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1. 发明授权

US08404497B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08404497B2
公开(公告)日：2013-03-26
申请号：US12946131
申请日：2010-11-15
申请人： Kazuya Maruyama , Toshikazu Ishikawa , Jun Matsuhashi , Takashi Kikuchi
发明人： Kazuya Maruyama , Toshikazu Ishikawa , Jun Matsuhashi , Takashi Kikuchi
IPC分类号： H01L21/66
CPC分类号： H01L23/49838 , H01L22/32 , H01L23/3121 , H01L23/49816 , H01L24/16 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0657 , H01L25/105 , H01L2224/05554 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48227 , H01L2224/48228 , H01L2224/48229 , H01L2224/49175 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2225/06562 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01013 , H01L2924/01014 , H01L2924/01028 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/078 , H01L2924/10161 , H01L2924/10162 , H01L2924/14 , H01L2924/15192 , H01L2924/15311 , H01L2924/15331 , H01L2924/3011 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/45015 , H01L2924/207
摘要： A surface mount type semiconductor device is disclosed. The semiconductor device has testing lands on a lower surface of a wiring substrate with a semiconductor chip mounted thereon. Lower surface-side lands with solder balls coupled thereto respectively and testing lands with solder balls not coupled thereto are formed on a lower surface of a wiring substrate. To suppress the occurrence of contact imperfection between the testing lands and land contacting contact pins provided in a probe socket, the diameter of each testing land is set larger than the diameter of each lower surface-side land. Even when the wiring substrate is reduced in size, electrical characteristic tests using the testing lands can be done with high accuracy.
摘要翻译：公开了一种表面贴装型半导体器件。半导体器件具有安装在其上的半导体芯片的布线基板的下表面上的测试焊盘。具有与其分别耦合的焊料球的下表面侧焊盘和在其没有耦合的焊球的测试焊盘形成在布线基板的下表面上。为了抑制测试台和设置在探针插座中的接地触针之间的接触不良的发生，每个测试台的直径被设定为大于每个下表面侧的直径。即使布线基板的尺寸减小，也可以高精度地进行使用测试台面的电特性测试。

2. 发明授权

US08222738B2 Semiconductor device, and manufacturing method therefor 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08222738B2
公开(公告)日：2012-07-17
申请号：US13212311
申请日：2011-08-18
申请人： Yusuke Ota , Michiaki Sugiyama , Toshikazu Ishikawa , Mikako Okada
发明人： Yusuke Ota , Michiaki Sugiyama , Toshikazu Ishikawa , Mikako Okada
IPC分类号： H01L21/56
CPC分类号： H01L23/49838 , H01L21/563 , H01L23/3128 , H01L23/49816 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/03 , H01L25/0657 , H01L25/105 , H01L2224/05001 , H01L2224/05026 , H01L2224/05568 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/81191 , H01L2224/814 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01019 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/00 , H01L2924/014 , H01L2924/00012 , H01L2224/85 , H01L2224/83 , H01L2224/81 , H01L2224/05599 , H01L2224/05099
摘要： To provide a semiconductor device with improved reliability. The semiconductor device includes a wiring board, a microcomputer chip flip-chip bonded over the wiring board via gold bumps, a first memory chip laminated over the microcomputer chip, wires for coupling the first memory chip to the wiring board, an underfill material with which a flip-chip coupling portion of the microcomputer chip is filled, and a sealing member for sealing the microcomputer chip and the first memory chip with resin. Further, the corner of a second opening portion of a solder resist film of the wiring board corresponding to the corner of the chip on the air vent side in charging the underfill material is made close to the microcomputer chip, which can improve the wettability and spread of the underfill material at the second opening portion, thus reducing the exposure of leads to the second opening portion, thereby improving the reliability of the semiconductor device.
摘要翻译：提供具有改善的可靠性的半导体器件。半导体器件包括布线板，通过金凸块接合在布线板上的微计算机芯片倒装芯片，叠置在微计算机芯片上的第一存储芯片，用于将第一存储器芯片耦合到布线板的导线，用于将第一存储器芯片耦合到布线板的底部填充材料，填充微型计算机芯片的倒装芯片连接部分，以及用树脂密封微型计算机芯片和第一存储器芯片的密封构件。此外，在对底部填充材料充电时，对应于排气侧的芯片的角部的布线板的阻焊膜的第二开口部分的角部靠近微型计算机芯片，这可以提高润湿性和扩展的第二开口部分的底部填充材料，从而减少了引线到第二开口部分的暴露，从而提高了半导体器件的可靠性。

