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1. 发明申请

US20100162957A1 DEVICE FOR COATING A PLURALITY OF CLOSEST PACKED SUBSTRATES ARRANGED ON A SUSCEPTOR 审中-公开
标题翻译：用于涂覆多个封闭基板的装置安装在SUSCEPTOR上
公开(公告)号：US20100162957A1
公开(公告)日：2010-07-01
申请号：US12601234
申请日：2008-05-21
申请人： Adam Boyd , Victor Saywell , Jan Mulder , Olivier Feron , Johannes Käppeler
发明人： Adam Boyd , Victor Saywell , Jan Mulder , Olivier Feron , Johannes Käppeler
IPC分类号： C23C16/46 , C23C16/458
CPC分类号： C23C16/4583 , H01L21/68735 , H01L21/68757 , H01L21/68771
摘要： The invention relates to a device for coating a plurality of substrates (3) which are regularly arranged on a bearing surface (2) of a susceptor (1) associated to a process chamber (14), wherein the bearing surface (2) forms abutment flanks (5) for the edge mounting of each substrate (3). In order to reduce the free susceptor surface to a minimum, it is proposed that the abutment flanks of the lateral walls (5) are formed by bases (4) which project from the bearing surface (2) and are separated at a distance from one another. Said bases are arranged on the corner points (10) of a honeycomb structure and have an outline essentially corresponding to an equilateral triangle with inwardly curved sides (5).
摘要翻译：本发明涉及一种用于涂覆多个基板（3）的装置，其定期地布置在与处理室（14）相关联的基座（1）的支承表面（2）上，其中支承表面（2）形成支座用于每个基板（3）的边缘安装的侧面（5）。为了将自由基座表面最小化，提出侧壁（5）的邻接侧面由从轴承表面（2）突出的基部（4）形成，并且距离一个距离另一个。所述底座布置在蜂窝结构的角点（10）上，并且具有基本对应于具有向内弯曲侧面（5）的等边三角形的轮廓。

2. 发明申请

US20100170438A1 GAS DISTRIBUTOR COMPRISING A PLURALITY OF DIFFUSION-WELDED PANES AND A METHOD FOR THE PRODUCTION OF SUCH A GAS DISTRIBUTOR 审中-公开
标题翻译：包含多孔扩散焊丝的气体分布器和用于生产这种气体分配器的方法
公开(公告)号：US20100170438A1
公开(公告)日：2010-07-08
申请号：US12663272
申请日：2008-06-04
申请人： Victor Saywell , Chris Humby , Fred Crawley
发明人： Victor Saywell , Chris Humby , Fred Crawley
IPC分类号： C23C16/455 , B23K20/00 , B23K31/02
CPC分类号： B23K20/023 , B23K20/227 , B23K2101/045 , B23K2101/18 , B23K2103/05 , C23C16/45565 , C23C16/45572 , H01J37/3244
摘要： The invention relates to a gas distributor (1, 2) for a CVD reactor comprising two or more chambers (8, 9, 14), with supply lines ending therein, wherein at least one of the chambers (8, 9) forms a gas volume and is connected to gas outlet openings (23) associated with the bottom (2) of the gas distributor (1, 2) by means of a plurality of small tubes (11, 12, 13) crossing at least one other chamber (9, 14). For simplified production and technical enhancement, the gas distributor (1, 2), at least in the region of the small tubes (11, 12, 13), is made of a plurality of structured disks resting on top of each other, which are diffusion-welded to each other by pressure and temperature.
摘要翻译：本发明涉及一种用于CVD反应器的气体分配器（1,2），其包括两个或更多个腔室（8,9,14），其中供应管线终止于其中，其中至少一个腔室（8,9）形成气体并且通过与至少一个其他室（9）交叉的多个小管（11,12,13）连接到与气体分配器（1,2）的底部（2）相关联的气体出口开口（23），14）。为了简化生产和技术改进，气体分配器（1,2）至少在小管（11,12,13）的区域中由彼此顶部彼此搁置的多个结构化盘制成，通过压力和温度彼此扩散焊接。

