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1. 发明申请

WO2010111515A2 FACTORY RESOURCE OPTIMIZATION IDENTIFICATION PROCESS AND SYSTEM 审中-公开
标题翻译：工厂资源优化识别流程与系统
公开(公告)号：WO2010111515A2
公开(公告)日：2010-09-30
申请号：PCT/US2010/028701
申请日：2010-03-25
申请人： APPLIED MATERIALS, INC. , NEUBER, Andreas , SETHIA, Parth , HAWKINS, Parris , VEPA, Krishna , MURRAY, Raymond
发明人： NEUBER, Andreas , SETHIA, Parth , HAWKINS, Parris , VEPA, Krishna , MURRAY, Raymond
IPC分类号： G06F19/00
CPC分类号： G06Q50/04 , G06Q10/06 , Y02P90/30
摘要： A method and system for factory resource optimization identification is described herein. In one embodiment, an expected usage rate is determined for a resource in a manufacturing facility and an actual usage rate is determined for the resource in the manufacturing facility. A comparison between the expected usage rate and the actual usage rate is facilitated. A determination is made, based on the comparison, of whether a variance between the expected usage rate and the actual usage rate exceeds a threshold. A notification is provided if the variance exceeds the threshold.
摘要翻译：本文描述了用于工厂资源优化识别的方法和系统。在一个实施例中，为制造设施中的资源确定预期使用率，并且确定制造设施中的资源的实际使用率。预期使用率与实际使用率之间的比较是有利的。基于比较来确定预期使用率和实际使用率之间的差异是否超过阈值。如果方差超过阈值，则提供通知。

2. 发明申请

WO2007056025A3 RECLAIMING SUBSTRATES HAVING DEFECTS AND CONTAMINANTS 审中-公开
标题翻译：回收有缺陷和污染物的基材
公开(公告)号：WO2007056025A3
公开(公告)日：2009-06-25
申请号：PCT/US2006042702
申请日：2006-10-31
申请人： APPLIED MATERIALS INC , VEPA KRISHNA , BHATNAGAR YASHAJ , RAYANDAYAN RONALD , WANG HONG
发明人： VEPA KRISHNA , BHATNAGAR YASHAJ , RAYANDAYAN RONALD , WANG HONG
IPC分类号： G06F19/00
CPC分类号： H01L21/67294 , H01L21/67288
摘要： A process (110), the test substrates to be reclaimed are identified by the system (100) and stored into cassettes (118), each of which is preferably assigned a unique identification code which may include alphanumeric or other symbols. Although the illustrated system is described in connection with silicon test substrates and cassettes, it is appreciated that certain embodiments may be directed to other types of test semiconductor and non-semiconductor substrates including silicon on insulator (SOI), gallium arsenide, germanium, silicon germanium, glass and other test substrates. Also, it is appreciated that storage containers or bins other than cassettes may be used. One example is a FOUP used to transport 300 mm substrates. A computer database (120) in which the system (100) stores the identification code of each test substrate to be reclaimed and the identification code of the particular cassette (118) in which each such test substrate is stored. The system (100) includes a controller comprising a suitable computer or computer network (124) which maintains the cassette database (120). A reader (126) reads the identification code from each test substrate (130) to be reclaimed, for storage in the database (120).
摘要翻译：一个过程（110），待回收的测试基板由系统（100）识别并存储到盒（118）中，其中每一个优选地被分配唯一的标识码，其可以包括字母数字或其他符号。虽然所示的系统是与硅测试基板和磁带盒相关的描述，但是可以理解，某些实施例可以针对其它类型的测试半导体和非半导体衬底，包括绝缘体上硅（SOI），砷化镓，锗，硅锗玻璃等测试基板。此外，应当理解，可以使用除盒之外的存储容器或箱。一个例子是用于运输300 mm基板的FOUP。一种计算机数据库（120），其中系统（100）存储要回收的每个测试基板的识别码以及存储每个这样的测试基板的特定盒（118）的识别码。系统（100）包括控制器，其包括维护盒式磁带数据库（120）的合适的计算机或计算机网络（124）。读取器（126）从每个测试基板（130）读取要回收的识别代码，用于存储在数据库（120）中。

