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1. 发明授权

US07943109B2 Process for the production of Si by reduction of SiCl4 with liquid Zn 失效
标题翻译：通过用液体Zn还原SiCl4来生产Si的方法
公开(公告)号：US07943109B2
公开(公告)日：2011-05-17
申请号：US11909353
申请日：2006-03-24
申请人： Eric Robert , Tjakko Zijlema
发明人： Eric Robert , Tjakko Zijlema
IPC分类号： C01B33/02
CPC分类号： H01L31/1804 , C01B33/033 , C01B33/037 , Y02E10/547 , Y02P70/521
摘要： The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiCU is converted to Si metal by contacting gaseous SiCU with liquid Zn, thereby obtaining a Si-bearing alloy and Zn-chloride, which is separated. The Si-bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiCU towards the end product, as the only reactant is Zn, which can be obtained in very high purity grades and continuously recycled.
摘要翻译：本发明涉及制造高纯度硅作为生产例如氧化硅的基础材料。晶体硅太阳能电池。通过使气态SiCU与液态Zn接触将SiCU转化为Si金属，从而得到分离的含Si的合金和Zn-氯化物。然后在高于Zn沸点的温度下纯化含Si的合金。该方法不需要复杂的技术，并且保留了SiCU对最终产物的高纯度，因为唯一的反应物是Zn，其可以以非常高的纯度等级获得并且连续再循环。

2. 发明授权

US07682593B2 Process for the production of Ge by reduction of GeCl4 with liquid metal 有权
标题翻译：通过用液态金属还原GeCl4来生产Ge的方法
公开(公告)号：US07682593B2
公开(公告)日：2010-03-23
申请号：US11663795
申请日：2005-09-16
申请人： Eric Robert , Tjakko Zijlema
发明人： Eric Robert , Tjakko Zijlema
IPC分类号： C01G19/08 , C22B25/00 , C22B41/00 , C01D3/14
CPC分类号： C22B41/00 , C22B5/04 , Y02P10/212
摘要： The invention relates to the manufacture of high purity germanium for the manufacture of e.g. infra red optics, radiation detectors and electronic devices. GeCl4 is converted to Ge metal by contacting gaseous GeCl4 with a liquid metal M containing one of Zn, Na and Mg, thereby obtaining a Ge-bearing alloy and a metal M chloride, which is removed by evaporation or skimming. The Ge-bearing alloy is then purified at a temperature above the boiling point of metal M. This process does not require complicated technologies and preserves the high purity of the GeCl4 in the final Ge metal, as the only reactant is metal M, which can be obtained in very high purity grades and continuously recycled.
摘要翻译：本发明涉及用于制造例如高纯度锗的制造方法。红外光学，辐射探测器和电子设备。通过使气体GeCl4与含有Zn，Na和Mg中的一种的液态金属M接触，将GeCl 4转化为Ge金属，由此得到含Ge的合金和金属氯化物，通过蒸发或撇去除去。然后在高于金属M沸点的温度下纯化含Ge合金。该方法不需要复杂的技术，并且保留了GeCl4在最终的Ge金属中的高纯度，因为唯一的反应物是金属M，它可以可以获得非常高的纯度等级并持续回收。

3. 发明申请

US20100024882A1 Process for the Production of Si by Reduction of SiHCl3 with Liquid Zn 审中-公开
标题翻译：用液态锌还原SiHCl3生产Si的方法
公开(公告)号：US20100024882A1
公开(公告)日：2010-02-04
申请号：US12441442
申请日：2007-09-18
申请人： Eric Robert , Tjakko Zijlema
发明人： Eric Robert , Tjakko Zijlema
IPC分类号： H01L31/00 , C01B33/03 , C01B33/107
CPC分类号： C01B33/033 , C01B33/037
摘要： The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiHCl3 is converted to Si metal by contacting gaseous SiHCl3 with liquid Zn, thereby obtaining a Si-bearing alloy, H2 and ZnCl2, which are separated. The Si-bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiHCl3 towards the end product. The only other reactant is Zn, which can be obtained in very high purity grades, and which can be recycled after electrolysis of the Zn-chloride.
摘要翻译：本发明涉及制造高纯度硅作为生产例如氧化硅的基础材料。晶体硅太阳能电池。 SiHCl3通过使气态SiHCl3与液态Zn接触而转化为Si金属，从而获得分离的含Si的合金H 2和ZnCl 2。然后在高于Zn沸点的温度下纯化含Si的合金。该方法不需要复杂的技术，并保持了SiHCl3向最终产品的高纯度。唯一的其他反应物是Zn，其可以以非常高纯度的等级获得，并且可以在电镀氯化锌之后再循环。

