专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08860546B2 Magnetic device 有权
标题翻译：磁性装置
公开(公告)号：US08860546B2
公开(公告)日：2014-10-14
申请号：US13610546
申请日：2012-09-11
申请人： Tsung-Hsien Lee , Ying-Chian Kang , Hua-Sheng Shih , Chih-Tse Chen , Shao-Hsiung Chang , Chun-Liang Kuo , Chin-Chung Tai
发明人： Tsung-Hsien Lee , Ying-Chian Kang , Hua-Sheng Shih , Chih-Tse Chen , Shao-Hsiung Chang , Chun-Liang Kuo , Chin-Chung Tai
IPC分类号： H01F27/24 , H01F27/30 , H01F27/29
CPC分类号： H01F27/263 , H01F27/2828
摘要： A magnetic device including a first magnetic core is disclosed. The first magnetic core includes a base having a first edge; a first contacting structure disposed on the base; and a second contacting structure disposed on the base, wherein a distance between an inner surface of the first contacting structure and the first edge is larger than a distance between an inner surface of the second contacting structure and the first edge.
摘要翻译：公开了一种包括第一磁芯的磁性装置。第一磁芯包括具有第一边缘的基座; 设置在所述基座上的第一接触结构; 以及设置在所述基座上的第二接触结构，其中所述第一接触结构的内表面与所述第一边缘之间的距离大于所述第二接触结构的内表面与所述第一边缘之间的距离。

2. 发明授权

US07839249B2 Splitter 有权
标题翻译：分流器
公开(公告)号：US07839249B2
公开(公告)日：2010-11-23
申请号：US12191778
申请日：2008-08-14
申请人： Hung-Chieh Tseng , Ying-Chian Kang , Tsung-Hsien Lee , Shu-Hui Chen , Hua-Sheng Shih
发明人： Hung-Chieh Tseng , Ying-Chian Kang , Tsung-Hsien Lee , Shu-Hui Chen , Hua-Sheng Shih
IPC分类号： H01F27/02 , H01F21/06 , H01F27/30 , H01F17/04
CPC分类号： H01F17/043 , H01F3/12 , H01F5/02 , H01F27/266 , H01F2005/043
摘要： The present invention provides a splitter including a seat, a first inner core, a second inner core, a first coil, an outer core and a second coil. The seat has a bobbin, and the first coil is wound on the bobbin. The first inner core and the second inner core, disposed on the bobbin, are assembled with each other to cover the bobbin. The outer core and the first inner core are assembled with each other. The second coil is disposed between the outer core and the first inner core.
摘要翻译：本发明提供了一种分离器，包括座，第一内芯，第二内芯，第一线圈，外芯和第二线圈。座椅具有线轴，第一线圈缠绕在线轴上。设置在线轴上的第一内芯和第二内芯彼此组装以覆盖线轴。外芯和第一内芯彼此组装。第二线圈设置在外芯和第一内芯之间。

3. 发明申请

US20130229254A1 MAGNETIC DEVICE 有权
标题翻译：磁性装置
公开(公告)号：US20130229254A1
公开(公告)日：2013-09-05
申请号：US13610546
申请日：2012-09-11
申请人： Tsung-Hsien Lee , Ying-Chian Kang , Hua-Sheng Shih , Chih-Tse Chen , Shao-Hsiung Chang , Chun-Liang Kuo , Chin-Chung Tai
发明人： Tsung-Hsien Lee , Ying-Chian Kang , Hua-Sheng Shih , Chih-Tse Chen , Shao-Hsiung Chang , Chun-Liang Kuo , Chin-Chung Tai
IPC分类号： H01F27/28 , H01F27/24
CPC分类号： H01F27/263 , H01F27/2828
摘要： A magnetic device including a first magnetic core is disclosed. The first magnetic core includes a base having a first edge; a first contacting structure disposed on the base; and a second contacting structure disposed on the base, wherein a distance between an inner surface of the first contacting structure and the first edge is larger than a distance between an inner surface of the second contacting structure and the first edge.
摘要翻译：公开了一种包括第一磁芯的磁性装置。第一磁芯包括具有第一边缘的基座; 设置在所述基座上的第一接触结构; 以及设置在所述基座上的第二接触结构，其中所述第一接触结构的内表面与所述第一边缘之间的距离大于所述第二接触结构的内表面与所述第一边缘之间的距离。

