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1. 发明申请

WO2004008514A1 PROCESS FOR FORMING A FRAGILE LAYER INSIDE OF A SINGLE CRYSTALLINE SUBSTRATE 审中-公开
标题翻译：在单晶衬底中形成易碎层的工艺
公开(公告)号：WO2004008514A1
公开(公告)日：2004-01-22
申请号：PCT/US2002/027847
申请日：2002-08-31
申请人： USENKO, Alexander
发明人： USENKO, Alexander
IPC分类号： H01L21/30
CPC分类号： H01L21/3003 , H01L21/26506 , H01L21/76254
摘要： Process for forming a fragile layer (102) inside of a single crystalline substrate (101) near one of the substrate surfaces. The fragile layer contains hydrogen mostly in the form of hydrogen platelets oriented in parallel to each other and to neighboring crystal surface. The fragile layer is preferably grown within a single crystalline silicon wafer to facilitate the detachment of an overlaying thin layer of single crystalline silicon from the initial wafer. The hydrogen layer is grown on a seed layer. The seed layer is preferably formed by ion implantation of inert gases at doses in the 10E+15 cm -2 range (202). The hydrogen layer is grown by plasma hydrogenation of the substrate (208). The hydrogenation process begins at a substrate temperature not exceeding 250 °C, and then continues at higher temperatures not exceeding 400 °C. The method can be used to fabricate silicon-on-insulator (SOI) wafers wherein a thin layer of single crystalline silicon is detached from a silicon substrate along the fragile layer and attached to a substrate with an insulator on top of that substrate.
摘要翻译：在单个基板（101）的一个基板表面附近形成脆性层（102）的工艺。易碎层包含大部分氢平板形式的氢，彼此平行取向并与相邻的晶体表面取向。脆性层优选在单晶硅晶片内生长，以便于从初始晶片分离单晶硅的覆盖薄层。氢层在种子层上生长。种子层优选通过以10E + 15cm -2 -2范围（202）的剂量离子注入惰性气体形成。通过基板（208）的等离子体氢化生长氢层。氢化过程在不超过250℃的衬底温度下开始，然后在不超过400℃的较高温度下继续。该方法可用于制造绝缘体上硅（SOI）晶片，其中单晶硅薄层沿着脆弱层从硅衬底分离，并且在该衬底的顶部上附着到具有绝缘体的衬底上。

2. 发明申请

WO2013181053A1 GALLIUM NITRIDE TO SILICON DIRECT WAFER BONDING 审中-公开
标题翻译：氮化硅至硅直接波形粘结
公开(公告)号：WO2013181053A1
公开(公告)日：2013-12-05
申请号：PCT/US2013/042380
申请日：2013-05-23
申请人： CORNING INCORPORATED , USENKO, Alexander
发明人： USENKO, Alexander
IPC分类号： H01L33/00 , H01L33/32 , H01L21/02
CPC分类号： H01L33/0079 , H01L21/02252 , H01L21/306 , H01L21/76254 , H01L29/267 , H01L33/007 , H01L33/02 , H01L51/56
摘要： A direct wafer bonding process for joining GaN and silicon substrates involves pre-treating each of the wafers in an ammonia plasma in order to render the respective contact surfaces ammophilic. The GaN substrate and the silicon substrate may each comprise single crystal wafers. The resulting hybrid semiconductor structure can be used to form high quality, low cost LEDs.
摘要翻译：用于接合GaN和硅衬底的直接晶片接合工艺涉及对氨等离子体中的每个晶片进行预处理，以使相应的接触表面具有亲水性。 GaN衬底和硅衬底可以各自包括单晶晶片。所得到的混合半导体结构可用于形成高质量，低成本的LED。

3. 发明申请

WO2014085608A1 METHODS FOR GLASS STRENGTHENING 审中-公开
标题翻译：玻璃加固方法
公开(公告)号：WO2014085608A1
公开(公告)日：2014-06-05
申请号：PCT/US2013/072265
申请日：2013-11-27
申请人： CORNING INCORPORATED , DEMARTINO, Steven Edward , ELMER, Thomas Helmut , USENKO, Alexander
发明人： DEMARTINO, Steven Edward , ELMER, Thomas Helmut , USENKO, Alexander
IPC分类号： C03C21/00 , C03C23/00
CPC分类号： C03C23/008 , C03C21/006 , C03C23/0095 , Y10T428/131 , Y10T428/315
摘要： Methods include providing a glass, wherein the glass is capable of being phase separated; phase separating the glass; leaching at least one surface of the glass to form a leached glass surface layer; and replenishing the leached glass surface layer with constituents to form a replenished glass surface layer, wherein the constituents cause swelling of the replenished glass surface layer.
摘要翻译：方法包括提供玻璃，其中玻璃能够相分离; 相分离玻璃; 浸出玻璃的至少一个表面以形成浸出的玻璃表面层; 并且用成分补充浸出的玻璃表面层以形成补充的玻璃表面层，其中所述成分引起补充的玻璃表面层的溶胀。

