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    • 7. 发明授权
    • Method for testing a non-volatile memory
    • 用于测试非易失性存储器的方法
    • US06845476B2
    • 2005-01-18
    • US09901345
    • 2001-07-09
    • Wei-Hsin Chen
    • Wei-Hsin Chen
    • G11C29/08G11C29/00
    • G11C16/3445G11C16/3459G11C29/08
    • The present invention discloses a method for testing a non-volatile memory, characterized in that the code assigned by the client is written in at least one non-volatile memory in advance, and then a particular pin of the non-volatile memory is cut, such as a write enabling pin for avoiding the mistake of rewriting. After restarting a testing machine, the code written in the non-volatile memory is read out to compare it with the code retrieved from a controlling program of the testing machine. If the comparing result is identical, it means that the code retrieved by the controlling program of the testing machine is correct; otherwise, the code retrieved by the controlling program is incorrect.
    • 本发明公开了一种用于测试非易失性存储器的方法,其特征在于,由客户端分配的代码预先写入至少一个非易失性存储器中,然后切断非易失性存储器的特定引脚, 例如写启用引脚,以避免重写错误。 重新启动测试机后,读出写在非易失性存储器中的代码,将其与从测试机的控制程序中检索的代码进行比较。 如果比较结果相同,则表示由测试机的控制程序检索的代码是正确的; 否则,由控制程序检索的代码不正确。