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1. 发明申请

US20120147916A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20120147916A1
公开(公告)日：2012-06-14
申请号：US13323785
申请日：2011-12-12
申请人： Tsuguki Noma , Minoru Akutsu , Yoshito Nishioka
发明人： Tsuguki Noma , Minoru Akutsu , Yoshito Nishioka
IPC分类号： H01S5/343
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/2031 , H01S5/22 , H01S5/3202 , H01S5/3213 , H01S5/3404 , H01S5/3436 , H01S2301/145 , H01S2301/173
摘要： A semiconductor laser device capable of high output is provided. A semiconductor laser diode includes: a substrate; and a semiconductor stacked structure, which is formed on the substrate through crystal growth. The semiconductor stacked structure includes: an n-type (Alx1Ga(1-x1))0.51In0.49P cladding layer 14 and a p-type (Alx1Ga(1-x1))0.51In0.49P cladding layer; an n-side Alx2Ga(1-x2)As guiding layer and a p-side Alx2Ga(1-x2)As guiding layer, which are sandwiched between the cladding layers; and an active layer, which is sandwiched between the guiding layers. The active layer is formed of a quantum well layer including an AlyGa(1-y)As(1-x3)Px3 layer and a barrier layer including an Alx4Ga(1-x4)As layer that are alternatively repetitively stacked for a plurality of periods.
摘要翻译：提供能够高输出的半导体激光装置。半导体激光二极管包括：基板; 以及通过晶体生长形成在基板上的半导体层叠结构。半导体堆叠结构包括：n型（Al x Ga 1-x 1）0.51In0.49P包层14和p型（Al x Ga 1-x 1）0.51 In 0.49P包层; 夹在包层之间的n侧Alx2Ga（1-x2）As导向层和p侧Alx2Ga（1-x2）As导向层; 以及夹在引导层之间的有源层。活性层由包括Al y Ga（1-y）As（1-x 3）P x 3层和包含Al x 4 Ga（1-x 4）As层）的势垒层的量子阱层形成，该层的重叠堆叠多个周期。

2. 发明申请

US20110128985A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20110128985A1
公开(公告)日：2011-06-02
申请号：US12734665
申请日：2008-10-17
申请人： Tsuguki Noma , Miroru Murayama , Satoshi Uchida , Tsutomu Ishikawa
发明人： Tsuguki Noma , Miroru Murayama , Satoshi Uchida , Tsutomu Ishikawa
IPC分类号： H01S5/026
CPC分类号： H01S5/223 , H01S5/221 , H01S5/2219 , H01S5/2227 , H01S5/2231 , H01S5/34326
摘要： Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate (10); an n-type clad layer (12) arranged on the substrate (10); an active layer (13) arranged on the n-type clad layer (12); a p-type clad layer (14), which is arranged on the active layer (13) and composed of a compound containing Al and has a stripe-shaped ridge structure to be a current channel; a current block layer (16), which is arranged on the surface of the p-clad layer (14) excluding an upper surface of the ridge structure and composed of a compound containing Al and has an Al composition ratio not more than that of the p-type clad layer (14); and a light absorption layer (17), which is arranged on the current block layer (16) and absorbs light at the laser oscillation wavelength.
摘要翻译：提供了即使对于高温输出也具有低工作电流并稳定地振荡的半导体激光器。半导体激光器设置有基板（10）; 布置在所述基板（10）上的n型覆盖层（12）; 布置在所述n型覆层（12）上的有源层（13）; p型覆盖层（14），其配置在有源层（13）上，由含有Al的化合物构成，具有条状的脊状结构成为电流通道; 布置在p包覆层（14）的表面上的电流阻挡层（16），除了脊结构的上表面，并且由含Al的化合物构成，Al组成比不大于 p型覆层（14）; 以及布置在当前阻挡层（16）上并吸收激光振荡波长的光的光吸收层（17）。

