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2. 发明申请

WO2010030050A1 A MANUFACTURING METHOD OF A THIN FILM ORGANIC SEMICONDUCTOR USING A PHASE SEPARATION OF BLEND OF ORGANIC SEMICONDUCTOR/ INSULATING POLYMER AND ORGANIC THIN FILM TRANSISTER 审中-公开
标题翻译：使用有机半导体/绝缘聚合物和有机薄膜晶体管的相分离的薄膜有机半导体的制造方法
公开(公告)号：WO2010030050A1
公开(公告)日：2010-03-18
申请号：PCT/KR2008/005427
申请日：2008-09-12
申请人： POSTECH ACADEMY-INDUSTRY FOUNDATION , CHO, Kil Won , LEE, Wi Hyoung , QIU, Long Zhen , LIM, Jung Ah , WANG, Xiao Hong
发明人： CHO, Kil Won , LEE, Wi Hyoung , QIU, Long Zhen , LIM, Jung Ah , WANG, Xiao Hong
IPC分类号： H01L51/00
CPC分类号： H01L51/0566 , H01L51/0036 , H01L51/052 , H01L51/0545
摘要： The present invention relates to a method of forming a multilayered thin film used to manufacture an organic thin film transistor, and, more particularly, to a method of simultaneously forming an organic semiconductor thin layer and a dielectric thin layer using vertical phase separation, and a high-performance organic thin film transistor manufactured using the method. The multilayered thin film of the present invention is formed by coating a substrate with a mixed solution of an organic semiconductor and an insulating polymer having different surface energies and then vertically phase- separating the applied mixed solution. The multilayered thin film includes an organic semiconductor thin film formed on an insulating polymer thin film. The organic thin film transistor including the multilayered thin film according to the present invention can exhibit excellent performance even when a small amount of organic semiconductor is used. Further, since the insulating polymer thin film can be used as a dielectric layer of the organic thin film transistor, a process of forming the dielectric layer is not required, and the damage of a lower layer of the multilayered thin film, occurring when the multilayered thin film is formed through a solution process, can be prevented.
摘要翻译：本发明涉及一种形成用于制造有机薄膜晶体管的多层薄膜的方法，更具体地，涉及一种使用垂直相分离同时形成有机半导体薄层和电介质薄层的方法，以及使用该方法制造的高性能有机薄膜晶体管。本发明的多层薄膜通过用有机半导体和具有不同表面能的绝缘聚合物的混合溶液涂布基板，然后垂直相分离所施加的混合溶液而形成。多层薄膜包括形成在绝缘聚合物薄膜上的有机半导体薄膜。包括根据本发明的多层薄膜的有机薄膜晶体管即使在使用少量的有机半导体时也能表现出优异的性能。此外，由于绝缘聚合物薄膜可以用作有机薄膜晶体管的电介质层，因此不需要形成电介质层的过程，并且多层薄膜的下层的损伤发生在多层薄膜通过溶液法形成薄膜，可以防止。

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