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1. 发明专利

JP2000208458A SUBSTRATE CLEANING UNIT 失效
公开(公告)号：JP2000208458A
公开(公告)日：2000-07-28
申请号：JP706499
申请日：1999-01-13
申请人： ULTRA CLEAN TECHNOLOGY KAIHATS
发明人： YAMAGUCHI YOSHIAKI , NITTA TAKEHISA , MIKI MASAHIRO
IPC分类号： H01L21/304 , F04B9/00
摘要： PROBLEM TO BE SOLVED: To prevent impurities including organic impurities from entering when admitting clean room air into the cleaning chamber and to let the air be efficiently exhausted from the cleaning chamber even when the substrate is rotated at a high speed. SOLUTION: A substrate 102 to be cleaned is held horizontal. At the same time, a rotation-holding means 105, which enables the substrate to be rotated while being held, the cleaning solution supply means (the cleaning nozzles 103 and 104, which are provided above and below the substrate 102 to be cleaned), which sprays the cleaning solution on the substrate 102 to be cleaned, the high- frequency sound wave irradiation method 107, which irradiates one of the two cleaning nozzles with high-frequency sound wave are provided. As single-wafer cleaning units become smaller in size, low-efficiency exhaust during high-speed rotation of a substrate turned into a problem. These means are provided so as to solve the problem by increasing the exhaust efficiency.

2. 发明专利

JP2000173957A SEMICONDUCTOR WAFER POLISHING PAD, ITS RECLAIMING METHOD, AND POLISHING METHOD USING THE SAME 失效
公开(公告)号：JP2000173957A
公开(公告)日：2000-06-23
申请号：JP34624798
申请日：1998-12-04
申请人： OMI TADAHIRO , ULTRA CLEAN TECHNOLOGY KAIHATS
发明人： MORII AKIO , OMI TADAHIRO , NITTA TAKEHISA
IPC分类号： H01L21/304
摘要： PROBLEM TO BE SOLVED: To eliminate damages on a metal layer and a mixture of grindstone particles, reduce a wiring fail, further prolong the services life of a polishing pad, and further completely reclaim polishing capacity. SOLUTION: In this polishing pad 100, metal films laminated on a surface of a semiconductor wafer are used at a step of flattening while an abradant is supplied, and they are coated with a diamond thin film 101 on a substrate formed with recess and projection patterns. The abradant uncontaining grindstone particles is supplied, while the metal films formed on the semiconductor wafer are polished with a polishing pad coated with the diamond thin film on the substrate formed with the recess and projection patterns.

3. 发明专利

JP2000133597A DEVICE FOR MANUFACTURING SEMICONDUCTOR 失效
公开(公告)号：JP2000133597A
公开(公告)日：2000-05-12
申请号：JP30149298
申请日：1998-10-22
申请人： OMI TADAHIRO , ULTRA CLEAN TECHNOLOGY KAIHATS
发明人： OMI TADAHIRO , HIRAYAMA MASAKI , NITTA TAKEHISA
IPC分类号： H01L21/302 , H01L21/00 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device with a small device setting floor area and with superior maintenance performance for operating uniform processing on a substrate. SOLUTION: This device is constituted of a vacuum vessel 101, and plural base body placing stands are provided on the bottom plate of the vacuum vessel. In this case, a cylinder on which each O-ring is placed is connected via a bellows 106 with the bottom plate so that the base body placing stands can be surrounded, and when the cylinder is lifted up so that a clearance between the cylinder and the top plate of the vacuum container can be varied. One cylinder is provided with plural cylinder elevating mechanisms 109 for airtightly separating a space inside the cylinder constituting a processing chamber for processing the surface of a substrate from a space outside the cylinder constituting a carrying chamber for carrying the substrate by the O-ring at a position where the clearance can be minimized. Also, the carrying chamber is provided with a substrate-carrying mechanism for carrying the substrate between the processing chamber and the carrying chamber through the clearance, and the processing chamber is provided with a processing chamber gas inlet port and processing chamber gas exhaust port 116, and the carrying chamber is provided with a carrying chamber gas inlet port and carrying chamber gas exhaust port 119.