3. 发明授权

US08159057B2 Semiconductor device and manufacturing method therefor 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08159057B2
公开(公告)日：2012-04-17
申请号：US12423826
申请日：2009-04-15
申请人： Mikako Okada , Toshikazu Ishikawa
发明人： Mikako Okada , Toshikazu Ishikawa
IPC分类号： H01L23/06
CPC分类号： H01L23/50 , H01L21/561 , H01L23/3128 , H01L23/49827 , H01L23/49838 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/28 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/18 , H01L2224/0401 , H01L2224/04042 , H01L2224/05553 , H01L2224/056 , H01L2224/05624 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48228 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/49171 , H01L2224/49431 , H01L2224/73204 , H01L2224/73265 , H01L2224/75 , H01L2224/75251 , H01L2224/81203 , H01L2224/81801 , H01L2224/83101 , H01L2224/83102 , H01L2224/83192 , H01L2224/83855 , H01L2224/85051 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85986 , H01L2224/92125 , H01L2224/92247 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/06562 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10162 , H01L2924/12041 , H01L2924/14 , H01L2924/1517 , H01L2924/15183 , H01L2924/15192 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/30105 , H01L2924/3511 , H01L2224/83 , H01L2224/85 , H01L2224/81 , H01L2224/85186 , H01L2924/00012 , H01L2924/00 , H01L2224/13111 , H01L2924/3512 , H01L2224/45099 , H01L2224/4554
摘要： The mounting height of a semiconductor device is reduced. A wiring substrate has an upper surface with multiple bonding leads formed therein and a lower surface with multiple lands formed therein. This wiring substrate is a multilayer wiring substrate and multiple wiring layers and multiple insulating layers are alternately formed on the upper surface side and on the lower surface side of the core material of the wiring substrate. The bonding leads are formed of part of the uppermost wiring layer and the lands are formed of part of the lowermost wiring layer. The insulating layers include second insulating layers containing fiber and resin and third insulating layers smaller in fiber content than the second insulating layers. The second insulating layers are formed on the upper surface side and on the lower surface side of the core material. The third insulating layers are formed on the upper surface side and on the lower surface side of the core material with the second insulating layers in-between. The uppermost wiring layer and the lowermost wiring layer are formed over the third insulating layers.
摘要翻译：降低了半导体器件的安装高度。布线基板具有形成在其中的多个接合引线的上表面和形成有多个焊盘的下表面。该布线基板是多层布线基板，并且在布线基板的芯材的上表面侧和下表面侧交替形成多个布线层和多个绝缘层。接合引线由最上层布线层的一部分形成，焊盘由最下层布线层的一部分形成。绝缘层包括含有纤维和树脂的第二绝缘层和比第二绝缘层小的纤维含量的第三绝缘层。第二绝缘层形成在芯材的上表面侧和下表面侧上。第三绝缘层形成在芯材的上表面侧和下表面侧，其间具有第二绝缘层。最上面的布线层和最下面的布线层形成在第三绝缘层上。