4. 发明申请

US20120124272A1 FLASH MEMORY APPARATUS 审中-公开
标题翻译：闪存设备
公开(公告)号：US20120124272A1
公开(公告)日：2012-05-17
申请号：US12944737
申请日：2010-11-12
申请人： Ching-Hua Hsiao , Jean-Yi Lee , Tsung-Hsien Lee , Sheng-An Yang
发明人： Ching-Hua Hsiao , Jean-Yi Lee , Tsung-Hsien Lee , Sheng-An Yang
IPC分类号： G06F12/02
CPC分类号： G11C16/10 , G11C16/26
摘要： A flash memory apparatus including a command analysis unit, a first flash memory and a second flash memory is provided. The command analysis unit with a plurality of command buffers receives a plurality of command elements and queues the command elements in the command buffers in sequence. The command analysis unit transmits the command elements simultaneously to the first flash memory and the second flash memory through a command bus, and the flash memory device writes/reads the first flash memory and the second flash memory simultaneously through a first data bus and a second data bus different from the first data bus respectively to execute an operation. The flash memory device queues the command elements so as to enhance the command throughput, and the flash memories share the same command bus for dual channel operation.
摘要翻译：提供一种包括命令分析单元，第一闪存和第二闪存的闪速存储设备。具有多个命令缓冲器的命令分析单元接收多个命令元素，并且顺序地将命令缓冲器中的命令元素排队。命令分析单元通过命令总线将命令元件同时发送到第一闪速存储器和第二闪速存储器，并且闪速存储器件通过第一数据总线和第二数据总线同时写入/读取第一闪存和第二闪存数据总线分别与第一数据总线不同，以执行操作。闪存器件对命令元素进行排队，以增强命令吞吐量，并且闪存共享相同的命令总线用于双通道操作。

5. 发明申请

US20090267719A1 SPLITTER 有权
标题翻译：分机
公开(公告)号：US20090267719A1
公开(公告)日：2009-10-29
申请号：US12191778
申请日：2008-08-14
申请人： Hung-Chieh Tseng , Ying-Chian Kang , Tsung-Hsien Lee , Shu-Hui Chen , Hua-Sheng Shih
发明人： Hung-Chieh Tseng , Ying-Chian Kang , Tsung-Hsien Lee , Shu-Hui Chen , Hua-Sheng Shih
IPC分类号： H01F27/02
CPC分类号： H01F17/043 , H01F3/12 , H01F5/02 , H01F27/266 , H01F2005/043
摘要： The present invention provides a splitter including a seat, a first inner core, a second inner core, a first coil, an outer core and a second coil. The seat has a bobbin, and the first coil is wound on the bobbin. The first inner core and the second inner core, disposed on the bobbin, are assembled with each other to cover the bobbin. The outer core and the first inner core are assembled with each other. The second coil is disposed between the outer core and the first inner core.
摘要翻译：本发明提供了一种分离器，包括座，第一内芯，第二内芯，第一线圈，外芯和第二线圈。座椅具有线轴，第一线圈缠绕在线轴上。设置在线轴上的第一内芯和第二内芯彼此组装以覆盖线轴。外芯和第一内芯彼此组装。第二线圈设置在外芯和第一内芯之间。

6. 发明申请

US20060205232A1 Film treatment method preventing blocked etch of low-K dielectrics 审中-公开
标题翻译：防止低K电介质的阻挡蚀刻的膜处理方法
公开(公告)号：US20060205232A1
公开(公告)日：2006-09-14
申请号：US11076702
申请日：2005-03-10
申请人： Lih-Ping Li , Tzong-Sheng Chang , William Kuo , Tsung-Hsien Lee , Chun-Lin Tsai , Szu-An Wu , Yin-Ping Lee
发明人： Lih-Ping Li , Tzong-Sheng Chang , William Kuo , Tsung-Hsien Lee , Chun-Lin Tsai , Szu-An Wu , Yin-Ping Lee
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/0276 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/76802 , H01L21/76825 , H01L21/76826 , H01L21/76828
摘要： A method for etching a dielectric material in a semiconductor device is disclosed. After providing a conductive region, a dielectric layer is formed over the conductive region. A dielectric antireflective coating (DARC) layer is further formed on the dielectric layer. Then, a moisture-removal step is performed that removes moisture from the DARC layer and from an interface region between the dielectric and the DARC layer. A masking pattern is transferred into the DARC layer and the dielectric layer.
摘要翻译：公开了一种在半导体器件中蚀刻介电材料的方法。在提供导电区域之后，在导电区域上形成电介质层。在电介质层上进一步形成电介质抗反射涂层（DARC）层。然后，进行除湿步骤，其从DARC层和电介质层与DARC层之间的界面区域去除水分。掩模图案被传送到DARC层和电介质层。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式