4. 发明专利

JP2000150512A SILICON NITRIDE FILM, FORMATION METHOD THEREFOR, AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000150512A
公开(公告)日：2000-05-30
申请号：JP13466099
申请日：1999-04-06
申请人： OMI TADAHIRO , ULTRA CLEAN TECHNOLOGY KAIHATS
发明人： OMI TADAHIRO , SEKINE KATSUYUKI , SAITO YUJI , HIRAYAMA MASAKI , NITTA TAKEHISA
IPC分类号： H01L21/318
摘要： PROBLEM TO BE SOLVED: To evenly and stably form a silicon nitride film with no electron or hole trap by introducing a mixed gas comprising nitrogen gas, inert gas, and hydrogen gas into a process chamber, causing plasma, and directly nitriding the surface of a silicon substrate to form Si-H bond and N-H bond. SOLUTION: A vacuum vessel 101 is vacuated using a turbo molecular pump 102, and the mixed gas of argon/nitrogen/hydrogen is introduced through a gas guiding port 103. With a silicon wafer 104 placed on a sample stage 105, a micro wave is supplied into the vacuum vessel 101 through a radial line slot antenna 107 from a coaxial waveguide 106, for generating a high-density plasma. Thus, the surface of silicon wafer 104 is directly nitrided so that a silicon nitride film comprising Si-H bond and N-H bond is formed. Thus, a silicon nitride film with no electron or hole trap is evenly and stably formed on the silicon wafer 104 by a few nm level.

5. 发明专利

JP2000138283A WAFER STOCKER HAVING WAFER REPLACING FUNCTION 失效
公开(公告)号：JP2000138283A
公开(公告)日：2000-05-16
申请号：JP28190799
申请日：1999-08-26
申请人： OMI TADAHIRO , ULTRA CLEAN TECHNOLOGY KAIHATS
发明人： OMI TADAHIRO , SHINOHARA HISAKUNI , NITTA TAKEHISA
IPC分类号： B65G1/00 , B65G49/07 , H01L21/673 , H01L21/677 , H01L21/68
摘要： PROBLEM TO BE SOLVED: To enhance operating rate of the entire line for any number of sheets of wafer to be manufactured and to enhance productivity, even in case of small quantity variety production by additionally providing a function for replacing a wafer between carries in an atmosphere, where contamination is controlled with respect to the wafer. SOLUTION: A spot which is carried by an overhead shuttle 100 is shifted to the side of an upper layer by means of the up/down mechanism of the overhead shuttle. It is received by a wafer container arm 101 which is movable along a stocker, and a wafer container 124 is moved above a sealing part 106. When the wafer container 124 is set at the sealing part 106 and fixed in the place, a sequence for breaking the low vacuum in the wafer container is actuated. When the inner pressures of a lower layer 122 and the wafer container 124 are equalized, the sealing part 106 is lowered integrally with a wafer carrier and a wafer 140 is stocked in a clean dry air atmosphere. Reverse procedure followed, when the carrier is contained in the wafer container.

6. 发明专利

JP2000201078A DATA COMPRESSION DEVICE AND METHOD, DATA DECOMPRESSION DEVICE AND METHOD, DATA COMPRESSION AND DECOMPRESSION SYSTEM AND METHOD, CODE BOOK PREPARING METHOD AND RECORDING MEDIUM 失效
公开(公告)号：JP2000201078A
公开(公告)日：2000-07-18
申请号：JP6708699
申请日：1999-03-12
申请人： OMI TADAHIRO , ULTRA CLEAN TECHNOLOGY KAIHATS
发明人： OMI TADAHIRO , KOTANI KOJI , NAKADA AKIRA , IMAI MAKOTO , YODA MASAHIRO , MORIMOTO TATSURO , YONEZAWA TAKEMI , NOZAWA TOSHIYUKI , NAKAYAMA TAKAHIRO , FUJIBAYASHI MASANORI , NITTA TAKEHISA
IPC分类号： H04N19/176 , H03M7/30 , H04N7/24 , H04N19/00 , H04N19/126 , H04N19/134 , H04N19/136 , H04N19/186 , H04N19/196 , H04N19/423 , H04N19/463 , H04N19/503 , H04N19/70 , H04N19/86 , H04N19/94
摘要： PROBLEM TO BE SOLVED: To realize the data compression of an image or a voice with a high compression rate, and to reproduce data whose quality is high based on the compressed data. SOLUTION: A correlation calculating part 36 is constituted so that vector quantization can be operated to each frame image of a moving image by using a code book for a spatial direction, and new vectors can be obtained by re- arraying obtained code columns by a spatial directional code re-array arithmetic part 39, and vector quantization can be operated to the new vectors by using a code book for a time axis, the vector quantization to the spatial direction can be operated to one frame image, and also the vector quantization to the time axial direction can be operated among plural frames along the time axis. Thus, inter-each frame data compression can be realized, and the moving image can be compressed with a high compression rate while the quality of the reproduced image can be maintained.

