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1. 发明申请

WO2011008615A1 MAGNETIC STACK HAVING REFERENCE LAYERS WITH ORTHOGONAL MAGNETIZATION ORIENTATION DIRECTIONS 审中-公开
标题翻译：具有正交磁化定向方向的参考层的磁性堆栈
公开(公告)号：WO2011008615A1
公开(公告)日：2011-01-20
申请号：PCT/US2010/041300
申请日：2010-07-08
申请人： SEAGATE TECHNOLOGY LLC , YUANKAI, Zheng , ZHENG, Gao , WENZHONG, Zhu , WONJOON, Jung , HAIWEN, Xi
发明人： YUANKAI, Zheng , ZHENG, Gao , WENZHONG, Zhu , WONJOON, Jung , HAIWEN, Xi
IPC分类号： G11C11/16 , H01L43/08
CPC分类号： H01F10/329 , B82Y25/00 , G11C11/161 , H01F10/3254 , H01F10/3268 , H01F10/3272 , H01L43/08
摘要： A magnetic cell (10) includes a ferromagnetic free layer (18) having a free magnetization orientation direction (M F ) and a first ferromagnetic pinned reference layer (14) having a first reference magnetization orientation direction (M R1 )that is parallel or anti-parallel to the free magnetization orientation direction. A first oxide barrier layer (16) is between the ferromagnetic free layer and the first ferromagnetic pinned reference layer. The magnetic cell further includes a second ferromagnetic pinned reference layer (13) having a second reference magnetization orientation direction (M R2 ) that is orthogonal to the first reference magnetization orientation direction. The ferromagnetic free layer is between the first ferromagnetic pinned reference layer and the second ferromagnetic pinned reference layer.
摘要翻译：磁性电池（10）包括具有自由磁化取向方向（MF）的铁磁自由层（18）和具有平行或反平行的第一参考磁化取向方向（MR1）的第一铁磁性固定参考层（14）到自由磁化取向方向。第一氧化物阻挡层（16）在铁磁性自由层和第一铁磁性固定参考层之间。磁性单元还包括具有与第一参考磁化取向方向正交的第二参考磁化定向方向（MR2）的第二铁磁性固定参考层（13）。铁磁自由层在第一铁磁性钉扎参考层和第二铁磁性固定基准层之间。

2. 发明授权

US08634223B2 Magnetic memory with asymmetric energy barrier 有权
标题翻译：具有不对称能量屏障的磁记忆体
公开(公告)号：US08634223B2
公开(公告)日：2014-01-21
申请号：US13446458
申请日：2012-04-13
申请人： Wenzhong Zhu , Xiaohua Lou , Dimitar V. Dimitrov
发明人： Wenzhong Zhu , Xiaohua Lou , Dimitar V. Dimitrov
IPC分类号： G11C11/22
CPC分类号： G11C11/1675 , G11C11/161
摘要： A magnetic tunnel junction memory cell includes a ferromagnetic reference layer, a ferromagnetic free layer, and a non-magnetic barrier layer separating the ferromagnetic reference layer from the ferromagnetic free layer. The magnetic tunnel junction cell has an asymmetric energy barrier for switching between a high resistance data state and a low resistance data state. Memory devices and methods are also described.
摘要翻译：磁性隧道结存储单元包括铁磁参考层，铁磁自由层和将铁磁参考层与铁磁性自由层分开的非磁性阻挡层。磁性隧道结电池具有用于在高电阻数据状态和低电阻数据状态之间切换的不对称能量势垒。还描述了存储器件和方法。

3. 发明授权

US08508005B2 STRAM with compensation element and method of making the same 失效
标题翻译： STRAM具有补偿元素和制作方法
公开(公告)号：US08508005B2
公开(公告)日：2013-08-13
申请号：US13477200
申请日：2012-05-22
申请人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
发明人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
IPC分类号： H01L21/66 , G01R33/02 , G01C11/14
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/1284 , G11C11/161 , G11C11/1675
摘要： A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
摘要翻译：自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。补偿元件对自由磁性层的磁化取向施加偏置场。偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

4. 发明授权

US08426222B2 Magnetic stack with oxide to reduce switching current 有权
标题翻译：磁性堆叠与氧化物，以减少开关电流
公开(公告)号：US08426222B2
公开(公告)日：2013-04-23
申请号：US13248360
申请日：2011-09-29
申请人： Xiaohua Lou , Yuankai Zheng , Wenzhong Zhu , Wei Tian , Zheng Gao
发明人： Xiaohua Lou , Yuankai Zheng , Wenzhong Zhu , Wei Tian , Zheng Gao
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/1659 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F41/303 , H01L43/12
摘要： A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.
摘要翻译：具有铁磁自由层的磁性堆叠，在第一温度下为反铁磁性且在比第一温度高的第二温度下为非磁性的金属氧化物层，铁磁性固定基准层和非磁性间隔层之间，层和参考层。在写入过程中，金属氧化物层是非磁性的。对于诸如磁性隧道结电池的磁存储器单元，金属氧化物层提供降低的开关电流。

