专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO2009050672A3 MAGNETIC DETECTION OF BACK-SIDE LAYER 审中-公开
标题翻译：磁性检测背面层
公开(公告)号：WO2009050672A3
公开(公告)日：2009-10-29
申请号：PCT/IB2008054260
申请日：2008-10-16
申请人： NXP BV , ZIEREN VICTOR , WOLTERS ROBERTUS A M
发明人： ZIEREN VICTOR , WOLTERS ROBERTUS A M
IPC分类号： H01L23/58
CPC分类号： H01L23/57 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12032 , H01L2924/1305 , H01L2924/13091 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： The invention relates to an integrated circuit comprising a substrate having a first side and a second opposing side. An electronic circuit (EC) is provided at the first side (S1) of the substrate, wherein the electronic circuit (EC) comprises at least one magnetic field sensor (Snsr, Snsr1, Snsr2, Snsr3, Snsr4). The integrated circuit further comprises a magnetizable region (MR) provided on the second side (S1) of the substrate (SUB) by using a wafer-level type deposition processing step. The magnetic moment of the magnetizable region (MR) is configurable for generating a magnetic field (H1, H2) detectable at the location of the at least one magnetic field sensor (Snsr, Snsr1, Snsr2, Snsr3, Snsr4). The integrated circuit constitutes a very simple construction and enables a strongly miniaturized solution which is, because of its reduced dimensions well suitable for being used in bank cards. An attempt to remove the integrated circuit according to the invention from its environment (e.g. a bank card) may result in the magnetizable region (MR) getting damaged (partially removed) or even completely removed. The invention provides a first level of security against external attack. Embodiments of the invention provide higher security levels. Various magnetic field sensors are illustrated which may be advantageously integrated in the integrated circuit. The invention also relates to a card provided with such integrated circuit. The card in accordance with the invention is more secure. The invention further relates to a method of initializing such integrated circuit and a method of checking the authenticity of such integrated circuit.
摘要翻译：本发明涉及一种集成电路，其包括具有第一侧和第二相对侧的衬底。电子电路（EC）被提供在衬底的第一侧（S1），其中电子电路（EC）包括至少一个磁场传感器（Snsr，Snsr1，Snsr2，Snsr3，Snsr4）。该集成电路还包括通过使用晶片级型沉积处理步骤设置在衬底（SUB）的第二侧（S1）上的可磁化区域（MR）。可磁化区域（MR）的磁矩可配置为用于生成在至少一个磁场传感器（Snsr，Snsr1，Snsr2，Snsr3，Snsr4）的位置处可检测的磁场（H1，H2）。该集成电路构成非常简单的结构，并且能够实现强烈小型化的解决方案，因为其尺寸减小非常适合用于银行卡。试图从其环境中去除根据本发明的集成电路（例如银行卡）可能会导致可磁化区域（MR）被损坏（部分移除）或者甚至被完全移除。本发明提供了防止外部攻击的第一级安全性。本发明的实施例提供更高的安全级别。示出了可以有利地集成在集成电路中的各种磁场传感器。本发明还涉及一种提供有这种集成电路的卡。根据本发明的卡更安全。本发明还涉及初始化这种集成电路的方法和检查这种集成电路真实性的方法。

2. 发明申请

WO2005093839A3 ELECTRIC DEVICE COMPRISING PHASE CHANGE MATERIAL 审中-公开
标题翻译：包含相变材料的电气设备
公开(公告)号：WO2005093839A3
公开(公告)日：2007-03-29
申请号：PCT/IB2005050923
申请日：2005-03-16
申请人： KONINKL PHILIPS ELECTRONICS NV , LANKHORST MARTIJN H R , MEINDERS ERWIN R , WOLTERS ROBERTUS A M , WIDDERSHOVEN FRANCISCUS P
发明人： LANKHORST MARTIJN H R , MEINDERS ERWIN R , WOLTERS ROBERTUS A M , WIDDERSHOVEN FRANCISCUS P
IPC分类号： H01L27/24 , G11C11/56 , G11C16/02 , H01L45/00
CPC分类号： G11C11/56 , G11C11/5678 , G11C13/0004 , H01L27/2436 , H01L27/2463 , H01L45/06 , H01L45/1226 , H01L45/124 , H01L45/1286 , H01L45/148 , H01L45/1675 , H01L45/1691
摘要： The electric device (100) according to the invention has a resistor comprising a layer (7, 107) of a phase change material which is changeable between a first phase with a first electrical resistivity and a second phase with a second electrical resistivity different from the first electrical resistivity. The phase change material is a fast growth material. The electric device (100) further comprises a switching signal generator (400) for switching the resistor between at least three different electrical resistance values by changing a corresponding portion of the layer (7, 107) of the phase change material from the first phase to the second phase.
摘要翻译：根据本发明的电子设备（100）具有电阻器，该电阻器包括相变材料的层（7,107），所述相变材料层可以在具有第一电阻率的第一相和第二相之间变化，所述第二相具有不同于第一电阻率。相变材料是快速生长材料。电气设备（100）还包括切换信号发生器（400），用于通过将相变材料的层（7,107）的相对应部分从第一阶段改变为至少三个不同的电阻值来切换电阻器第二阶段

