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    • 2. 发明授权
    • Control apparatus for DC-DC converter
    • DC-DC转换器控制装置
    • US09397572B2
    • 2016-07-19
    • US13561453
    • 2012-07-30
    • Yuuki SuzukiToshiyuki KounoShinya Goto
    • Yuuki SuzukiToshiyuki KounoShinya Goto
    • H02M3/335H02M1/32H02J7/14H02M1/00
    • H02M3/33507H02J7/1423H02M1/32H02M2001/0022
    • An apparatus controls a DC-DC converter that converts an input voltage to an output voltage. The DC-DC converter includes a switching element having a duty ratio controlled by the apparatus to regulate the output voltage, a first transformer, a second transformer and a capacitor. A terminal voltage applied between input and output terminals of the switching element varies depending on the duty ratio and the input voltage. The apparatus may be configured to: limit the duty ratio in response to the input voltage represented by a modulated signal; enable the DC-DC converter to continue to convert the input voltage to the output voltage when an abnormal condition of the modulated signal is determined; and limit the duty ratio of the switching element when the abnormal condition is determined. Main and sub switching elements of the switching element and the capacitor are disposed between the first and second transformers.
    • 一种装置控制将输入电压转换为输出电压的DC-DC转换器。 DC-DC转换器包括具有由该装置控制的负载比来调节输出电压的开关元件,第一变压器,第二变压器和电容器。 施加在开关元件的输入和输出端子之间的端子电压根据占空比和输入电压而变化。 该装置可以被配置为:响应于由调制信号表示的输入电压来限制占空比; 当确定调制信号的异常状态时,使DC-DC转换器继续将输入电压转换为输出电压; 并且在确定异常状态时限制开关元件的占空比。 开关元件和电容器的主开关元件和副开关元件设置在第一和第二变压器之间。
    • 6. 发明申请
    • Method of heat treatment and heat treatment apparatus
    • 热处理和热处理装置的方法
    • US20060249073A1
    • 2006-11-09
    • US10548825
    • 2004-03-10
    • Yasushi AsaokaTadaaki KanekoNakatsu SanoHiroshi KawaiTomohira IwazakiSeiji YamaguchiHiroyuki MatsumotoToshiyuki Kouno
    • Yasushi AsaokaTadaaki KanekoNakatsu SanoHiroshi KawaiTomohira IwazakiSeiji YamaguchiHiroyuki MatsumotoToshiyuki Kouno
    • C30B23/00C30B25/00C30B28/12C30B28/14
    • C30B33/02C30B19/00C30B29/36
    • The present invention is a method suitable for heat treatment, or a heat treatment method for growing single crystal silicon carbide by a liquid phase epitaxial method, wherein a monocrystal silicon carbide substrate as a seed crystal and a polycrystal silicon carbide substrate are piled up, placed inside a closed container, and subjected to high-temperature heat treatment, by which very thin metallic silicon melt layer is interposed between the monocrystal silicon carbide substrate and the polycrystal silicon carbide substrate during heat treatment, and single crystal silicon carbide is liquid-phase epitaxially grown on the monocrystal silicon carbide substrate. The closed container is in advance heated to a temperature exceeding approximately 800° C. in an preheating chamber kept at a pressure of approximately 10−5 Pa or lower, the closed container is reduced in pressure to approximately 10−5 Pa or lower, and the container is transported and placed in the heat chamber, which is in advance heated to a prescribed temperature in a range from approximately 1400° C. to 2300° C., in a vacuum at a pressure of approximately 10−2 Pa or lower or in an inert gas atmosphere at a prescribed reduced pressure, by which the monocrystal silicon carbide substrate and the polycrystal silicon carbide substrate are heated in a short time to a prescribed temperature in a range from approximately 1400° C. to 2300° C. to produce single crystal silicon carbide which is free of fine grain boundaries and approximately 1/cm2 or lower in density of micropipe defects on the surface. Further, the present invention is heat treatment equipment used in carrying out the heat treatment method.
    • 本发明是适用于热处理的方法,或通过液相外延法生长单晶碳化硅的热处理方法,其中堆积作为晶种的单晶碳化硅基板和多晶碳化硅基板,放置 在密闭容器内,进行高温热处理,在热处理过程中,在单晶碳化硅基板和多晶碳化硅基板之间插入非常薄的金属硅熔融层,单晶碳化硅是液相外延 生长在单晶碳化硅衬底上。 在保持在约10 -5 Pa或更低的压力的预热室中,将密封容器预先加热至超过约800℃的温度,将密封容器减压至约10℃ 低于-5℃,并且将容器输送并放置在预先加热到约1400℃至2300℃范围内的规定温度的加热室中,在 在大约10 -2 Pa或更低的压力下或在惰性气体气氛中以规定的减压下的真空,单晶碳化硅衬底和多晶碳化硅衬底在短时间内被加热 时间达到在约1400℃至2300℃的范围内的规定温度,以产生不含细晶粒边界和约1 / cm 2或更低密度的单晶碳化硅 表面上存在微管缺陷。 此外,本发明是用于实施热处理方法的热处理设备。
    • 8. 发明申请
    • CONTROL APPARATUS FOR DC-DC CONVERTER
    • DC-DC转换器的控制装置
    • US20130027978A1
    • 2013-01-31
    • US13561453
    • 2012-07-30
    • Yuuki SuzukiToshiyuki KounoShinya Goto
    • Yuuki SuzukiToshiyuki KounoShinya Goto
    • H02M3/24
    • H02M3/33507H02J7/1423H02M1/32H02M2001/0022
    • An apparatus that controls a DC-DC converter including a switching element of which duty ratio is controlled by the apparatus to regulate the output voltage includes: acquiring device for acquiring the input voltage; converting device for converting the input voltage to a modulated signal representing the input voltage; first limiting section for limiting the duty ratio of the switching element in response to the input voltage represented by the modulated signal; first determining section for determining whether or not the modulated signal is in abnormal condition; and enabling section for enabling the DC-DC converter to continue to convert the input voltage to the output voltage when the determining section determines the abnormal condition. The enabling section includes second limiting section for limiting the duty ratio of the switching element, the second limiting section limits the duty ratio of the switching element when the determining section determines the abnormal condition.
    • 一种控制DC-DC转换器的装置,包括:由装置控制占空比以调节输出电压的开关元件,包括:用于获取输入电压的获取装置; 转换装置,用于将输入电压转换成表示输入电压的调制信号; 第一限制部分,用于响应于由调制信号表示的输入电压来限制开关元件的占空比; 第一确定部分,用于确定调制信号是否处于异常状态; 以及启用部分,用于当确定部分确定异常状况时,使得DC-DC转换器继续将输入电压转换为输出电压。 使能部分包括用于限制开关元件的占空比的第二限制部分,当确定部分确定异常状态时,第二限制部分限制开关元件的占空比。