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1. 发明授权

US06624370B1 Gas circuit breaker 有权
标题翻译：气体断路器
公开(公告)号：US06624370B1
公开(公告)日：2003-09-23
申请号：US09634995
申请日：2000-08-08
申请人： Takuichiro Soga , Junzo Kida , Wataru Tamura , Hideo Kawamoto , Takeshi Iryo
发明人： Takuichiro Soga , Junzo Kida , Wataru Tamura , Hideo Kawamoto , Takeshi Iryo
IPC分类号： H01H3370
CPC分类号： H01H33/02 , H01H33/56 , H01H2033/888
摘要： A highly reliable gas circuit breaker capable of improving the braking performance and the insulating performance and a gas circuit breaker capable of allowing a stress acting on the supporting member of the electrode are provided. The gas circuit breaker comprising a grounded tank filled with an insulation medium; a movable electrode arranged inside the grounded tank; a fixed electrode which is supported through an insulator supporting member inside the grounded tank and disposed detachably from and oppositely to the movable electrode; and electric conductive parts individually provided in the movable electrode and the fixed electrode, wherein the insulator supporting member is a solid cone and supports the fixed electrode in an upper side of a central axis of the grounded tank.
摘要翻译：提供一种能够提高制动性能和绝缘性能的高可靠性气体断路器，以及能够允许作用在电极的支撑构件上的应力的气体断路器。气体断路器包括填充有绝缘介质的接地槽 ; 布置在接地箱内的可动电极; 固定电极，其通过绝缘体支撑构件支撑在接地箱内部，并且与可移动电极可拆卸地相对地设置; 以及分别设置在所述可动电极和所述固定电极中的导电部，所述绝缘体支撑部件为固体锥体，并且在所述接地罐的中心轴的上侧支撑所述固定电极。

2. 发明授权

US08367449B2 Semiconductor light-emitting apparatus and method of manufacturing the same 有权
标题翻译：半导体发光装置及其制造方法
公开(公告)号：US08367449B2
公开(公告)日：2013-02-05
申请号：US13026564
申请日：2011-02-14
申请人： Chiharu Sasaki , Wataru Tamura , Keita Akiyama
发明人： Chiharu Sasaki , Wataru Tamura , Keita Akiyama
IPC分类号： H01L31/00 , H01L21/00
CPC分类号： H01L33/325 , H01L21/02543 , H01L21/02573 , H01L21/0262 , H01L33/0066
摘要： A semiconductor light-emitting apparatus that has high luminous efficiency and a high breakdown voltage as well as reduced breakdown voltage variation among lots. The semiconductor light-emitting apparatus includes a first clad layer and a second clad layer. An average dopant concentration of the second clad layer is lower than that of the first clad layer. The light-emitting apparatus also includes an active layer having an average dopant concentration of 2×1016 to 4×1016 cm−3. The active layer is made of (AlyGa1-y)xIn1-xP (0
摘要翻译：具有高发光效率和高击穿电压的半导体发光装置以及批次之间降低的击穿电压变化。半导体发光装置包括第一覆盖层和第二覆盖层。第二覆盖层的平均掺杂剂浓度低于第一覆盖层的平均掺杂剂浓度。发光装置还包括平均掺杂剂浓度为2×1016至4×1016cm-3的有源层。有源层由（AlyGa1-y）xIn1-xP（0

3. 发明授权

US08319253B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US08319253B2
公开(公告)日：2012-11-27
申请号：US13009045
申请日：2011-01-19
申请人： Wataru Tamura , Chiharu Sasaki
发明人： Wataru Tamura , Chiharu Sasaki
IPC分类号： H01L33/00
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/30
摘要： The device including an active layer composed of AlGaInP, and an n-type clad layer and a p-type clad layer disposed so as to sandwich the active layer, the n-type clad layer and the p-type clad layer each having a bandgap greater than the bandgap of the active layer. The n-type clad layer includes a first n-type clad layer composed of AlGaInP and a second n-type clad layer composed of AlInP; and the second n-type clad layer has a thickness in the range from 40 nm to 200 nm.
摘要翻译：所述器件包括由AlGaInP构成的有源层，以及n型覆盖层和p型覆盖层，所述p型覆盖层设置成夹持有源层，n型覆盖层和p型覆盖层各自具有带隙大于活性层的带隙。 n型覆盖层包括由AlGaInP构成的第一n型覆盖层和由AlInP构成的第二n型覆盖层; 第二n型覆盖层的厚度为40nm〜200nm。

