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1. 发明专利

JP2005064412A Block hybrid light emitting device and illumination light source using the same 审中-公开
标题翻译：块状混合发光器件和照明光源使用相同
公开(公告)号：JP2005064412A
公开(公告)日：2005-03-10
申请号：JP2003295970
申请日：2003-08-20
申请人： Tomio Inoue , 井上登美男
发明人： INOUE TOMIO
IPC分类号： F21V29/00 , F21S2/00 , F21S8/04 , F21V29/02 , F21Y101/02 , H01L33/08 , H01L33/32 , H01L33/42 , H01L33/50 , H01L33/62 , H01L33/64 , H01L33/00
CPC分类号： H01L2224/16225 , H01L2224/45144 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To improve the light emitting efficiency of a block hybrid light emitting device (LED) that mounts to one submount element a block light emitting device having a plurality of light emitting devices, and to provide an illumination light source for ac driving that uses the same.
SOLUTION: This block hybrid light emitting device mounts and electrically connects a block white light emitting device 22 to a submount device 13 having an A1N ceramic substrate 9, wherein by the synergy of the Ag electrode film effect of a p-side electrode 6a, the grooving effect of a sapphire 4, the light absorption-less effect and heat dissipation effect of an A1N ceramic substrate 9, the heat dissipation effect of a bump electrode 8a under an anode electrode and the like its light emitting efficiency is improved by 20%×20%×20%+α, i.e., 80% or more. Further, a block hybrid LED can easily compose a light source for illumination that is driven by ac 100V.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：解决的问题为了提高将具有多个发光装置的块发光装置安装在一个基板上的块式混合发光装置（LED）的发光效率，并提供照明光源对于使用相同的交流驾驶。解决方案：该块混合发光器件将块状白色发光器件22安装并电连接到具有A1N陶瓷衬底9的基座装置13，其中通过p侧电极的Ag电极膜效应的协同作用如图6a所示，蓝宝石4的开槽效果，A1N陶瓷基板9的无光吸收效应和散热效果，阳极电极下方的凸块电极8a的散热效果等，其发光效率得到改善 20％×20％×20％+α，即80％以上。此外，块式混合LED可以容易地组成由ac 100V驱动的用于照明的光源。版权所有（C）2005，JPO＆NCIPI

2. 发明专利

JP2003064046A New contrast medium, precursor of the same and method of production of the same 审中-公开
标题翻译：新的对比介质，其前身及其生产方法
公开(公告)号：JP2003064046A
公开(公告)日：2003-03-05
申请号：JP2002161471
申请日：2002-06-03
申请人： Tomio Inoue , Sumitomo Heavy Ind Ltd , Katsumi Tomiyoshi , Univ Of Texas Md Anderson Cancer Center , ザユニバーシティーオブテキサス、エムディーアンダーソンキャンサーセンター , 登美夫井上 , 住友重機械工業株式会社 , 勝美冨吉
发明人： TANAKA AKIRA , INOUE TOMIO , TOMIYOSHI KATSUMI , YANG DAVID J , KIM E EDMUND
IPC分类号： A61K51/00 , A61K49/00 , A61K49/06 , A61M36/14 , C07B59/00 , C07C227/20 , C07C229/22 , C07C229/36 , C07C269/04 , C07C271/22 , C07C303/28 , C07C309/73 , C07D209/18 , C07D209/20
CPC分类号： C07D209/20 , Y02P20/55
摘要： PROBLEM TO BE SOLVED: To provide a contrast medium for diagnosis of cancer and abscess and to provide a method for quickly and stably producing the same.
SOLUTION: This contrast medium is a compound expressed by formula (I) and (II) (R
1 is a single bond, phenyl group or the like, R
2 is a 1-7C alkyl, RE is
18 F or the like, PG
1 is a carboxyl protecting group and PG
2 is an amino protecting group.), and the invention provides the method of producing the same and method of use for the same.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供用于诊断癌症和脓肿的造影剂，并提供一种快速且稳定地制造该方法。溶液：该造影剂为式（I）和（II）表示的化合物（R1为单键，苯基等，R2为1-7C烷基，RE为18F等，PG1 是羧基保护基，PG 2是氨基保护基），本发明提供其制备方法及其使用方法。