3. 发明申请

WO2010111515A3 FACTORY RESOURCE OPTIMIZATION IDENTIFICATION PROCESS AND SYSTEM 审中-公开
标题翻译：工厂资源优化识别流程与系统
公开(公告)号：WO2010111515A3
公开(公告)日：2011-01-13
申请号：PCT/US2010028701
申请日：2010-03-25
申请人： APPLIED MATERIALS INC , NEUBER ANDREAS , SETHIA PARTH , HAWKINS PARRIS , VEPA KRISHNA , MURRAY RAYMOND
发明人： NEUBER ANDREAS , SETHIA PARTH , HAWKINS PARRIS , VEPA KRISHNA , MURRAY RAYMOND
IPC分类号： G06F19/00
CPC分类号： G06Q50/04 , G06Q10/06 , Y02P90/30
摘要： A method and system for factory resource optimization identification is described herein. In one embodiment, an expected usage rate is determined for a resource in a manufacturing facility and an actual usage rate is determined for the resource in the manufacturing facility. A comparison between the expected usage rate and the actual usage rate is facilitated. A determination is made, based on the comparison, of whether a variance between the expected usage rate and the actual usage rate exceeds a threshold. A notification is provided if the variance exceeds the threshold.
摘要翻译：本文描述了用于工厂资源优化识别的方法和系统。在一个实施例中，为制造设施中的资源确定预期使用率，并且确定制造设施中的资源的实际使用率。预期使用率与实际使用率之间的比较是有利的。基于比较来确定预期使用率和实际使用率之间的差异是否超过阈值。如果方差超过阈值，则提供通知。

4. 发明申请

WO2007056025A2 RECLAIMING SUBSTRATES HAVING DEFECTS AND CONTAMINANTS 审中-公开
标题翻译：回收有缺陷和污染物的基材
公开(公告)号：WO2007056025A2
公开(公告)日：2007-05-18
申请号：PCT/US2006/042702
申请日：2006-10-31
申请人： APPLIED MATERIALS, INC. , VEPA, Krishna , BHATNAGAR, Yashaj , RAYANDAYAN, Ronald , WANG, Hong
发明人： VEPA, Krishna , BHATNAGAR, Yashaj , RAYANDAYAN, Ronald , WANG, Hong
IPC分类号： H01L21/00 , G06F19/00
CPC分类号： H01L21/67294 , H01L21/67288
摘要： Test substrates used to test semiconductor fabrication tools are reclaimed by reading from a database the process steps performed on each test substrate and selecting a reclamation process from a plurality of reclamation processes. The reclamation process can include crystal lattice defect or metallic contaminant reduction treatments for reclaiming each test substrate. Each test substrate is sorted and placed into a group of test substrates having a common defect or contaminant reduction treatment assigned to the test substrates of the group. Additional features are described and claimed.
摘要翻译：用于测试半导体制造工具的测试衬底通过从数据库读取在每个测试衬底上执行的工艺步骤并从多个填充工艺中选择回收过程来回收。回收过程可以包括用于回收每个测试基底的晶格缺陷或金属污染物还原处理。将每个测试基底分选并放入一组具有分配给该组的测试底物的共同缺陷或污染物还原处理的测试基底。描述和要求保护附加的特征。

5. 发明授权

US5571373A Method of rough polishing semiconductor wafers to reduce surface roughness 失效
标题翻译：粗糙抛光半导体晶片以减少表面粗糙度的方法
公开(公告)号：US5571373A
公开(公告)日：1996-11-05
申请号：US245592
申请日：1994-05-18
申请人： Vepa Krishna , Michael S. Wisnieski , Lois Illig
发明人： Vepa Krishna , Michael S. Wisnieski , Lois Illig
IPC分类号： B24B37/00 , H01L21/304 , H01L21/306 , C03C25/06
CPC分类号： H01L21/30625
摘要： A method of rough polishing a semiconductor wafer to reduce roughness on a surface of the wafer prior to finish polishing the wafer by applying a polishing solution to a polishing material, contacting the polishing material and the polishing solution with the surface of the wafer as the wafer moves relative to the polishing material to reduce low frequency surface roughness of the wafer, applying a second polishing solution to the polishing material, and contacting the polishing material and the second polishing solution with the surface of the wafer as the wafer moves relative to the polishing material to further reduce the low frequency surface roughness, wherein the wafer has an average surface roughness not greater than 1.0 nm Ra, as measured on a 1 mm.times.1 mm scan with an optical interferometer, after being rough polished.
摘要翻译：一种粗抛光半导体晶片的方法，通过将抛光溶液应用于研磨材料，将研磨材料与抛光液与晶片的表面接触，作为晶片，在完成晶片抛光之前，减小晶片表面的粗糙度相对于抛光材料移动以降低晶片的低频表面粗糙度，向抛光材料施加第二抛光溶液，并且随着晶片相对于抛光而移动的抛光材料和第二抛光溶液与晶片的表面接触材料，以进一步降低低频表面粗糙度，其中在粗糙抛光之后，晶片具有不大于1.0nm Ra的平均表面粗糙度，在用光学干涉仪进行1mm×1mm扫描时测量。

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