4. 发明申请

US20120083073A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US20120083073A1
公开(公告)日：2012-04-05
申请号：US13235247
申请日：2011-09-16
申请人： Yusuke TANUMA , Toshikazu Ishikawa
发明人： Yusuke TANUMA , Toshikazu Ishikawa
IPC分类号： H01L21/58
CPC分类号： H01L24/97 , H01L21/4846 , H01L21/563 , H01L23/49822 , H01L23/49838 , H01L23/50 , H01L24/04 , H01L24/06 , H01L24/16 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/105 , H01L25/50 , H01L2224/0401 , H01L2224/04042 , H01L2224/05553 , H01L2224/06153 , H01L2224/06155 , H01L2224/131 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/26175 , H01L2224/27013 , H01L2224/2919 , H01L2224/32225 , H01L2224/45144 , H01L2224/48095 , H01L2224/48227 , H01L2224/48228 , H01L2224/49175 , H01L2224/73204 , H01L2224/73265 , H01L2224/81097 , H01L2224/81193 , H01L2224/81194 , H01L2224/83051 , H01L2224/831 , H01L2224/83102 , H01L2224/92125 , H01L2224/97 , H01L2225/1023 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/0665 , H01L2924/078 , H01L2924/15174 , H01L2924/15192 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/351 , H01L2224/81 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/3512
摘要： It is aimed at improving the reliability of a semiconductor device.In a POP having an upper package stacked on a lower package, an opening of a first solder resist film in a first region between a first group of lands arranged at the periphery of an front surface of a wiring substrate of the lower package and a second group of lands arranged in a central part is filled with a second solder resist film, and thereby the formation of a starting point of cracks in the opening becomes unlikely to suppress occurrence of cracks and improve the reliability of the POP.
摘要翻译：旨在提高半导体器件的可靠性。在具有堆叠在下封装上的上封装的POP中，在布置在下封装的布线基板的正面的周边的第一组焊盘之间的第一区域中的第一阻焊膜的开口和第二焊盘设置在中心部分的一组焊盘填充有第二阻焊膜，从而在开口中形成裂纹的起点不太可能抑制裂纹的发生并提高POP的可靠性。

5. 发明授权

US08138022B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08138022B2
公开(公告)日：2012-03-20
申请号：US12793923
申请日：2010-06-04
申请人： Michiaki Sugiyama , Takashi Miwa , Toshikazu Ishikawa , Tatsuya Hirai
发明人： Michiaki Sugiyama , Takashi Miwa , Toshikazu Ishikawa , Tatsuya Hirai
IPC分类号： H01L21/00
CPC分类号： H01L23/49833 , H01L24/16 , H01L24/48 , H01L24/97 , H01L25/0655 , H01L25/0657 , H01L25/105 , H01L25/16 , H01L25/18 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16225 , H01L2224/32225 , H01L2224/48227 , H01L2224/73204 , H01L2224/97 , H01L2225/1035 , H01L2225/1058 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15153 , H01L2924/1517 , H01L2924/15183 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2224/81 , H01L2924/00 , H01L2224/05599 , H01L2224/45099 , H01L2224/45015 , H01L2924/207 , H01L2224/0555 , H01L2224/0556
摘要： A first conductive member made of metal is provided over a first wiring substrate, which is a mounting substrate in the lower tier, a through hole is provided in a second wiring substrate, which is a mounting substrate in the upper tier, at a position corresponding to the first conductive member in a plan view, and a wiring is exposed at the sidewall of the through hole. The first conductive member is inserted into the through hole on the corresponding first wiring substrate side and the first wiring substrate and the second wiring substrate are electrically coupled by filling the through hole with a second conductive member. an electrode pad that is electrically coupled to the second conductive member and over which a semiconductor member in the upper tier is mounted is formed on the main surface side of the second wiring substrate.
摘要翻译：金属制的第一导电部件设置在第一布线基板上，第一布线基板是下层中的安装基板，通孔设置在第二布线基板中，第二布线基板是上层中的安装基板，在平面图中的第一导电构件，并且布线在通孔的侧壁处露出。将第一导电构件插入对应的第一布线基板侧的通孔中，并且通过用第二导电构件填充通孔来电耦合第一布线基板和第二布线基板。在第二布线基板的主表面侧形成有电耦合到第二导电构件并且在其上安装上层中的半导体构件的电极焊盘。

