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1. 发明申请

US20120167825A1 HALOGEN ASSISTED PHYSICAL VAPOR TRANSPORT METHOD FOR SILICON CARBIDE GROWTH 审中-公开
标题翻译：卤素辅助物质蒸汽运输方法用于硅碳生长
公开(公告)号：US20120167825A1
公开(公告)日：2012-07-05
申请号：US13400783
申请日：2012-02-21
申请人： STEPHAN G. MUELLER , HUDSON M. HOBGOOD , VALERI F. TSVETKOV
发明人： STEPHAN G. MUELLER , HUDSON M. HOBGOOD , VALERI F. TSVETKOV
IPC分类号： C30B25/14 , C30B25/08
CPC分类号： C30B29/36 , C30B23/00 , C30B25/00 , Y10T117/10 , Y10T117/1008
摘要： A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated silicon-halogen gas composition into the system in an amount that is less than the stoichiometric amount of the silicon carbide source powder so that the silicon carbide source powder remains the stoichiometric dominant source for crystal growth, and heating the source powder, the gas composition, and the seed crystal in a manner that encourages physical vapor transport of both the powder species and the introduced silicon-halogen species to the seed crystal to promote bulk growth on the seed crystal.
摘要翻译：公开了一种用于碳化硅的物理蒸气传输增长技术。该方法包括以下步骤：将碳化硅粉末和碳化硅晶种引入物理蒸气迁移生长系统中，将加热的硅 - 卤素气体组合物分别以小于化学计量量的硅碳化硅源粉末使得碳化硅源粉末保持用于晶体生长的化学计量主要来源，并且以促进粉末物质和引入的硅的物理蒸汽输送的方式加热源粉末，气体组成和晶种 - 卤素物种到晶种以促进晶种上的体积生长。

2. 发明申请

US20110024766A1 ONE HUNDRED MILLIMETER SINGLE CRYSTAL SILICON CARBIDE WAFER 有权
标题翻译：一个百万像素单晶硅碳化硅波片
公开(公告)号：US20110024766A1
公开(公告)日：2011-02-03
申请号：US12772254
申请日：2010-05-03
申请人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
发明人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
IPC分类号： H01L29/24
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
摘要翻译：公开了一种用于通过减少碳化硅晶种和种子保持器之间的分离直到在晶种和种子保持器之间的导电传热主导辐射的方式在种子生长系统中生产高质量的碳化硅块状单晶的方法晶种和种子保持器之间的基本上在种子保持器附近的整个晶种表面上的热传递。

3. 发明授权

US07811943B2 Process for producing silicon carbide crystals having increased minority carrier lifetimes 有权
标题翻译：具有增加的少数载流子寿命的碳化硅晶体的生产方法
公开(公告)号：US07811943B2
公开(公告)日：2010-10-12
申请号：US11052679
申请日：2005-02-07
申请人： Calvin H. Carter, Jr. , Jason R. Jenny , David P. Malta , Hudson M. Hobgood , Valeri F. Tsvetkov , Mrinal K. Das
发明人： Calvin H. Carter, Jr. , Jason R. Jenny , David P. Malta , Hudson M. Hobgood , Valeri F. Tsvetkov , Mrinal K. Das
IPC分类号： H01L21/31
CPC分类号： C30B29/36 , C30B33/02
摘要： A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.
摘要翻译：描述了一种用于生产具有增加的少数载流子寿命的碳化硅晶体的方法。该方法包括以下步骤：加热并缓慢冷却具有第一浓度的少数载流子复合中心的碳化硅晶体，使得所得到的少数载流子复合中心的浓度低于第一浓度。

4. 发明授权

US09200381B2 Producing high quality bulk silicon carbide single crystal by managing thermal stresses at a seed interface 有权
标题翻译：通过管理种子界面的热应力来生产高质量的体积碳化硅单晶
公开(公告)号：US09200381B2
公开(公告)日：2015-12-01
申请号：US11249107
申请日：2005-10-12
申请人： Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
发明人： Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov
IPC分类号： C30B23/06 , C30B29/36 , C30B23/00 , C30B33/00 , H01L21/324
CPC分类号： C30B29/36 , C30B23/00 , C30B23/025 , C30B33/00 , H01L21/324 , Y10T117/10 , Y10T117/1004 , Y10T117/1016 , Y10T428/21 , Y10T428/31
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
摘要翻译：公开了一种用于通过减少碳化硅晶种和种子保持器之间的分离直到在晶种和种子保持器之间的导电传热主导辐射的方式在种子生长系统中生产高质量的碳化硅块状单晶的方法晶种和种子保持器之间的基本上在种子保持器附近的整个晶种表面上的热传递。

