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1. 发明授权

US09000225B2 Method for producing 2-(aryloxymethyl) benzaldehyde compound 有权
标题翻译： 2-（芳氧基甲基）苯甲醛化合物的制备方法
公开(公告)号：US09000225B2
公开(公告)日：2015-04-07
申请号：US14128248
申请日：2012-06-27
申请人： Mitsunobu Kawamura , Masashi Takimoto , Tomonori Yamaoka , Yoshio Onogawa
发明人： Mitsunobu Kawamura , Masashi Takimoto , Tomonori Yamaoka , Yoshio Onogawa
IPC分类号： C07C45/64 , C07C45/43
CPC分类号： C07C45/64 , C07C45/43 , C07C47/575 , C07C47/55
摘要： A new process for producing a 2-(aryloxymethyl)benzaldehyde compound and the like are provided. More particularly, a process for producing a 2-(aryloxymethyl)benzaldehyde compound represented by formula (4) comprising step (A) of hydrolyzing a compound represented by the following formula (1); and step (B) of reacting a compound represented by formula (2) obtained in step (A) and a compound represented by formula (3) or a salt thereof is provided; in formulae, X1, X2 and X3 each represent independently a chlorine atom, a bromine atom or an iodine atom, Q1, Q2, Q3 and Q4 each represent independently a hydrogen atom or a halogen atom, and Ar represents a phenyl group optionally having a substituent).
摘要翻译：提供了一种新的2-（芳氧基甲基）苯甲醛化合物的制备方法。更具体地，涉及制备由式（4）表示的2-（芳氧基甲基）苯甲醛化合物的方法，其包括水解下式（1）表示的化合物的步骤（A）并且提供使步骤（A）中获得的式（2）表示的化合物与由式（3）表示的化合物或其盐反应的步骤（B）在式中，X 1，X 2和X 3各自独立地表示氯原子，溴原子或碘原子，Q 1，Q 2，Q 3和Q 4各自独立地表示氢原子或卤素原子，Ar表示任选具有取代基）。

2. 发明授权

US07642178B2 Semiconductor device, method for manufacturing the same and method for evaluating the same 有权
标题翻译：半导体装置及其制造方法及其评价方法
公开(公告)号：US07642178B2
公开(公告)日：2010-01-05
申请号：US11526879
申请日：2006-09-26
申请人： Shoichi Yamauchi , Takumi Shibata , Tomonori Yamaoka , Syouji Nogami
发明人： Shoichi Yamauchi , Takumi Shibata , Tomonori Yamaoka , Syouji Nogami
IPC分类号： H01L21/00
CPC分类号： H01L29/66712 , H01L21/02381 , H01L21/02433 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02639 , H01L21/823487 , H01L29/0615 , H01L29/0634 , H01L29/1095 , H01L29/7811 , H01L29/7813
摘要： A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second epitaxial film on the first epitaxial film and in the trench. The step of forming the second epitaxial film includes a final step, in which a mixed gas of a silicon source gas and a halide gas is used. The silicon substrate has an arsenic concentration defined as α. The second epitaxial film has an impurity concentration defined as β. The arsenic concentration and the impurity concentration has a relationship of: α≦3×1019×ln(β)−1×1021.
摘要翻译：一种制造半导体器件的方法包括以下步骤：在硅衬底上形成第一外延膜; 在所述第一外延膜中形成沟槽; 以及在所述第一外延膜和所述沟槽中形成第二外延膜。形成第二外延膜的步骤包括使用硅源气体和卤化物气体的混合气体的最后步骤。硅衬底的砷浓度定义为α。第二外延膜具有定义为β的杂质浓度。砷浓度和杂质浓度具有以下关系：α<= 3×10 19×ln（β）-1×10 21。

