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1. 发明申请

WO2016113707A1 A DEVICE INTRINSICALLY DESIGNED TO RESONATE, SUITABLE FOR RF POWER TRANSFER AS WELL AS GROUP INCLUDING SUCH DEVICE AND USABLE FOR THE PRODUCTION OF PLASMA 审中-公开
标题翻译：专用于专门设计用于RF功率传输的设备，包括这样的设备，并且可用于生产等离子体
公开(公告)号：WO2016113707A1
公开(公告)日：2016-07-21
申请号：PCT/IB2016/050199
申请日：2016-01-15
申请人： SELMO, Antonio Franco , PAVARIN, Daniele , TREZZOLANI, Fabio , MANENTE, Marco
发明人： SELMO, Antonio Franco
IPC分类号： H01J37/32
CPC分类号： H01J37/3211 , H01J37/32174 , H01J37/32183
摘要： The present invention regards a device intrinsically designed to resonate (2), suitable for RF power transfer, particularly usable for the production of plasma and electrically connectable downstream of a radio frequency power supply (3) with fixed or variable frequency, comprising at least one inductive element (Lp), which can be powered, during use, by such at least one power supply (3); at least one capacitive element (Cp) electrically connected at the terminals of such at least one inductive element (Lp); such at least one device (2) having a resonance angular frequency equal to: ωο = 1/ √ LpCp The capacitive element (Cp) and the inductive element (Lp) have values such that, at resonance state, they provide an equivalent impedance, measured at the terminals of such device (2), substantially of resistive type and much greater than the value of the parasitic impedance upstream of such terminals of such device (2), such that the effect of such parasitic impedance is, during use, substantially negligible.
摘要翻译：本发明涉及一种固有地设计为谐振（2）适于射频功率传输的装置，特别是可用于制造具有固定频率或可变频率的射频电源（3）的等离子体和可电连接的下游，该装置包括至少一个电感元件（Lp），其在使用期间由所述至少一个电源（3）供电; 在所述至少一个感应元件（Lp）的端子处电连接的至少一个电容元件（Cp）; 这样的至少一个具有等于ωo= 1 / LpCp的谐振角频率的装置（2）。电容元件（Cp）和电感元件（Lp）具有这样的值，使得在共振状态下，它们提供等效阻抗，在这种装置（2）的端子处测量，基本上是电阻型并且远大于这种装置（2）的这种端子上游的寄生阻抗的值，使得这种寄生阻抗的作用在使用期间基本上微不足道。

2. 发明专利

ES2849151T3 Un dispositivo intrínsecamente diseñado para resonar, adecuado para la transferencia de potencia RF así como un grupo que incluye dicho dispositivo y utilizable para la producción de plasma 未知
公开(公告)号：ES2849151T3
公开(公告)日：2021-08-16
申请号：ES16709117
申请日：2016-01-15
申请人： SELMO ANTONIO FRANCO , PAVARIN DANIELE , TREZZOLANI FABIO , MANENTE MARCO
发明人： SELMO ANTONIO FRANCO
IPC分类号： H01J37/32
摘要： Dispositivo (2) diseñado intrínsecamente para resonar, adecuado para la transferencia de potencia de RF, especialmente utilizable para la producción de plasma, y conectable eléctricamente después de una fuente (3) de alimentación de radiofrecuencia de frecuencia fija o variable, que comprende: al menos un elemento inductivo (Lp), que puede ser alimentado, en uso, por dicha al menos una fuente (3) de alimentación; al menos un elemento capacitivo (Cp), conectado eléctricamente a los terminales de dicho al menos un elemento inductivo (Lp); dicho al menos un dispositivo (2) tiene una frecuencia angular de resonancia igual a **(Ver fórmula)** caracterizado porque dicho elemento capacitivo (Cp) y dicho elemento inductivo (Lp) tienen cada uno valores tales que, en estado de 20 resonancia, proporcionan una impedancia equivalente, medida en los terminales de dicho dispositivo (2), sustancialmente de tipo resistivo y mucho mayor, que, a modo de referencia, se pretende que sea de aproximadamente 10 a 100 veces mayor que la impedancia parásita antes de los terminales de dicho dispositivo (2), de modo que el efecto de dicha impedancia parásita es, en uso, sustancialmente insignificante.