3. 发明申请

WO2006079952A1 FABRICATION OF PHASE-CHANGE RESISTOR USING A BACKEND PROCESS 审中-公开
标题翻译：使用后台工艺制造相变电阻器
公开(公告)号：WO2006079952A1
公开(公告)日：2006-08-03
申请号：PCT/IB2006/050210
申请日：2006-01-19
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , IN 'T ZANDT, Michael, A., A. , LANKHORST, Martijn, H., R. , WOLTERS, Robertus, A., M. , KWINTEN, Hans
发明人： IN 'T ZANDT, Michael, A., A. , LANKHORST, Martijn, H., R. , WOLTERS, Robertus, A., M. , KWINTEN, Hans
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/148 , H01L45/1675 , H01L45/1691
摘要： A phase change resistor device has a phase change material (PCM) for which the phase transition occurs inside the PCM and not at the interface with a contact electrode. For ease of manufacturing the PCM is an elongate line structure (210, 215) surrounded by the conductive electrode portions (200, 240) at its lateral sides, and is formed in a CMOS backend process. An alternative is to form the device coupled directly to other circuit parts without the electrodes. In each case, there is a line of PCM which has a constant diameter or cross section, formed with reduced dimensions by using a spacer as a hard mask. The first contact electrode and the second contact electrode are electrically connected by a "one dimensional" layer of the PCM. The contact resistance between the one-dimensional layer of PCM and the first contact electrode at the second contact electrode is lower than the resistance of a central or intervening portion of the line.
摘要翻译：相变电阻器件具有相变材料（PCM），其相变发生在PCM内，而不是在与接触电极的界面处。为了便于制造，PCM是由导电电极部分（200,240）在其侧面环绕的细长线结构（210,215），并且以CMOS后端工艺形成。一种替代方案是形成直接连接到没有电极的其它电路部件的装置。在每种情况下，存在具有恒定直径或横截面的PCM线，其通过使用间隔件作为硬掩模以减小的尺寸形成。第一接触电极和第二接触电极通过PCM的“一维”层电连接。 PCM的一维层和第二接触电极处的第一接触电极之间的接触电阻低于线的中心部分或中间部分的电阻。

4. 发明申请

WO2006056959A1 METHOD OF MODIFYING SURFACE AREA AND ELECTRONIC DEVICE 审中-公开
标题翻译：修改表面区域和电子设备的方法
公开(公告)号：WO2006056959A1
公开(公告)日：2006-06-01
申请号：PCT/IB2005/053905
申请日：2005-11-25
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , KEMMEREN, Antonius, L., A., M. , ROOZEBOOM, Freddy , KLOOTWIJK, Johan, H. , WOLTERS, Robertus, A., M.
发明人： KEMMEREN, Antonius, L., A., M. , ROOZEBOOM, Freddy , KLOOTWIJK, Johan, H. , WOLTERS, Robertus, A., M.
IPC分类号： H01L21/02 , H01L21/8242
CPC分类号： H01L28/84 , H01L27/1087 , H01L29/66181
摘要： In the method a first layer, particularly of amorphous silicon, is deposited on the surface of a substrate with trenches. Part of this surface is covered with a protective layer. The first layer is thereafter maskless removed with a dry etching treatment on the substrate surface while it is kept within the trench.
摘要翻译：在该方法中，特别是非晶硅的第一层被沉积在具有沟槽的衬底的表面上。该表面的一部分被保护层覆盖。此后，第一层通过在衬底表面上进行干蚀刻处理而被除去，同时保持在沟槽内。