3. 发明申请

US20070072398A1 Method for manufacturing semiconductor device and epitaxial growth equipment 有权
标题翻译：制造半导体器件和外延生长设备的方法
公开(公告)号：US20070072398A1
公开(公告)日：2007-03-29
申请号：US11528678
申请日：2006-09-28
申请人： Takumi Shibata , Shoichi Yamauchi , Tomonori Yamaoka , Syouji Nogami
发明人： Takumi Shibata , Shoichi Yamauchi , Tomonori Yamaoka , Syouji Nogami
IPC分类号： H01L21/20
CPC分类号： H01L29/7813 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L29/045 , H01L29/0634 , H01L29/66734 , H01L29/7811
摘要： A method for manufacturing a semiconductor device includes steps of: forming a trench on a main surface of a silicon substrate; forming a first epitaxial film on the main surface and in the trench; and forming a second epitaxial film on the first epitaxial film. The step of forming the first epitaxial film has a first process condition with a first growth rate of the first epitaxial film. The step of forming the second epitaxial film has a second process condition with a second growth rate of the second epitaxial film. The second growth rate is larger than the first growth rate.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在硅衬底的主表面上形成沟槽; 在主表面和沟槽中形成第一外延膜; 以及在所述第一外延膜上形成第二外延膜。形成第一外延膜的步骤具有第一外延膜的第一生长速率的第一工艺条件。形成第二外延膜的步骤具有第二外延膜的第二生长速率的第二工艺条件。第二增长率大于第一增长率。

4. 发明授权

US07033843B2 Semiconductor manufacturing method and semiconductor manufacturing apparatus 有权
标题翻译：半导体制造方法和半导体制造装置
公开(公告)号：US07033843B2
公开(公告)日：2006-04-25
申请号：US10696702
申请日：2003-10-30
申请人： Hiroyuki Hasegawa , Tomonori Yamaoka , Yoshio Ishihara , Hiroshi Masusaki
发明人： Hiroyuki Hasegawa , Tomonori Yamaoka , Yoshio Ishihara , Hiroshi Masusaki
IPC分类号： G01R31/26
CPC分类号： C23C16/4408 , C23C16/4401 , C23C16/52 , C23C16/54 , C30B25/14 , C30B25/165 , H01L21/67242 , Y10S438/906 , Y10S438/908 , Y10T29/41
摘要： A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the moisture content in the airtight space is measured by a first moisture measuring device which is connected to the airtight space, and thereafter, the substrate is inserted and ejected by a substrate carrying system, and a reactive gas is processed while measuring the moisture content in the reaction chamber by a second moisture measuring device, which is connected to the reaction chamber, after the moisture content in the airtight space is measured.
摘要翻译：通过半导体制造装置可以通过正确调整处理条件，可以高精度地进行诸如选择性外延生长的反应气体处理的半导体制造方法，该半导体制造装置可以限制水分含量的增加，防止重金属污染等，并研究了处理室和外部区域的含水量之间的相关性。在提供基板时测量反应室和反应室的气体放电系统中的含水量，并且基于水分含量调节反应气体处理条件。此外，气密空间中的水分含量通过连接到气密空间的第一湿度测量装置测量，然后由基板承载系统插入和喷射基板，并且在测量湿气的同时处理反应气体在测量气密空间中的水分含量之后，通过与反应室连接的第二水分测量装置在反应室中的含量。

5. 发明授权

US06776805B2 Semiconductor manufacturing apparatus having a moisture measuring device 有权
标题翻译：具有水分测量装置的半导体制造装置
公开(公告)号：US06776805B2
公开(公告)日：2004-08-17
申请号：US09793124
申请日：2001-02-27
申请人： Hiroyuki Hasegawa , Tomonori Yamaoka , Yoshio Ishihara , Hiroshi Masusaki
发明人： Hiroyuki Hasegawa , Tomonori Yamaoka , Yoshio Ishihara , Hiroshi Masusaki
IPC分类号： H01L2100
CPC分类号： C23C16/4408 , C23C16/4401 , C23C16/52 , C23C16/54 , C30B25/14 , C30B25/165 , H01L21/67242 , Y10S438/906 , Y10S438/908 , Y10T29/41
摘要： A semiconductor manufacturing method whereby reactive gas processing such as selective epitaxial growth can be carried out with high precision by correctly adjusting conditions during processing is performed by a semiconductor manufacturing apparatus which can restrict increases in the moisture content, prevent heavy metal pollution and the like, and investigate the correlation between moisture content in the process chamber and outside regions. The moisture content in a reaction chamber and in a gas discharge system of the reaction chamber are measured when a substrate is provided, and the conditions for reactive gas processing are adjusted based on the moisture content. Furthermore, the moisture content in the airtight space is measured by a first moisture measuring device which is connected to the airtight space, and thereafter, the substrate is inserted and ejected by a substrate carrying system, and a reactive gas is processed while measuring the moisture content in the reaction chamber by a second moisture measuring device, which is connected to the reaction chamber, after the moisture content in the airtight space is measured.
摘要翻译：通过半导体制造装置可以通过正确调整处理条件，可以高精度地进行诸如选择性外延生长的反应气体处理的半导体制造方法，该半导体制造装置可以限制水分含量的增加，防止重金属污染等，并研究了处理室和外部区域的含水量之间的相关性。在提供基板时测量反应室和反应室的气体放电系统中的含水量，并且基于水分含量调节反应气体处理条件。此外，气密空间中的水分含量通过连接到气密空间的第一湿度测量装置测量，然后由基板承载系统插入和喷射基板，并且在测量湿气的同时处理反应气体在测量气密空间中的水分含量之后，通过与反应室连接的第二湿度测量装置在反应室中的含量。

