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1. 发明申请

US20130113873A1 VIDEO CONFERENCE SYSTEM 有权
标题翻译：视频会议系统
公开(公告)号：US20130113873A1
公开(公告)日：2013-05-09
申请号：US13557668
申请日：2012-07-25
申请人： Chia-Yuan Chang , Chun-Hsiung Fang , Chih-Yin Lin , Ting-Han Huang , Wei-Ting Kuo , Yu-Hsing Lin , Kuo-Chung Hsu , Chen-Hsuan Weng
发明人： Chia-Yuan Chang , Chun-Hsiung Fang , Chih-Yin Lin , Ting-Han Huang , Wei-Ting Kuo , Yu-Hsing Lin , Kuo-Chung Hsu , Chen-Hsuan Weng
IPC分类号： H04N7/14
CPC分类号： H04N7/15 , H04L12/1813 , H04L65/4053 , H04L65/602 , H04L65/607
摘要： A video conference method, applied to a video conference system in a multi-way conference is provided. The video conference method includes: retrieving a first number of a plurality of terminals of the multi-way conference; determining whether at least one other terminal is requiring to join in on the multi-way conference; when the at least one other terminal is requiring to join in on the multi-way conference, increasing the first number of the terminals of the multi-way conference to a second number of the terminals; and determining a resolution of the video signal captured and transmitted by the video conference system according to the second number of the terminals. A video conference system using the video conference method, is also provided.
摘要翻译：提供了一种应用于多方会议视频会议系统的视频会议方式。视频会议方法包括：检索多路会议的多个终端的第一号码; 确定至少一个其他终端是否要求在多路会议上加入; 当所述至少一个其他终端要求在所述多路通话中加入时，将所述多方会议的终端的第一数量增加到第二数量的终端; 以及根据所述第二数量的终端确定由所述视频会议系统捕获和发送的视频信号的分辨率。还提供了使用视频会议方法的视频会议系统。

2. 发明申请

US20090271113A1 METHOD FOR MODIFYING NAVIGATION INFORMATION AND NAVIGATION APPARATUS USING THE SAME 审中-公开
标题翻译：用于修改导航信息的方法和使用该导航信息的导航装置
公开(公告)号：US20090271113A1
公开(公告)日：2009-10-29
申请号：US12129051
申请日：2008-05-29
申请人： SHYANG-JYE CHANG , Yung-yu Chen , Wei-ting Kuo
发明人： SHYANG-JYE CHANG , Yung-yu Chen , Wei-ting Kuo
IPC分类号： G01C21/28 , G01C21/00
CPC分类号： G01C21/3415 , G01C21/165
摘要： A method for modifying navigation information for guiding the driver is provided in the present invention, in which attitude angle of a carrier at a specific location is detected and compared with an identifying information for judging whether the carrier is on a correct route or not. In another embodiment, the present invention further provides a navigation apparatus according the foregoing method, which comprises an inertia navigation unit, a satellite signal receiving unit, a database, and signal processing unit. The signal processing unit generates a navigation route in accordance with the start and destination and determines whether the attitude angle is conformed to the identifying information with respect to the specific location on the navigation route. If the attitude angle is not conformed to the identifying information, the signal processing unit remodifies the navigation route for the carrier.
摘要翻译：在本发明中提供了一种用于修改用于引导驾驶员的导航信息的方法，其中检测到特定位置处的载波的姿态角，并将其与用于判断载体是否处于正确路线的识别信息进行比较。在另一实施例中，本发明还提供一种根据前述方法的导航装置，其包括惯性导航单元，卫星信号接收单元，数据库和信号处理单元。信号处理单元根据开始和目的地生成导航路线，并且确定姿态角度是否符合关于导航路线上的特定位置的识别信息。如果姿态角度不符合识别信息，则信号处理单元重新构建载体的导航路线。

3. 发明授权

US07538396B2 Semiconductor device and complementary metal-oxide-semiconductor field effect transistor 有权
标题翻译：半导体器件和互补金属氧化物半导体场效应晶体管
公开(公告)号：US07538396B2
公开(公告)日：2009-05-26
申请号：US11624693
申请日：2007-01-19
申请人： Shih-Kuei Ma , Chung-Yeh Lee , Chun-Ying Yeh , Wei-Ting Kuo
发明人： Shih-Kuei Ma , Chung-Yeh Lee , Chun-Ying Yeh , Wei-Ting Kuo
IPC分类号： H01L27/092
CPC分类号： H01L27/0921 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L27/0928 , H01L29/1083 , H01L29/1087 , H01L29/7835
摘要： A semiconductor device includes a substrate, an epitaxial layer, a sinker, an active device, a first buried layer, and a second buried layer. The substrate has a first type conductivity. The epitaxial layer has a second type conductivity, and is located on the substrate. The sinker has the second type conductivity, and is located in the epitaxial layer. The sinker extends from the substrate to an upper surface of the epitaxial layer, and partitions a region off from the epitaxial layer. The active device is located within the region. The first buried layer has the first type conductivity, and is located between the region and the substrate. The second buried layer has the second type conductivity, and is located between the first buried layer and the substrate. The second buried layer connects with the sinker. Because of the above-mentioned configuration, latch-up can be prevented.
摘要翻译：半导体器件包括衬底，外延层，沉降片，有源器件，第一掩埋层和第二掩埋层。衬底具有第一类型的导电性。外延层具有第二类型的导电性，并且位于基板上。沉降片具有第二类型的导电性，并且位于外延层中。沉降片从衬底延伸到外延层的上表面，并且将区域从外延层分隔开。有源设备位于该区域内。第一掩埋层具有第一类型的导电性，并且位于区域和衬底之间。第二掩埋层具有第二类型的导电性，并且位于第一埋层和衬底之间。第二埋层与沉降片连接。由于上述结构，可以防止闩锁。