3. 发明申请

US20060272578A1 CVD reactor comprising a photodiode array 有权
标题翻译：包括光电二极管阵列的CVD反应器
公开(公告)号：US20060272578A1
公开(公告)日：2006-12-07
申请号：US11505195
申请日：2006-08-16
申请人： John Mullins , Johannes Kaeppeler , Victor Saywell
发明人： John Mullins , Johannes Kaeppeler , Victor Saywell
IPC分类号： C23C16/00
CPC分类号： C23C16/52 , C23C16/45565 , C23C16/46
摘要： The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates, said device comprising a process chamber which is arranged in a reactor housing and comprises a substrate holder for receiving at least one substrate. A gas-admittance body is arranged opposite the substrate holder, said body comprising a gas-leak surface facing the substrate holder and provided with a plurality of essentially evenly distributed outlets for process gases to be introduced into the process chamber. In order to improve the observation of the surface temperature, the inventive device is provided with a plurality of sensors arranged to the rear of the outlets and respectively aligned with an associated outlet.
摘要翻译：本发明涉及一种用于在特别是晶体基底上沉积特别是结晶层的装置，所述装置包括一个处理室，该处理室设置在反应器壳体中并且包括用于容纳至少一个基板的基板支架。气体导纳体与衬底保持器相对地布置，所述主体包括面向衬底保持器的气体泄漏表面，并且设置有多个基本上均匀分布的用于工艺气体引入到处理室中的出口。为了改善对表面温度的观察，本发明的装置设置有多个传感器，其布置在出口的后部并分别与相关联的出口对准。

4. 发明授权

US08986453B2 Device for coating substrates disposed on a susceptor 有权
标题翻译：用于涂布设置在基座上的基板的装置
公开(公告)号：US08986453B2
公开(公告)日：2015-03-24
申请号：US12664648
申请日：2008-06-13
申请人： Johannes Käppeler , Adam Boyd , Victor Saywell , Jan Mulder , Olivier Feron
发明人： Johannes Käppeler , Adam Boyd , Victor Saywell , Jan Mulder , Olivier Feron
IPC分类号： B05C11/00 , C23C16/458 , C23C16/46 , C30B25/12 , H01L21/687
CPC分类号： C23C16/4586 , C23C16/4583 , C23C16/46 , C30B25/12 , H01L21/68735
摘要： The invention relates to a device for coating substrates having a process chamber (1) disposed in a reactor housing and a two-part, substantially cup-shaped susceptor (2, 3) disposed therein, forming an upper susceptor part (2) with the cup floor thereof having a flat plate (2′) and a lower susceptor part (3) with the cup side walls thereof, the outer side (4) of the plate (2′) of the upper susceptor part (2) facing upwards toward the process chamber (1) and forming a contact surface for at least one substrate, the upper susceptor part (2) contacting a front edge (3″) of the lower susceptor part (3) at the edge of said upper susceptor part (2), the lower susceptor part (3) being supported by a susceptor carrier (6), and heating zones (A, B, C) for heating the upper susceptor part (2) being disposed below the plate (2′). An advantageous refinement of the invention proposes that the upper susceptor part (2) be removable from the process chamber (1) separately from the lower susceptor part (3), and the joint (30) between the edge of the upper susceptor part (2) and the front edge (3″) of the lower susceptor part (3) be formed as a heat conduction barrier.
摘要翻译：本发明涉及一种用于涂覆基材的装置，其具有设置在反应器壳体中的处理室（1）和设置在反应器壳体中的两部分基本杯形基座（2,3），形成上基座部分（2），其中其底板具有平板（2'）和具有杯侧壁的下基座部分（3），上托架部分（2）的板（2'）的外侧（4）朝向所述处理室（1）并且形成用于至少一个基板的接触表面，所述上基座部分（2）在所述上基座部分（2）的边缘处接触所述下基座部分（3）的前边缘（3“），），下感受器部分（3）由基座托架（6）支撑，加热区（A，B，C）用于加热设置在板（2'）下方的上基座部分（2）。本发明的有益改进提出，上基座部分（2）可以与下基座部分（3）分离地从处理室（1）移除，并且上基座部分（2）的边缘之间的接头（30））和下基座部（3）的前缘（3“）形成为导热屏障。