6. 发明授权

US5234843A Method of making a semiconductor film where the hydrogen and/or fluorine is released prior to ion beam crystallization 失效
标题翻译：制造在离子束结晶之前释放氢和/或氟的半导体膜的方法
公开(公告)号：US5234843A
公开(公告)日：1993-08-10
申请号：US836796
申请日：1992-01-31
申请人： Keiji Oyoshi , Tomonori Yamaoka
发明人： Keiji Oyoshi , Tomonori Yamaoka
IPC分类号： H01L21/20 , H01L21/205 , H01L21/265 , H01L21/30 , H01L21/84
CPC分类号： H01L21/3003 , H01L21/0242 , H01L21/02422 , H01L21/02532 , H01L21/0262 , H01L21/02667
摘要： Provided herein is a process for producing a polycrystalline semiconductor film at a low temperature. The process comprises the steps of depositing on a glass substrate by plasma CVD an amorphous silicon film containing the crystal phase as well as hydrogen, heating the film using a heater, thereby releasing hydrogen from the film, and growing the crystal phase by silicon ion implantation, thereby changing the amorphous silicon film into a polycrystalline silicon film containing crystal grains. The releasing of hydrogen from the amorphous silicon film permits the polycrystalline silicon film to be formed at a lower temperature than before without the growth of crystal phase being inhibited.
摘要翻译：本文提供了一种在低温下制造多晶半导体膜的方法。该方法包括以下步骤：通过等离子体CVD在玻璃衬底上沉积含有结晶相和氢的非晶硅膜，使用加热器加热膜，从而从膜中释放氢，并通过硅离子注入生长晶相从而将非晶硅膜变成含有晶粒的多晶硅膜。从非晶硅膜释放氢使得可以在比以前更低的温度下形成多晶硅膜，而不抑制结晶相的生长。

7. 发明授权

US08835276B2 Method for manufacturing semiconductor substrate 有权
标题翻译：半导体衬底的制造方法
公开(公告)号：US08835276B2
公开(公告)日：2014-09-16
申请号：US12964141
申请日：2010-12-09
申请人： Syouji Nogami , Tomonori Yamaoka , Shoichi Yamauchi , Nobuhiro Tsuji , Toshiyuki Morishita
发明人： Syouji Nogami , Tomonori Yamaoka , Shoichi Yamauchi , Nobuhiro Tsuji , Toshiyuki Morishita
IPC分类号： H01L21/76 , H01L23/544 , H01L29/06 , H01L29/66 , H01L21/02
CPC分类号： H01L21/30604 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L21/02664 , H01L21/308 , H01L23/544 , H01L29/0634 , H01L29/66712 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N+-type substrate. This trench is used to leave voids after the formation of an N−-type layer. Then, the voids formed in the N+-type substrate can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.
摘要翻译：提供了一种半导体衬底，其中形成了即使在通过外延膜的平坦化形成杂质扩散层之后也可以用于取向的对准标记。在N +型衬底的取向区域中形成沟槽。这种沟槽用于在形成N型层之后留下空隙。然后，可以使用形成在N +型衬底中的空隙作为对准标记。因此，可以使用这样的半导体衬底在制造半导体器件的后续步骤中提供对准。因此，能够精确地形成构成半导体装置的各个部件。