4. 发明授权

US09088690B2 Video conference system 有权
标题翻译：视频会议系统
公开(公告)号：US09088690B2
公开(公告)日：2015-07-21
申请号：US13557668
申请日：2012-07-25
申请人： Chia-Yuan Chang , Chun-Hsiung Fang , Chih-Yin Lin , Ting-Han Huang , Wei-Ting Kuo , Yu-Hsing Lin , Kuo-Chung Hsu , Chen-Hsuan Weng
发明人： Chia-Yuan Chang , Chun-Hsiung Fang , Chih-Yin Lin , Ting-Han Huang , Wei-Ting Kuo , Yu-Hsing Lin , Kuo-Chung Hsu , Chen-Hsuan Weng
IPC分类号： H04N7/14 , H04N7/15 , H04L29/06 , H04L12/18
CPC分类号： H04N7/15 , H04L12/1813 , H04L65/4053 , H04L65/602 , H04L65/607
摘要： A video conference method, applied to a video conference system in a multi-way conference is provided. The video conference method includes: retrieving a first number of a plurality of terminals of the multi-way conference; determining whether at least one other terminal is requiring to join in on the multi-way conference; when the at least one other terminal is requiring to join in on the multi-way conference, increasing the first number of the terminals of the multi-way conference to a second number of the terminals; and determining a resolution of the video signal captured and transmitted by the video conference system according to the second number of the terminals. A video conference system using the video conference method, is also provided.
摘要翻译：提供了一种应用于多方会议视频会议系统的视频会议方式。视频会议方法包括：检索多路会议的多个终端的第一号码; 确定至少一个其他终端是否要求在多路会议上加入; 当所述至少一个其他终端要求在所述多路通话中加入时，将所述多方会议的终端的第一数量增加到第二数量的终端; 以及根据所述第二数量的终端确定由所述视频会议系统捕获和发送的视频信号的分辨率。还提供了使用视频会议方法的视频会议系统。

5. 发明申请

US20080173948A1 SEMICONDUCTOR DEVICE AND COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR FIELD EFFECT TRANSISTOR 有权
标题翻译：半导体器件和补充金属氧化物半导体场效应晶体管
公开(公告)号：US20080173948A1
公开(公告)日：2008-07-24
申请号：US11624693
申请日：2007-01-19
申请人： Shih-Kuei Ma , Chung-Yeh Lee , Chun-Ying Yeh , Wei-Ting Kuo
发明人： Shih-Kuei Ma , Chung-Yeh Lee , Chun-Ying Yeh , Wei-Ting Kuo
IPC分类号： H01L27/092
CPC分类号： H01L27/0921 , H01L21/823814 , H01L21/823878 , H01L21/823892 , H01L27/0928 , H01L29/1083 , H01L29/1087 , H01L29/7835
摘要： A semiconductor device includes a substrate, an epitaxial layer, a sinker, an active device, a first buried layer, and a second buried layer. The substrate has a first type conductivity. The epitaxial layer has a second type conductivity, and is located on the substrate. The sinker has the second type conductivity, and is located in the epitaxial layer. The sinker extends from the substrate to an upper surface of the epitaxial layer, and partitions a region off from the epitaxial layer. The active device is located within the region. The first buried layer has the first type conductivity, and is located between the region and the substrate. The second buried layer has the second type conductivity, and is located between the first buried layer and the substrate. The second buried layer connects with the sinker. Because of the above-mentioned configuration, latch-up can be prevented.
摘要翻译：半导体器件包括衬底，外延层，沉降片，有源器件，第一掩埋层和第二掩埋层。衬底具有第一类型的导电性。外延层具有第二类型的导电性，并且位于基板上。沉降片具有第二类型的导电性，并且位于外延层中。沉降片从衬底延伸到外延层的上表面，并且将区域从外延层分隔开。有源设备位于该区域内。第一掩埋层具有第一类型的导电性，并且位于区域和衬底之间。第二掩埋层具有第二类型的导电性，并且位于第一埋层和衬底之间。第二埋层与沉降片连接。由于上述结构，可以防止闩锁。

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