6. 发明申请

US20100314757A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100314757A1
公开(公告)日：2010-12-16
申请号：US12777408
申请日：2010-05-11
申请人： Michiaki SUGIYAMA , Takashi MIWA , Toshikazu ISHIKAWA
发明人： Michiaki SUGIYAMA , Takashi MIWA , Toshikazu ISHIKAWA
IPC分类号： H01L23/498 , H01L21/56
CPC分类号： H01L21/561 , H01L21/486 , H01L23/49827 , H01L23/5389 , H01L24/16 , H01L24/48 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L2224/48091 , H01L2224/48105 , H01L2224/48227 , H01L2224/48228 , H01L2224/73204 , H01L2224/97 , H01L2225/06517 , H01L2225/06541 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/15183 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19043 , H01L2224/81 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： In a POP semiconductor device, a technology is provided which can increase the degree of freedom of semiconductor packages to be combined. A first metal conductive member is placed on a first wiring substrate which is a lower mounting substrate and a second metal conductive member is placed on a second wiring substrate which is an upper mounting substrate. By joining the corresponding portions of the first and second conductive members, the first and second wiring substrates are electrically coupled to each other. An electrode pad which is electrically coupled to the second conductive member and will have an upper semiconductor member 32 mounted thereon is formed on the main surface side of the second wiring substrate, and the electrode pad is also placed at a position planarly overlapping the lower semiconductor chip.
摘要翻译：在POP半导体器件中，提供了可以提高要组合的半导体封装的自由度的技术。第一金属导电部件被放置在作为下安装基板的第一布线基板上，第二金属导电部件被放置在作为上安装基板的第二布线基板上。通过连接第一和第二导电构件的相应部分，第一和第二布线基板彼此电耦合。在第二布线基板的主表面侧上形成电耦合到第二导电构件并且将其上安装有上半导体构件32的电极焊盘，并且电极焊盘也被放置在与下半导体芯片。

7. 发明申请

US20090294978A1 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090294978A1
公开(公告)日：2009-12-03
申请号：US12430277
申请日：2009-04-27
申请人： Yusuke OTA , Michiaki SUGIYAMA , Toshikazu ISHIKAWA , Mikako OKADA
发明人： Yusuke OTA , Michiaki SUGIYAMA , Toshikazu ISHIKAWA , Mikako OKADA
IPC分类号： H01L23/498 , H01L21/56
CPC分类号： H01L23/49838 , H01L21/563 , H01L23/3128 , H01L23/49816 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/97 , H01L25/03 , H01L25/0657 , H01L25/105 , H01L2224/05001 , H01L2224/05026 , H01L2224/05568 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45015 , H01L2224/45144 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/73203 , H01L2224/73204 , H01L2224/73265 , H01L2224/81191 , H01L2224/814 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01019 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/14 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/00 , H01L2924/014 , H01L2924/00012 , H01L2224/85 , H01L2224/83 , H01L2224/81 , H01L2224/05599 , H01L2224/05099
摘要： To provide a semiconductor device with improved reliability. The semiconductor device includes a wiring board, a microcomputer chip flip-chip bonded over the wiring board via gold bumps, a first memory chip laminated over the microcomputer chip, wires for coupling the first memory chip to the wiring board, an underfill material with which a flip-chip coupling portion of the microcomputer chip is filled, and a sealing member for sealing the microcomputer chip and the first memory chip with resin. Further, the corner of a second opening portion of a solder resist film of the wiring board corresponding to the corner of the chip on the air vent side in charging the underfill material is made close to the microcomputer chip, which can improve the wettability and spread of the underfill material at the second opening portion, thus reducing the exposure of leads to the second opening portion, thereby improving the reliability of the semiconductor device.
摘要翻译：提供具有改善的可靠性的半导体器件。半导体器件包括布线板，通过金凸块接合在布线板上的微计算机芯片倒装芯片，叠置在微计算机芯片上的第一存储芯片，用于将第一存储器芯片耦合到布线板的导线，用于将第一存储器芯片耦合到布线板的底部填充材料，填充微型计算机芯片的倒装芯片连接部分，以及用树脂密封微型计算机芯片和第一存储器芯片的密封构件。此外，在对底部填充材料充电时，对应于排气侧的芯片的角部的布线板的阻焊膜的第二开口部分的角部靠近微型计算机芯片，这可以提高润湿性和扩展的第二开口部分的底部填充材料，从而减少了引线到第二开口部分的暴露，从而提高了半导体器件的可靠性。

