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1. 发明申请

US20110021008A1 Directional Solid Phase Crystallization of Thin Amorphous Silicon for Solar Cell Applications 失效
标题翻译：用于太阳能电池应用的薄无定形硅的定向固相结晶
公开(公告)号：US20110021008A1
公开(公告)日：2011-01-27
申请号：US12507761
申请日：2009-07-22
申请人： Virendra V. RANA , Robert Z. Bachrach
发明人： Virendra V. RANA , Robert Z. Bachrach
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： H01L21/0262 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02573 , H01L21/02609 , H01L31/068 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521 , Y10T117/10
摘要： Embodiments of the present invention provide a method for converting a doped amorphous silicon layer deposited onto a crystalline silicon substrate into crystalline silicon having the same grain structure and crystal orientation as the underlying crystalline silicon substrate upon which the amorphous silicon was initially deposited. Additional embodiments of the present invention provide depositing a dielectric passivation layer onto the amorphous silicon layer prior to the conversion. A temperature gradient is provided at a temperature and for a time period sufficient to provide a desired p-n junction depth and dopant profile.
摘要翻译：本发明的实施例提供了一种将沉积在晶体硅衬底上的掺杂非晶硅层转换成具有与初始沉积非晶硅的下面的晶体硅衬底相同的晶粒结构和晶体取向的晶体硅的方法。本发明的另外的实施例提供了在转换之前在非晶硅层上沉积介电钝化层。在足以提供期望的p-n结深度和掺杂剂分布的温度和时间段提供温度梯度。

2. 发明授权

US07858427B2 Crystalline silicon solar cells on low purity substrate 失效
标题翻译：晶体硅太阳能电池在低纯度基板上
公开(公告)号：US07858427B2
公开(公告)日：2010-12-28
申请号：US12396909
申请日：2009-03-03
申请人： Virendra V. Rana
发明人： Virendra V. Rana
IPC分类号： H01L21/00 , H01L31/042 , H01L21/20
CPC分类号： H01L31/1872 , H01L31/02245 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method is provided for making a crystalline silicon solar cell on a low purity substrate by depositing p+-p-n+, or n+-n-p+ layers of amorphous silicon, depending on the type of wafer, on a crystalline silicon substrate, such as an upgraded metallurgical grade silicon substrate, with substrate vias of varying diameters formed thereon, annealing the stack of amorphous silicon layers to cause solid phase epitaxial crystallization, and metallizing the substrate assembly using standard metallization techniques. One embodiment of the present invention provides depositing a passivation layer onto the third deposited silicon layer subsequent to the crystallization. Another embodiment provides depositing a passivation layer on the back side of the substrate subsequent to crystallization and punching selected regions at the substrate vias prior to back metallization.
摘要翻译：提供了一种通过在晶体硅衬底上淀积p + -p-n +或n + -n-p +层非晶硅（取决于晶片的类型）来在低纯度衬底上制造晶体硅太阳能电池的方法，例如升级的冶金级硅衬底，其上形成有不同直径的衬底通孔，退火非晶硅层堆叠以引起固相外延结晶，以及使用标准金属化技术对衬底组件进行金属化。本发明的一个实施例提供了在结晶之后在第三沉积硅层上沉积钝化层。另一实施例提供了在后续金属化之后在衬底通孔上结晶并冲压所选择的区域之后，在衬底的背面上沉积钝化层。

3. 发明申请

US20100323503A1 INTEGRATED EMITTER FORMATION AND PASSIVATION 审中-公开
标题翻译：集成发射体形成和钝化
公开(公告)号：US20100323503A1
公开(公告)日：2010-12-23
申请号：US12872272
申请日：2010-08-31
申请人： Virendra V. Rana , Robert Z. Bachrach
发明人： Virendra V. Rana , Robert Z. Bachrach
IPC分类号： H01L21/22
CPC分类号： H01L21/02532 , H01L21/02667 , H01L31/02167 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the present invention provide a method for forming an emitter region in a crystalline silicon substrate and passivating the surface thereof by depositing a doped amorphous silicon layer onto the crystalline silicon substrate and thermally annealing the crystalline silicon substrate while oxidizing the surface thereof. In one embodiment, the deposited film is completely converted to oxide. In another embodiment, the doped amorphous silicon layer deposited onto the crystalline silicon substrate is converted into crystalline silicon having the same grain structure and crystal orientation as the underlying crystalline silicon substrate upon which the amorphous silicon was initially deposited during emitter formation. In one embodiment, at least a portion of the converted crystalline silicon is further converted into silicon dioxide during the emitter surface passivation.
摘要翻译：本发明的实施方式提供了一种在晶体硅衬底中形成发射极区域并通过在晶体硅衬底上沉积掺杂的非晶硅层并使晶体硅衬底氧化其表面进行热退火而钝化其表面的方法。在一个实施方案中，沉积的膜完全转化为氧化物。在另一个实施例中，沉积到晶体硅衬底上的掺杂非晶硅层被转换成具有与在发射极形成期间最初沉积非晶硅的下面的晶体硅衬底相同的晶粒结构和晶体取向的晶体硅。在一个实施例中，在发射极表面钝化期间，转化的晶体硅的至少一部分进一步转化成二氧化硅。

