专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

GB2398361B Control valve for a pneumatic cylinder 未知
公开(公告)号：GB2398361B
公开(公告)日：2006-04-19
申请号：GB0303178
申请日：2003-02-12
申请人： WARD ALLAN
发明人： WARD ALLAN
IPC分类号： F16K3/26 , B23K5/08 , B23K11/31 , F15B11/02 , F15B11/044 , F15B15/20 , F15B15/22

2. 发明专利

GB190519868A Removable Horseshoe 未知
公开(公告)号：GB190519868A
公开(公告)日：1905-10-19
申请号：GB190519868D
申请日：1905-10-02
申请人： WARD ALLAN ROSWELL
发明人： WARD ALLAN ROSWELL
摘要： 19,868. Ward, A. R. March 29, [date applied for under Patents Act, 1901]. Fixing; calles. - A removable horse - shoe A, Fig. 2, is fixed to the hoof by a toggle piece F, the ends of which engage in recesses formed in the heels. The toggle piece is provided with prongs f Fig. 3, which enter holes in the hoof and may also be provided with heel calks. The shoe A, Fig. 2, is further secured by a toe clip and by projections D fitting into recesses formed in the hoof.

3. 发明专利

GB2398361A Controlled extension, rapid retraction cylinder valve 未知
公开(公告)号：GB2398361A
公开(公告)日：2004-08-18
申请号：GB0303178
申请日：2003-02-12
申请人： WARD ALLAN
发明人： WARD ALLAN
IPC分类号： B23K5/08 , B23K11/31 , F15B11/02 , F15B11/044 , F15B15/20 , F15B15/22 , F16K3/26
摘要： A control valve 10 for pneumatic cylinder 12 having piston 18, forward stroke first chamber 20 and second return stroke chamber 22 comprises valve block 36 connectable to the second chamber and spool 48 moveable axially therein, a first conduit 38d through the block 36 and communicating with the second chamber. The first conduit includes an axial passage through the spool and is controlled by block and spool valve surfaces. Spool surface 57 through which the axial passage passes is exposed to first conduit fluid and biasses the spool in a first axial direction to close the first conduit. A spring or pilot pressure 49 returns the spool in an opposite direction to open the conduit and a restricted bleed conduit 40 by-passes the first conduit. Providing the spool with an axial passage allows easy adjustment of the spool pressure surface area by selecting the axial passage size and thereby the return pressure at which the valve opens.

4. 发明专利

GB0303178D0 Control valve for a pneumatic cylinder 未知
公开(公告)号：GB0303178D0
公开(公告)日：2003-03-19
申请号：GB0303178
申请日：2003-02-12
申请人： WARD ALLAN
IPC分类号： B23K5/08 , B23K11/31 , F15B11/02 , F15B11/044 , F15B15/20 , F15B15/22

5. 发明申请

WO2010132403A1 SCHOTTKY DIODES CONTAINING HIGH BARRIER METAL ISLANDS IN A LOW BARRIER METAL LAYER AND METHODS OF FORMING THE SAME 审中-公开
标题翻译：在低阻挡金属层中含有高阻挡金属岛的肖特基二极管及其形成方法
公开(公告)号：WO2010132403A1
公开(公告)日：2010-11-18
申请号：PCT/US2010/034318
申请日：2010-05-11
申请人： CREE, INC. , HENNING, Jason Patrick , WARD, Allan
发明人： HENNING, Jason Patrick , WARD, Allan
IPC分类号： H01L21/04 , H01L29/24 , H01L29/47 , H01L29/872
CPC分类号： H01L21/0495 , H01L29/1608 , H01L29/47 , H01L29/872
摘要： Fabrication of a Schottky diodes may include providing a Schottky contact layer containing a low barrier metal layer with spaced apart high barrier metal islands therein on a first surface of a substrate. A diode contact is formed on a second surface of the substrate that is opposite to the first surface. Formation of the Schottky contact layer may include providing a liquid mixture of a high barrier metal and a low barrier metal on the first surface of the substrate. Temperature and/or relative concentrations of the high and low barrier metals in the liquid mixture may be controlled to cause regions of the high barrier metal to solidify within the liquid mixture and agglomerate to form the spaced apart high barrier metal islands while inhibiting solidification of the low barrier metal. The temperature and relative concentrations may then be controlled to cause the low barrier metal to solidify and form the low barrier metal layer containing the high barrier metal islands.
摘要翻译：肖特基二极管的制造可以包括在衬底的第一表面上提供包含低阻挡金属层的肖特基接触层，其间具有间隔开的高阻挡金属岛。在基板的与第一表面相对的第二表面上形成二极管接触。肖特基接触层的形成可以包括在衬底的第一表面上提供高阻挡金属和低阻挡金属的液体混合物。可以控制液体混合物中高阻隔金属和低阻挡金属的温度和/或相对浓度，以使高阻隔金属的区域在液体混合物内凝固并附聚，形成间隔开的高阻隔金属岛，同时抑制低阻隔金属。然后可以控制温度和相对浓度以使低阻挡金属固化并形成含有高阻隔金属岛的低阻挡金属层。