8. 发明申请

US20090294945A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090294945A1
公开(公告)日：2009-12-03
申请号：US12423826
申请日：2009-04-15
申请人： Mikako Okada , Toshikazu Ishikawa
发明人： Mikako Okada , Toshikazu Ishikawa
IPC分类号： H01L23/522 , H01L23/498 , H01L21/50
CPC分类号： H01L23/50 , H01L21/561 , H01L23/3128 , H01L23/49827 , H01L23/49838 , H01L24/05 , H01L24/06 , H01L24/16 , H01L24/28 , H01L24/48 , H01L24/49 , H01L24/73 , H01L24/75 , H01L24/81 , H01L24/83 , H01L24/85 , H01L24/97 , H01L25/0657 , H01L25/105 , H01L25/18 , H01L2224/0401 , H01L2224/04042 , H01L2224/05553 , H01L2224/056 , H01L2224/05624 , H01L2224/1134 , H01L2224/13099 , H01L2224/13144 , H01L2224/16225 , H01L2224/16227 , H01L2224/16237 , H01L2224/29111 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/48091 , H01L2224/48095 , H01L2224/48227 , H01L2224/48228 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/49171 , H01L2224/49431 , H01L2224/73204 , H01L2224/73265 , H01L2224/75 , H01L2224/75251 , H01L2224/81203 , H01L2224/81801 , H01L2224/83101 , H01L2224/83102 , H01L2224/83192 , H01L2224/83855 , H01L2224/85051 , H01L2224/85201 , H01L2224/85203 , H01L2224/85205 , H01L2224/85986 , H01L2224/92125 , H01L2224/92247 , H01L2224/97 , H01L2225/0651 , H01L2225/06517 , H01L2225/06562 , H01L2225/1023 , H01L2225/1058 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01083 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/0665 , H01L2924/07802 , H01L2924/10162 , H01L2924/12041 , H01L2924/14 , H01L2924/1517 , H01L2924/15183 , H01L2924/15192 , H01L2924/15311 , H01L2924/15331 , H01L2924/181 , H01L2924/30105 , H01L2924/3511 , H01L2224/83 , H01L2224/85 , H01L2224/81 , H01L2224/85186 , H01L2924/00012 , H01L2924/00 , H01L2224/13111 , H01L2924/3512 , H01L2224/45099 , H01L2224/4554
摘要： The mounting height of a semiconductor device is reduced. A wiring substrate has an upper surface with multiple bonding leads formed therein and a lower surface with multiple lands formed therein. This wiring substrate is a multilayer wiring substrate and multiple wiring layers and multiple insulating layers are alternately formed on the upper surface side and on the lower surface side of the core material of the wiring substrate. The bonding leads are formed of part of the uppermost wiring layer and the lands are formed of part of the lowermost wiring layer. The insulating layers include second insulating layers containing fiber and resin and third insulating layers smaller in fiber content than the second insulating layers. The second insulating layers are formed on the upper surface side and on the lower surface side of the core material. The third insulating layers are formed on the upper surface side and on the lower surface side of the core material with the second insulating layers in-between. The uppermost wiring layer and the lowermost wiring layer are formed over the third insulating layers.
摘要翻译：降低了半导体器件的安装高度。布线基板具有形成在其中的多个接合引线的上表面和形成有多个焊盘的下表面。该布线基板是多层布线基板，并且在布线基板的芯材的上表面侧和下表面侧交替形成多个布线层和多个绝缘层。接合引线由最上层布线层的一部分形成，焊盘由最下层布线层的一部分形成。绝缘层包括含有纤维和树脂的第二绝缘层和比第二绝缘层小的纤维含量的第三绝缘层。第二绝缘层形成在芯材的上表面侧和下表面侧上。第三绝缘层形成在芯材的上表面侧和下表面侧，其间具有第二绝缘层。最上面的布线层和最下面的布线层形成在第三绝缘层上。

