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    • 2. 发明授权
    • TiC MR-head magnetic shield dummy shield spark gap
    • TiC MR磁头磁屏蔽虚拟屏蔽火花隙
    • US6081409A
    • 2000-06-27
    • US959406
    • 1997-10-28
    • Timothy Scott HughbanksNeil Leslie RobertsonSteven Howard VoldmanAlbert John Wallash
    • Timothy Scott HughbanksNeil Leslie RobertsonSteven Howard VoldmanAlbert John Wallash
    • G11B5/10G11B5/11G11B5/31G11B5/39G11B5/40G11B5/596G11B5/127
    • G11B5/3903G11B5/11G11B5/3912G11B5/40G11B5/59683G11B5/3103Y10T29/49032
    • A magneto-resistive read head having a "parasitic shield" provides an alternative path for currents associated with sparkovers, thus preventing such currents from damaging the read head. The parasitic shield is provided in close proximity to a conventional magnetic shield. The electrical potential of parasitic shield is held essentially equal to the electrical potential of the sensor element. If charges accumulate on the conventional shield, current will flow to the parasitic shield at a lower potential than would be required for current to flow between the conventional shield and the sensor element. Alternatively, conductive spark gap devices are electrically coupled to sensor element leads and to each magnetic shield. Each spark gap device is brought within very close proximity of the substrate to provide an alternative path for charge that builds up between the sensor element and the substrate to be discharged. The ends of the spark gaps that are brought into close proximity of the substrate are preferably configured with high electric field density inducing structures which reduce the voltage required to cause a sparkover between the spark gap device and the substrate.
    • 具有“寄生屏蔽”的磁阻式读取头提供了与火花放电相关的电流的替代路径,从而防止这种电流损坏读取头。 寄生屏蔽件靠近传统的磁屏蔽设置。 寄生屏蔽的电位基本上等于传感器元件的电位。 如果电容积累在常规屏蔽上,则电流将以比传统屏蔽和传感器元件之间的电流流动所需的电位更低的电流流向寄生屏蔽。 或者,导电火花隙装置电耦合到传感器元件引线和每个磁屏蔽。 每个火花隙装置被带到非常靠近基板的位置,以提供在传感器元件和待排出的基板之间建立的用于充电的替代路径。 靠近基板的火花隙的端部优选地配置有高电场密度诱导结构,其降低在火花隙装置和基板之间引起火花放电所需的电压。
    • 3. 发明授权
    • Electrostatic discharge protection system for MR heads
    • MR磁头静电放电保护系统
    • US5710682A
    • 1998-01-20
    • US799259
    • 1997-02-13
    • Satya P. AryaTimothy Scott HughbanksSteven Howard VoldmanAlbert John Wallash
    • Satya P. AryaTimothy Scott HughbanksSteven Howard VoldmanAlbert John Wallash
    • G11B5/40G11B5/48G11B5/60G11B19/02G11B21/16
    • G11B5/4853G11B5/40G11B5/4886G11B19/02G11B5/6011
    • An MR head receives ESD protection from a mechanism that automatically and releasably shorts the MR head whenever a suspension assembly on which the head is mounted is not installed in an HDA. The suspension assembly includes a flexure underlying a load beam, which is connected to an actuator arm. The MR head is mounted to a distal end of the flexure, leads from components of the MR head being brought out in the form of MR wire leads running along the load beam and the support arm to a nearby terminal connecting side tab. The conductors are separated and exposed at a designated point along the flexure to provide a contact region. A shorting bar, which comprises an electrically conductive member attached to the actuator arm, automatically connects the MR wire leads at the contact region when absence of support for the MR head permits the load beam to bend sufficiently toward the shorting bar. Thus, when the assembly is removed from installation in an HDA, the flexure is permitted to move toward the shorting bar, bringing the contact region and the shorting bar in electrical contact to short the MR wired leads and thereby disable the MR sensor. When the assembly is installed in an HDA, the MR head is supported by an air bearing or the disk itself, depending upon whether the disk is rotating or stopped, respectively. In either case, the load beam is not permitted to droop and the shorting bar cannot contact the conductors, thus activating the MR sensor. Temporary ESD protection mechanisms are also provided, these being removable prior to operation of the HDA by breaking and removing various temporary shorting mechanisms.