3. 发明申请

US20090168824A1 Semiconductor Laser Light Emitting Device and Method for Manufacturing Same 有权
标题翻译：半导体激光发光装置及其制造方法
公开(公告)号：US20090168824A1
公开(公告)日：2009-07-02
申请号：US12083913
申请日：2006-10-16
申请人： Tsuguki Noma
发明人： Tsuguki Noma
IPC分类号： H01S5/00 , H01L21/00
CPC分类号： H01S5/4025 , H01S5/4087
摘要： A semiconductor laser device 1 includes infrared and red laser elements 3, 4 provided on a substrate 2, where the infrared element 3 includes a laminate of a first lower clad layer 11, a first active layer 12 and a first upper clad layer 13, and the red element 4 includes a laminate of a second lower clad layer 21, a second active layer 22 and a second upper clad layer 23. The clad layer 11 includes a third lower clad layer 17 formed on the substrate 2, an etching stop layer 18 formed on the third lower clad layer 17, and a fourth lower clad layer 19 formed on the etching stop layer 18 at a region provided with the infrared element 3. The second lower clad layer 21 is formed on the etching stop layer 18 except at the region of the infrared element 3.
摘要翻译：半导体激光装置1包括设置在基板2上的红外线和红色激光元件3,4，其中红外线元件3包括第一下部包层11，第一有源层12和第一上部包层13的层叠体，以及红色元件4包括第二下部包层21，第二有源层22和第二上部包层23的层叠体。包层11包括形成在基板2上的第三下部包层17，蚀刻停止层18 形成在第三下部包层17上的第四下部包覆层19以及在设置有红外线元件3的区域上形成在蚀刻停止层18上的第四下部包覆层19.第二下部包层21形成在蚀刻停止层18上，红外元件3的区域。

4. 发明授权

US09099841B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US09099841B2
公开(公告)日：2015-08-04
申请号：US12734665
申请日：2008-10-17
申请人： Tsuguki Noma , Miroru Murayama , Satoshi Uchida , Tsutomu Ishikawa
发明人： Tsuguki Noma , Miroru Murayama , Satoshi Uchida , Tsutomu Ishikawa
IPC分类号： H01S5/00 , H01S5/223 , H01S5/22
CPC分类号： H01S5/223 , H01S5/221 , H01S5/2219 , H01S5/2227 , H01S5/2231 , H01S5/34326
摘要： Provided is a semiconductor laser which has a low operating current and stably oscillates even for high-temperature output. The semiconductor laser is provided with a substrate (10); an n-type clad layer (12) arranged on the substrate (10); an active layer (13) arranged on the n-type clad layer (12); a p-type clad layer (14), which is arranged on the active layer (13) and composed of a compound containing Al and has a stripe-shaped ridge structure to be a current channel; a current block layer (16), which is arranged on the surface of the p-clad layer (14) excluding an upper surface of the ridge structure and composed of a compound containing Al and has an Al composition ratio not more than that of the p-type clad layer (14); and a light absorption layer (17), which is arranged on the current block layer (16) and absorbs light at the laser oscillation wavelength.
摘要翻译：提供了即使对于高温输出也具有低工作电流并稳定地振荡的半导体激光器。半导体激光器设置有基板（10）; 布置在所述基板（10）上的n型覆盖层（12）; 布置在所述n型覆层（12）上的有源层（13）; p型覆盖层（14），其配置在有源层（13）上，由含有Al的化合物构成，具有条状的脊状结构成为电流通道; 布置在p包覆层（14）的表面上的电流阻挡层（16），除了脊结构的上表面，并且由含Al的化合物构成，Al组成比不大于 p型覆层（14）; 以及布置在当前阻挡层（16）上并吸收激光振荡波长的光的光吸收层（17）。

5. 发明授权

US07860138B2 Semiconductor laser light emitting device and method for manufacturing same 有权
标题翻译：半导体激光发光器件及其制造方法
公开(公告)号：US07860138B2
公开(公告)日：2010-12-28
申请号：US12083913
申请日：2006-10-16
申请人： Tsuguki Noma
发明人： Tsuguki Noma
IPC分类号： H01S5/00
CPC分类号： H01S5/4025 , H01S5/4087
摘要： A semiconductor laser device 1 includes infrared and red laser elements 3, 4 provided on a substrate 2, where the infrared element 3 includes a laminate of a first lower clad layer 11, a first active layer 12 and a first upper clad layer 13, and the red element 4 includes a laminate of a second lower clad layer 21, a second active layer 22 and a second upper clad layer 23. The clad layer 11 includes a third lower clad layer 17 formed on the substrate 2, an etching stop layer 18 formed on the third lower clad layer 17, and a fourth lower clad layer 19 formed on the etching stop layer 18 at a region provided with the infrared element 3. The second lower clad layer 21 is formed on the etching stop layer 18 except at the region of the infrared element 3.
摘要翻译：半导体激光装置1包括设置在基板2上的红外线和红色激光元件3,4，其中红外线元件3包括第一下部包层11，第一有源层12和第一上部包层13的层叠体，以及红色元件4包括第二下部包层21，第二有源层22和第二上部包层23的层叠体。包层11包括形成在基板2上的第三下部包层17，蚀刻停止层18 形成在第三下部包层17上的第四下部包覆层19以及在设置有红外线元件3的区域上形成在蚀刻停止层18上的第四下部包覆层19.第二下部包层21形成在蚀刻停止层18上，除了红外元件3的区域。