6. 发明申请

WO2007081528A8 ENVIRONMENTALLY ROBUST PASSIVATION STRUCTURES FOR HIGH-VOLTAGE SILICON CARBIDE SEMICONDUCTOR DEVICES 审中-公开
标题翻译：用于高电压碳化硅半导体器件的环境稳定的钝化结构
公开(公告)号：WO2007081528A8
公开(公告)日：2008-10-02
申请号：PCT/US2006048817
申请日：2006-12-21
申请人： CREE INC , WARD ALLAN III , HENNING JASON PATRICK
发明人： WARD ALLAN III , HENNING JASON PATRICK
IPC分类号： H01L29/24 , H01L21/04 , H01L21/314
CPC分类号： H01L21/3185 , H01L21/045 , H01L21/3145 , H01L21/318 , H01L29/1608 , H01L29/2003 , H01L29/24 , H01L29/405 , H01L29/6606 , H01L29/732 , H01L29/74 , H01L29/78 , H01L29/868 , H01L29/872
摘要： An improved termination structure for high field semiconductor devices in silicon carbide is disclosed. The termination structure includes a silicon carbide-based device for high-field operation, an active region in the device, an edge termination passivation for the active region, in which the edge termination passivation includes, an oxide layer on at least some of the silicon carbide portions of the device for satisfying surface states and lowering interface density, a non-stoichiometric layer of silicon nitride on the oxide layer for avoiding the incorporation of hydrogen and for reducing parasitic capacitance and minimizing trapping, and, a stoichiometric layer of silicon nitride on the nonstoichiometric layer for encapsulating the. nonstoichiometric layer and the oxide layer.
摘要翻译：公开了一种用于碳化硅中的高场半导体器件的改进的端接结构。端接结构包括用于高场操作的基于碳化硅的器件，器件中的有源区，用于有源区的边缘终止钝化，其中边缘终端钝化包括在至少一些硅上的氧化物层用于满足表面状态和降低界面密度的器件的碳化物部分，氧化物层上的非化学计量的氮化硅层，用于避免引入氢并减少寄生电容并最小化陷阱，以及化学计量的氮化硅层用于封装的非化学计量层。非化学计量层和氧化物层。

