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1. 发明申请

US20110146578A1 SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工设备
公开(公告)号：US20110146578A1
公开(公告)日：2011-06-23
申请号：US12906582
申请日：2010-10-18
申请人： Tomoshi Taniyama
发明人： Tomoshi Taniyama
IPC分类号： C23C16/02
CPC分类号： C23C16/54 , H01L21/68707
摘要： There are provided a substrate placing plate and a substrate processing apparatus using the substrate placing plate. The substrate processing apparatus comprises a process chamber configured to accommodate a substrate and perform a heat treatment on the substrate; and a substrate transfer machine configured to carry the substrate into the process chamber in a state where the substrate is placed on a substrate placing plate. The substrate placing plate comprises at least three substrate placing parts. The substrate placing parts are located on the same horizontal plane, and in a state where the substrate placing parts are located at a top side of the substrate placing plate, top surfaces of the substrate placing parts are higher than a surface of the substrate placing plate surrounded by the substrate placing parts and are higher than all peripheral surfaces of the substrate placing parts.
摘要翻译：提供了基板放置板和使用基板放置板的基板处理装置。基板处理装置包括处理室，其被配置为容纳基板并对基板进行热处理; 以及基板转印机，其被配置为在将基板放置在基板放置板上的状态下将基板输送到处理室中。基板放置板包括至少三个基板放置部分。基板放置部位于同一水平面上，在基板配置部位于基板载置板的上侧的状态下，基板载置部的顶面高于基板载置板的表面被基板放置部分包围并且高于基板放置部件的所有外围表面。

2. 发明申请

US20060150904A1 Substrate-processing apparatus and method of producing a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US20060150904A1
公开(公告)日：2006-07-13
申请号：US10528137
申请日：2004-02-20
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： H01L21/20 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在所述小室（43）中的用于允许所述第一气体流入所述反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的用于将第二气体供应到所述反应炉（39）中的进料管（a1）。诸如NH 4 Cl的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产产量因此增加。

3. 发明授权

US5632820A Thermal treatment furnace in a system for manufacturing semiconductors 失效
标题翻译：一种制造半导体系统的热处理炉
公开(公告)号：US5632820A
公开(公告)日：1997-05-27
申请号：US425924
申请日：1995-04-20
申请人： Tomoshi Taniyama , Hideki Kaihotsu , Yoshikatsu Kanamori , Kazuhito Ikeda , Shuji Yonemitsu
发明人： Tomoshi Taniyama , Hideki Kaihotsu , Yoshikatsu Kanamori , Kazuhito Ikeda , Shuji Yonemitsu
IPC分类号： C23C16/44 , C30B25/14 , H01L21/22 , H01L21/324 , C23C16/00
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/14
摘要： A thermal treatment furnace for use with a semiconductor system is provided. The thermal treatment furnace includes a scavenger which sealingly encloses a lower end of a reaction tube so as to diminish gas leakage from the reaction tube.
摘要翻译：提供了一种与半导体系统一起使用的热处理炉。热处理炉包括密封地包围反应管的下端的清除剂，以减少从反应管中的气体泄漏。

4. 发明授权

US08172946B2 Semiconductor device manufacturing apparatus and manufacturing method of semiconductor device 有权
标题翻译：半导体装置的制造装置及半导体装置的制造方法
公开(公告)号：US08172946B2
公开(公告)日：2012-05-08
申请号：US11885551
申请日：2006-02-24
申请人： Tomoshi Taniyama , Yoshikazu Takashima , Mikio Ohno
发明人： Tomoshi Taniyama , Yoshikazu Takashima , Mikio Ohno
IPC分类号： C23C16/00
CPC分类号： C23C16/4412 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/3185 , H01L21/67017 , H01L21/67109
摘要： Stagnation of gas used for substrate processing in an exhaust trap is prevented, and localized precipitation of components in the gas used for substrate processing is reduced. The proposed apparatus includes a substrate processing chamber (cylindrical space 250), a gas supply tube 232 for supplying substrate processing gas to the substrate processing chamber, a first exhaust tube (upstream exhaust tube 231a) for discharging gas used for substrate processing from the substrate processing chamber, an exhaust trap 49 for removing components contained in the gas used for substrate processing introduced through the first exhaust tube, and a second exhaust tube (downstream exhaust tube 231b) for exhausting gas out of said exhaust trap 49 after components have been removed from the gas used for substrate processing, wherein the exhaust trap 49 is provided with a cooled baffle plate 59 that is substantially perpendicular to the direction in which gas is introduced into the exhaust trap 49 and that has a concave surface 59a in the side facing the gas introduction port 55a of the exhaust trap 49.
摘要翻译：防止在排气阱中用于基板处理的气体滞留，并且减少了用于基板处理的气体中的部件的局部沉淀。所提出的装置包括基板处理室（圆筒空间250），用于向基板处理室供给基板处理气体的气体供给管232，用于从基板排出用于基板处理的气体的第一排气管（上游排气管231a）处理室，用于除去包含在用于通过第一排气管引入的基板处理的气体中的部件的排气阱49和用于在部件被去除之后将气体从排气阱49排出的第二排气管（下游排气管231b）来自用于基板处理的气体，其中排气阱49设置有冷却的挡板59，该挡板基本上垂直于气体被引入排气阱49的方向，并且在面向该排气阱的一侧具有凹面59a 排气收集器49的气体导入口55a。