5. 发明授权

US08391055B2 Magnetic tunnel junction and memristor apparatus 有权
标题翻译：磁隧道结和忆阻器
公开(公告)号：US08391055B2
公开(公告)日：2013-03-05
申请号：US13241381
申请日：2011-09-23
申请人： Xiaobin Wang , Yiran Chen , Alan Wang , Haiwen Xi , Wenzhong Zhu , Hai Li , Hongyue Liu
发明人： Xiaobin Wang , Yiran Chen , Alan Wang , Haiwen Xi , Wenzhong Zhu , Hai Li , Hongyue Liu
IPC分类号： G11C11/00
CPC分类号： G01R33/098 , G11C11/1673 , G11C11/1675 , G11C13/003 , G11C2213/56 , G11C2213/76 , H01L27/224 , H01L43/08
摘要： A magnetic memory device includes a magnetic tunnel junction having a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation and a memristor solid state element electrically coupled to the magnetic tunnel junction. The memristor has a device response that is an integrated voltage versus an integrated current.
摘要翻译：磁存储器件包括具有磁化取向的自由磁性层的磁性隧道结，其磁化取向可在高电阻状态磁化取向和低电阻状态磁化取向之间切换，以及与磁性隧道结电耦合的忆阻体固态元件。忆阻器具有集成电压与集成电流的器件响应。

6. 发明申请

US20120248558A1 STRAM WITH COMPENSATION ELEMENT AND METHOD OF MAKING THE SAME 失效
标题翻译：具有补偿元件的条纹及其制造方法
公开(公告)号：US20120248558A1
公开(公告)日：2012-10-04
申请号：US13477200
申请日：2012-05-22
申请人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
发明人： Kaizhong Gao , Haiwen Xi , Wenzhong Zhu , Olle Heinonen
IPC分类号： H01L29/82
CPC分类号： G01R33/093 , B82Y25/00 , G01R33/1284 , G11C11/161 , G11C11/1675
摘要： A spin-transfer torque memory unit includes a free magnetic layer having a magnetic easy axis; a reference magnetic element having a magnetization orientation that is pinned in a reference direction; an electrically insulating and non-magnetic tunneling barrier layer separating the free magnetic layer from the magnetic reference element; and a compensation element adjacent to the free magnetic layer. The compensation element applies a bias field on the magnetization orientation of the free magnetic layer. The bias field is formed of a first vector component parallel to the easy axis of the free magnetic layer and a second vector component orthogonal to the easy axis of the free magnetic layer. The bias field reduces a write current magnitude required to switch the direction of the magnetization orientation of the free magnetic layer.
摘要翻译：自旋转移力矩存储单元包括具有易磁化轴的自由磁性层; 具有被固定在参考方向上的磁化取向的参考磁性元件; 将自由磁性层与磁性参考元件分离的电绝缘和非磁性隧道势垒层; 以及与自由磁性层相邻的补偿元件。补偿元件对自由磁性层的磁化取向施加偏置场。偏置场由平行于自由磁性层的容易轴的第一矢量分量和与自由磁性层的容易轴正交的第二矢量分量形成。偏置场减小了切换自由磁性层的磁化取向方向所需的写入电流幅度。

7. 发明申请

US20120241886A1 MAGNETIC STACK WITH OXIDE TO REDUCE SWITCHING CURRENT 有权
标题翻译：具有氧化物的磁性堆叠以减少切换电流
公开(公告)号：US20120241886A1
公开(公告)日：2012-09-27
申请号：US13491763
申请日：2012-06-08
申请人： Xiaohua Lou , Yuankai Zheng , Wenzhong Zhu , Wei Tian , Zheng Gao
发明人： Xiaohua Lou , Yuankai Zheng , Wenzhong Zhu , Wei Tian , Zheng Gao
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/1659 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F41/303 , H01L43/12
摘要： A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.
摘要翻译：具有铁磁自由层的磁性堆叠，在第一温度下为反铁磁性且在比第一温度高的第二温度下为非磁性的金属氧化物层，铁磁性固定基准层和非磁性间隔层之间，层和参考层。在写入过程中，金属氧化物层是非磁性的。对于诸如磁性隧道结电池的磁存储器单元，金属氧化物层提供降低的开关电流。