7. 发明申请

WO2004072487A1 CONTROL VALVE FOR A PNEUMATIC CYLINDER 审中-公开
标题翻译：气动缸控制阀
公开(公告)号：WO2004072487A1
公开(公告)日：2004-08-26
申请号：PCT/GB2004/000536
申请日：2004-02-12
申请人： WARD, Allan
发明人： WARD, Allan
IPC分类号： F15B11/044
CPC分类号： B23K11/31 , B23K5/08 , F15B11/022 , F15B11/0445 , F15B15/202 , F15B15/22 , F15B2211/40515 , F15B2211/41527 , F15B2211/428 , F15B2211/455 , F15B2211/46 , F15B2211/5753 , F15B2211/5756 , F15B2211/775
摘要： The present invention includes a control valve (10) for a pneumatic cylinder (12) having a piston (18), a first chamber (20) to be pressurised to effect a forward stroke of the piston and a second oppositely acting chamber (22) to be pressurised to effect a return stroke of the piston (18). The control valve (10) comprises a valve block (36) connectable to the second chamber (22), and has a valve spool (48) moveable axially therein. The control valve (10) also comprises a first conduit (38) through the block (36) and in fluid communication with the second chamber (22) of the cylinder (12) when attached thereto, where the first conduit (38) includes an axial passage through the spool (48) and is controlled by valve surfaces of the valve block (36) and spool (48). A pressure surface (56) of the spool (48) through which the axial passage passes is exposed to pressure fluid in the first conduit (38) such that pressure applied to the pressure surface (56) biasses the valve spool (48) in a first axial direction to maintain the first conduit (38) closed. The control valve (10) also comprises means for returning the spool in an opposite axial direction to open the first conduit (38), and a restricted bleed conduit (40) bypassing the first conduit (38). By providing the valve spool (48) with an axial passage it is possible easily to tune (adjust) the area of the pressure surface (56) of the spool (48) for a particular cylinder by suitably selecting the size of the axial passage: for a given valve spool, the larger the passage, the smaller the area of the pressure surface, and thereby the return pressure at which the valve opens can be selected.
摘要翻译：本发明包括具有活塞（18）的气动缸（12）的控制阀（10），被加压以实现活塞向前行程的第一室（20）和第二相对作用室（22），被加压以实现活塞（18）的返回行程。控制阀（10）包括可连接到第二室（22）的阀块（36），并且具有可在其中轴向移动的阀芯（48）。控制阀（10）还包括通过该块（36）的第一导管（38）并与其连接的气缸（12）的第二腔室（22）流体连通，其中第一导管（38）包括通过阀芯（48）的轴向通过并且由阀块（36）和阀芯（48）的阀表面控制。轴向通道穿过的卷轴（48）的压力表面（56）暴露于第一导管（38）中的压力流体，使得施加到压力表面（56）的压力将阀芯（48）在一个第一轴向保持第一导管（38）关闭。控制阀（10）还包括用于沿相反的轴向返回阀芯以打开第一管道（38）的装置和绕过第一管道（38）的限制排放导管（40）。通过为阀芯（48）提供轴向通道，可以通过适当地选择轴向通道的尺寸来容易地调整（调整）用于特定气缸的阀芯（48）的压力表面（56）的面积：对于给定的阀芯，通道越大，压力表面的面积越小，从而可以选择阀打开的返回压力。

8. 发明申请

WO2013119555A2 MOUNTING CLAMP AND MOUNTING CLAMP CONFIGURATION FOR PHOTOVOLTAIC MODULE INSTALLATION 审中-公开
标题翻译：安装光伏组件的安装夹具和安装夹具配置
公开(公告)号：WO2013119555A2
公开(公告)日：2013-08-15
申请号：PCT/US2013/024755
申请日：2013-02-05
申请人： FIRST SOLAR, INC. , ZHAO, Zhibo , BULLER, Benyamin , HWANG, David , MARINSKIY, Dmitriy , KHATRI, Muhammad , ZHANG, Zhengjue , WARD, Allan, III
发明人： ZHAO, Zhibo , BULLER, Benyamin , HWANG, David , MARINSKIY, Dmitriy , KHATRI, Muhammad , ZHANG, Zhengjue , WARD, Allan, III
IPC分类号： H01L31/042 , B23P19/00
CPC分类号： H01L31/0422 , B23P19/00 , F24S25/37 , F24S25/634 , F24S2025/6003 , H01L31/18 , H02S20/00 , H02S40/36 , Y02E10/47 , Y02E10/50 , Y10T29/49826
摘要： Disclosed are photovoltaic module mounting assemblies with mounting clamps for connecting multiple photovoltaic modules into a photovoltaic array. One embodiment of the mounting assembly includes mounting clamps that are positioned on the mounting assembly parallel to the scribe lines of the module. Another embodiment of the mounting assembly uses mounting clamps that are configured to hold a portion of the module at a predetermined distance away from the photovoltaic cells of the module.
摘要翻译：公开了具有用于将多个光伏模块连接到光伏阵列中的安装夹具的光伏模块安装组件。安装组件的一个实施例包括安装夹具，其平行于模块的划线定位在安装组件上。安装组件的另一实施例使用安装夹具，其被配置为将模块的一部分保持在远离模块的光伏电池的预定距离处。