5. 发明申请

US20120051873A1 SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：基板加工装置及制造半导体装置的方法
公开(公告)号：US20120051873A1
公开(公告)日：2012-03-01
申请号：US13180079
申请日：2011-07-11
申请人： Koji SHIBATA , Tomoshi TANIYAMA , Takayuki NAKADA
发明人： Koji SHIBATA , Tomoshi TANIYAMA , Takayuki NAKADA
IPC分类号： H01L21/677
CPC分类号： H01L21/67201 , H01L21/67775
摘要： A substrate processing apparatus includes a substrate container holding shelf comprising a plurality of shelf boards configured to hold substrate containers thereon; a substrate container carrying mechanism configured to load and unload the substrate containers into/from the substrate container holding shelf; a substrate container holding shelf elevation mechanism configured to lift each of the plurality of the shelf boards of the substrate container holding shelf in a vertical direction; and a processing unit configured to receive at least one of the substrate containers from the substrate container holding shelf.
摘要翻译：基板处理装置包括：基板容器保持架，包括多个搁板，其构造成在其上保持基板容器; 衬底容器承载机构，其构造成将衬底容器装载到衬底容器保持架中或从衬底容器保持架上卸载; 基板容器保持搁架升降机构，其构造成在垂直方向上提升所述基板容器保持架的所述多个搁板中的每一个; 以及处理单元，其构造成从所述基板容器保持架接收所述基板容器中的至少一个。

6. 发明授权

US06495473B2 Substrate processing apparatus and method of manufacturing semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US06495473B2
公开(公告)日：2002-12-17
申请号：US10098472
申请日：2002-03-18
申请人： Tomoshi Taniyama , Kouji Tometsuka
发明人： Tomoshi Taniyama , Kouji Tometsuka
IPC分类号： H01L2131
CPC分类号： C23C16/45591 , C23C16/4401 , C23C16/455
摘要： A substrate processing apparatus, wherein a flowing direction of a gas flow which has flown upwardly and ascended in an inner tube (3A) is changed at an upper portion of the inner tube (3A) so as to be flown between the inner tube (3A) and an outer tube (2A) and exhausted outwardly, comprising: an inner tube cap 11 suited for covering the upper portion of the inner tube (3A); gas passages provided between the upper portion of the inner tube (3A) and the inner tube cap (11); and the inner tube cap (11) having a central portion protruded into an upstream of the gas flow. According to the substrate processing apparatus thus configured and a method of manufacturing a semiconductor device using the substrate processing apparatus, it is possible to prevent a reaction product from being deposited on a ceiling portion of an outer tube as well as being deposited as particles on a processing or processed substrate or substrates disposed in the inner tube. Further, it is possible to smoothly deflect the direction of a gas flow so as to allow the substrate to be uniformly processed with a high quality.
摘要翻译：一种基板处理装置，其特征在于，在内管（3A）的上部流通有在内管（3A）内上升并流动的气流的流动方向，在内管（3A））和外管（2A），并向外排出，包括：内管帽11，其适于覆盖内管（3A）的上部; 设置在内管（3A）的上部与内管盖（11）之间的气体通道; 并且所述内管帽（11）具有突出到所述气流的上游的中心部分。根据这样构成的基板处理装置以及使用基板处理装置的半导体装置的制造方法，可以防止反应产物沉积在外管的顶部，并且作为颗粒沉积在外管上处理或处理的衬底或设置在内管中的衬底。此外，可以平滑地使气流的方向偏转，以使得能够以高质量均匀地加工基板。