4. 发明申请

US20110227038A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND A PRODUCTION METHOD THEREOF 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20110227038A1
公开(公告)日：2011-09-22
申请号：US13048520
申请日：2011-03-15
申请人： Wataru TAMURA
发明人： Wataru TAMURA
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/18 , H01L33/20 , H01L33/30 , H01L33/405
摘要： A semiconductor light emitting device comprising a semiconductor layer of (AlyGa1-y)xIn1-xP (0
摘要翻译：一种半导体发光器件，包括由（AlyGa1-y）xIn1-xP（0

5. 发明申请

US20110175057A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20110175057A1
公开(公告)日：2011-07-21
申请号：US13009045
申请日：2011-01-19
申请人： Wataru TAMURA , Chiharu Sasaki
发明人： Wataru TAMURA , Chiharu Sasaki
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/30
摘要： The device including an active layer composed of AlGaInP, and an n-type clad layer and a p-type clad layer disposed so as to sandwich the active layer, the n-type clad layer and the p-type clad layer each having a bandgap greater than the bandgap of the active layer. The n-type clad layer includes a first n-type clad layer composed of AlGaInP and a second n-type clad layer composed of AlInP; and the second n-type clad layer has a thickness in the range from 40 nm to 200 nm.
摘要翻译：所述器件包括由AlGaInP构成的有源层，以及n型覆盖层和p型覆盖层，所述p型覆盖层设置成夹持有源层，n型覆盖层和p型覆盖层各自具有带隙大于活性层的带隙。 n型覆盖层包括由AlGaInP构成的第一n型覆盖层和由AlInP构成的第二n型覆盖层; 第二n型覆盖层的厚度为40nm〜200nm。

6. 发明申请

US20100289042A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20100289042A1
公开(公告)日：2010-11-18
申请号：US12779246
申请日：2010-05-13
申请人： Wataru TAMURA , Chiharu SASAKI
发明人： Wataru TAMURA , Chiharu SASAKI
IPC分类号： H01L33/30 , H01L33/42
CPC分类号： H01L33/40 , H01L33/14 , H01L33/30
摘要： A semiconductor light emitting device includes a first cladding layer, a second cladding layer, and an active layer formed between the first and second cladding layers. A diffusion control layer includes an intermediate layer and a first transparent conductive layer provided on the second cladding layer in this order. The semiconductor light emitting device further includes a second transparent conductive layer having an impurity in a concentration lower than an impurity concentration of the diffusion control layer, and a third transparent conductive layer having an impurity in a concentration higher than the impurity concentration of the second transparent conductive layer. The boundary between the intermediate layer and the first transparent conductive layer is a lattice mismatch interface.
摘要翻译：半导体发光器件包括第一覆层，第二覆层和形成在第一和第二覆层之间的有源层。扩散控制层依次包括设置在第二覆层上的中间层和第一透明导电层。半导体发光器件还包括具有浓度低于扩散控制层的杂质浓度的杂质的第二透明导电层和具有浓度高于第二透明体的杂质浓度的杂质的第三透明导电层导电层。中间层和第一透明导电层之间的边界是晶格失配界面。

7. 发明申请

US20100034230A1 ARSENIC DOPED SEMICONDUCTOR LIGHT EMITTING DEVICE AND ITS MANUFACTURE 审中-公开
标题翻译： ARSENIC DOPED半导体发光器件及其制造
公开(公告)号：US20100034230A1
公开(公告)日：2010-02-11
申请号：US12535985
申请日：2009-08-05
申请人： Wataru TAMURA , Tatsuma Saito
发明人： Wataru TAMURA , Tatsuma Saito
IPC分类号： H01S5/026 , H01L21/00
CPC分类号： H01L33/30 , H01L33/025
摘要： A semiconductor light emitting device includes: a substrate; a first clad layer formed above the substrate and made of AlGaInP mixed crystal of a first conductivity type; an active layer formed on the first clad layer and made of AlGaInP mixed crystal; and a second clad layer formed on the active layer and made of AlGaInP mixed crystal of a second conductivity type opposite to the first conductivity type, wherein the first clad layer and the second clad layer each have a band gap wider than a band gap of the active layer, and at least one of the active layer and the first and second clad layers is doped with arsenic at an impurity concentration level not changing the band gap. Carbon capturing is suppressed, and surface morphology is suppressed from being degraded.
摘要翻译：一种半导体发光器件，包括：衬底; 形成在所述衬底上并由第一导电类型的AlGaInP混晶构成的第一覆层; 形成在第一包层上并由AlGaInP混晶构成的有源层; 以及形成在所述有源层上并由与所述第一导电类型相反的第二导电类型的AlGaInP混合晶体形成的第二覆盖层，其中所述第一覆盖层和所述第二覆盖层各自具有比所述第一导电类型的带隙宽的带隙有源层，并且有源层和第一和第二覆盖层中的至少一个以不改变带隙的杂质浓度水平掺杂砷。抑制碳捕获，并且抑制表面形态的降解。