5. 发明申请

US20150007771A1 GAS INLET MEMBER OF A CVD REACTOR 有权
标题翻译：气体入口成员的CVD反应堆
公开(公告)号：US20150007771A1
公开(公告)日：2015-01-08
申请号：US14232246
申请日：2012-07-05
申请人： Hugo Silva , Nico Jouault , Victor Saywell , Fred Crawley , Martin Dauelsberg , Johannes Lindner
发明人： Hugo Silva , Nico Jouault , Victor Saywell , Fred Crawley , Martin Dauelsberg , Johannes Lindner
IPC分类号： C23C16/455
CPC分类号： C23C16/45591 , C23C16/301 , C23C16/45565 , C23C16/45572 , C23C16/45574 , C23C16/45576 , C30B25/14
摘要： A gas inlet member of a CVD reactor includes a gas inlet housing having a gas distribution volume supplied with a process gas by a feed line and a multiplicity of gas lines, each formed as a tube and engaging openings of a gas outlet plate arranged in front of an inlet housing wall, and through which the process gas enters a process chamber. A coolant chamber adjoins the gas inlet housing wall and a coolant cools the gas inlet housing wall and outlet ends of the gas lines that are in heat-conductive contact with the gas inlet housing wall. The gas outlet plate is thereby thermally decoupled from the gas inlet housing wall such that the gas outlet plate, which is acted on by radiation heat coming from the process chamber, heats up more intensely than the outlet ends which extend into the openings of the gas outlet plate.
摘要翻译： CVD反应器的气体入口构件包括：气体入口壳体，其具有通过进料管线供给处理气体的气体分配体积和多个气体管线，每个气体管线形成为管和布置在前面的气体出口板的接合开口的入口壳体壁，并且工艺气体通过入口壳体壁进入处理室。冷却剂室邻接气体入口壳体壁，并且冷却剂冷却气体入口壳体壁和与气体入口壳体壁导热接触的气体管线的出口端。气体出口板因此与气体入口壳体壁热分离，使得由来自处理室的辐射热作用的气体出口板比延伸到气体开口中的出口端更加强烈地加热出口板。

6. 发明申请

US20100186666A1 DEVICE FOR COATING SUBSTRATES DISPOSED ON A SUSCEPTOR 有权
标题翻译：用于涂覆在SUSCEPTOR上的基材的设备
公开(公告)号：US20100186666A1
公开(公告)日：2010-07-29
申请号：US12664648
申请日：2008-06-13
申请人： Johannes Kappeler , Adam Boyd , Victor Saywell , Jan Mulder , Olivier Feron
发明人： Johannes Kappeler , Adam Boyd , Victor Saywell , Jan Mulder , Olivier Feron
IPC分类号： B05C11/00
CPC分类号： C23C16/4586 , C23C16/4583 , C23C16/46 , C30B25/12 , H01L21/68735
摘要： The invention relates to a device for coating substrates having a process chamber (1) disposed in a reactor housing and a two-part, substantially cup-shaped susceptor (2, 3) disposed therein, forming an upper susceptor part (3) with the cup floor thereof having a flat plate (2) and a lower susceptor part (3) with the cup side walls thereof, the outer side (4) of the plate (2) of the upper susceptor part (2) facing upwards toward the process chamber (1) and forming a contact surface for at least one substrate, the upper susceptor part (2) contacting a front edge (3′) of the lower susceptor part (3) at the edge of said upper susceptor part (2), the lower susceptor part (3) being supported by a susceptor carrier (6), and heating zones (A, B, C) for heating the upper susceptor part (2) being disposed below the plate (2′). An advantageous refinement of the invention proposes that the upper susceptor part (2) be removable from the process chamber (1) separately from the lower susceptor part (3), and the joint between the edge of the upper susceptor part (2) and the front edge (3′) of the lower susceptor part (3) be formed as a heat conduction barrier.
摘要翻译：本发明涉及一种用于涂覆基材的装置，其具有设置在反应器壳体中的处理室（1）和设置在反应器壳体中的两部分基本杯形基座（2,3），形成上基座部分（3），其中其底板具有平板（2）和具有杯侧壁的下基座部分（3），上托架部分（2）的板（2）的外侧（4）朝向处理并且形成用于至少一个基板的接触表面，所述上基座部分（2）在所述上基座部分（2）的边缘处接触下基座部分（3）的前边缘（3'），下基座部分（3）由基座托架（6）支撑，加热区（A，B，C）用于加热设置在板（2'）下方的上基座部分（2）。本发明的有益改进提出，上基座部分（2）可以与下基座部分（3）分离地从处理室（1）移除，并且上基座部分（2）的边缘与下感受器部分（3）的前边缘（3'）形成为导热屏障。

