会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Organic light emitting diode touch display
    • 有机发光二极管触摸显示屏
    • US08674964B2
    • 2014-03-18
    • US12830253
    • 2010-07-02
    • Jung-yen HuangAn-thung ChoShih-feng HsuWei-pang HuangChia-tien Peng
    • Jung-yen HuangAn-thung ChoShih-feng HsuWei-pang HuangChia-tien Peng
    • G06F3/042
    • G06F3/042G06F3/0412
    • An OLED display is proposed. The OLED display includes a gate driver for generating a scanning signal, a source driver for generating a data signal, and a plurality of cells arranged in an array. Each cell includes a first transistor for delivering the data signal when receiving the scanning signal, a second transistor for generating a driving current based on a voltage difference between a first supply voltage signal and the data signal, a storage capacitor coupled between the first transistor and an output end of the driving circuit, for storing the data signal, an organic light emitting diode for generating light based on the driving current, an infrared emitting layer for producing infrared ray, and an infrared sensitive layer for sensing the infrared ray reflected by an object.
    • 提出了OLED显示器。 OLED显示器包括用于产生扫描信号的栅极驱动器,用于产生数据信号的源极驱动器和排列成阵列的多个单元。 每个单元包括用于在接收扫描信号时传送数据信号的第一晶体管,用于基于第一电源电压信号和数据信号之间的电压差产生驱动电流的第二晶体管,耦合在第一晶体管和第二晶体管之间的存储电容器 用于存储数据信号的驱动电路的输出端,用于基于驱动电流产生光的有机发光二极管,用于产生红外线的红外发射层,以及用于感测由红外线反射的红外线的红外线敏感层 目的。
    • 3. 发明申请
    • THIN FILM DEVICES FOR FLAT PANEL DISPLAYS AND METHODS FOR FORMING THE SAME
    • 用于平板显示器的薄膜装置及其形成方法
    • US20070238231A1
    • 2007-10-11
    • US11760824
    • 2007-06-11
    • Wei-Pang HuangChun-Huai LiYun-Sheng Chen
    • Wei-Pang HuangChun-Huai LiYun-Sheng Chen
    • H01L21/336
    • H01L27/127H01L27/1214
    • Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.
    • 在包括驱动器电路区域和像素区域的衬底上形成具有不同电特性的薄膜器件的方法。 分别在驱动电路区域和衬底的像素区域上形成第一和第二多晶硅图案层。 使用覆盖第一多晶硅图案层的掩模层作为注入掩模在第二多晶硅图案层上执行第一离子注入,使得第一多晶硅图案层具有与第二多晶硅图案层不同的杂质浓度。 在去除掩模层之后,在第一和第二多晶硅图案层中的每一个上依次形成栅极电介质层和栅极,随后在第一和第二多晶硅图案层中的每一个中形成源极/漏极区域以限定沟道 区域。
    • 4. 发明授权
    • Thin film devices for flat panel displays and methods for forming the same
    • 用于平板显示器的薄膜装置及其形成方法
    • US07268367B2
    • 2007-09-11
    • US10992278
    • 2004-11-18
    • Wei-Pang HuangChun-Huai LiYun-Sheng Chen
    • Wei-Pang HuangChun-Huai LiYun-Sheng Chen
    • H01L29/786
    • H01L27/127H01L27/1214
    • Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.
    • 在包括驱动器电路区域和像素区域的衬底上形成具有不同电特性的薄膜器件的方法。 分别在驱动电路区域和衬底的像素区域上形成第一和第二多晶硅图案层。 使用覆盖第一多晶硅图案层的掩模层作为注入掩模在第二多晶硅图案层上执行第一离子注入,使得第一多晶硅图案层具有与第二多晶硅图案层不同的杂质浓度。 在去除掩模层之后,在第一和第二多晶硅图案层中的每一个上依次形成栅极电介质层和栅极,随后在第一和第二多晶硅图案层中的每一个中形成源极/漏极区域以限定沟道 区域。
    • 7. 发明授权
    • Method for electro-luminescent display fabrication
    • 电致发光显示器制造方法
    • US07211456B2
    • 2007-05-01
    • US10888692
    • 2004-07-09
    • Hsin-Hung LeeWei-Pang HuangChun-Hsiun Chen
    • Hsin-Hung LeeWei-Pang HuangChun-Hsiun Chen
    • H01L21/00
    • H01L27/3244H01L51/56
    • The present invention discloses a method for fabricating a pixel area of an electro-luminescent display device. At least one buffer layer is formed on a substrate. An etch stop layer is formed on the buffer layer. At least one intermediate layer is formed over the etch stop layer. The intermediate layer is etched to expose the etch stop layer, which has an etch rate substantially selective against that of the intermediate layer. The etch stop layer is etched to expose the buffer layer, which has an etch rate substantially selective against that of the etch stop layer, thereby improving an level uniformity of the exposed buffer layer.