8. 发明授权

US08217478B2 Magnetic stack with oxide to reduce switching current 有权
标题翻译：磁性堆叠与氧化物，以减少开关电流
公开(公告)号：US08217478B2
公开(公告)日：2012-07-10
申请号：US12425466
申请日：2009-04-17
申请人： Xiaohua Lou , Yuankai Zheng , Wenzhong Zhu , Wei Tian , Zheng Gao
发明人： Xiaohua Lou , Yuankai Zheng , Wenzhong Zhu , Wei Tian , Zheng Gao
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , G11C11/16 , G11C11/1659 , G11C11/1675 , H01F10/3254 , H01F10/3268 , H01F41/303 , H01L43/12
摘要： A magnetic stack having a ferromagnetic free layer, a metal oxide layer that is antiferromagnetic at a first temperature and non-magnetic at a second temperature higher than the first temperature, a ferromagnetic pinned reference layer, and a non-magnetic spacer layer between the free layer and the reference layer. During a writing process, the metal oxide layer is non-magnetic. For magnetic memory cells, such as magnetic tunnel junction cells, the metal oxide layer provides reduced switching currents.
摘要翻译：具有铁磁自由层的磁性堆叠，在第一温度下为反铁磁性且在比第一温度高的第二温度下为非磁性的金属氧化物层，铁磁性固定基准层和非磁性间隔层之间，层和参考层。在写入过程中，金属氧化物层是非磁性的。对于诸如磁性隧道结电池的磁存储器单元，金属氧化物层提供降低的开关电流。

9. 发明授权

US08194444B2 Spin-transfer torque memory self-reference read method 有权
标题翻译：自旋转矩记忆自参考读取方式
公开(公告)号：US08194444B2
公开(公告)日：2012-06-05
申请号：US12968441
申请日：2010-12-15
申请人： Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
发明人： Yuankai Zheng , Yiran Chen , Xiaobin Wang , Zheng Gao , Dimitar V. Dimitrov , Wenzhong Zhu , Yong Lu
IPC分类号： G11C11/14 , G11C11/00 , G11C7/00 , G11C7/02
CPC分类号： G11C11/1673
摘要： Self-reference reading a magnetic tunnel junction data cell methods are disclosed. An illustrative method includes applying a read voltage across a magnetic tunnel junction data cell and forming a read current. The magnetic tunnel junction data cell has a first resistance state. The read voltage is sufficient to switch the magnetic tunnel junction data cell resistance. The method includes detecting the read current and determining if the read current remains constant during the applying step. If the read current remains constant during the applying step, then the first resistance state of the magnetic tunnel junction data cell is the resistance state that the read voltage was sufficient to switch the magnetic tunnel junction data cell to.
摘要翻译：公开了自参考读取磁隧道结数据单元方法。一种说明性方法包括在磁性隧道结数据单元上施加读取电压并形成读取电流。磁性隧道结数据单元具有第一电阻状态。读取电压足以切换磁性隧道结数据单元电阻。该方法包括检测读取电流并确定在施加步骤期间读取电流是否保持恒定。如果在施加步骤期间读取电流保持恒定，则磁性隧道结数据单元的第一电阻状态是读取电压足以将磁性隧道结数据单元切换到的电阻状态。

10. 发明申请

US20120014175A1 Magnetic Tunnel Junction and Memristor Apparatus 有权
标题翻译：磁隧道结和忆阻器
公开(公告)号：US20120014175A1
公开(公告)日：2012-01-19
申请号：US13241381
申请日：2011-09-23
申请人： Xiaobin Wang , Yiran Chen , Alan Wang , Haiwen Xi , Wenzhong Zhu , Hai Li , Hongyue Liu
发明人： Xiaobin Wang , Yiran Chen , Alan Wang , Haiwen Xi , Wenzhong Zhu , Hai Li , Hongyue Liu
IPC分类号： G11C11/00 , G01R27/14 , G01R33/12
CPC分类号： G01R33/098 , G11C11/1673 , G11C11/1675 , G11C13/003 , G11C2213/56 , G11C2213/76 , H01L27/224 , H01L43/08
摘要： A magnetic memory device includes a magnetic tunnel junction having a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation and a memristor solid state element electrically coupled to the magnetic tunnel junction. The memristor has a device response that is an integrated voltage versus an integrated current.
摘要翻译：磁存储器件包括具有磁化取向的自由磁性层的磁性隧道结，其磁化取向可在高电阻状态磁化取向和低电阻状态磁化取向之间切换，以及与磁性隧道结电耦合的忆阻体固态元件。忆阻器具有集成电压与集成电流的器件响应。

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