7. 发明专利

JP2000200780A MANUFACTURING EQUIPMENT OF SEMICONDUCTOR OR LIQUID CRYSTAL, AND METHOD FOR VAPORIZING LIQUID MATERIAL GAS 失效
公开(公告)号：JP2000200780A
公开(公告)日：2000-07-18
申请号：JP33799998
申请日：1998-11-27
申请人： OMI TADAHIRO , ULTRA CLEAN TECHNOLOGY KAIHATS
发明人： OMI TADAHIRO , NITTA TAKEHISA
IPC分类号： G01F1/68 , G02F1/13 , H01L21/205 , H01L21/31
摘要： PROBLEM TO BE SOLVED: To make it possible to constitute manufacturing equipment of a semiconductor or a liquid crystal with good repeatability and high uniformity at a high speed. SOLUTION: A control system for controlling pressure and a plurality of gas partial pressures is provided at an upstream of manufacturing equipment, in which a gas with a given excessive flow rate as compared with a set level can be fed for a desired time. The control system and an variable open-level fluid control valve or a variable discharge-rate vacuum system at a downstream position are interlocked so that a field forward type manufacturing step can be carried out with the inner pressure and the plurality of partial pressure kept constant in the equipment.

8. 发明专利

JP2000171284A LIQUID LEVEL INDICATOR AND GAS PRESSURE FEEDING TYPE CHEMICAL SUPPLY UNIT 失效
公开(公告)号：JP2000171284A
公开(公告)日：2000-06-23
申请号：JP34632898
申请日：1998-12-07
申请人： ULTRA CLEAN TECHNOLOGY KAIHATS , FUJIKIN KK
发明人： NITTA TAKEHISA , IKEDA SHINICHI , NISHINO KOJI , YASUMOTO TADASHI
IPC分类号： G01F23/26
摘要： PROBLEM TO BE SOLVED: To measure the liquid level of a corrosive chemical, e.g. hydrofluoric acid, without causing corrosion or elution of metallic component. SOLUTION: A chemical supply unit comprises an airtight container 3, a chemical container 4 contained therein, a tube 5 for feeding chemical in the chemical container 4 to the outside, and an liquid level indicator 2 for detecting liquid level variation of the chemical in the chemical container 4. The liquid level indicator 2 detects variation of capacitance between the electrodes 7 incident to variation of liquid level and the electrodes 7 are formed of amorphous carbon.

9. 发明专利

JP2000167318A GASKET FILTER 失效
公开(公告)号：JP2000167318A
公开(公告)日：2000-06-20
申请号：JP34089398
申请日：1998-12-01
申请人： ULTRA CLEAN TECHNOLOGY KAIHATS , FUJIKIN KK
发明人： OMI TADAHIRO , IDETA EIJI , IKEDA SHINICHI , MORIMOTO AKIHIRO , KOMEHANA KATSUNORI
IPC分类号： B01D29/01 , B01D35/02
摘要： PROBLEM TO BE SOLVED: To make water adherent to a filter removed easily and a surface treatment applied easily by installing a ring-shaped gasket main body and a filter fitted integrally to the gasket main body and forming the filter by boring numbers of holes in a disk-shaped metal body. SOLUTION: The gasket filter 41 is composed of a ring-shaped gasket main body 42 and a filter 43 installed integrally with the gasket main body 42. The filter 43 is formed by boring numbers of holes 45 by etching in a part excluding the peripheral part of a thin metal disk 44. A ring-shaped recessed place 46 coaxial with the gasket main body 42 is formed on one end surface of the gasket main body 42, and a filter housing recessed place 47 of a small diameter is formed on the bottom surface of the recessed place 46. Moreover, the recessed place 47 is formed to have a depth equal to the thickness of the filter 43 and a diameter equal to the outside diameter of the filter 43, and the filter 43 is inserted into the recessed place 47 and welded to the gasket main body 42.

10. 发明专利

JP2000228380A CLEANING METHOD 失效
公开(公告)号：JP2000228380A
公开(公告)日：2000-08-15
申请号：JP28587599
申请日：1999-08-31
申请人： OMI TADAHIRO , ULTRA CLEAN TECHNOLOGY KAIHATS
发明人： II TOSHIHIRO , MORI KENJI , ABE TOSHIKAZU , ARAKAWA HIROSHI , OMI TADAHIRO , NITTA TAKEHISA
IPC分类号： B08B3/08 , B08B3/12 , H01L21/304 , H01L21/306
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method, which is extremely superior in cleaning effects and does not give damages to a base body, and a rising method for promoting hydrogen termination of silicon atoms by a method, wherein the number of steps in a cleaning step is simplified, and a cleaner is simplified, and a reduction in a used amount of chemicals and pure water is realized. SOLUTION: This cleaning method comprises a first step of eliminating an organism and/or a metal impurity adhered to a matter to be cleaned with an aqueous solution containing ozone, a second step of giving vibrations of 500 kHz or higher to an aqueous solution containing hydrogen, while eliminating fine particles adhered to a base body, a third step of eliminating a metal impurity and/or a silicon oxide film with an aqueous solution containing hydrofluoric acid and hydrogen peroxide, and a fourth step of giving vibrations of 500 kHz or more to an aqueous solution containing a hydrogen gas, for the purpose of eliminating a chemical liquid of the first to third steps and/or eliminating fine particles, and preventing its re-adherence.

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