    • 本发明公开了一种制造电致发光显示装置的像素区域的方法。 在基板上形成至少一个缓冲层。 在缓冲层上形成蚀刻停止层。 在蚀刻停止层上形成至少一个中间层。 蚀刻中间层以暴露蚀刻停止层,蚀刻停止层的蚀刻速率基本上相对于中间层的蚀刻速率选择。 蚀刻停止层被蚀刻以暴露缓冲层,该缓冲层的蚀刻速率基本上相对于蚀刻停止层的蚀刻速率选择,从而提高了暴露的缓冲层的水平均匀性。
    • 8. 发明申请
    • Scanning device having two sloped surfaces
    • 具有两个倾斜表面的扫描装置
    • US20070019253A1
    • 2007-01-25
    • US11488607
    • 2006-07-19
    • Wei-Pang Huang
    • Wei-Pang Huang
    • H04N1/04
    • H04N1/04H04N2201/0434
    • A scanning device includes a base, a transparent platen above the base, a left sloped plate connecting a left platen edge of the transparent platen to a left base edge of the base, a right sloped plate connecting a right platen edge of the transparent platen to a right base edge of the base, and a scanning module below the transparent platen. The left sloped plate and the right sloped plate are disposed at two opposite sides of the transparent platen. A left angle between the left sloped plate and the transparent platen and a right angle between the right sloped plate and the transparent platen are greater than 90 degrees. The scanning module is movable along a direction parallel to the right platen edge and the left platen edge so as to acquire an image of a document placed on the transparent platen.
    • 扫描装置包括基座,基座上方的透明压板,将透明压板的左压板边缘连接到基座的左基底边缘的左倾斜板,连接透明压板的右压板边缘的右倾斜板 基座的右基座边缘和透明压板下方的扫描模块。 左倾斜板和右倾斜板设置在透明压板的两个相对侧。 左倾斜板和透明压板之间的左角和右倾斜板与透明压板之间的直角大于90度。 扫描模块可以沿着平行于右压板边缘和左压板边缘的方向移动,以获取放置在透明压板上的原稿的图像。
    • 10. 发明申请
    • THIN FILM DEVICES FOR FLAT PANEL DISPLAYS AND METHODS FOR FORMING THE SAME
    • 用于平板显示器的薄膜装置及其形成方法
    • US20100136730A1
    • 2010-06-03
    • US12702477
    • 2010-02-09
    • Wei-Pang HuangChun-Huai LiYun-Sheng Chen
    • Wei-Pang HuangChun-Huai LiYun-Sheng Chen
    • H01L21/28
    • H01L27/127H01L27/1214
    • Methods of forming thin film devices with different electrical characteristics on a substrate comprising a driver circuit region and a pixel region. A first and a second polysilicon pattern layers are formed on the driving circuit region and the pixel region of the substrate, respectively. A first ion implantation is performed on the second polysilicon pattern layer using a masking layer covering the first polysilicon pattern layer as an implant mask, such that the first polysilicon pattern layer has an impurity concentration different from the second polysilicon pattern layer. After removal of the masking layer, a gate dielectric layer and a gate are successively formed on each of the first and second polysilicon pattern layers and a source/drain region is subsequently formed in each of the first and second polysilicon pattern layers to define a channel region therein.
    • 在包括驱动器电路区域和像素区域的衬底上形成具有不同电特性的薄膜器件的方法。 分别在驱动电路区域和衬底的像素区域上形成第一和第二多晶硅图案层。 使用覆盖第一多晶硅图案层的掩模层作为注入掩模在第二多晶硅图案层上执行第一离子注入,使得第一多晶硅图案层具有与第二多晶硅图案层不同的杂质浓度。 在去除掩模层之后,在第一和第二多晶硅图案层中的每一个上依次形成栅极电介质层和栅极,随后在第一和第二多晶硅图案层中的每一个中形成源极/漏极区域以限定沟道 区域。