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1. 发明授权

US07622372B1 Method for shallow dopant distribution 失效
标题翻译：浅掺杂剂分布方法
公开(公告)号：US07622372B1
公开(公告)日：2009-11-24
申请号：US11518755
申请日：2006-09-11
申请人： Wei-Kan Chu , Lin Shao
发明人： Wei-Kan Chu , Lin Shao
IPC分类号： H01L21/04 , H01L21/425
CPC分类号： H01L21/2254 , H01L21/2257 , H01L21/263 , H01L21/26506 , H01L21/26513 , H01L29/34
摘要： Vacancies and dopant ions are introduced near the surface of a semiconductor layer structure. Implanted dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.
摘要翻译：在半导体层结构的表面附近引入空位和掺杂离子。通过间隙机制扩散的注入掺杂剂离子的扩散率大大降低，这导致非常低的电阻率掺杂区域和非常浅的结。

2. 发明授权

US06251835B1 Surface planarization of high temperature superconductors 失效
标题翻译：高温超导体的表面平面化
公开(公告)号：US06251835B1
公开(公告)日：2001-06-26
申请号：US09073786
申请日：1998-05-06
申请人： Wei-Kan Chu , Judy Z. Wu
发明人： Wei-Kan Chu , Judy Z. Wu
IPC分类号： B05D100
CPC分类号： B82Y15/00 , C30B29/22 , C30B29/225 , C30B31/22 , C30B33/00 , H01L39/2464
摘要： Planarizing High Temperature Superconductor (HTS) surfaces, especially HTS thin film surfaces is crucial for HTS thin film device processing. Disclosed is a method of surface planarization for HTS film. The method includes first smoothing the HTS surface by Gas Cluster Ion Beam bombardment, followed by annealing in partial pressure of oxygen to regrow the damaged surface layer. A rough HTS surface can be planarized down to a smoothness with a standard deviation of one nanometer or better.
摘要翻译：平面化高温超导体（HTS）表面，特别是HTS薄膜表面对于HTS薄膜器件处理至关重要。公开了一种用于HTS膜的表面平面化方法。该方法包括首先通过气体束离子束轰击使HTS表面平滑，然后在分压氧中退火以再生损坏的表面层。粗糙的HTS表面可以平坦化到平滑度，标准偏差为一纳米或更好。

3. 发明授权

US5947237A Magnet-superconductor systems for controlling and influencing relative motion 失效
标题翻译：用于控制和影响相对运动的磁 - 超导体系统
公开(公告)号：US5947237A
公开(公告)日：1999-09-07
申请号：US521300
申请日：1995-08-29
申请人： Chase K. McMichael , Ki-Bui Ma , Wei-Kan Chu
发明人： Chase K. McMichael , Ki-Bui Ma , Wei-Kan Chu
IPC分类号： F16C39/06 , F16F6/00 , F16F15/03 , H02K49/10 , H02N15/04 , F16F9/36
CPC分类号： F16C32/0438 , F16F15/03 , H02K49/10 , H02N15/04
摘要： Disclosed are devices for influencing and/or controlling relative motion between members, such as vibration damping or absorbing devices, clutches and brakes. The devices comprise a magnet on one member and a field cooled superconductor on the other member. The devices utilize the interaction of the magnetic field of the magnet as it moves through the pinned flux in the superconductor to either influence or control relative motion.
摘要翻译：公开了用于影响和/或控制构件之间的相对运动的装置，例如减振或吸收装置，离合器和制动器。这些装置包括一个构件上的磁体和另一个构件上的场冷却的超导体。这些装置利用磁体的磁场在超导体中的固定磁通的作用，以影响或控制相对运动。

