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    • 1. 发明申请
    • Flaw Detector and Flaw Detection Method For Silicon Layer of Wafer
    • 瑕疵检测器和硅片硅片​​探伤方法
    • US20090051358A1
    • 2009-02-26
    • US12087993
    • 2006-09-04
    • Tomohisa ShirasakaTetsuo SakakiTsuneo Kobayashi
    • Tomohisa ShirasakaTetsuo SakakiTsuneo Kobayashi
    • G01N27/90
    • G01N27/902G01N27/9026
    • The present invention is achieved for the purpose of easily detecting a crack or flaw existing in the silicon layer of a wafer in a short period of time. The flaw detector thus provided includes a coil sensor placed at a predetermined distance from the surface of the silicon layer; a radiofrequency applier for applying a radiofrequency to the coil sensor; a scanner for relatively moving the silicon layer and the coil sensor with a constant distance between the surface of the silicon layer and the coil sensor; and a crack detector for detecting a crack or flaw existing in the silicon layer by detecting the change of a signal provided from the coil sensor or the change in the radiofrequency applied by the radiofrequency applier. The frequency of the radiofrequency applied by the radiofrequency applier may be set between 5 MHz and 200 MHz. This enables a flaw detection for a silicon layer which has been considered to be impossible. In the case where the silicon to be flaw-detected is low resistivity silicon, the frequency applied may be set between 0.5 MHz and 200 MHz.
    • 本发明是为了容易地在短时间内检测存在于晶片的硅层中的裂纹或缺陷的目的而实现的。 由此提供的缺陷检测器包括:距离硅层表面预定距离放置的线圈传感器; 用于向线圈传感器施加射频的射频施加器; 用于使硅层和线圈传感器在硅层的表面与线圈传感器之间具有恒定距离的相对移动的扫描器; 以及裂纹检测器,用于通过检测从线圈传感器提供的信号的变化或由射频施加器施加的射频的变化来检测存在于硅层中的裂纹或缺陷。 由射频施加器施加的射频的频率可以设置在5MHz和200MHz之间。 这使得已经被认为是不可能的硅层的探伤。 在要被探伤的硅是低电阻率硅的情况下,施加的频率可以设置在0.5MHz和200MHz之间。