5. 发明申请

WO2006021906A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SUCH A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件及制造这种半导体器件的方法
公开(公告)号：WO2006021906A1
公开(公告)日：2006-03-02
申请号：PCT/IB2005/052646
申请日：2005-08-10
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , HOOKER, Jacob, C. , LANDER, Robert , WOLTERS, Robertus, A., M.
发明人： HOOKER, Jacob, C. , LANDER, Robert , WOLTERS, Robertus, A., M.
IPC分类号： H01L21/8238
CPC分类号： H01L21/823842
摘要： The invention relates to a CMOS device (10) with an NMOST I and PMOST 2 having gate regions (1D,2D) comprising a compound containing both a metal and a further element. According to the invention the first and second conducting material both comprise a compound containing as the metal a metal selected from the group comprising molybdenum and tungsten and both comprise as the further element an element selected from the group comprising carbon, oxygen and the chalcogenides. Preferably both the first and second conducting material comprise a compound of molybdenum and carbon or oxygen. The invention also provides an attractive method of manufacturing such a device.
摘要翻译：本发明涉及具有NMOST I和PMOST 2的CMOS器件（10），栅极区（1D，2D）包括含有金属和另一元素的化合物。根据本发明，第一和第二导电材料都包含含有选自钼和钨的金属作为金属的化合物，并且都包含选自碳，氧和硫族化物的元素作为另外的元素。优选地，第一和第二导电材料都包含钼和碳或氧的化合物。本发明还提供了制造这种装置的有吸引力的方法。

6. 发明申请

WO2004102279A3 METHOD OF MANUFACTURING AN ELECTRONIC DEVICE 审中-公开
公开(公告)号：WO2004102279A3
公开(公告)日：2004-11-25
申请号：PCT/IB2004/050664
申请日：2004-05-12
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , FURUKAWA, Yukiko , WOLTERS, Robertus, A., M.
发明人： FURUKAWA, Yukiko , WOLTERS, Robertus, A., M.
IPC分类号： G03F7/40
摘要： A method of manufacturing an electronic device is provided wherein an interconnect is made using 193 nm lithography. No deformation of the desired linewidth takes place in that during a plasma gas is used which dissociates in low-weight ions. The electronic device is particularly an integrated circuit.

7. 发明申请

WO2003052814A1 METHOD OF MANUFACTURING AN ELECTRONIC DEVICE 审中-公开
标题翻译：制造电子设备的方法
公开(公告)号：WO2003052814A1
公开(公告)日：2003-06-26
申请号：PCT/IB2002/005267
申请日：2002-12-06
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , WOLTERS, Robertus, A., M. , VAN GRAVEN-CLAASSEN, Anouk, M.
发明人： WOLTERS, Robertus, A., M. , VAN GRAVEN-CLAASSEN, Anouk, M.
IPC分类号： H01L21/768
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/76855 , H01L21/76864 , H01L21/76867 , H01L21/76873 , H01L23/53238 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides for a method of providing copper metallization on a semiconductor body, including the step of depositing copper in a nitrogen-containing atmosphere so as to form a nitrogen-containing copper seed layer and forming the copper metallization on the seed layer, and also including the step of heating the seed layer so as to release the nitrogen to form part of a barrier layer separating the seed layer from the semiconductor body.
摘要翻译：本发明提供了一种在半导体本体上提供铜金属化的方法，包括在含氮气氛中沉积铜以形成含氮铜籽晶层并在种子层上形成铜金属化的步骤，以及还包括加热种子层以释放氮气以形成将种子层与半导体本体分离的阻挡层的一部分的步骤。