8. 发明授权

US5783791A Gas insulated interrupter 失效
标题翻译：气体绝缘灭弧室
公开(公告)号：US5783791A
公开(公告)日：1998-07-21
申请号：US797612
申请日：1997-02-07
申请人： Wataru Tamura , Toru Tsubaki
发明人： Wataru Tamura , Toru Tsubaki
IPC分类号： H01H33/70 , H01H33/90 , H01H33/91 , H01H33/915 , H01H33/88
CPC分类号： H01H33/901
摘要： A puffer-type gas insulated interrupter has stationary and moving main contacts, stationary and moving arc contacts for discharging an arc, and a puffer cylinder for electric arc suppression. At the time of current interruption, the puffer cylinder moves together with the moving arc contact to blow electric insulation gas to the arc between the stationary and moving arc contacts. The blown gas flows between the arc contacts and is then discharged through a gas discharge passage. A duplex puffer chamber is provided in the gas discharge passage near the moving arc contact. The duplex puffer chamber holds or confines the insulation gas, and causes the same to be heated and pressurized by the arc and to blow out toward the stationary arc contact. A gas flow from the duplex puffer chamber cooperates with a gas flow from the puffer cylinder to effectively suppress the arc, and therefore the gas pressure in the puffer cylinder can be reduced, so that an operating force for the interrupter can be reduced.
摘要翻译：吹气式气体绝缘断路器具有静止和移动的主触点，用于放电的静止和移动电弧触点，以及用于电弧抑制的吹气筒。在电流中断时，气缸与移动电弧接触件一起移动，将电绝缘气体吹向固定和移动电弧触点之间的电弧。吹出的气体在电弧触点之间流动，然后通过气体排出通道排出。气体排出通道中的移动电弧触点附近设置有双相气泡室。双相河流室保持或限制绝缘气体，并使其由电弧加热和加压，并向固定电弧触点吹出。来自双相气泡室的气流与来自吹气缸的气流协同作用，能够有效地抑制电弧，能够降低气缸内的气体压力，能够降低断续器的动作力。

9. 发明授权

US08410498B2 Semiconductor light emitting device and method for manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08410498B2
公开(公告)日：2013-04-02
申请号：US12779246
申请日：2010-05-13
申请人： Wataru Tamura , Chiharu Sasaki
发明人： Wataru Tamura , Chiharu Sasaki
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/14 , H01L33/30
摘要： A semiconductor light emitting device includes a first cladding layer, a second cladding layer, and an active layer formed between the first and second cladding layers. A diffusion control layer includes an intermediate layer and a first transparent conductive layer provided on the second cladding layer in this order. The semiconductor light emitting device further includes a second transparent conductive layer having an impurity in a concentration lower than an impurity concentration of the diffusion control layer, and a third transparent conductive layer having an impurity in a concentration higher than the impurity concentration of the second transparent conductive layer. The boundary between the intermediate layer and the first transparent conductive layer is a lattice mismatch interface.
摘要翻译：半导体发光器件包括第一覆层，第二覆层和形成在第一和第二覆层之间的有源层。扩散控制层依次包括设置在第二覆层上的中间层和第一透明导电层。半导体发光器件还包括具有浓度低于扩散控制层的杂质浓度的杂质的第二透明导电层和具有浓度高于第二透明体的杂质浓度的杂质的第三透明导电层导电层。中间层和第一透明导电层之间的边界是晶格失配界面。

10. 发明授权

US08450718B2 Semiconductor light emitting device and a production method thereof 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08450718B2
公开(公告)日：2013-05-28
申请号：US13048520
申请日：2011-03-15
申请人： Wataru Tamura
发明人： Wataru Tamura
IPC分类号： H01L29/06
CPC分类号： H01L33/06 , H01L33/0079 , H01L33/18 , H01L33/20 , H01L33/30 , H01L33/405
摘要： A semiconductor light emitting device comprising a semiconductor layer of (AlyGa1-y)xIn1-xP (0
摘要翻译：一种半导体发光器件，包括由（AlyGa1-y）xIn1-xP（0

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