4. 发明授权

US5542506A Magnet-superconductor systems for controlling and influencing relative motion 失效
公开(公告)号：US5542506A
公开(公告)日：1996-08-06
申请号：US802090
申请日：1991-12-03
申请人： Chase K. McMichael , Ki-Bui Ma , Wei-Kan Chu
发明人： Chase K. McMichael , Ki-Bui Ma , Wei-Kan Chu
IPC分类号： F16C39/06 , F16F6/00 , F16F15/03 , H02K49/10 , H02N15/04 , F16F9/36
CPC分类号： F16C32/0438 , F16F15/03 , H02K49/10 , H02N15/04
摘要： Disclosed are devices for influencing and/or controlling relative motion between members, such as vibration damping or absorbing devices, clutches and brakes. The devices comprise a magnet on one member and a field cooled superconductor on the other member. The devices utilize the interaction of the magnetic field of the magnet as it moves through the pinned flux in the superconductor to either influence or control relative motion.

5. 发明授权

US4452645A Method of making emitter regions by implantation through a non-monocrystalline layer 失效
标题翻译：通过非单晶层注入制造发射极区域的方法
公开(公告)号：US4452645A
公开(公告)日：1984-06-05
申请号：US242961
申请日：1981-03-12
申请人： Wei-Kan Chu , Ingrid E. Magdo , Hans S. Rupprecht
发明人： Wei-Kan Chu , Ingrid E. Magdo , Hans S. Rupprecht
IPC分类号： H01L21/265 , H01L21/324 , H01L29/08 , H01L21/225
CPC分类号： H01L29/0804 , H01L21/265 , H01L21/324 , Y10S148/039 , Y10S148/047 , Y10S148/117 , Y10S148/124
摘要： A transistor structure is provided with an emitter which is formed from non-monocrystalline silicon which is caused to be converted to monocrystalline silicon during the manufacture of the transistor. In the process of manufacturing the present semiconductor structure, a subcollector is formed in a semiconductor substrate. The subcollector dopant out diffuses into a subsequently deposited epitaxial layer. A base region is formed in the epitaxial layer of a conductivity type opposite that of the conductivity type of the subcollector. This results in a PN junction between the base region and the out diffused subcollector impurities forming the collector of the transistor.A layer of non-monocrystalline silicon is deposited on the epitaxial layer. At least a portion of the non-monocrystalline silicon forms a precursor for an emitter region which is contiguous to but vertically displaced from the surface of the base region. The emitter precursor is then bombarded with ions of a conductivity type that is the same as the conductivity type of the subcollector. The ion bombardment is at a dose and energy level sufficient to displace a portion of the Gaussian distribution of the ions across the interface between the non-monocrystalline layer and the epitaxial layer and into the base region. Thereafter, the structure is annealed by suitable means to drive a portion of the ions deeper into the base region and to convert the non-monocrystalline silicon of the emitter precursor into a monocrystalline emitter region.
摘要翻译：晶体管结构设置有由非单晶硅形成的发射极，其在晶体管的制造期间被引入单晶硅。在制造本半导体结构的过程中，在半导体衬底中形成子集电极。子集电极掺杂剂扩散到随后沉积的外延层中。在与子集电极的导电类型相反的导电类型的外延层中形成基极区。这导致形成晶体管的集电极的基极区域和出射扩散的子集电极杂质之间的PN结。一层非单晶硅沉积在外延层上。非单晶硅的至少一部分形成与基底区域的表面相邻但垂直移位的发射极区域的前体。然后用与子集电极的导电类型相同的导电类型的离子轰击发射体前体。离子轰击处于足以将离子的高斯分布的一部分移动穿过非单晶层和外延层之间的界面并进入基极区域的剂量和能级。此后，通过合适的方式对该结构进行退火以将一部分离子驱动到基极区域中，并将发射极前体的非单晶硅转换为单晶发射极区域。