6. 发明授权

US08179747B1 Thermally assisted magnetic head 有权
标题翻译：热辅助磁头
公开(公告)号：US08179747B1
公开(公告)日：2012-05-15
申请号：US13036590
申请日：2011-02-28
申请人： Yoichi Mugino , Tsuguki Noma , Minoru Akutsu , Koji Shimazawa
发明人： Yoichi Mugino , Tsuguki Noma , Minoru Akutsu , Koji Shimazawa
IPC分类号： G11B11/00
CPC分类号： G11B5/6088 , G11B5/314 , G11B2005/0021
摘要： A thermally assisted magnetic head includes a slider and a light source unit. The light source unit includes a semiconductor laser diode. The semiconductor laser diode includes an n-type (Alx1Ga(1-x1))0.51In0.49P cladding layer, a p-type (Alx1Ga(1-x1))0.51In0.49P cladding layer, an n-side Alx2Ga(1-x2)As guide layer placed between these cladding layers, a p-side Alx2Ga(1-x2)As guide layer placed between these cladding layers, and an active layer placed between these guide layers.
摘要翻译：热辅助磁头包括滑块和光源单元。光源单元包括半导体激光二极管。半导体激光二极管包括n型（Alx1Ga（1-x1））0.51In0.49P包层，p型（Alx1Ga（1-x1））0.51In0.49P包层，n侧Alx2Ga（1 -x2）作为位于这些包覆层之间的引导层，配置在这些覆盖层之间的p侧Al x Al 2 Ga（1-x 2）As引导层和位于这些引导层之间的有源层。

7. 发明申请

US20110064104A1 SEMICONDUCTOR LASER LIGHT EMITTING DEVIDE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体激光发光器件及其制造方法
公开(公告)号：US20110064104A1
公开(公告)日：2011-03-17
申请号：US12949327
申请日：2010-11-18
申请人： Tsuguki NOMA
发明人： Tsuguki NOMA
IPC分类号： H01S5/30 , H01S5/323
CPC分类号： H01S5/4025 , H01S5/4087
摘要： A semiconductor laser device 1 includes infrared and red laser elements 3, 4 provided on a substrate 2, where the infrared element 3 includes a laminate of a first lower clad layer 11, a first active layer 12 and a first upper clad layer 13, and the red element 4 includes a laminate of a second lower clad layer 21, a second active layer 22 and a second upper clad layer 23. The clad layer 11 includes a third lower clad layer 17 formed on the substrate 2, an etching stop layer 18 formed on the third lower clad layer 17, and a fourth lower clad layer 19 formed on the etching stop layer 18 at a region provided with the infrared element 3. The second lower clad layer 21 is formed on the etching stop layer 18 except at the region of the infrared element 3.
摘要翻译：半导体激光装置1包括设置在基板2上的红外线和红色激光元件3,4，其中红外线元件3包括第一下部包层11，第一有源层12和第一上部包层13的层叠体，以及红色元件4包括第二下部包层21，第二有源层22和第二上部包层23的层叠体。包层11包括形成在基板2上的第三下部包层17，蚀刻停止层18 形成在第三下部包层17上的第四下部包覆层19以及在设置有红外线元件3的区域上形成在蚀刻停止层18上的第四下部包覆层19.第二下部包层21形成在蚀刻停止层18上，红外元件3的区域。

8. 发明授权

US08957692B2 Method for performing burn-in test 有权
标题翻译：执行老化测试的方法
公开(公告)号：US08957692B2
公开(公告)日：2015-02-17
申请号：US12958692
申请日：2010-12-02
申请人： Koji Shimazawa , Masaaki Kaneko , Takashi Honda , Yoichi Mugino , Yoshito Nishioka , Tsuguki Noma
发明人： Koji Shimazawa , Masaaki Kaneko , Takashi Honda , Yoichi Mugino , Yoshito Nishioka , Tsuguki Noma
IPC分类号： G01R31/00 , G11B5/455 , H01S5/00 , G11B5/105 , G11B5/31 , G01R31/26 , G11B5/00
CPC分类号： G11B5/455 , G01R31/2635 , G01R31/2642 , G11B5/105 , G11B5/3166 , G11B5/3173 , G11B2005/0021 , H01S5/0021 , H01S5/0042
摘要： Provided is a method for performing a burn-in test on an object under test in which a plurality of electrodes are provided in positions at different heights. The method comprising steps of: preparing an object under test in which an electrode in a higher position have a higher surface roughness among the plurality of electrodes; bringing a plurality of sheet-type probes into contact with the plurality of electrodes, respectively; and supplying an electric current with the plurality of electrodes through the plurality of sheet-type probes. By implementing the method, the sheet-type probes can be kept in stable contact with the electrodes because electrodes in a higher position have a higher surface roughness Ra than electrodes in a lower position. Consequently, stable and reliable burn-in test can be performed.
摘要翻译：提供了一种用于对被测物体进行老化测试的方法，其中多个电极设置在不同高度的位置。该方法包括以下步骤：制备被测物体，其中较高位置的电极在多个电极中具有较高的表面粗糙度; 使多个片式探针分别与多个电极接触; 并且通过所述多个片式探针向所述多个电极提供电流。通过实施该方法，片状探针可以保持与电极的稳定接触，因为较高位置的电极具有比较低位置的电极更高的表面粗糙度Ra。因此，可以进行稳定可靠的老化测试。