9. 发明申请

US20080083978A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080083978A1
公开(公告)日：2008-04-10
申请号：US11946581
申请日：2007-11-28
申请人： Yoshinari Hayashi , Toshikazu Ishikawa , Takayuki Hoshino
发明人： Yoshinari Hayashi , Toshikazu Ishikawa , Takayuki Hoshino
IPC分类号： H01L23/488
CPC分类号： H01L23/49816 , H01L22/32 , H01L23/49838 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/0657 , H01L25/18 , H01L2224/0401 , H01L2224/05553 , H01L2224/0603 , H01L2224/06179 , H01L2224/16225 , H01L2224/32145 , H01L2224/32225 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2224/49175 , H01L2224/73204 , H01L2224/73253 , H01L2224/73265 , H01L2225/0651 , H01L2225/06517 , H01L2225/06582 , H01L2225/06596 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10161 , H01L2924/12041 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/19041 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device having a first semiconductor chip with an SDRAM and a second semiconductor chip with a an MPU controlling the SDRAM. The contour size of the semiconductor device is reduced to a smaller size without impairing the testability of the first semiconductor chip. The two semiconductor chips are stacked over the top surface of an interconnect substrate and sealed in a molding resin, thus forming an SiP (System-in-Package). First terminals electrically connected with the second chip are arranged as external terminals of the SiP on the outer periphery of the bottom surface of the interconnect substrate. Plural second electrodes electrically connected with interconnects, which electrically connect the two chips, are mounted as terminals for testing of the SDRAM. The second electrodes are located more inwardly than the innermost row of the first external electrodes on the bottom surface of the interconnect substrate.
摘要翻译：具有SDRAM的第一半导体芯片和具有控制SDRAM的MPU的第二半导体芯片的半导体器件。半导体器件的轮廓尺寸减小到更小的尺寸，而不损害第一半导体芯片的可测试性。将两个半导体芯片堆叠在互连基板的顶表面上并密封在模制树脂中，从而形成SiP（系统级封装）。与第二芯片电连接的第一端子被布置为在互连基板的底表面的外周上的SiP的外部端子。电连接两个芯片的互连电连接的多个第二电极被安装作为用于测试SDRAM的端子。第二电极比互连基板的底表面上的第一外部电极的最内排更向内定位。

10. 发明授权

US5433266A Vehicle air-conditioning apparatus 失效
标题翻译：车用空调机
公开(公告)号：US5433266A
公开(公告)日：1995-07-18
申请号：US128284
申请日：1993-09-29
申请人： Shigetoshi Doi , Eiji Ukita , Hiroshi Asou , Yasuhiro Enno , Takashi Tsuchida , Toshikazu Ishikawa
发明人： Shigetoshi Doi , Eiji Ukita , Hiroshi Asou , Yasuhiro Enno , Takashi Tsuchida , Toshikazu Ishikawa
IPC分类号： B60H1/00 , F25B29/00
CPC分类号： B60H1/00821
摘要： The present invention relates to an air-conditioning apparatus provided in an vehicle. The apparatus is adapted to deliver conditioned air into a passenger compartment so as to regulate an interior temperature of a passenger compartment at a desired temperature. The apparatus comprises a temperature regulating device for regulating an outlet air temperature, a blower, and a controller for setting a target outlet air temperature and volume. The controller includes comfortability index setting means for setting a comfortability index which is a function of at least an outlet air temperature and volume and which is an indication representing a degree of a passenger's comfort, a variable temperature setting device located in the passenger compartment for a manual presetting of a desired interior temperature, and variable target setting means for setting a target value of the comfortability index dependent on the preset interior temperature, and air temperature and volume setting means for setting a combination of said target outlet air temperature and volume which allows the comfortability index to be approximated to the target value thereof.
摘要翻译：本发明涉及一种设置在车辆中的空调装置。该装置适于将调节空气输送到乘客舱中，以便将所述乘客舱的内部温度调节到期望的温度。该装置包括用于调节出口空气温度的温度调节装置，鼓风机和用于设定目标出口空气温度和体积的控制器。该控制器包括舒适度指标设定装置，用于设定作为至少出口空气温度和体积的函数的舒适度指标，其表示乘客的舒适程度，位于乘客室内的可变温度设定装置，手动预设所需的内部温度，以及可变目标设定装置，用于根据预设的内部温度设定舒适度指标的目标值;以及空气温度和体积设定装置，用于设定所述目标出口空气温度和容积的组合舒适度指数近似于其目标值。

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