    • 每当安装有头部的悬挂组件未安装在HDA中时,MR磁头可以从机构自动和可释放地短路MR头部获得ESD保护。 悬架组件包括连接到致动器臂的负载梁下方的挠曲件。 MR头被安装到挠曲件的远端,从MR头的部件引出的MR导线沿着负载梁和支撑臂延伸到附近的端子连接侧突出部的形式被引出。 导体沿着挠曲件在指定点处分离并暴露以提供接触区域。 包括连接到致动器臂的导电构件的短路棒在没有用于MR头的支撑的情况下在接触区域处自动连接MR线引线,允许负载梁朝向短路棒充分弯曲。 因此,当组件从HDA中的安装中移除时,允许挠曲件朝向短路棒移动,使接触区域和短路棒电接触以缩短MR有线引线,从而禁用MR传感器。 当组件安装在HDA中时,MR磁头由空气轴承或磁盘本身支撑,这取决于磁盘是分别旋转还是停止。 在任一情况下,负载梁不允许下垂,并且短路棒不能接触导体,从而启动MR传感器。 还提供了临时ESD保护机制,它们在HDA操作之前可以通过断开和移除各种临时短路机构来拆卸。
    • 4. 发明授权
    • Method of making TiC MR-head magnetic shield dummy shield spark gap
    • 制造TiC MR磁头屏蔽虚拟屏蔽火花间隙的方法
    • US06288880B1
    • 2001-09-11
    • US09433900
    • 1999-11-04
    • Timothy Scott HughbanksNeil Leslie RobertsonSteven Howard VoldmanAlbert John Wallash
    • Timothy Scott HughbanksNeil Leslie RobertsonSteven Howard VoldmanAlbert John Wallash
    • G11B5127
    • G11B5/3903G11B5/11G11B5/3103G11B5/3912G11B5/40G11B5/59683Y10T29/49032
    • A magneto-resistive read head having a “parasitic shield” provides an alternative path for currents associated with sparkovers, thus preventing such currents from damaging the read head. The parasitic shield is provided in close proximity to a conventional magnetic shield. The electrical potential of parasitic shield is held essentially equal to the electrical potential of the sensor element. If charges accumulate on the conventional shield, current will flow to the parasitic shield at a lower potential than would be required for current to flow between the conventional shield and the sensor element. Alternatively, conductive spark gap devices are electrically coupled to sensor element leads and to each magnetic shield. Each spark gap device is brought within very close proximity of the substrate to provide an alternative path for charge that builds up between the sensor element and the substrate to be discharged. The ends of the spark gaps that are brought into close proximity of the substrate are preferably configured with high electric field density inducing structures which reduce the voltage required to cause a sparkover between the spark gap device and the substrate.