9. 发明授权

US08699536B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US08699536B2
公开(公告)日：2014-04-15
申请号：US13323785
申请日：2011-12-12
申请人： Tsuguki Noma , Minoru Akutsu , Yoshito Nishioka
发明人： Tsuguki Noma , Minoru Akutsu , Yoshito Nishioka
IPC分类号： H01S5/00
CPC分类号： H01S5/3434 , B82Y20/00 , H01S5/2031 , H01S5/22 , H01S5/3202 , H01S5/3213 , H01S5/3404 , H01S5/3436 , H01S2301/145 , H01S2301/173
摘要： A semiconductor laser device capable of high output is provided. A semiconductor laser diode includes: a substrate; and a semiconductor stacked structure, which is formed on the substrate through crystal growth. The semiconductor stacked structure includes: an n-type (Alx1Ga(1-x1))0.51In0.49P cladding layer and a p-type (Alx1Ga(1-x1))0.51In0.49P cladding layer; an n-side Alx2Ga(1-x2)As guiding layer and a p-side Alx2Ga(1-x2)As guiding layer, which are sandwiched between the cladding layers; and an active layer, which is sandwiched between the guiding layers. The active layer is formed of a quantum well layer including an AlyGa(1-y)As(1-x3)Px3 layer and a barrier layer including an Alx4Ga(1-x4)As layer that are alternatively repetitively stacked for a plurality of periods.
摘要翻译：提供能够高输出的半导体激光装置。半导体激光二极管包括：基板; 以及通过晶体生长形成在基板上的半导体层叠结构。半导体堆叠结构包括：n型（Al x Ga 1-x 1）0.51In0.49P包层和p型（Al x Ga 1-x 1）0.51 In 0.49P包层; 夹在包层之间的n侧Alx2Ga（1-x2）As导向层和p侧Alx2Ga（1-x2）As导向层; 以及夹在引导层之间的有源层。活性层由包括Al y Ga（1-y）As（1-x 3）P x 3层和包含Al x 4 Ga（1-x 4）As层）的势垒层的量子阱层形成，该层的重叠堆叠多个周期。

10. 发明授权

US08599895B2 Semiconductor laser device and manufacturing method thereof 有权
公开(公告)号：US08599895B2
公开(公告)日：2013-12-03
申请号：US13559670
申请日：2012-07-27
申请人： Yoshita Nishioka , Yoichi Mugino , Tsuguki Noma
发明人： Yoshita Nishioka , Yoichi Mugino , Tsuguki Noma
IPC分类号： H01S5/00
CPC分类号： H01S5/3404 , B82Y20/00 , G11B2005/0021 , H01S5/16 , H01S5/162 , H01S5/22 , H01S5/3202 , H01S5/3213 , H01S5/34313 , H01S2301/145 , H01S2301/173
摘要： A semiconductor laser device includes a p-type clad layer and an n-type clad layer, a p-side guide layer and an n-side guide layer interposed between the p-type clad layer and the n-type clad layer, and an active layer interposed between the p-side guide layer and the n-side guide layer. The active layer includes at least two quantum well layers and a barrier layer interposed between the quantum well layers adjoining to each other. Each of the p-type clad layer and the n-type clad layer is formed of a (Alx1Ga(1-x1))0.51In0.49P layer (0≦x1≦1). Each of the p-side guide layer, the n-side guide layer and the barrier layer is formed of a Alx2Ga(1-x2)As layer (0≦x2≦1). Each of the quantum well layers is formed of a GaAs(1-x3)Px3 layer (0≦x3≦1). The (Alx1Ga(1-x1))0.51In0.49P layer has a composition satisfying an inequality, x1>0.7. The Alx2Ga(1-x2)As layer has a composition satisfying an inequality, 0.4≦x2≦0.8.

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