4. 发明申请

US20140335270A1 Production of Zinc Oxide Coated Powders 有权
标题翻译：生产氧化锌涂层粉末
公开(公告)号：US20140335270A1
公开(公告)日：2014-11-13
申请号：US14363916
申请日：2012-12-14
申请人： Stijn Kusters , Tjakko Zijlema , Steven Neyens
发明人： Stijn Kusters , Tjakko Zijlema , Steven Neyens
IPC分类号： B05D7/24
CPC分类号： B05D7/24 , C01P2004/50 , C01P2004/61 , C01P2006/12 , C09C1/0081 , C09C1/024
摘要： This disclosure concerns the production of ZnO (zinc oxide) coated particles for use in rubber as a substitute for bulk ZnO particles. Compared to bulk oxide, oxide coated particles offer the advantage of a higher specific surface per mass unit of ZnO. This implies both ecological and economical benefits. An enhanced process is presented for the synthesis of aggregate particles, comprising a core of CaCO3, which is at least partially coated with ZnO, comprising the steps of: heating a metallic Zn bath, thereby evaporating Zn and forming a Zn-vapor atmosphere; injecting CaCO3 particles as core compound in the Zn-vapor atmosphere; injecting air in the Zn-vapor atmosphere in an amount in excess of the stoechiometric need for the oxidation of the Zn vapor to ZnO. This process is clean and sustainable, producing no unnecessary phases.
摘要翻译：本公开涉及用于橡胶中的ZnO（氧化锌）涂覆颗粒的生产作为体积ZnO颗粒的替代物。与体氧化物相比，氧化物涂覆的颗粒提供了每质量单位ZnO具有更高比表面积的优点。这意味着生态和经济效益。提出了一种用于合成聚集体颗粒的增强方法，其包括至少部分地涂覆有ZnO的CaCO 3芯，其包括以下步骤：加热金属Zn浴，从而蒸发Zn并形成Zn蒸气气氛; 在Zn蒸气气氛中注入CaCO3颗粒作为核心化合物; 在Zn蒸气气氛中注入空气，其量超过Zn蒸汽氧化成ZnO的经济需要。这个过程是干净和可持续的，不会产生不必要的阶段。

5. 发明申请

US20080311027A1 Process for the Production of Ge by Reduction of Gecl4 With Liquid Metal 有权
标题翻译：用液态金属还原Gecl4生产Ge的方法
公开(公告)号：US20080311027A1
公开(公告)日：2008-12-18
申请号：US11663795
申请日：2005-09-16
申请人： Eric Robert , Tjakko Zijlema
发明人： Eric Robert , Tjakko Zijlema
IPC分类号： C01G17/04 , C22B5/00 , C25C3/00
CPC分类号： C22B41/00 , C22B5/04 , Y02P10/212
摘要： The invention relates to the manufacture of high purity germanium for the manufacture of e.g. infra red optics, radiation detectors and electronic devices. GeCl4 is converted to Ge metal by contacting gaseous GeCl4 with a liquid metal M containing one of Zn, Na and Mg, thereby obtaining a Ge-bearing alloy and a metal M chloride, which is removed by evaporation or skimming. The Ge-bearing alloy is then purified at a temperature above the boiling point of metal M. This process does not require complicated technologies and preserves the high purity of the GeCl4 in the final Ge metal, as the only reactant is metal M, which can be obtained in very high purity grades and continuously recycled.
摘要翻译：本发明涉及用于制造例如高纯度锗的制造方法。红外光学，辐射探测器和电子设备。通过使气体GeCl4与含有Zn，Na和Mg中的一种的液态金属M接触，将GeCl 4转化为Ge金属，由此得到含Ge的合金和金属氯化物，通过蒸发或撇去除去。然后在高于金属M沸点的温度下纯化含Ge合金。该方法不需要复杂的技术，并且保留了GeCl4在最终的Ge金属中的高纯度，因为唯一的反应物是金属M，它可以可以获得非常高的纯度等级并持续回收。