7. 发明授权

US09587312B2 Gas inlet member of a CVD reactor 有权
标题翻译： CVD反应器的气体入口构件
公开(公告)号：US09587312B2
公开(公告)日：2017-03-07
申请号：US14232246
申请日：2012-07-05
申请人： Hugo Silva , Nico Jouault , Victor Saywell , Fred Crawley , Martin Dauelsberg , Johannes Lindner
发明人： Hugo Silva , Nico Jouault , Victor Saywell , Fred Crawley , Martin Dauelsberg , Johannes Lindner
IPC分类号： C23C16/455 , C23C16/30 , C30B25/14
CPC分类号： C23C16/45591 , C23C16/301 , C23C16/45565 , C23C16/45572 , C23C16/45574 , C23C16/45576 , C30B25/14
摘要： A gas inlet member of a CVD reactor includes a gas inlet housing having a gas distribution volume supplied with a process gas by a feed line and a multiplicity of gas lines, each formed as a tube and engaging openings of a gas outlet plate arranged in front of an inlet housing wall, and through which the process gas enters a process chamber. A coolant chamber adjoins the gas inlet housing wall and a coolant cools the gas inlet housing wall and outlet ends of the gas lines that are in heat-conductive contact with the gas inlet housing wall. The gas outlet plate is thereby thermally decoupled from the gas inlet housing wall such that the gas outlet plate, which is acted on by radiation heat coming from the process chamber, heats up more intensely than the outlet ends which extend into the openings of the gas outlet plate.
摘要翻译： CVD反应器的气体入口构件包括：气体入口壳体，其具有通过进料管线供给处理气体的气体分配体积和多个气体管线，每个气体管线形成为管和布置在前面的气体出口板的接合开口的入口壳体壁，并且工艺气体通过入口壳体壁进入处理室。冷却剂室邻接气体入口壳体壁，并且冷却剂冷却气体入口壳体壁和与气体入口壳体壁导热接触的气体管线的出口端。气体出口板因此与气体入口壳体壁热分离，使得由来自处理室的辐射热作用的气体出口板比延伸到气体开口中的出口端更加强烈地加热出口板。

8. 发明授权

US08052796B2 CVD reactor comprising a photodiode array 有权
标题翻译：包括光电二极管阵列的CVD反应器
公开(公告)号：US08052796B2
公开(公告)日：2011-11-08
申请号：US11505195
申请日：2006-08-16
申请人： John Tomlinson Mullins , Johannes Kaeppeler , Victor Saywell
发明人： John Tomlinson Mullins , Johannes Kaeppeler , Victor Saywell
IPC分类号： C23C16/00
CPC分类号： C23C16/52 , C23C16/45565 , C23C16/46
摘要： The invention relates to a device for depositing especially crystalline layers on especially crystalline substrates, said device comprising a process chamber which is arranged in a reactor housing and comprises a substrate holder for receiving at least one substrate. A gas-admittance body is arranged opposite the substrate holder, said body comprising a gas-leak surface facing the substrate holder and provided with a plurality of essentially evenly distributed outlets for process gases to be introduced into the process chamber. In order to improve the observation of the surface temperature, the inventive device is provided with a plurality of sensors arranged to the rear of the outlets and respectively aligned with an associated outlet.
摘要翻译：本发明涉及一种用于在特别是晶体基底上沉积特别是结晶层的装置，所述装置包括一个处理室，该处理室设置在反应器壳体中并且包括用于容纳至少一个基板的基板支架。气体导纳体与衬底保持器相对地布置，所述主体包括面向衬底保持器的气体泄漏表面，并且设置有多个基本上均匀分布的用于工艺气体引入到处理室中的出口。为了改善对表面温度的观察，本发明的装置设置有多个传感器，其布置在出口的后部并分别与相关联的出口对准。

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