7. 发明授权

US5277215A Method for supplying and discharging gas to and from semiconductor manufacturing equipment and system for executing the same 失效
标题翻译：用于向半导体制造设备供给和排出气体的方法及其执行系统
公开(公告)号：US5277215A
公开(公告)日：1994-01-11
申请号：US7163
申请日：1993-01-21
申请人： Hidehiro Yanagawa , Hiroyuki Nishiuchi , Masakazu Shimada , Mitsuhiro Hirano , Tomoshi Taniyama , Kazumi Nikaido , Yoshikazu Hisajima , Michio Sato
发明人： Hidehiro Yanagawa , Hiroyuki Nishiuchi , Masakazu Shimada , Mitsuhiro Hirano , Tomoshi Taniyama , Kazumi Nikaido , Yoshikazu Hisajima , Michio Sato
IPC分类号： C30B25/14 , H01L21/00 , H01L21/677 , F04B37/14
CPC分类号： H01L21/67757 , C23C16/45561 , C30B25/14 , H01L21/67017 , Y10T137/0396 , Y10T137/2705 , Y10T137/86187
摘要： A plurality of airtight chambers are connected through blocking means, which can communicate or shut off the chambers, and at least one of the airtight chambers is used as a processing chamber. One of the adjacent airtight chambers is replaced by a replacement gas, and the replacement gas is supplied to the other of the adjacent airtight chambers. When pressure difference or pressure in the two adjacent airtight chambers is below a predetermined value, the adjacent two airtight chambers are communicated, and pressure in the two airtight chambers is equalized.
摘要翻译：多个气密室通过阻挡装置连接，可以连通或关闭室，并且至少一个气密室用作处理室。相邻的气密室中的一个被替换气体代替，并且替换气体被供应到相邻气密室中的另一个。当两个相邻气密室中的压力差或压力低于预定值时，相邻的两个气密室连通，两个气密室中的压力相等。

8. 发明申请

US20120006268A1 SUBSTRATE PROCESSING APPARATUS AND METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：基板处理装置及制造半导体器件的方法
公开(公告)号：US20120006268A1
公开(公告)日：2012-01-12
申请号：US13239889
申请日：2011-09-22
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： C23C16/44
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

9. 发明授权

US08057599B2 Substrate processing apparatus and method for manufacturing a semiconductor device 有权
公开(公告)号：US08057599B2
公开(公告)日：2011-11-15
申请号：US10528137
申请日：2004-02-20
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： H01L21/205 , H01L21/316
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.

10. 发明授权

US08043431B2 Substrate processing apparatus and method for manufacturing a semiconductor device 有权
标题翻译：基板处理装置及半导体装置的制造方法
公开(公告)号：US08043431B2
公开(公告)日：2011-10-25
申请号：US12382082
申请日：2009-03-09
申请人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
发明人： Takashi Ozaki , Tomoshi Taniyama , Hiroshi Unami , Kiyohiko Maeda , Shinya Morita , Yoshikazu Takashima , Sadao Hisakado
IPC分类号： H01L21/205 , H01L21/316
CPC分类号： C23C16/4409 , C23C16/4401 , C30B25/08
摘要： A CVD device has a reaction furnace (39) for processing a wafer (1); a seal cap (20) for sealing the reaction furnace (39) hermetically; an isolation flange (42) opposite to the seal cap (20); a small chamber (43) formed by the seal cap (20), the isolation flange (42), and the wall surface in the reaction furnace (39); a feed pipe (19b) for supplying a first gas to the small chamber (43); an outflow passage (42a) provided in the small chamber (43) for allowing the first gas to flow into the reaction furnace (39); and a feed pipe (19a) provided downstream from the outflow passage (42a) for supplying a second gas into the reaction furnace (39). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.
摘要翻译： CVD装置具有用于处理晶片（1）的反应炉（39）; 密封盖（20），用于密封反应炉（39）; 与密封盖（20）相对的隔离凸缘（42）; 由密封盖（20），隔离凸缘（42）和反应炉（39）中的壁表面形成的小室（43）; 用于将第一气体供应到所述小室（43）的进料管（19b）; 设置在小室（43）中的用于允许第一气体流入反应炉（39）的流出通道（42a）; 以及设置在所述流出通道（42a）的下游的供给管（19a），用于向所述反应炉（39）供给第二气体。诸如NH 4 Cl之类的副产物被防止粘附到诸如炉开口的低温部分，因此半导体器件的生产率提高。

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