阵由驱动电路控制并且包括第二薄膜晶体管结构。 第二薄膜晶体管结构包括第三栅极,源极和漏极区域,第三LDD区域,第四LDD区域和第三和第四LDD区域之间的第二沟道区域。 第二栅极区域设置在第二沟道区域上并且基本上与第一和第二LDD区域中的任一个重叠。