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1. 发明授权

US10494718B2 Deposition reactor with plasma source 有权
公开(公告)号：US10494718B2
公开(公告)日：2019-12-03
申请号：US14110149
申请日：2011-04-07
申请人： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
发明人： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
IPC分类号： C23C16/455 , C23C16/40 , C23C16/458 , C23C16/50 , H01J37/32
CPC分类号： C23C16/45589 , C23C16/403 , C23C16/458 , C23C16/45536 , C23C16/45544 , C23C16/45582 , C23C16/50 , H01J37/32357 , H01J37/32449
摘要： A deposition reactor includes an in-feed part that defines an expansion space which leads reactants as a top to bottom flow from a plasma source towards a reaction chamber, the expansion space widening towards the reaction chamber, and a lifting mechanism for loading at least one substrate to the reaction chamber from the top side of the reaction chamber. The deposition reactor deposits material on the at least one substrate in the reaction chamber by sequential self-saturating surface reactions.

2. 发明申请

US20050241099A1 Central vacuum cleaner and its central unit 有权
标题翻译：中央吸尘器及其中央单元
公开(公告)号：US20050241099A1
公开(公告)日：2005-11-03
申请号：US10525358
申请日：2003-09-01
申请人： Timo Malinen
发明人： Timo Malinen
IPC分类号： A47L5/38
CPC分类号： A47L5/38
摘要： A central vacuum cleaner including a central unit provided with a suction joint and an exhaust joint as well as a suction hose. According to the invention, the central vacuum cleaner includes an operating unit (1) having adaptors for attaching the central unit (2) to the operating unit, an exhaust junction (3) for connecting the exhaust joint of the central unit to the operating unit, a filter (4) for filtering the air flow from the exhaust joint and exhaust junction, as well as an outlet port (5) for directing the air flow that travelled through the filter into the air space surrounding the operating unit.
摘要翻译：中央真空吸尘器，包括设置有抽吸接头和排气接头的中央单元以及抽吸软管。根据本发明，中央真空吸尘器包括具有用于将中央单元（2）附接到操作单元的适配器的操作单元（1），用于将中央单元的排气接头连接到操作单元的排气接头（3），用于过滤来自排气接头和排气接头的空气流的过滤器（4），以及用于将通过过滤器的空气流引导到围绕操作单元的空气空间中的出口（5）。

3. 发明申请

US20140087093A1 DEPOSITION REACTOR WITH PLASMA SOURCE 审中-公开
标题翻译：具有等离子体源的沉积反应器
公开(公告)号：US20140087093A1
公开(公告)日：2014-03-27
申请号：US14110149
申请日：2011-04-07
申请人： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
发明人： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
IPC分类号： C23C16/458 , C23C16/50
CPC分类号： C23C16/458 , C23C16/403 , C23C16/45536 , C23C16/45544 , C23C16/45582 , C23C16/45589 , C23C16/50 , H01J37/32357 , H01J37/32449
摘要： A deposition reactor includes an in-feed part that defines an expansion space which leads reactants as a top to bottom flow from a plasma source towards a reaction chamber, the expansion space widening towards the reaction chamber, and a lifting mechanism for loading at least one substrate to the reaction chamber from the top side of the reaction chamber. The deposition reactor deposits material on the at least one substrate in the reaction chamber by sequential self-saturating surface reactions.
摘要翻译：沉积反应器包括限定膨胀空间的进料部分，该膨胀空间引导反应物从顶部到底部从等离子体源向反应室流动，膨胀空间朝向反应室扩大;以及提升机构，用于装载至少一个从反应室的顶侧到反应室的底物。沉积反应器通过顺序的自饱和表面反应将材料沉积在反应室中的至少一个基底上。

4. 发明申请

US20140024223A1 Atomic Layer Deposition with Plasma Source 有权
标题翻译：原子层沉积与等离子体源
公开(公告)号：US20140024223A1
公开(公告)日：2014-01-23
申请号：US14009647
申请日：2011-04-07
申请人： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
发明人： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
IPC分类号： B05C5/00 , H01L21/02
CPC分类号： B05C5/001 , C23C16/403 , C23C16/45542 , C23C16/45544 , C23C16/45582 , C23C16/52 , H01J37/32357 , H01J37/32449 , H01J37/32743 , H01J37/32871 , H01L21/02274
摘要： The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
摘要翻译：本发明涉及包括操作等离子体原子层沉积反应器的方法，该等离子体原子层沉积反应器被配置为通过顺序的自饱和表面反应在至少一个衬底上的反应室中沉积材料，并且允许来自惰性气体源的气体流入扩展的自由基，基本上在整个沉积循环期间向反应室开口的进料部分开口。本发明还涉及相应的装置。

5. 发明授权

US07464436B2 Central vacuum cleaner and its central unit 有权
标题翻译：中央吸尘器及其中央单元
公开(公告)号：US07464436B2
公开(公告)日：2008-12-16
申请号：US10525358
申请日：2003-09-01
申请人： Timo Malinen
发明人： Timo Malinen
IPC分类号： A47L5/38
CPC分类号： A47L5/38
摘要： A central vacuum cleaner including a central unit provided with a suction joint and an exhaust joint as well as a suction hose. According to the invention, the central vacuum cleaner includes an operating unit (1) having adaptors for attaching the central unit (2) to the operating unit, an exhaust junction (3) for connecting the exhaust joint of the central unit to the operating unit, a filter (4) for filtering the air flow from the exhaust joint and exhaust junction, as well as an outlet port (5) for directing the air flow that travelled through the filter into the air space surrounding the operating unit.
摘要翻译：中央真空吸尘器，包括设置有抽吸接头和排气接头的中央单元以及抽吸软管。根据本发明，中央真空吸尘器包括具有用于将中央单元（2）附接到操作单元的适配器的操作单元（1），用于将中央单元的排气接头连接到操作单元的排气接头（3），用于过滤来自排气接头和排气接头的空气流的过滤器（4），以及用于将通过过滤器的空气流引导到围绕操作单元的空气空间中的出口（5）。

6. 发明授权

US09095869B2 Atomic layer deposition with plasma source 有权
标题翻译：原子层沉积与等离子体源
公开(公告)号：US09095869B2
公开(公告)日：2015-08-04
申请号：US14009647
申请日：2011-04-07
申请人： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
发明人： Vaino Kilpi , Wei-Min Li , Timo Malinen , Juhana Kostamo , Sven Lindfors
IPC分类号： H01L21/31 , B05C5/00 , C23C16/40 , C23C16/455 , H01L21/02 , H01J37/32
CPC分类号： B05C5/001 , C23C16/403 , C23C16/45542 , C23C16/45544 , C23C16/45582 , C23C16/52 , H01J37/32357 , H01J37/32449 , H01J37/32743 , H01J37/32871 , H01L21/02274
摘要： The invention relates to method including operating a plasma atomic layer deposition reactor configured to deposit material in a reaction chamber on at least one substrate by sequential self-saturating surface reactions, and allowing gas from an inactive gas source to flow into a widening radical in-feed part opening towards the reaction chamber substantially during a whole deposition cycle. The invention also relates to a corresponding apparatus.
摘要翻译：本发明涉及包括操作等离子体原子层沉积反应器的方法，该等离子体原子层沉积反应器被配置为通过顺序的自饱和表面反应在至少一个衬底上的反应室中沉积材料，并且允许来自惰性气体源的气体流入扩展的自由基，基本上在整个沉积循环期间向反应室开口的进料部分开口。本发明还涉及相应的装置。

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