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    • 1. 发明申请
    • White Light Emitting Device and Method for Manufacturing the Same
    • 白光发射装置及其制造方法
    • US20080042150A1
    • 2008-02-21
    • US11629999
    • 2005-06-22
    • Tomoji Yamaguchi
    • Tomoji Yamaguchi
    • H01L33/00
    • H01L33/20H01L24/97H01L33/32H01L33/501H01L2224/05573H01L2224/11H01L2224/73204H01L2224/92125
    • There are provided a white light emitting device of high luminous efficiency prevented from luminance deterioration even in large electric current range, and a method for manufacturing the same with high production yield. The white light emitting device (1) is composed of a blue LED element (4) and an oxide layer (8) containing a fluorescent material which is integrated with the blue LED element (4). In the blue LED element (4), a p-side electrode (11) is formed on a surface of a p-type layer of epitaxial layers (6) formed by laminating GaN based compound semiconductor layers on a surface of a light transmitting crystal substrate (3), and an n-side electrode (10) is formed on a bottom surface of a recessed portion (9) which is an n-type layer exposed by selectively etching a part of the p-type layer and the light emitting layer. The oxide layer (8) is formed by sintering a YAG fluorescent material and a glass binder containing mainly SiO2, B2O3 and PbO for binding the fluorescent material. The white light emitting device emits white light to the out side by converting blue light emitted from the blue LED element in the oxide layer (8).
    • 提供了即使在大的电流范围也能够防止亮度劣化的高发光效率的白色发光元件及其制造方法。 白色发光器件(1)由蓝色LED元件(4)和含有与蓝色LED元件(4)集成的荧光材料的氧化物层(8)组成。 在蓝色LED元件(4)中,p型电极(11)形成在通过在透光晶体的表面上层叠GaN基化合物半导体层而形成的外延层(6)的p型层的表面上 基板(3)和n侧电极(10)形成在通过选择性蚀刻p型层的一部分而暴露的n型层的凹部(9)的底面上,发光 层。 氧化物层(8)通过烧结YAG荧光材料和主要含有SiO 2,B 2 O 3 3和PbO的玻璃粘合剂形成 用于粘合荧光材料。 白色发光装置通过转换从氧化物层(8)中的蓝色LED元件发出的蓝色光向外侧发射白色光。