专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

WO0197249A2 PLASMA ADDRESSED DISPLAY DEVICE WITH A FUNCTION OF CONTROLLING PARTIAL PRESSURE OF DOPANT GAS 审中-公开
标题翻译：具有控制氡气部分压力的功能的等离子体寻址显示装置
公开(公告)号：WO0197249A2
公开(公告)日：2001-12-20
申请号：PCT/EP0106750
申请日：2001-06-13
申请人： KONINKL PHILIPS ELECTRONICS NV , WEL PIETER V D
发明人： VAN DER WEL PIETER
IPC分类号： G02F1/1333 , G02F1/133 , G09G3/36 , H01J17/20 , H01J17/48 , H01J17/00
CPC分类号： G02F1/13334 , H01J17/22 , H01J17/48 , H01J2217/4025
摘要： The object of the invention is to provide a plasma addressed display device which can adapt the amount of dopant gas released or absorbed by the storage material to a changing real-operating/environment conditions of the display device in order to control the partial pressure of the dopant gas in the channel. Configuration: A plasma addressed display device comprising: a channel substrate (2) provided with an array of interconnected longitudinal channel chambers; a cover sheet (4) extending over the channel chambers (30) and making seals to the channel chambers on a side of an upper face of the chamber, whereby the channel substrate and the cover sheet define sealed channel chambers; a pair of electrodes (3a,3c) located in each sealed channel chamber for selectively ionizing a gas within the channel chamber; a dopant source (53) having a storage material that reversibly absorbs and releases a dopant gas to be mixed with a primary ionizable gas in the sealed channel chambers; and a heater (5H) for heating the storage material. The device is provided with a feedback loop (100-103, 5H) for a control of partial pressure of the dopant gas within the sealed channel chambers, the feedback loop comprising: measurement means (100,101) for measuring a value of a decay time of an electrical conductivity in at least one of the channel chambers from turning off the plasma in the channel chamber; and control means (102, 103) for controlling a temperature of the storage material through the heater on the basis of the measured value so that the decay time is within a predetermined range.
摘要翻译：本发明的目的是提供一种等离子体寻址的显示装置，其可以使由存储材料释放或吸收的掺杂剂气体的量适应于显示装置的变化的实际操作/环境条件，以便控制显示装置的分压通道中的掺杂气体。配置：等离子体寻址的显示装置，包括：通道基板（2），设置有互连的纵向通道腔的阵列; 在所述通道室（30）上延伸并且在所述室的上表面的侧面上的所述通道室上形成密封的盖板（4），由此所述通道基板和所述盖板限定密封的通道室; 位于每个密封通道室中的一对电极（3a，3c），用于选择性地离子化通道腔内的气体; 掺杂剂源（53），其具有可逆吸收和释放与所述密封通道室中的主要可离子化气体混合的掺杂剂气体的储存材料; 和用于加热储存材料的加热器（5H）。该装置设置有用于控制密封通道室内的掺杂剂气体的分压的反馈回路（100-103,5H），所述反馈回路包括：测量装置（100,101），用于测量腐蚀时间的衰减值在至少一个通道室中的电导率从通道室中的等离子体截止; 以及控制装置（102,103），用于根据测量值控制通过加热器的储存材料的温度，使得衰减时间在预定范围内。

IPRDB

热门服务

关于我们

友情链接

联系方式