5. 发明授权

US08384090B2 Low 1C screw dislocation 3 inch silicon carbide wafer 有权
标题翻译：低1C螺丝错位3英寸碳化硅晶圆
公开(公告)号：US08384090B2
公开(公告)日：2013-02-26
申请号：US11940454
申请日：2007-11-15
申请人： Adrian Powell , Mark Brady , Stephan G. Mueller , Valeri F. Tsvetkov , Robert T. Leonard
发明人： Adrian Powell , Mark Brady , Stephan G. Mueller , Valeri F. Tsvetkov , Robert T. Leonard
IPC分类号： H01L29/24
CPC分类号： C30B23/00 , C30B29/36 , Y10T428/21
摘要： A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1c screw dislocation density of less than about 2000 cm−2.
摘要翻译：公开了具有至少约3英寸的直径和小于约2000cm-2的1c螺旋位错密度的SiC的高质量单晶晶片。

6. 发明申请

US20090056619A1 Halogen Assisted Physical Vapor Transport Method for Silicon Carbide Growth 有权
标题翻译：用于碳化硅生长的卤素辅助物理蒸气传输方法
公开(公告)号：US20090056619A1
公开(公告)日：2009-03-05
申请号：US11846574
申请日：2007-08-29
申请人： Stephan G. Mueller , Hudson M. Hobgood , Valeri F. Tsvetkov
发明人： Stephan G. Mueller , Hudson M. Hobgood , Valeri F. Tsvetkov
IPC分类号： C30B25/00
CPC分类号： C30B29/36 , C30B23/00 , C30B25/00 , Y10T117/10 , Y10T117/1008
摘要： A physical vapor transport growth technique for silicon carbide is disclosed. The method includes the steps of introducing a silicon carbide powder and a silicon carbide seed crystal into a physical vapor transport growth system, separately introducing a heated silicon-halogen gas composition into the system in an amount that is less than the stoichiometric amount of the silicon carbide source powder so that the silicon carbide source powder remains the stoichiometric dominant source for crystal growth, and heating the source powder, the gas composition, and the seed crystal in a manner that encourages physical vapor transport of both the powder species and the introduced silicon-halogen species to the seed crystal to promote bulk growth on the seed crystal.
摘要翻译：公开了一种用于碳化硅的物理蒸气传输增长技术。该方法包括以下步骤：将碳化硅粉末和碳化硅晶种引入物理蒸气迁移生长系统中，将加热的硅 - 卤素气体组合物分别以小于化学计量量的硅碳化硅源粉末使得碳化硅源粉末保持用于晶体生长的化学计量主要来源，并且以促进粉末物质和引入的硅的物理蒸汽输送的方式加热源粉末，气体组成和晶种 - 卤素物种到晶种以促进晶种上的体积生长。

7. 发明授权

US07316747B2 Seeded single crystal silicon carbide growth and resulting crystals 有权
标题翻译：种子单晶碳化硅生长并产生晶体
公开(公告)号：US07316747B2
公开(公告)日：2008-01-08
申请号：US11248579
申请日：2005-10-12
申请人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov , George J. Fechko, Jr. , Calvin H. Carter, Jr.
发明人： Jason Ronald Jenny , David Phillip Malta , Hudson McDonald Hobgood , Stephan Georg Mueller , Mark Brady , Robert Tyler Leonard , Adrian Powell , Valeri F. Tsvetkov , George J. Fechko, Jr. , Calvin H. Carter, Jr.
IPC分类号： C30B25/12
CPC分类号： C30B23/00 , C30B23/025 , C30B29/36 , C30B33/00 , H01L21/324
摘要： A method is disclosed for producing a high quality bulk single crystal of silicon carbide in a seeded growth system and in the absence of a solid silicon carbide source, by reducing the separation between a silicon carbide seed crystal and a seed holder until the conductive heat transfer between the seed crystal and the seed holder dominates the radiative heat transfer between the seed crystal and the seed holder over substantially the entire seed crystal surface that is adjacent the seed holder.
摘要翻译：公开了一种用于在种子生长系统中生产高质量大块碳化硅单晶并且在不存在固体碳化硅源的情况下，通过减少碳化硅晶种和种子保持器之间的分离直到导电传热晶种和种子保持器之间的种子晶种和种子保持器之间的辐射热传递在基本上与种子保持器相邻的整个晶种表面上。

