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1. 发明授权

US08546831B1 Reflection convex mirror structure of a vertical light-emitting diode 有权
标题翻译：垂直发光二极管的反射凸面镜结构
公开(公告)号：US08546831B1
公开(公告)日：2013-10-01
申请号：US13474350
申请日：2012-05-17
申请人： Fu-Bang Chen , Wei-Yu Yen , Li-Ping Chou , Wei-Chun Tseng , Chih-Sung Chang
发明人： Fu-Bang Chen , Wei-Yu Yen , Li-Ping Chou , Wei-Chun Tseng , Chih-Sung Chang
IPC分类号： H01L33/58
CPC分类号： H01L33/10 , H01L33/20
摘要： A reflection convex mirror structure is applied to a vertical light-emitting diode (LED) which comprises a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer, a filler and a mirror are disposed right below the N-type electrode. The filler is made of a transparent material and has a convex surface facing the light-emitting layer. The mirror is formed on the convex surface of the filler. By utilizing the filler and the mirror to form the reflection convex mirror structure, excited light is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.
摘要翻译：反射凸面镜结构被应用于垂直发光二极管（LED），其包括P型电极，永久性基板，结合层，缓冲层，镜面层，P型半导体层，光依次层叠的N型半导体层和N型电极。在P型半导体层和镜层之间，在N型电极的正下方配置有填料和反射镜。填料由透明材料制成，并具有面向发光层的凸面。镜子形成在填料的凸面上。通过利用填充物和反射镜形成反射凸面镜结构，激发光朝向两侧反射，使得激发光可以避开N型电极而不被屏蔽以提高光提取效率。

2. 发明授权

US09263641B2 Light emitting diodes 有权
标题翻译：发光二极管
公开(公告)号：US09263641B2
公开(公告)日：2016-02-16
申请号：US13464544
申请日：2012-05-04
申请人： Wei-chun Tseng , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
发明人： Wei-chun Tseng , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/38 , H01L33/40 , H01L33/22 , H01L33/32
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/382
摘要： An electric contact structure adopted for an LED comprises a nitride middle layer and an N-type metal electrode layer. The LED includes an N-type semiconductor layer, a light emission layer and a P-type semiconductor layer that are stacked to form a sandwich structure. The nitride middle layer is patterned and formed on the N-type semiconductor layer. The N-type metal electrode layer is formed on the nitride middle layer and prevented from being damaged by diffusion of the metal ions as the nitride middle layer serves as a blocking interface, thus electric property of the N-type semiconductor layer can be maintained stable. The nitride middle layer would not be softened and condensed due to long-term high temperature, thereby is enhanced adhesion. Moreover, the N-type metal electrode layer further can be prevented from peeling off, hence is increased the lifespan of the LED.
摘要翻译：用于LED的电接触结构包括氮化物中间层和N型金属电极层。 LED包括层叠以形成夹层结构的N型半导体层，发光层和P型半导体层。氮化物中间层被图案化并形成在N型半导体层上。 N型金属电极层形成在氮化物中间层上，并且由于氮化物中间层用作阻挡界面，因此防止金属离子的扩散而损坏，因此可以保持N型半导体层的电性能。氮化物中间层由于长期高温而不会软化和冷凝，从而增强了粘附力。此外，还可以防止N型金属电极层剥离，从而增加LED的寿命。

3. 发明申请

US20130292734A1 ELECTRIC CONTACT STRUCTURE FOR LIGHT EMITTING DIODES 有权
标题翻译：用于发光二极管的电接触结构
公开(公告)号：US20130292734A1
公开(公告)日：2013-11-07
申请号：US13464544
申请日：2012-05-04
申请人： Wei-chun TSENG , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
发明人： Wei-chun TSENG , Wei-Yu Yen , Fu-Bang Chen , Chih-Sung Chang
IPC分类号： H01L33/38
CPC分类号： H01L33/40 , H01L33/22 , H01L33/32 , H01L33/382
摘要： An electric contact structure adopted for an LED comprises a nitride middle layer and an N-type metal electrode layer. The LED includes an N-type semiconductor layer, a light emission layer and a P-type semiconductor layer that are stacked to form a sandwich structure. The nitride middle layer is patterned and formed on the N-type semiconductor layer. The N-type metal electrode layer is formed on the nitride middle layer and prevented from being damaged by diffusion of the metal ions as the nitride middle layer serves as a blocking interface, thus electric property of the N-type semiconductor layer can be maintained stable. The nitride middle layer would not be softened and condensed due to long-term high temperature, thereby is enhanced adhesion. Moreover, the N-type metal electrode layer further can be prevented from peeling off, hence is increased the lifespan of the LED.
摘要翻译：用于LED的电接触结构包括氮化物中间层和N型金属电极层。 LED包括层叠以形成夹层结构的N型半导体层，发光层和P型半导体层。氮化物中间层被图案化并形成在N型半导体层上。 N型金属电极层形成在氮化物中间层上，并且由于氮化物中间层用作阻挡界面，因此防止金属离子的扩散而损坏，因此可以保持N型半导体层的电性能。氮化物中间层由于长期高温而不会软化和冷凝，从而增强了粘附力。此外，还可以防止N型金属电极层剥离，从而增加LED的寿命。

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