4. 发明申请

US20100075485A1 INTEGRATED EMITTER FORMATION AND PASSIVATION 有权
公开(公告)号：US20100075485A1
公开(公告)日：2010-03-25
申请号：US12234848
申请日：2008-09-22
申请人： Virendra V. Rana , Robert Z. Bachrach
发明人： Virendra V. Rana , Robert Z. Bachrach
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/02667 , H01L31/02167 , H01L31/1804 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： Embodiments of the present invention provide a method for forming an emitter region in a crystalline silicon substrate and passivating the surface thereof by depositing a doped amorphous silicon layer onto the crystalline silicon substrate and thermally annealing the crystalline silicon substrate while oxidizing the surface thereof. In one embodiment, the deposited film is completely converted to oxide. In another embodiment, the doped amorphous silicon layer deposited onto the crystalline silicon substrate is converted into crystalline silicon having the same grain structure and crystal orientation as the underlying crystalline silicon substrate upon which the amorphous silicon was initially deposited during emitter formation. In one embodiment, at least a portion of the converted crystalline silicon is further converted into silicon dioxide during the emitter surface passivation.

5. 发明授权

US07569462B2 Directional crystallization of silicon sheets using rapid thermal processing 失效
标题翻译：使用快速热处理的硅片的定向结晶
公开(公告)号：US07569462B2
公开(公告)日：2009-08-04
申请号：US11610049
申请日：2006-12-13
申请人： Virendra V. Rana , Robert Z. Bachrach
发明人： Virendra V. Rana , Robert Z. Bachrach
IPC分类号： H01L21/36
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： The present invention provides a method of recrystallizing a silicon sheet, and in particular recrystallizing a small grained silicon sheet to improve material properties such as grain size and orientation. According to one aspect, the method includes using rapid thermal processing (RTP) to melt and recrystallize one or more entire silicon sheet(s) in one heating sequence. According to another aspect, the method includes directionally controlling a temperature drop across the thickness of the sheet so as to facilitate the production of a small number of nuclei in the melted material and their growth into large grains. According to a further aspect, the invention includes a re-crystallization chamber in an overall process flow that enables high-throughput processing of silicon sheets having desired properties for applications such as photovoltaic modules.
摘要翻译：本发明提供了一种使硅片再结晶的方法，特别是重结晶小晶粒硅片以改善诸如晶粒尺寸和取向的材料性能。根据一个方面，该方法包括使用快速热处理（RTP）在一个加热顺序中熔融和重结晶一个或多个整个硅片。根据另一方面，该方法包括定向地控制跨越板的厚度的温度降，以便于在熔融材料中产生少量的核并且其生长成大的晶粒。根据另一方面，本发明包括在整个工艺流程中的再结晶室，其能够对具有用于诸如光伏模块的应用的所需性能的硅片进行高通量处理。

6. 发明授权

US09455362B2 Laser irradiation aluminum doping for monocrystalline silicon substrates 有权
标题翻译：激光照射铝掺杂单晶硅衬底
公开(公告)号：US09455362B2
公开(公告)日：2016-09-27
申请号：US13340903
申请日：2011-12-30
申请人： Mehrdad M. Moslehi , Virendra V. Rana , Pranav Anbalagan
发明人： Mehrdad M. Moslehi , Virendra V. Rana , Pranav Anbalagan
IPC分类号： H01L31/0236 , H01L31/068 , H01L21/225 , H01L21/268 , H01L31/0224 , H01L31/072 , H01L31/18
CPC分类号： H01L31/1804 , H01L21/2254 , H01L21/268 , H01L31/022441 , H01L31/02363 , H01L31/068 , H01L31/0682 , H01L31/072 , H01L31/1864 , H01L31/1892 , H01L31/1896 , Y02E10/547 , Y02P70/521
摘要： Methods for laser irradiation aluminum doping for monocrystalline silicon substrates are provided. According to one aspect of the disclosed subject matter, aluminum metal contacts are formed directly on a surface of a monocrystalline silicon substrate. The aluminum metal contact is selectively heated via laser irradiation, thereby causing the aluminum and a portion of the monocrystalline silicon substrate in proximity to the aluminum to reach a temperature sufficient to allow at least a portion of the silicon to dissolve in the aluminum. The aluminum and the portion of the monocrystalline silicon substrate in proximity to the aluminum is allowed to cool, thereby forming an aluminum-rich doped silicon layer on the monocrystalline silicon substrate.
摘要翻译：提供了用于单晶硅衬底的激光照射铝掺杂的方法。根据所公开的主题的一个方面，铝金属触点直接形成在单晶硅衬底的表面上。通过激光照射选择性地加热铝金属接触，从而使铝和一部分接近铝的单晶硅衬底达到足以使至少一部分硅溶解在铝中的温度。将铝和靠近铝的单晶硅衬底的部分冷却，从而在单晶硅衬底上形成富铝的掺杂硅层。