    • 具有“寄生屏蔽”的磁阻式读取头提供了与火花放电相关的电流的替代路径,从而防止这种电流损坏读取头。 寄生屏蔽件靠近传统的磁屏蔽设置。 寄生屏蔽的电位基本上等于传感器元件的电位。 如果电容积累在常规屏蔽上,则电流将以比传统屏蔽和传感器元件之间的电流流动所需的电位更低的电流流向寄生屏蔽。 或者,导电火花隙装置电耦合到传感器元件引线和每个磁屏蔽。 每个火花隙装置被带到非常靠近基板的位置,以提供在传感器元件和待排出的基板之间建立的用于充电的替代路径。 靠近基板的火花隙的端部优选地配置有高电场密度诱导结构,其降低在火花隙装置和基板之间引起火花放电所需的电压。
    • 5. 发明授权
    • Having parastic shield for electrostatic discharge protection
    • MR头具有用于静电放电保护的寄生屏蔽
    • US5761009A
    • 1998-06-02
    • US480069
    • 1995-06-07
    • Timothy Scott HughbanksNeil Leslie RobertsonSteven Howard VoldmanAlbert John Wallash
    • Timothy Scott HughbanksNeil Leslie RobertsonSteven Howard VoldmanAlbert John Wallash
    • G11B5/10G11B5/11G11B5/31G11B5/39G11B5/40G11B5/596G11B5/127
    • G11B5/3903G11B5/11G11B5/3912G11B5/40G11B5/59683G11B5/3103Y10T29/49032
    • A magneto-resistive read head having a "parasitic shield" provides an alternative path for currents associated with sparkovers, thus preventing such currents from damaging the read head. The parasitic shield is provided in close proximity to a conventional magnetic shield. The electrical potential of parasitic shield is held essentially equal to the electrical potential of the sensor element. If charges accumulate on the conventional shield, current will flow to the parasitic shield at a lower potential than would be required for current to flow between the conventional shield and the sensor element. Alternatively, conductive spark gap devices are electrically coupled to sensor element leads and to each magnetic shield. Each spark gap device is brought within very close proximity of the substrate to provide an alternative path for charge that builds up between the sensor element and the substrate to be discharged. The ends of the spark gaps that are brought into close proximity of the substrate are preferably configured with high electric field density inducing structures which reduce the voltage required to cause a sparkover between the spark gap device and the substrate.
    • 具有“寄生屏蔽”的磁阻式读取头提供了与火花放电相关的电流的替代路径,从而防止这种电流损坏读取头。 寄生屏蔽件靠近传统的磁屏蔽设置。 寄生屏蔽的电位基本上等于传感器元件的电位。 如果电容积累在常规屏蔽上,则电流将以比传统屏蔽和传感器元件之间的电流流动所需的电位更低的电流流向寄生屏蔽。 或者,导电火花隙装置电耦合到传感器元件引线和每个磁屏蔽。 每个火花隙装置被带到非常靠近基板的位置,以提供在传感器元件和待排出的基板之间建立的用于充电的替代路径。 靠近基板的火花隙的端部优选地配置有高电场密度诱导结构,其降低在火花隙装置和基板之间引起火花放电所需的电压。
    • 6. 发明授权
    • Electrostatic discharge protection system for MR heads
    • MR磁头静电放电保护系统
    • US5644454A
    • 1997-07-01
    • US613928
    • 1996-03-11
    • Satya P. AryaTimothy Scott HughbanksSteven Howard VoldmanAlbert John Wallash
    • Satya P. AryaTimothy Scott HughbanksSteven Howard VoldmanAlbert John Wallash
    • G11B5/40G11B5/48G11B5/60G11B19/02G11B5/33
    • G11B5/4853G11B5/40G11B5/4886G11B19/02G11B5/6011
    • An MR head receives ESD protection from a mechanism that automatically and releasably shorts the MR head whenever a suspension assembly on which the head is mounted is not installed in an HDA. The suspension assembly includes a flexure underlying a load beam, which is connected to an actuator arm. The MR head is mounted to a distal end of the flexure, leads from components of the MR head being brought out in the form of MR wire leads running along the load beam and the support arm to a nearby terminal connecting side tab. The conductors are separated and exposed at a designated point along the flexure to provide a contact region. A shorting bar, which comprises an electrically conductive member attached to the actuator arm, automatically connects the MR wire leads at the contact region when absence of support for the MR head permits the load beam to bend sufficiently toward the shorting bar. Thus, when the assembly is removed from installation in an HDA, the flexure is permitted to move toward the shorting bar, bringing the contact region and the shorting bar in electrical contact to short the MR wired leads and thereby disable the MR sensor. When the assembly is installed in an HDA, the MR head is supported by an air bearing or the disk itself, depending upon whether the disk is rotating or stopped, respectively. In either case, the load beam is not permitted to droop and the shorting bar cannot contact the conductors, thus activating the MR sensor. Temporary ESD protection mechanisms are also provided, these being removable prior to operation of the HDA by breaking and removing various temporary shorting mechanisms.