3. 发明专利

NZ734420A A device intrinsically designed to resonate, suitable for rf power transfer as well as group including such device and usable for the production of plasma 未知
公开(公告)号：NZ734420A
公开(公告)日：2019-06-28
申请号：NZ73442016
申请日：2016-01-15
申请人： PAVARIN DANIELE , SELMO ANTONIO FRANCO , TREZZOLANI FABIO , MANENTE MARCO
发明人： SELMO ANTONIO FRANCO
IPC分类号： H01J37/32 , H02J50/00
摘要： The present invention is directed to the field of generation of materials using radio frequency (RF) power and particularly relates to a device, apparatus, method and a group consisting of such device for achieving resonance intrinsically for the generation of materials. The solutions provided by the state of the art have inefficient RF power transfer capabilities due to various reasons such as very low modulus inductive component compared to the parasitic impedance of the RF circuits thereby reducing the power transferred by the RF power supply. Moreover, current RF power supplies are powered mainly by RF sine wave power supplies. The present invention addresses the above problems by providing a device configured to resonate intrinsically to efficiently transfer RF power to a load contained therein e.g. a gas, for the production of materials such as plasma. The device in accordance with the present invention comprises an inductive element, a capacitive element and an electrical wire connection between an RF power amplifier and the device, each of the inductive element and the capacitive element having values such that at resonance, they provide an equivalent impedance substantially of the resistive type, measured at the terminals of the device, making the parasitic impedance upstream of the terminals of the device substantially negligible. Uses of the present invention include generation of materials. Specifically, the present invention may be used to generate plasma from a gas input to the claimed device.

4. 发明授权

EP3257065B1 A DEVICE INTRINSICALLY DESIGNED TO RESONATE, SUITABLE FOR RF POWER TRANSFER AS WELL AS GROUP INCLUDING SUCH DEVICE AND USABLE FOR THE PRODUCTION OF PLASMA 有权
公开(公告)号：EP3257065B1
公开(公告)日：2020-11-04
申请号：EP16709117.2
申请日：2016-01-15
申请人： Selmo, Antonio Franco , Pavarin, Daniele , Trezzolani, Fabio , Manente, Marco
发明人： SELMO, Antonio Franco
IPC分类号： H01J37/32

5. 发明公开

EP3257065A1 A DEVICE INTRINSICALLY DESIGNED TO RESONATE, SUITABLE FOR RF POWER TRANSFER AS WELL AS GROUP INCLUDING SUCH DEVICE AND USABLE FOR THE PRODUCTION OF PLASMA 有权
标题翻译：一种本质上设计为谐振的器件，适用于射频功率传输以及包括此类器件在内的群组，并可用于生产等离子体
公开(公告)号：EP3257065A1
公开(公告)日：2017-12-20
申请号：EP16709117.2
申请日：2016-01-15
申请人： Selmo, Antonio Franco , Pavarin, Daniele , Trezzolani, Fabio , Manente, Marco
发明人： SELMO, Antonio Franco
IPC分类号： H01J37/32
摘要： The present invention regards a device intrinsically designed to resonate, suitable for RF power transfer, particularly usable for the production of plasma and electrically connectable downstream of a radio frequency power supply with fixed or variable frequency, comprising at least one inductive element (Lp), which can be powered, during use, by such at least one power supply; at least one capacitive element (Cp) electrically connected at the terminals of such at least one inductive element (Lp); such at least one device having a resonance angular frequency equal to: ωo=1/√LpCp. The capacitive element (Cp) and the inductive element (Lp) have values such that, at resonance state, they provide an equivalent impedance, measured at the terminals of such device, substantially of resistive type and much greater than the value of the parasitic impedance upstream of such terminals of such device, such that the effect of such parasitic impedance is, during use, substantially negligible.

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