6. 发明授权

US4408254A Thin film capacitors 失效
标题翻译：薄膜电容器
公开(公告)号：US4408254A
公开(公告)日：1983-10-04
申请号：US322360
申请日：1981-11-18
申请人： Wei-Kan Chu , James K. Howard
发明人： Wei-Kan Chu , James K. Howard
IPC分类号： C01G23/00 , C23C14/48 , H01B3/00 , H01G4/10 , H01G4/12 , H01G4/33 , H01G4/20
CPC分类号： H01G4/1218
摘要： A capacitor is formed by placing between two electodes a thin film of amorphous titanate which has been ion implanted with noble gas ions.
摘要翻译：通过在两个电极之间放置已经用惰性气体离子离子注入的非晶钛酸盐薄膜来形成电容器。

7. 发明授权

US4307132A Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer 失效
标题翻译：通过沉积氧化铝扩散阻挡层在半导体衬底上制造接触的方法
公开(公告)号：US4307132A
公开(公告)日：1981-12-22
申请号：US92114
申请日：1979-11-07
申请人： Wei-Kan Chu , James K. Howard , James F. White
发明人： Wei-Kan Chu , James K. Howard , James F. White
IPC分类号： H01L21/285 , H01L21/60 , H01L21/768 , H01L23/532
CPC分类号： H01L24/11 , H01L21/28537 , H01L21/76841 , H01L23/53223 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01018 , H01L2924/01019 , H01L2924/0102 , H01L2924/01022 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/0104 , H01L2924/01047 , H01L2924/01059 , H01L2924/01064 , H01L2924/0107 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01105 , H01L2924/01322 , H01L2924/014 , H01L2924/12032 , H01L2924/14 , H01L2924/19043
摘要： Thin film structures comprising a layer of aluminum and a material having a tendency to interact with aluminum are separated by an intermediate layer of aluminum having a high aluminum oxide content. The intermediate layer prevents said interaction by acting as a diffusion barrier.Preferred embodiments are directed to silicon semiconductor metallization structures, including Schottky barrier contacts, which comprise a bottom layer of tantalum, or other transition metal, or a metal silicide in contact with a silicon substrate, an intermediate layer of aluminum having a high aluminum oxide content and a top layer of aluminum. The intermediate layer functions as a diffusion barrier between aluminum and the metal, metal silicide or silicon. The preferred embodiments of the invention also includes the process for forming such structures preferably comprising: depositing pure tantalum under high vacuum in evaporation apparatus, substituting aluminum for tantalum in the evaporation apparatus and bleeding-in water, air or oxygen to form the aluminum oxide-rich intermediate aluminum layer and then returning to the high vacuum to deposit pure aluminum. The invention is also applicable to FET or CCD structures where a diffusion barrier for aluminum is required.
摘要翻译：包含铝层和具有与铝相互作用的倾向的材料的薄膜结构由具有高氧化铝含量的铝的中间层分离。中间层通过充当扩散阻挡层来防止所述相互作用。优选实施例涉及包括钽底部的其他过渡金属或与硅衬底接触的金属硅化物的硅肖特基势垒触点的硅半导体金属化结构，具有高氧化铝含量的铝的中间层和顶层铝。中间层用作铝和金属，金属硅化物或硅之间的扩散阻挡层。本发明的优选实施方案还包括形成这种结构的方法，优选包括：在蒸发装置中在高真空下沉积纯钽，在蒸发装置中用铝代替钽，并在水，空气或氧气中渗出以形成氧化铝 - 丰富的中间铝层，然后返回高真空沉积纯铝。本发明也适用于需要铝的扩散阻挡层的FET或CCD结构。