3. 发明专利

JP2005072527A Light emitting element and its manufacturing method 审中-公开
标题翻译：发光元件及其制造方法
公开(公告)号：JP2005072527A
公开(公告)日：2005-03-17
申请号：JP2003304018
申请日：2003-08-28
申请人： Tomio Inoue , 井上登美男
发明人： INOUE TOMIO , MINAMIGUCHI MAKOTO
IPC分类号： H01L33/12 , H01L33/32 , H01L33/50 , H01L33/00
CPC分类号： H01L2224/14 , H01L2924/181 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide an ultraviolet LED element with high emission efficiency which comprises a GaN based compound semiconductor thin film layer wherein a GaN layer which absorbs ultraviolet light is removed, and its manufacturing method for manufacturing with high yield. SOLUTION: The ultraviolet LED element 1 has the epitaxial layer 8 wherein a GaN based compound semiconductor thin film layer which removes the two GaN layers and emits ultraviolet light is laminated under a silicate glass layer 9 which is a light transparent oxide layer, and an n-side electrode 12 and a p-side electrode 11 formed in an electrode surface 15 at the epitaxial layer side, and emits ultraviolet light emitted from the epitaxial layer 8 to an outside through the silicate glass layer 9. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有高发射效率的紫外LED元件，其包括其中去除吸收紫外线的GaN层的GaN基化合物半导体薄膜层及其以高产率制造的制造方法。解决方案：紫外线LED元件1具有外延层8，其中去除两个GaN层并发出紫外光的GaN基化合物半导体薄膜层层叠在作为透光氧化物层的硅酸盐玻璃层9的下面，以及形成在外延层侧的电极表面15中的n侧电极12和p侧电极11，并且通过硅酸盐玻璃层9将从外延层8发射的紫外光发射到外部。（C）2005，JPO＆NCIPI

4. 发明授权

US07942550B2 Light emitting device and backlight unit including the same 失效
标题翻译：发光装置和包括其的背光单元
公开(公告)号：US07942550B2
公开(公告)日：2011-05-17
申请号：US12276250
申请日：2008-11-21
申请人： Tomio Inoue , Yu Dong Kim , Jae Woo Cho , Ok Hee Shin
发明人： Tomio Inoue , Yu Dong Kim , Jae Woo Cho , Ok Hee Shin
IPC分类号： F21S4/00 , F21V21/00
CPC分类号： H01L33/486 , G02F1/133615 , H01L33/54 , H01L2224/45139 , H01L2224/48091 , H01L2224/48465 , H01L2224/73265 , H01L2924/00011 , H01L2924/1815 , H01L2924/3025 , Y10S362/80 , H01L2924/00014 , H01L2924/00 , H01L2924/01049
摘要： There are provided a light emitting device and a backlight unit including the same. The light emitting device includes a package body having opposing first and second main surfaces and side surfaces, and formed of a curable resin; first and second external terminal blocks opposing each other and each having first and second surfaces formed on the first and second main surfaces and side surfaces, the first and second external terminal blocks each including a connecting part having a bonding portion located inside the package body and a terminal portion connected to the bonding portion and exposed outward; and an LED chip including an electrode forming surface where first and second electrodes are formed and a light emitting surface located opposite to the electrode forming surface, the LED chip having the first and second electrodes electrically connected to the bonding portions of the first and second external terminal blocks, respectively.
摘要翻译：提供了一种发光器件和包括该发光器件的背光单元。发光器件包括：具有相对的第一和第二主表面和侧表面的封装体，并由可固化树脂形成; 第一和第二外部端子块彼此相对并且每个具有形成在第一和第二主表面和侧表面上的第一和第二表面，每个包括具有位于封装体内部的接合部分的连接部分的第一和第二外部接线端子，连接到所述接合部并向外露出的端子部; 以及包括形成第一和第二电极的电极形成表面和与电极形成表面相对的发光表面的LED芯片，所述LED芯片具有电连接到第一和第二外部的接合部分的第一和第二电极端子块。