8. 发明申请

WO2007072251A2 SECURITY ELEMENT AND METHODS FOR MANUFACTURING AND AUTHENTICATING THE SAME 审中-公开
标题翻译：安全元件及其制造方法及其认证
公开(公告)号：WO2007072251A2
公开(公告)日：2007-06-28
申请号：PCT/IB2006/054501
申请日：2006-11-29
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , WOLTERS, Robertus, A., M. , JOHNSON, Mark, T. , TUYLS, Pim, T.
发明人： WOLTERS, Robertus, A., M. , JOHNSON, Mark, T. , TUYLS, Pim, T.
IPC分类号： G07D7/00 , G07F7/08 , G06K19/067
CPC分类号： G07F7/12 , G06K19/0672 , G06K19/10 , G07D7/01 , G07F7/08
摘要： A security element comprises at least one oscillating circuit (Ol-On) and a digital signature (2). Each oscillating circuit (Ol-On) comprises a capacitor (Cl-Cn) as resonance frequency setting element wherein the capacitor (Cl-Cn) consists of two electrodes (8, 10) which are spaced apart from each other and a dielectric (9) that is sandwiched between the two electrodes (8, 10). The capacitor (Cl-Cn) of each oscillating circuit has a random capacitance value which randomness is caused by a non-uniform thickness (d) of the dielectric (9) and/or by an inhomogeneous dielectric material. The digital signature (2) comprises reference values indicative for the resonance frequencies (fl - fh) of the oscillating circuits wherein the reference values are digitally signed with a secret key.
摘要翻译：安全元件包括至少一个振荡电路（Ol-On）和数字签名（2）。每个振荡电路（Ol-On）包括作为谐振频率设定元件的电容器（C1-Cn），其中电容器（C1-Cn）由彼此间隔开的两个电极（8,10）和电介质（9 ）夹在两个电极（8,10）之间。每个振荡电路的电容器（C1-Cn）具有由电介质（9）的不均匀厚度（d）和/或由不均匀的电介质材料引起的无规性的随机电容值。数字签名（2）包括指示振荡电路的谐振频率（fl-fh）的参考值，其中参考值用秘密密钥进行数字签名。

9. 发明申请

WO2004057676A3 ELECTRIC DEVICE WITH PHASE CHANGE MATERIAL AND PARALLEL HEATER 审中-公开
公开(公告)号：WO2004057676A3
公开(公告)日：2004-07-08
申请号：PCT/IB2003/005740
申请日：2003-12-05
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LANKHORST, Martijn, H., R. , MEINDERS, Erwin, R. , WOLTERS, Robertus, A., M. , WIDDERSHOVEN, Franciscus, P.
发明人： LANKHORST, Martijn, H., R. , MEINDERS, Erwin, R. , WOLTERS, Robertus, A., M. , WIDDERSHOVEN, Franciscus, P.
IPC分类号： H01L27/24
摘要： The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the phase change material is in the first phase and a second electrical resistance, different from the first electrical resistance, when the phase change material is in the second phase. The body (2, 102) further has a heating element (6, 106) being able to conduct a current for enabling a transition from the first phase to the second phase. The heating element (6, 106) is arranged in parallel with the resistor (7, 107).

10. 发明申请

WO2004057618A2 ELECTRIC DEVICE WITH PHASE CHANGE MATERIAL AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：具有相变材料的电气设备及其制造方法
公开(公告)号：WO2004057618A2
公开(公告)日：2004-07-08
申请号：PCT/IB2003/005734
申请日：2003-12-05
申请人： KONINKLIJKE PHILIPS ELECTRONICS N.V. , LANKHORST, Martijn, H., R. , WIDDERSHOVEN, Franciscus, P. , WOLTERS, Robertus, A., M. , KETELAARS, Wilhelmus, S., M., M. , MEINDERS, Erwin, R.
发明人： LANKHORST, Martijn, H., R. , WIDDERSHOVEN, Franciscus, P. , WOLTERS, Robertus, A., M. , KETELAARS, Wilhelmus, S., M., M. , MEINDERS, Erwin, R.
IPC分类号： G11C
CPC分类号： H01L45/06 , H01L27/2436 , H01L27/2463 , H01L45/1226 , H01L45/1286 , H01L45/144 , H01L45/148 , H01L45/1691
摘要： The electric device (100) has a body (102) having a resistor (107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (107) has a first electrical resistance when the phase change material is in the first phase, and a second electrical resistance, different from the first electrical resistance, when the phase change material is in the second phase. The phase change material constitutes a conductive path between a first contact area and a second contact area. A cross-section of the conductive path is smaller than the first contact area and the second contact area. The body (102) may further have a heating element 106 being able to conduct a current for enabling a transition from the first phase to the second phase. The heating element (106) is preferably arranged in parallel with the resistor (107).
摘要翻译：电气设备（100）具有主体（102），其具有电阻器（107），该电阻器包括可在第一相位和第二相位之间变化的相变材料。当相变材料处于第二相时，电阻器（107）具有第一电阻，当相变材料处于第一相时，具有不同于第一电阻的第二电阻。相变材料构成第一接触区域和第二接触区域之间的导电路径。导电路径的横截面小于第一接触区域和第二接触区域。主体（102）还可以具有加热元件106，该加热元件能够传导电流以实现从第一相到第二相的转变。加热元件（106）优选地与电阻器（107）并联布置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式