    • 每当安装有头部的悬挂组件未安装在HDA中时,MR磁头可以从机构自动和可释放地短路MR头部获得ESD保护。 悬架组件包括连接到致动器臂的负载梁下方的挠曲件。 MR头被安装到挠曲件的远端,从MR头的部件引出的MR导线沿着负载梁和支撑臂延伸到附近的端子连接侧突出部的形式被引出。 导体沿着挠曲件在指定点处分离并暴露以提供接触区域。 包括连接到致动器臂的导电构件的短路棒在没有用于MR头的支撑的情况下在接触区域处自动连接MR线引线,允许负载梁朝向短路棒充分弯曲。 因此,当组件从HDA中的安装中移除时,允许挠曲件朝向短路棒移动,使接触区域和短路棒电接触以缩短MR有线引线,从而禁用MR传感器。 当组件安装在HDA中时,MR磁头由空气轴承或磁盘本身支撑,这取决于磁盘是分别旋转还是停止。 在任一情况下,负载梁不允许下垂,并且短路棒不能接触导体,从而启动MR传感器。 还提供了临时ESD保护机制,它们在HDA操作之前可以通过断开和移除各种临时短路机构来拆卸。
    • 7. 发明授权
    • Data storage system with TiC MR-head magnetic shield dummy shield spark gap
    • 数据存储系统采用TiC MR磁头磁屏蔽虚拟屏蔽火花隙
    • US06359750B1
    • 2002-03-19
    • US09434450
    • 1999-11-05
    • Timothy Scott HughbanksNeil Leslie RobertsonSteven Howard VoldmanAlbert John Wallash
    • Timothy Scott HughbanksNeil Leslie RobertsonSteven Howard VoldmanAlbert John Wallash
    • G11B5127
    • G11B5/3903G11B5/11G11B5/3103G11B5/3912G11B5/40G11B5/59683Y10T29/49032
    • A magneto-resistive read head having a “parasitic shield” in a data storage system provides an alternative path for currents associated with sparkovers, thus preventing such currents from damaging the read head. The parasitic shield is provided in close proximity to a conventional magnetic shield. The electrical potential of parasitic shield is held essentially equal to the electrical potential of the sensor element. If charges accumulate on the conventional shield, current will flow to the parasitic shield at a lower potential than would be required for current to flow between the conventional shield and the sensor element. Alternatively, conductive spark gap devices are electrically coupled to sensor element leads and to each magnetic shield. Each spark gap device is brought within very close proximity of the substrate to provide an alternative path for charge that builds up between the sensor element and the substrate to be discharged. The ends of the spark gaps that are brought into close proximity of the substrate are preferably configured with high electric field density inducing structures which reduce the voltage required to cause a sparkover between the spark gap device and the substrate.
    • 在数据存储系统中具有“寄生屏蔽”的磁阻式读取头为与电荷放电相关联的电流提供替代路径,从而防止这种电流损坏读取头。 寄生屏蔽件靠近传统的磁屏蔽设置。 寄生屏蔽的电位基本上等于传感器元件的电位。 如果电容积累在常规屏蔽上,则电流将以比传统屏蔽和传感器元件之间的电流流动所需的电位更低的电流流向寄生屏蔽。 或者,导电火花隙装置电耦合到传感器元件引线和每个磁屏蔽。 每个火花隙装置被带到非常靠近基板的位置,以提供在传感器元件和待排出的基板之间建立的用于充电的替代路径。 靠近基板的火花隙的端部优选地配置有高电场密度诱导结构,其降低在火花隙装置和基板之间引起火花放电所需的电压。