5. 发明申请

US20080290359A1 Light emitting device and manufacturing method of the same 审中-公开
标题翻译：发光器件及其制造方法相同
公开(公告)号：US20080290359A1
公开(公告)日：2008-11-27
申请号：US12081888
申请日：2008-04-23
申请人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
发明人： Tomio Inoue , Tsuyoshi Tsutsui , Jae Joon Yoon , Ok Hee Shin
IPC分类号： H01L33/00
CPC分类号： H01L33/52 , B29C39/42 , H01L24/97 , H01L33/0095 , H01L33/483 , H01L2224/48091 , H01L2224/48465 , H01L2924/12035 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： There is provided a light emitting device including: a package body having first and second circumferential surfaces and a plurality of side surfaces formed therebetween, the package body defined into first and second level areas including the first and second circumferential surfaces, respectively; first and second external terminal blocks each having an electrical contact part; an LED chip disposed between the first and second external terminal blocks in the first level area and having an electrode surface where first and second electrodes are formed; and wires electrically connected to first and second electrodes of the LED chip to the electrical contact parts of the first and second external terminal blocks, respectively.
摘要翻译：提供了一种发光器件，包括：封装体，其具有第一和第二周向表面和形成在其间的多个侧表面，所述封装体分别限定在包括第一和第二周向表面的第一和第二水平区域中; 每个具有电接触部分的第一和第二外部接线端子; LED芯片，设置在第一电平区域中的第一和第二外部端子块之间，并且具有形成第一和第二电极的电极表面; 以及分别与LED芯片的第一和第二电极电连接到第一和第二外部端子块的电接触部分的导线。

6. 外观设计

USD544847S1 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：USD544847S1
公开(公告)日：2007-06-19
申请号：US29228112
申请日：2005-04-19
申请人： Tomio Inoue
设计人： Tomio Inoue

7. 外观设计

USD536308S1 Light emitting diode 有权
公开(公告)号：USD536308S1
公开(公告)日：2007-02-06
申请号：US29228152
申请日：2005-04-19
申请人： Tomio Inoue
设计人： Tomio Inoue

8. 外观设计

USD526971S1 Light emitting diode 有权
公开(公告)号：USD526971S1
公开(公告)日：2006-08-22
申请号：US29227032
申请日：2005-04-06
申请人： Tomio Inoue
设计人： Tomio Inoue

9. 外观设计

USD522467S1 Light emitting diode 有权
公开(公告)号：USD522467S1
公开(公告)日：2006-06-06
申请号：US29228107
申请日：2005-04-19
申请人： Tomio Inoue
设计人： Tomio Inoue

10. 发明授权

US06597019B2 Semiconductor light-emitting device comprising an electrostatic protection element 有权
标题翻译：包括静电保护元件的半导体发光器件
公开(公告)号：US06597019B2
公开(公告)日：2003-07-22
申请号：US09984148
申请日：2001-10-29
申请人： Tomio Inoue , Kenichi Sanada , Kenichi Koya , Yasuhiko Fukuda
发明人： Tomio Inoue , Kenichi Sanada , Kenichi Koya , Yasuhiko Fukuda
IPC分类号： H01L3300
CPC分类号： H01L33/40 , H01L25/167 , H01L33/32 , H01L33/38 , H01L33/62 , H01L2224/0401 , H01L2224/06102 , H01L2224/13144 , H01L2224/16 , H01L2224/32245 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2224/73204 , H01L2224/73265 , H01L2924/01004 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01028 , H01L2924/01039 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/181 , H01L2924/19041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A GaN-based LED element 1 having a double heterostructure, which includes a GaN layer and the like and is formed on a sapphire substrate, is mounted face-down on a Si diode element 2 formed in a silicon substrate. Electrical connections are provided via Au microbumps 11 and 12 between a p-side electrode 5 of the GaN-based LED element 1 and an n-side electrode 8 of the Si diode element 2 and between an n-side electrode 6 of the GaN-based LED element 1 and a p-side electrode 7 of the Si diode element 2. The Si diode element 2 functions to protect the LED element 1 from an electrostatic destruction. The Si diode element 2 has a backside electrode 9 connected to a leadframe 13a. The p-side electrode 7 of the Si diode element 2 has a bonding pad portion 10 connected to a leadframe 13b via an Au wire 17.
摘要翻译：在蓝宝石衬底上形成有包括GaN层等的双异质结构的GaN基LED元件1面朝下安装在形成于硅衬底中的Si二极管元件2上。在GaN基LED元件1的p侧电极5和Si二极管元件2的n侧电极8之间以及在GaN基LED元件1的n侧电极6之间的Au微胶片11和12之间，基于硅的LED元件1和Si二极管元件2的p侧电极7.Si二极管元件2用于保护LED元件1免受静电破坏。 Si二极管元件2具有连接到引线框13a的背面电极9。 Si二极管元件2的p侧电极7具有通过Au线17与引线框架13b连接的接合焊盘部10。

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