6. 发明授权

US09216436B2 Production of zinc oxide coated powders 有权
标题翻译：生产氧化锌涂层粉末
公开(公告)号：US09216436B2
公开(公告)日：2015-12-22
申请号：US14363916
申请日：2012-12-14
申请人： Stijn Kusters , Tjakko Zijlema , Steven Neyens
发明人： Stijn Kusters , Tjakko Zijlema , Steven Neyens
IPC分类号： B05D7/24 , C09C1/00 , C09C1/02
CPC分类号： B05D7/24 , C01P2004/50 , C01P2004/61 , C01P2006/12 , C09C1/0081 , C09C1/024
摘要： This disclosure concerns the production of ZnO (zinc oxide) coated particles for use in rubber as a substitute for bulk ZnO particles. Compared to bulk oxide, oxide coated particles offer the advantage of a higher specific surface per mass unit of ZnO. This implies both ecological and economical benefits. An enhanced process is presented for the synthesis of aggregate particles, comprising a core of CaCO3, which is at least partially coated with ZnO, comprising the steps of: heating a metallic Zn bath, thereby evaporating Zn and forming a Zn-vapor atmosphere; injecting CaCO3 particles as core compound in the Zn-vapor atmosphere; injecting air in the Zn-vapor atmosphere in an amount in excess of the stoechiometric need for the oxidation of the Zn vapor to ZnO. This process is clean and sustainable, producing no unnecessary phases.
摘要翻译：本公开涉及用于橡胶中的ZnO（氧化锌）涂覆颗粒的生产作为体积ZnO颗粒的替代物。与体氧化物相比，氧化物涂覆的颗粒提供了每质量单位ZnO具有更高比表面积的优点。这意味着生态和经济效益。提出了一种用于合成聚集体颗粒的增强方法，其包括至少部分地涂覆有ZnO的CaCO 3芯，其包括以下步骤：加热金属Zn浴，从而蒸发Zn并形成Zn蒸气气氛; 在Zn蒸气气氛中注入CaCO3颗粒作为核心化合物; 在Zn蒸气气氛中注入空气，其量超过Zn蒸汽氧化成ZnO的经济需要。这个过程是干净和可持续的，不会产生不必要的阶段。

7. 发明申请

US20080181836A1 Process For The Production Of Si By Reduction Of Sici4 With Liquid Zn 失效
标题翻译：通过用液体Zn还原Sici4来生产Si的方法
公开(公告)号：US20080181836A1
公开(公告)日：2008-07-31
申请号：US11909353
申请日：2006-03-24
申请人： Eric Robert , Tjakko Zijlema
发明人： Eric Robert , Tjakko Zijlema
IPC分类号： C01B33/023
CPC分类号： H01L31/1804 , C01B33/033 , C01B33/037 , Y02E10/547 , Y02P70/521
摘要： The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiCU is converted to Si metal by contacting gaseous SiCU with liquid Zn, thereby obtaining a Si-bearing alloy and Zn-chloride, which is separated. The Si-bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiCU towards the end product, as the only reactant is Zn, which can be obtained in very high purity grades and continuously recycled.
摘要翻译：本发明涉及制造高纯度硅作为生产例如氧化硅的基础材料。晶体硅太阳能电池。通过使气态SiCU与液态Zn接触将SiCU转化为Si金属，从而得到分离的含Si的合金和Zn-氯化物。然后在高于Zn沸点的温度下纯化含Si的合金。该方法不需要复杂的技术，并且保留了SiCU对最终产物的高纯度，因为唯一的反应物是Zn，其可以以非常高的纯度等级获得并且连续再循环。

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