9. 发明申请

WO2007081528A3 ENVIRONMENTALLY ROBUST PASSIVATION STRUCTURES FOR HIGH-VOLTAGE SILICON CARBIDE SEMICONDUCTOR DEVICES 审中-公开
公开(公告)号：WO2007081528A3
公开(公告)日：2007-07-19
申请号：PCT/US2006/048817
申请日：2006-12-21
申请人： CREE, INC. , WARD, Allan, III , HENNING, Jason, Patrick
发明人： WARD, Allan, III , HENNING, Jason, Patrick
IPC分类号： H01L29/24 , H01L21/04 , H01L21/314
摘要： An improved termination structure for high field semiconductor devices in silicon carbide is disclosed. The termination structure includes a silicon carbide-based device for high-field operation, an active region in the device, an edge termination passivation for the active region, in which the edge termination passivation includes, an oxide layer on at least some of the silicon carbide portions of the device for satisfying surface states and lowering interface density, a non-stoichiometric layer of silicon nitride on the oxide layer for avoiding the incorporation of hydrogen and for reducing parasitic capacitance and minimizing trapping, and, a stoichiometric layer of silicon nitride on the nonstoichiometric layer for encapsulating the. nonstoichiometric layer and the oxide layer.

10. 发明申请

WO2007084282A1 EDGE TERMINATION STRUCTURES FOR SILICON CARBIDE DEVICES AND METHODS OF FABRICATING SILICON CARBIDE DEVICES INCORPORATING SAME 审中-公开
标题翻译：硅碳化物装置的边缘终止结构及其制造方法制造含有碳化硅器件的方法
公开(公告)号：WO2007084282A1
公开(公告)日：2007-07-26
申请号：PCT/US2007/000471
申请日：2007-01-08
申请人： CREE, INC. , RYU, Sei-Hyung , AGARWAL, Anant K. , WARD, Allan
发明人： RYU, Sei-Hyung , AGARWAL, Anant K. , WARD, Allan
IPC分类号： H01L29/06
CPC分类号： H01L29/0619 , H01L21/0445 , H01L23/3192 , H01L29/0615 , H01L29/063 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/872 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： An edge termination structure for a silicon carbide semiconductor device includes a plurality of spaced apart concentric floating guard rings (34) in a silicon carbide layer that at least partially surround a silicon carbide-based junction, an insulating layer on the floating guard rings, and a silicon carbide surface charge compensation region (38) between the floating guard rings and adjacent the surface of the silicon carbide layer. A silicon nitride layer (56) is on the silicon carbide layer, and an organic protective layer (66) is on the silicon nitride layer. An oxide layer may be between the silicon nitride layer and the surface of the silicon carbide layer. Methods of forming edge termination structures are also disclosed.
摘要翻译：用于碳化硅半导体器件的边缘终止结构包括在碳化硅层中的多个间隔开的同心浮动保护环（34），其至少部分地围绕基于碳化硅的结，在浮动保护环上的绝缘层，以及在浮动保护环之间并且邻近碳化硅层的表面的碳化硅表面电荷补偿区域（38）。氮化硅层（56）位于碳化硅层上，有机保护层（66）位于氮化硅层上。氧化物层可以在氮化硅层和碳化硅层的表面之间。还公开了形成边缘端接结构的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式