8. 发明授权

US07314520B2 Low 1c screw dislocation 3 inch silicon carbide wafer 有权
标题翻译：低1c螺钉位错3寸碳化硅晶圆
公开(公告)号：US07314520B2
公开(公告)日：2008-01-01
申请号：US10957806
申请日：2004-10-04
申请人： Adrian Powell , Mark Brady , Stephen G. Mueller , Valeri F. Tsvetkov , Robert T. Leonard
发明人： Adrian Powell , Mark Brady , Stephen G. Mueller , Valeri F. Tsvetkov , Robert T. Leonard
IPC分类号： C30B25/12
CPC分类号： C30B23/00 , C30B29/36 , Y10T428/21
摘要： A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 3 inches and a 1 c screw dislocation density of less than about 2000 cm−2.
摘要翻译：公开了一种高质量的SiC晶圆，其直径至少为约3英寸，螺旋位错密度小于约2000cm -2。

9. 发明授权

US07294324B2 Low basal plane dislocation bulk grown SiC wafers 有权
标题翻译：低基面错位大块生长SiC晶圆
公开(公告)号：US07294324B2
公开(公告)日：2007-11-13
申请号：US11147645
申请日：2005-06-08
申请人： Adrian Powell , Mark Brady , Valeri F. Tsvetkov
发明人： Adrian Powell , Mark Brady , Valeri F. Tsvetkov
IPC分类号： C01B33/36
CPC分类号： C30B33/00 , C30B23/00 , C30B29/36 , H01L21/02378 , H01L21/0254 , H01L29/66068
摘要： A high quality single crystal wafer of SiC is disclosed. The wafer has a diameter of at least about 3 inches (75 mm) and at least one continuous square inch (6.25 cm2) of surface area that has a basal plane dislocation volume density of less than about 500 cm−2 for a 4 degree off-axis wafer.
摘要翻译：公开了一种高质量的SiC晶圆。该晶片具有至少约3英寸（75mm）的直径和至少一个具有小于约500的基面位错体积密度的表面积的连续平方英寸（6.25cm 2/2）用于4度离轴晶片的cm -2。

10. 发明授权

US07147715B2 Growth of ultra-high purity silicon carbide crystals in an ambient containing hydrogen 有权
标题翻译：在含有氢气的环境中生长超高纯碳化硅晶体
公开(公告)号：US07147715B2
公开(公告)日：2006-12-12
申请号：US10628189
申请日：2003-07-28
申请人： David Phillip Malta , Jason Ronald Jenny , Hudson McDonald Hobgood , Valeri F. Tsvetkov
发明人： David Phillip Malta , Jason Ronald Jenny , Hudson McDonald Hobgood , Valeri F. Tsvetkov
IPC分类号： C30B25/12 , C30B25/14
CPC分类号： C30B23/00 , C30B29/36
摘要： A method is disclosed for producing semi-insulating silicon carbide crystal with a controlled nitrogen content. The method includes the steps of introducing an ambient gas containing hydrogen into a sublimation growth chamber, heating a silicon carbide source powder to sublimation in the hydrogen ambient growth chamber while, heating and then maintaining a silicon carbide seed crystal in the hydrogen ambient growth chamber to a second temperature below the temperature of the source powder, at which second temperature sublimed species from the source powder will condense upon the seed crystal, continuing to heat the silicon carbide source powder until a desired amount of silicon carbide crystal growth has occurred upon the seed crystal, while maintaining an ambient concentration of hydrogen in the growth chamber sufficient to minimize the amount of nitrogen incorporated into the growing silicon carbide crystal, and while maintaining the source powder and the seed crystal during sublimation growth at respective temperatures high enough to increase the number of point defects in the growing crystal to an amount that renders the resulting silicon carbide crystal semi-insulating.
摘要翻译：公开了一种制备具有受控氮含量的半绝缘碳化硅晶体的方法。该方法包括以下步骤：将含有氢气的环境气体引入升华生长室，将碳化硅源粉末加热到氢气环境生长室中升华，同时加热然后将氢气环境生长室中的碳化硅晶种维持在低于源粉末的温度的第二温度，来自源粉末的第二温度升华物质将在晶种上冷凝，继续加热碳化硅源粉末，直到种子发生所需量的碳化硅晶体生长晶体，同时保持生长室中的氢气的环境浓度足以使结合到生长的碳化硅晶体中的氮的量最小化，并且在升华过程中保持源粉末和晶种在相应的温度下足够高以增加数量在生长晶体中的点缺陷达到使所得碳化硅晶体半绝缘的量。

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