4. 发明申请

WO2004010481A1 METHOD OF MANUFACTURE OF A MULTI-LAYERED SUBSTRATE WITH A THIN SINGLE CRYSTALLINE LAYER 审中-公开
标题翻译：具有单层结晶层的多层基板的制造方法
公开(公告)号：WO2004010481A1
公开(公告)日：2004-01-29
申请号：PCT/US2002/033278
申请日：2002-10-18
申请人： CARR, William , USENKO, Alexander
发明人： CARR, William , USENKO, Alexander
IPC分类号： H01L21/00
CPC分类号： H01L21/67132 , B81C1/00357 , B81C1/00507 , B81C2201/019 , H01L21/3223 , H01L21/76254
摘要： A process for producing a multilayered substrate. In a first step, an adhesive layer is applied to a surface of a support substrate. Then a device substrate is placed into contact with the adhesive surface. Then the adhesive is cured. Then the device substrate is thinned. The device substrate has a hydrogen trap layer inside. The trap layer is formed by ion implantation through a face surface of the device substrate. The adhesive is chosen from compounds that release hydrogen upon curing. Thinning of the device substrate is performed by cleavage along a fragile layer of hydrogen microbubbles. The microbubble layer is formed through gettering of hydrogen released from the adhesive layer upon curing onto the trap layer and evolving the trapped hydrogen into the microbubbles. The substrates are preferably silicon single crystalline wafers and the adhesive is preferably hydrogen-silsesquioxane. The process is preferentially used to manufacture silicon-on-adhesive wafers for microelectromechanical systems, multilayer CMOS, and optoelectronic applications. The layered wafers have one or more thin single crystalline device layers and one or more sacrificial/space/spacer layer.
摘要翻译：一种多层基板的制造方法。在第一步骤中，将粘合剂层施加到支撑基板的表面上。然后将器件衬底放置成与粘合剂表面接触。然后粘合剂固化。然后将器件衬底减薄。器件基板内部具有氢阱层。陷阱层通过离子注入通过器件衬底的表面形成。粘合剂选自固化后释放氢的化合物。通过沿脆性层的氢气微泡进行切割来进行器件衬底的变薄。通过在固化到捕获层上时从吸附剂层中释放的氢气吸收而形成微泡层，并将捕获的氢气放出到微泡中。基底优选为硅单晶晶片，并且粘合剂优选为氢硅倍半氧烷。该方法优选用于制造用于微机电系统，多层CMOS和光电应用的粘合硅晶片。分层晶片具有一个或多个薄的单晶器件层和一个或多个牺牲/空间/间隔层。

5. 发明专利

AU2002329945A1 PROCESS FOR FORMING A FRAGILE LAYER INSIDE OF A SINGLE CRYSTALLINE SUBSTRATE 未知
公开(公告)号：AU2002329945A1
公开(公告)日：2004-02-02
申请号：AU2002329945
申请日：2002-08-31
申请人： USENKO ALEXANDER
发明人： USENKO ALEXANDER
IPC分类号： H01L21/265 , H01L21/30 , H01L21/762 , H01L21/46
摘要： Process for forming a fragile layer inside of a single crystalline substrate near one of the substrate surfaces. The fragile layer contains hydrogen mostly in form of hydrogen platelets oriented in parallel to each other and to neighboring crystal surface. The fragile layer is preferably grown within a single crystalline silicon wafer to facilitate the detachment of an overlaying thin layer of single crystalline silicon from the initial wafer. The hydrogen layer is grown on a seed layer. The seed layer is preferably formed by ion implantation of inert gases at doses in 10 15 cm -2 range. The hydrogen layer is grown by plasma hydrogenation of the substrate. The hydrogenation process begins at substrate temperature not exceeding 250° C., and than continues at higher temperature not exceeding 400° C. The method can be used to fabricate silicon-on-insulator (SOI) wafers wherein a thin layer of single crystalline silicon is detached from a silicon substrate along the fragile layer and attached to a substrate with an insulator on top of that substrate.

6. 发明专利

IN10143DEN2014A GALLIUM NITRIDE TO SILICON DIRECT WAFER BONDING 未知
公开(公告)号：IN10143DEN2014A
公开(公告)日：2015-08-21
申请号：IN10143DEN2014
申请日：2014-11-28
申请人： CORNING INC , USENKO ALEXANDER
发明人： USENKO ALEXANDER
IPC分类号： H01L33/00 , H01L21/02 , H01L33/32
摘要： A direct wafer bonding process for joining GaN and silicon substrates involves pre- treating each of the wafers in an ammonia plasma in order to render the respective contact surfaces ammophilic. The GaN substrate and the silicon substrate may each comprise single crystal wafers. The resulting hybrid semiconductor structure can be used to form high quality, low cost LEDs.

7. 发明专利

AU2002356823A1 METHOD OF MANUFACTURE OF A MULTI-LAYERED SUBSTRATE WITH A THIN SINGLE CRYSTALLINE LAYER 未知
公开(公告)号：AU2002356823A1
公开(公告)日：2004-02-09
申请号：AU2002356823
申请日：2002-10-18
申请人： CARR WILLIAM , USENKO ALEXANDER
发明人： CARR WILLIAM , USENKO ALEXANDER
IPC分类号： B81C1/00 , H01L21/00 , H01L21/322 , H01L21/762

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