8. 发明申请

US20100301196A1 PORTABLE/MOBILE FISSIBLE MATERIAL DETECTOR AND METHODS FOR MAKING AND USING SAME 审中-公开
标题翻译：便携式/移动的不确定的材料检测器及其制造和使用方法
公开(公告)号：US20100301196A1
公开(公告)日：2010-12-02
申请号：US12598269
申请日：2008-05-02
申请人： Wei-Kan Chu , Jia-Rui Liu
发明人： Wei-Kan Chu , Jia-Rui Liu
IPC分类号： H05H3/06 , H01J27/26 , G01T3/00 , G01N23/222
CPC分类号： H01J27/26 , G01N2223/0745 , G01N2223/626 , G01V5/0091
摘要： A portable and/or mobile detector for highly enriched uranium (HEU) and weapon grade plutonium (WGPu) is disclosed the detects HEU and/or WGPu based on neutron induced fission of a portion of the HEU and/or WGPu and detecting delayed neutron and/or γ-rays emission from delayed neutron emitters formed from the induced fission reactions.
摘要翻译：公开了一种用于高浓缩铀（HEU）和武器级钚（WGPu）的便携式和/或移动式探测器，其基于一部分HEU和/或WGPu的中子诱导的裂变检测HEU和/或WGPu，并检测延迟的中子和 /或从诱导的裂变反应形成的延迟中子发射体的γ射线发射。

9. 发明授权

US07420175B2 Explosives detection by directional fast neutron beams scan with associated particles 有权
标题翻译：通过定向快中子束扫描与相关颗粒的爆炸物检测
公开(公告)号：US07420175B2
公开(公告)日：2008-09-02
申请号：US11279625
申请日：2006-04-13
申请人： Wei-Kan Chu , Jiarui Lui
发明人： Wei-Kan Chu , Jiarui Lui
IPC分类号： G01N23/222
CPC分类号： G01V5/0008 , G01V5/0069
摘要： This invention is related to equipment and techniques for fast neutron activation analysis of explosives and /or other warfare agent. The techniques are based on 14 MeV fast neutrons from D-T fusion reaction, the kinematics of the nuclear reaction and fast coincidence between α-particles of the D-T reaction and γ-quanta from fast neutron induced reactions. A fast neutron generator with effective target cooling and different operation modes provides high neutron yield, long life, and simple maintenance of the equipment and good geometric resolution of the directional neutron beam. High positional resolution of the directionally scanning neutron beam, high time resolution of the coincidence and high neutron yield provide the real time robust screen of explosives with high speed and/or high sensitivity, flexibility for big and small items and overall high probability of detection (PD) and low probability of false alarms (PFA). The remote video scan device also has zooming capability to change solid angle.
摘要翻译：本发明涉及爆炸物和/或其他战剂的快中子活化分析的设备和技术。这些技术基于D-T融合反应的14 MeV快中子，核反应的运动学和D-T反应的α粒子与快中子诱导反应的γ量子之间的快速重合。具有有效目标冷却和不同操作模式的快速中子发生器提供高中子产量，长寿命和设备的简单维护以及方向中子束的良好几何分辨率。方向扫描中子束的高位置分辨率，高重时和高中子产量的高时间分辨率提供具有高速度和/或高灵敏度的爆炸物的实时鲁棒屏幕，用于大型和小型物品的灵活性以及总体高检测概率（ PD）和低误报率概率（PFA）。远程视频扫描设备还具有变焦功能，可以改变立体角度。

10. 发明授权

US07105427B1 Method for shallow dopant distribution 失效
标题翻译：浅掺杂剂分布方法
公开(公告)号：US07105427B1
公开(公告)日：2006-09-12
申请号：US10929939
申请日：2004-08-30
申请人： Wei-Kan Chu , Lin Shao , Xinming Lu , Jiarui Liu , Xuemei Wang
发明人： Wei-Kan Chu , Lin Shao , Xinming Lu , Jiarui Liu , Xuemei Wang
IPC分类号： H01L21/425
CPC分类号： H01L21/2254 , H01L21/2257 , H01L21/26506 , H01L21/26513 , H01L29/34
摘要： Vacancies and dopant ions are introduced near the surface of a semiconductor wafer. The dopant ions which diffuse by an interstitialcy mechanism have diffusivity greatly reduced, which leads to a very low resistivity doped region and a very shallow junction.
摘要翻译：在半导体晶片的表面附近引入空位和掺杂离子。通过间隙机制扩散的掺杂离子具有大大降低的扩散率，这导致非常低的电阻率掺杂区域和非常浅的结。

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