7. 发明申请

US20150140721A1 PATTERNING OF SILICON OXIDE LAYERS USING PULSED LASER ABLATION 有权
标题翻译：使用激光雷射消除氧化硅层的图案
公开(公告)号：US20150140721A1
公开(公告)日：2015-05-21
申请号：US14137172
申请日：2013-12-20
申请人： Mehrdad M. Moslehi , Virendra V. Rana , Pranav Anbalagan , Vivek Saraswat
发明人： Mehrdad M. Moslehi , Virendra V. Rana , Pranav Anbalagan , Vivek Saraswat
IPC分类号： H01L31/0236 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/02366 , B23K26/066 , B23K26/073 , B23K26/364 , B23K26/40 , B23K26/402 , B23K2103/172 , B23K2103/50 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/035281 , H01L31/0445 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/186 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译：公开了用于产生各种类型的异质结和同质结太阳能电池的各种激光处理方案。这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。公开了激光烧蚀技术，使基底硅基本上没有损坏。这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是平面或纹理/三维。这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

8. 发明授权

US08399331B2 Laser processing for high-efficiency thin crystalline silicon solar cell fabrication 有权
标题翻译：高效薄晶硅太阳能电池制造的激光加工
公开(公告)号：US08399331B2
公开(公告)日：2013-03-19
申请号：US13118295
申请日：2011-05-27
申请人： Mehrdad M. Moslehi , Virendra V. Rana , JianJun Liang , Pranav Anbalagan
发明人： Mehrdad M. Moslehi , Virendra V. Rana , JianJun Liang , Pranav Anbalagan
IPC分类号： H01L21/8222
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/02363 , H01L31/035281 , H01L31/0516 , H01L31/056 , H01L31/0682 , H01L31/0747 , H01L31/18 , H01L31/1884 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译：公开了用于生产各种类型的异质结和同质结太阳能电池的激光加工方案。这些方法包括基极和发射极接触开口，选择性掺杂和金属烧蚀。此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺制造的晶体硅衬底，其是平面的或纹理的/三维的。这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

9. 发明申请

US20120225515A1 LASER DOPING TECHNIQUES FOR HIGH-EFFICIENCY CRYSTALLINE SEMICONDUCTOR SOLAR CELLS 审中-公开
标题翻译：高效晶体半导体太阳能电池的激光掺杂技术
公开(公告)号：US20120225515A1
公开(公告)日：2012-09-06
申请号：US13340887
申请日：2011-12-30
申请人： Mehrdad M. Moslehi , Virendra V. Rana
发明人： Mehrdad M. Moslehi , Virendra V. Rana
IPC分类号： H01L31/18
CPC分类号： H01L31/1896 , B23K26/0608 , B23K26/066 , B23K26/0665 , B23K26/0676 , B23K26/073 , B23K26/0732 , B23K26/361 , B23K26/40 , B23K2103/10 , B23K2103/172 , B23K2103/50 , B23K2103/54 , B23K2103/56 , H01L21/31105 , H01L31/035281 , H01L31/046 , H01L31/0463 , H01L31/0465 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/0747 , H01L31/1804 , H01L31/1864 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译：公开了用于生产各种类型的异质结和同质结太阳能电池的各种激光处理方案。这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。公开了激光烧蚀技术，使基底硅基本上没有损坏。这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是平面或纹理/三维。这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

10. 发明申请

US20120171804A1 PATTERNING OF SILICON OXIDE LAYERS USING PULSED LASER ABLATION 有权
标题翻译：使用激光雷射消除氧化硅层的图案
公开(公告)号：US20120171804A1
公开(公告)日：2012-07-05
申请号：US13340877
申请日：2011-12-30
申请人： Mehrdad M. Moslehi , Virendra V. Rana , Pranav Anbalagan , Vivek Saraswat
发明人： Mehrdad M. Moslehi , Virendra V. Rana , Pranav Anbalagan , Vivek Saraswat
IPC分类号： H01L31/18
CPC分类号： H01L31/02366 , B23K26/066 , B23K26/073 , B23K26/364 , B23K26/40 , B23K26/402 , B23K2103/172 , B23K2103/50 , H01L31/02167 , H01L31/022441 , H01L31/02363 , H01L31/035281 , H01L31/0445 , H01L31/056 , H01L31/068 , H01L31/0682 , H01L31/18 , H01L31/1804 , H01L31/186 , H01L31/1896 , Y02E10/52 , Y02E10/547 , Y02P70/521
摘要： Various laser processing schemes are disclosed for producing various types of hetero junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.
摘要翻译：公开了用于产生各种类型的异质结和同质结太阳能电池的各种激光处理方案。这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。公开了激光烧蚀技术，使基底硅基本上没有损坏。这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是平面或纹理/三维。这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

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