8. 发明申请

US20140213825A1 METHOD FOR PRODUCING 2-(ARYLOXYMETHYL) BENZALDEHYDE COMPOUND 有权
标题翻译： 2-（芳基甲基）苯甲醛化合物的制备方法
公开(公告)号：US20140213825A1
公开(公告)日：2014-07-31
申请号：US14128248
申请日：2012-06-27
申请人： Mitsunobu Kawamura , Masashi Takimota , Tomonori Yamaoka , Yoshio Onogawa
发明人： Mitsunobu Kawamura , Masashi Takimota , Tomonori Yamaoka , Yoshio Onogawa
IPC分类号： C07C45/64
CPC分类号： C07C45/64 , C07C45/43 , C07C47/575 , C07C47/55
摘要： A new process for producing a 2-(aryloxymethyl)benzaldehyde compound and the like are provided. More particularly, a process for producing a 2-(aryloxymethyl)benzaldehyde compound represented by formula (4) comprising step (A) of hydrolyzing a compound represented by the following formula (1); and step (B) of reacting a compound represented by formula (2) obtained in step (A) and a compound represented by formula (3) or a salt thereof is provided; in formulae, X1, X2 and X3 each represent independently a chlorine atom, a bromine atom or an iodine atom, Q1, Q2, Q3 and Q4 each represent independently a hydrogen atom or a halogen atom, and Ar represents a phenyl group optionally having a substituent).
摘要翻译：提供了一种新的2-（芳氧基甲基）苯甲醛化合物的制备方法。更具体地，涉及制备由式（4）表示的2-（芳氧基甲基）苯甲醛化合物的方法，其包括水解下式（1）表示的化合物的步骤（A）并且提供使步骤（A）中获得的式（2）表示的化合物与由式（3）表示的化合物或其盐反应的步骤（B）在式中，X 1，X 2和X 3各自独立地表示氯原子，溴原子或碘原子，Q 1，Q 2，Q 3和Q 4各自独立地表示氢原子或卤素原子，Ar表示任选具有取代基）。

9. 发明申请

US20090273102A1 Semiconductor Substrate and Method for Manufacturing the Same 审中-公开
标题翻译：半导体基板及其制造方法
公开(公告)号：US20090273102A1
公开(公告)日：2009-11-05
申请号：US12089497
申请日：2006-10-05
申请人： Syouji Nogami , Tomonori Yamaoka , Shoichi Yamauchi , Nobuhiro Tsuji , Toshiyuki Morishita
发明人： Syouji Nogami , Tomonori Yamaoka , Shoichi Yamauchi , Nobuhiro Tsuji , Toshiyuki Morishita
IPC分类号： H01L23/544 , H01L21/308
CPC分类号： H01L21/30604 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L21/02664 , H01L21/308 , H01L23/544 , H01L29/0634 , H01L29/66712 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , Y10S438/975 , H01L2924/00
摘要： A semiconductor substrate is provided in which an alignment mark is formed that can be used for an aligment even after the formation of an impurity diffused layer by the planarization of an epitaxial film.A trench 11 is formed in an alignment region of an N+-type substrate 1. This trench 11 is used to leave voids 3 after the formation of an N−-type layer 2. Then, the voids 3 formed in the N+-type substrate 1 can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.
摘要翻译：提供了一种半导体衬底，其中形成了即使在通过外延膜的平坦化形成杂质扩散层之后也可用于分配的对准标记。在N +型衬底1的取向区域中形成沟槽11.在形成N型层2之后，该沟槽11用于留下空隙3.然后，形成在N +型衬底中的空隙3 1可用作对准标记。因此，可以使用这样的半导体衬底在制造半导体器件的后续步骤中提供对准。因此，能够精确地形成构成半导体装置的各个部件。

10. 发明授权

US06461447B1 Substrate for epitaxial growth 失效
标题翻译：用于外延生长的基板
公开(公告)号：US06461447B1
公开(公告)日：2002-10-08
申请号：US09607626
申请日：2000-06-30
申请人： Hiroshi Shinyashiki , Hiroshi Koya , Tomonori Yamaoka , Kazuhito Matsukawa , Yasuhiro Kimura , Hidekazu Yamamoto
发明人： Hiroshi Shinyashiki , Hiroshi Koya , Tomonori Yamaoka , Kazuhito Matsukawa , Yasuhiro Kimura , Hidekazu Yamamoto
IPC分类号： H01L2900
CPC分类号： C30B29/06 , C30B15/203
摘要： A substrate having a surface on which silicon is epitaxially grown; wherein the substrate is cut from an oxygen induced stacking fault generation area of a single crystal silicon rod grown by the Czochralski method.
摘要翻译：具有外延生长硅的表面的衬底; 其特征在于，所述基板由通过切克劳斯基法（Czochralski）法生长的单晶硅棒的氧诱导堆垛层错产生区切割。

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